Abstract: A structure and a formation method of a semiconductor device are provided. The method includes forming an etch stop layer over a semiconductor substrate and forming a magnetic element over the etch stop layer. The method also includes forming an isolation element extending across the magnetic element. The isolation element partially covers the top surface of the magnetic element and partially covers sidewall surfaces of the magnetic element. The method further includes forming a conductive line over the isolation element. In addition, the method includes forming a dielectric layer over the conductive line, the isolation element, and the magnetic element.

Abstract: Semiconductor devices and methods of forming the same are provided. One of the semiconductor devices comprises a conductive layer, a first dielectric layer disposed over the conductive layer, a magnetic layer disposed over the first dielectric layer, and a plurality of tantalum layers and a plurality of tantalum oxide layers alternately disposed between the magnetic layer and the first dielectric layer.

Abstract: A method for forming a semiconductor device structure is provided. The method includes forming a first conductive line over a substrate. The method includes forming a first protection cap over a first portion of the first conductive line. The first protection cap and the first conductive line are made of different conductive materials. The method includes forming a first photosensitive dielectric layer over the substrate, the first conductive line, and the first protection cap. The method includes forming a first opening in the first photosensitive dielectric layer and over the first protection cap. The method includes forming a conductive via structure and a second conductive line over the first conductive line. The conductive via structure is in the first opening and over the first protection cap, and the second conductive line is over the conductive via structure and the first photosensitive dielectric layer.

Abstract: A semiconductor device structure is provided. The semiconductor device structure includes a substrate, and the substrate includes a first region and a second region. The semiconductor device structure includes a first conductive structure formed over the first region of the substrate and a bottom magnetic layer formed over the second region of the substrate. The semiconductor device structure also includes a second conductive structure formed over the bottom magnetic layer and a first insulating layer formed over a sidewall surface of the first conductive structure. The semiconductor device structure further includes a second insulating layer formed over the first insulating layer, and the second insulating layer has a stair-shaped structure.

Abstract: A method of manufacturing a semiconductor device and the semiconductor device are provided in which a plurality of layers with cobalt-zirconium-tantalum are formed over a semiconductor substrate, the plurality of layers are patterned, and multiple dielectric layers and conductive materials are deposited over the CZT material. Another layer of CZT material encapsulates the conductive material.

Abstract: A method of manufacturing a semiconductor device and the semiconductor device are provided in which a plurality of layers with cobalt-zirconium-tantalum are formed over a semiconductor substrate, the plurality of layers are patterned, and multiple dielectric layers and conductive materials are deposited over the CZT material. Another layer of CZT material encapsulates the conductive material.

Abstract: Semiconductor devices and methods of forming the same are provided. One of the semiconductor devices comprises a conductive layer, a first dielectric layer disposed over the conductive layer, a magnetic layer disposed over the first dielectric layer, and a plurality of tantalum layers and a plurality of tantalum oxide layers alternately disposed between the magnetic layer and the first dielectric layer.

Abstract: A method of manufacturing a semiconductor device and the semiconductor device are provided in which a plurality of layers with cobalt-zirconium-tantalum are formed over a semiconductor substrate, the plurality of layers are patterned, and multiple dielectric layers and conductive materials are deposited over the CZT material. Another layer of CZT material encapsulates the conductive material.

Abstract: Semiconductor devices and methods of forming the same are disclosed. One of the semiconductor devices includes a conductive layer, a first dielectric layer, a magnetic layer and an etch stop stack. The first dielectric layer is disposed over the conductive layer. The magnetic layer is disposed over the first dielectric layer. The etch stop stack is disposed between the magnetic layer and the first dielectric layer. The etch stop stack includes a second dielectric layer and a plurality of unit layers between the second dielectric layer and the magnetic layer, and each of the plurality of unit layers comprises a tantalum layer and a tantalum oxide layer on the tantalum layer.

Abstract: Semiconductor devices and methods of forming the same are disclosed. One of the semiconductor devices includes a conductive layer, a first dielectric layer, a magnetic layer and an etch stop stack. The first dielectric layer is disposed over the conductive layer. The magnetic layer is disposed over the first dielectric layer. The etch stop stack is disposed between the magnetic layer and the first dielectric layer. The etch stop stack includes a second dielectric layer and a plurality of unit layers between the second dielectric layer and the magnetic layer, and each of the plurality of unit layers comprises a tantalum layer and a tantalum oxide layer on the tantalum layer.

Abstract: A method of fabricating a semiconductor structure includes: forming a conductive layer on a first insulating layer; etching a portion of the conductive layer to expose a portion of the first insulating layer; deforming a surface of the portion of the first insulating layer to form a rough surface of the first insulating layer; and removing a residue of the conductive layer on the rough surface of the first insulating layer.

Abstract: A method of manufacturing a semiconductor device and the semiconductor device are provided in which a plurality of layers with cobalt-zirconium-tantalum are formed over a semiconductor substrate, the plurality of layers are patterned, and multiple dielectric layers and conductive materials are deposited over the CZT material. Another layer of CZT material encapsulates the conductive material.

Abstract: A method of manufacturing a semiconductor device and the semiconductor device are provided in which a plurality of layers with cobalt-zirconium-tantalum are formed over a semiconductor substrate, the plurality of layers are patterned, and multiple dielectric layers and conductive materials are deposited over the CZT material. Another layer of CZT material encapsulates the conductive material.

Abstract: A method of fabricating a semiconductor structure includes: forming a conductive layer on a first insulating layer; etching a portion of the conductive layer to expose a portion of the first insulating layer; deforming a surface of the portion of the first insulating layer to form a rough surface of the first insulating layer; and removing a residue of the conductive layer on the rough surface of the first insulating layer.

Abstract: A vehicle entertainment system comprising media player, master unit, slave units and smart devices to control the operation of master unit and slave units. A media placed in the media player can be played and shared between master and slave units. The media can be stored in a storage device to be played at a later time. The media content is shared between master and slave units via cable or wireless communication.

Abstract: A structure of a fuel cell stack is disclosed, comprising: a first cathode plate, a first fuel cell module, a first anode channel plate, a second fuel cell module, a cathode channel plate, a third fuel cell module, a second anode channel plate, a fourth fuel cell module, and a second cathode plate stacked from top to bottom. The fuel cell stack of the invention can be assembled easily.

Abstract: A fuel cell device with a compound power supply is disclosed, which comprises a bipolar fuel cell board and an auxiliary power supply. The bipolar fuel cell board includes at least one fuel cell unit. The auxiliary power supply is disposed on the bipolar fuel cell board and/or on an intermediate substrate sandwiched within the fuel cell device, and is connected to the fuel cell units. Stable power is output due to the combination of power from the fuel cell units and the auxiliary power supply.

Abstract: The present invention discloses a fuel cell structure, which comprises a membrane electrode assembly pallet, a cathode channel pallet and an anode channel pallet. These membrane electrode assemblies are sandwiched and configured between the upper frame pallet and the lower frame pallet, and the material for the two frame pallets are made of the material melted with the supersonic vibration frequency welding means. The cathode channel pallet is a pallet-body structure and bonded with the upper frame pallet of the membrane electrode assembly pallet. The anode channel pallet is a pallet-body structure and bonded with the lower frame pallet of the membrane electrode assembly pallet. The material for the two channel pallets are made of the material melted with the supersonic vibration frequency welding means. The cathode channel pallet, the membrane electrode assembly pallet, and the anode channel pallet are welded and bonded as a single piece structure by the super sonic vibration frequency welding means.

Abstract: A liquid fuel mixer is disclosed, which is used to store liquid fuels for a fuel cell. The liquid fuel mixer includes a casing, one or more radiators and a gas permeable but liquid impermeable film. The casing forms a first internal compartment and a second internal compartment, and the first internal compartment is adjacent to the second internal compartment. The casing next to and separating the first internal compartment from the second internal compartment includes at least one vent and at least one drain. The second internal compartment contains the liquid fuels. The radiators are disposed in the first internal compartment. The gas permeable but liquid impermeable film is disposed on the vent. To avoid water condensing on the walls, the bottom of the first internal compartment includes a slopping channel and/or a flow-guilding channel, and the drain is disposed on the end of the lower portion of the slopping channel or the flow-guilding channel.