Abstract: A dispersion-compensation microstructure fiber uses pure silica glass as the background material. It includes the core, the first-type defects, the second-type defects and the cladding. The air holes in the fiber cross section are arranged in the equilateral triangle lattice with the same adjacent air-hole to air-hole spacing. The core is formed by omitting 1 air hole. The first-type defects are formed by the 6 air holes locating at the vertices of hexagonal third-layer porous structure surrounding the core and their surrounding background material. The second-type defects are formed by the air holes in the first air-hole layer surrounding each first-type defect and their surrounding background material. The second-type defects act as the porous structure to surround the first-type defects and the fundamental defect modes, and can also combine with the first-type defects to act as the core of the second-order defect modes.

Abstract: A semiconductor device and a manufacturing method thereof are provided. The semiconductor device includes a semiconductor substrate, active devices and transparent conductive patterns. The active devices are formed on the semiconductor substrate. The transparent conductive patterns are formed over the active devices and electrically connected to the active devices. The transparent conductive patterns are made of a metal oxide material. The metal oxide material has a first crystalline phase with a prefer growth plane rich in oxygen vacancy, and has a second crystalline phase with a prefer growth plane poor in oxygen vacancy.

Abstract: The present disclosure provides an audio compression device, an audio compressing system and an audio compression method. The audio compression device comprises a first transceiver and a first processor. The first transceiver is connected to the first processor. The processor obtains an audio signal and an available bandwidth, and the processor performs an audio compression encoding on the audio signal to obtain a sample audio signal, and then compares with the audio signal and the sample audio signal to generate a residual signal, and the residual signal is transmitted according to the available bandwidth. The audio signal can be completely transmitted to an audio decompression device to reduce the distortion of the audio signal.

Abstract: A radiation source apparatus includes a vessel, a laser source, a collector, a horizontal obscuration bar, and a reflective mirror. The vessel has an exit aperture. The laser source is configured to emit a laser beam to excite a target material to form a plasma. The collector is disposed in the vessel and configured to collect a radiation emitted by the plasma and to reflect the collected radiation to the exit aperture of the vessel. The horizontal obscuration bar extends from a sidewall of the vessel at least to a position between the laser source and the exit aperture of the vessel. The reflective mirror is in the vessel and connected to the horizontal obscuration bar.

Abstract: A transition metal layered oxide is a P2 type transition metal layered oxide which is represented by following formula (1). Na0.67-2xM1xMgaCubMn1-a-bO2??(1) In the formula (1), M1 is selected from a group consisting of calcium (Ca), potassium (K), magnesium (Mg), and lithium (Li), 0.01?a+b?0.5, 0.01?a?0.5, 0.01?b?0.5, and 0?x?0.2. A positive electrode material of a sodium-ion battery includes the above transition metal layered oxide.

Abstract: A semiconductor device is provided. The semiconductor device includes a substrate having a surface. The semiconductor device includes a conductive pad over a portion of the surface. The conductive pad has a curved top surface, and a width of the conductive pad increases toward the substrate. The semiconductor device includes a device over the conductive pad. The semiconductor device includes a solder layer between the device and the conductive pad. The solder layer covers the curved top surface of the conductive pad, and the conductive pad extends into the solder layer.

Abstract: A micro electro mechanical system (MEMS) includes a circuit substrate comprising electronic circuitry, a support substrate having a recess, a bonding layer disposed between the circuit substrate and the support substrate, through holes passing through the circuit substrate to the recess, a first conductive layer disposed on a front side of the circuit substrate, and a second conductive layer disposed on an inner wall of the recess. The first conductive layer extends into the through holes and the second conductive layer extends into the through holes and coupled to the first conductive layer.

Abstract: An optical coherence tomography scanning system traverses its respective scan pattern quickly, typically completing an entire two-dimensional frame faster than a conventional raster scanner completes one raster line segment. To traverse the scan pattern quickly, the system takes fewer A-scans per length of scan pattern than a conventional OCT scanner. To compensate for the sparsity of the sample points along the respective scan line segments, and for gaps between respective line segments of the trajectory, the system acquires and combines several partially overlapping frames for each study.

Abstract: A display panel includes: multiple light-emitting devices arranged on a substrate, each light-emitting device includes a first electrode, multiple light-emitting units and a second electrode sequentially arranged in a direction away from the substrate, a microcavity structure is formed between the first electrode and the second electrode, the light-emitting unit includes a light-emitting layer, light-emission colors of at least two light-emitting layers in the same light-emitting device are different, and at least one light-emitting device includes a cavity length adjusting layer; and a color conversion layer including multiple wavelength conversion units, each wavelength conversion unit corresponds to a light-emitting device having the cavity length adjusting layer, the wavelength conversion unit is arranged on a light outlet side of the light-emitting device, at least one light-emission peak in a light-emission band of the light-emitting device is less than or equal to an intrinsic light-emission peak of a

Abstract: A semiconductor device includes a die, an encapsulant over a front-side surface of the die, a redistribution structure on the encapsulant, a thermal module coupled to the back-side surface of the die, and a bolt extending through the redistribution structure and the thermal module. The die includes a chamfered corner. The bolt is adjacent to the chamfered corner.

Abstract: A bottle, having an antimicrobial property is provided. The bottle has one or more components including a body, a cap, a seal, and a locking ring. One or more of the components of the bottle are treated with an antimicrobial agent or comprise an antimicrobial agent. The antimicrobial is a silver based antimicrobial, a silver-glass antimicrobial, or other antimicrobial agent.

Abstract: A display driving integrated circuit (IC) and a driving parameter adjustment method thereof are provided. The display driving IC includes a control circuit and a driving parameter determination circuit. The control circuit controls a current driving circuit and a scanning circuit according to a driving parameter, wherein the current driving circuit is suitable for driving multiple driving lines of a light emitting diode (LED) array, and the scanning circuit is suitable for driving multiple scanning lines of the LED array. The driving parameter determination circuit is coupled to the control circuit to provide the driving parameter. The driving parameter determination circuit dynamically adjusts the driving parameter for a target LED in the LED array according to a grayscale value of the target LED.

Abstract: A package comprising an integrated device and a substrate coupled to the integrated device. The substrate comprises at least one dielectric layer and a plurality of interconnects. The plurality of interconnects include a plurality of post interconnects. The plurality of post interconnects include a post interconnect comprising a profile cross section that includes a trapezoid shape.

Abstract: A supported metallocene catalyst includes a carrier and a metallocene component. The carrier includes an inorganic oxide particle and an alkyl aluminoxane material. The inorganic oxide particle includes at least one inorganic oxide compound selected from the group consisting of an oxide of Group 3A and an oxide of Group 4A. The alkyl aluminoxane material includes an alkyl aluminoxane compound and an alkyl aluminum compound that is present in amount ranging from greater than 0.01 wt % to less than 14 wt % base on 100 wt % of the alkyl aluminoxane material. The metallocene component is supported on the carrier, and includes one of a metallocene compound containing a metal from Group 3B, a metallocene compound containing a metal from Group 4B, and a combination thereof. A method for preparing the supported metallocene catalyst and a method for preparing polyolefin using the supported metallocene catalyst are also disclosed.

Abstract: A method and system for calculating emotional indicators based on pupil-wave are provided. The operation of calculating emotional indicators based on a pupil-wave may include the following operations. A pupil-wave is collected when a subject is in a calm state and set as a standard pupil-wave; Obtaining emotional indicators and corresponding emotions used to measure a mental state. The pupil-wave of the subject in each emotional state is collected and set as an emotional pupil-wave; According to the standard pupil-wave, a bandwidth and differential pupil-wave corresponding to each emotion are calculated; The standard, emotional, bandwidth and differential pupil-wave are input into a pre-trained deep convolutional neural network to obtain index values of emotional indicators.

Abstract: A method for evaluating radio performance of a device under test (DUT) comprises the following steps. A first set of points, a second set of points and a third set of points are defined to locate on a sphere surrounding the DUT. A signal power of the DUT is evaluated at the first set of points to identify a first region related to the first set of points. Candidates of the second set of points are selected based on the first region. The signal power of the DUT is evaluated at the candidates of the second set of points to identify a second region related to the second set of points. Candidates of the third set of points are selected based on the second region. The signal power of the DUT is evaluated at the candidates of the third set of points to identify a beam peak.

Abstract: The present invention relates to a coating composition including polysilazane mixed in a suitable solvent, and nanoparticles dispersed therein, a method of forming the coating composition, a method of forming the coating and a coating.

Abstract: A method includes receiving a silicon substrate; forming a first doped region and a second doped region in the silicon substrate; forming a third doped region and fourth doped region on upper portions of the first doped region and the second doped region, respectively; and patterning the silicon substrate to form an optical modulator. The optical modulator includes: a first section; a second section and a third section at least formed from the first and second doped regions, respectively; a fourth section, including a first height less than that of the first section and the second section and arranged between the first section and the second section, the fourth section being an undoped region; and a fifth section immediately adjacent to the fourth section, the fifth section including a height less than that of the first section and the second section and different from the first height.

Abstract: An optical waveguide structure of a semiconductor photonic device includes a first semiconductor waveguide, a second semiconductor waveguide, and an air seam between the first and second semiconductor waveguides. The semiconductor waveguides extend in a first direction, and a plurality of air seams extend in a second direction. Each of the air seams is disposed between two adjacent semiconductor waveguides. A distance between the two adjacent semiconductor waveguides is less than a width of each semiconductor waveguide.

Abstract: A semiconductor structure includes a substrate, a grating coupler structure over the substrate, a multi-layers film structure over the grating coupler structure. The multi-layers film structure include a first layer including a first refractive index, a second layer over the first layer and including a second refractive index and a third layer over the second layer and including a third refractive index. The second refractive index is greater than the first refractive index and is greater than the third refractive index of the third layer, and a thickness of each layer of the multi-layers film structure is within a range from ?/4 to ?2, ? is a wavelength of light.