Abstract: A semiconductor device and methods of fabricating the same are disclosed. The semiconductor device includes a substrate, a fin structure with a fin top surface disposed on the substrate, a source/drain (S/D) region disposed on the fin structure, a gate structure disposed on the fin top surface, and a gate spacer with first and second spacer portions disposed between the gate structure and the S/D region. The first spacer portion extends above the fin top surface and is disposed along a sidewall of the gate structure. The second spacer portion extends below the fin top surface and is disposed along a sidewall of the S/D region.

Abstract: In a method of manufacturing a semiconductor device, an underlying structure is formed over a substrate. A film is formed over the underlying structure. Surface topography of the film is measured and the surface topography is stored as topography data. A local etching is performed by using directional etching and scanning the substrate so that an entire surface of the film is subjected to the directional etching. A plasma beam intensity of the directional etching is adjusted according to the topography data.

Abstract: Tin oxide films are used as spacers and hardmasks in semiconductor device manufacturing. In one method, tin oxide layer (e.g., spacer footing) needs to be selectively etched in a presence of an exposed silicon-containing layer, such as SiOC, SiON, SiONC, amorphous silicon, SiC, or SiN. In order to reduce damage to the silicon-containing layer the process involves passivating the silicon-containing layer towards a tin oxide etch chemistry, etching the tin oxide, and repeating passivation and etch in an alternating fashion. For example, passivation and etch can be each performed between 2-50 times. In one implementation, passivation is performed by treating the substrate with an oxygen-containing reactant, activated in a plasma, and the tin oxide etching is performed by a chlorine-based chemistry, such as using a mixture of Cl2 and BCl3.

Abstract: A humidifier comprises a water reservoir and a reservoir dock configured to receive the water reservoir in an operative position. The water reservoir is configured to hold a volume of liquid. The water reservoir includes a chamber and a single conduit providing an inner opening arranged within the chamber. The reservoir dock includes a dock inlet conduit arranged to receive the flow of air from the RPT device. The dock inlet conduit is structured and arranged to extend within the single conduit of the water reservoir when the water reservoir reaches the operative position such that the dock inlet conduit and the single conduit at least partially overlap one another.

Abstract: A method is described herein of making a textured glass article, the method includes: etching an initial primary surface of a glass substrate having a thickness with a hydrofluoric acid-free etchant having a pH of about 3 or less; and removing the etchant from the glass substrate, such that the etching is conducted from above ambient temperature to about 100° C. to form a textured region that is defined by a primary surface of the substrate and comprises a sparkle of 2% or less, and the etching comprises a plurality of batch cycles.

Abstract: A chip package structure is provided. The chip package structure includes a photonic integrated circuit chip including a dielectric structure, a photodetector, an optical modulator, and a first waveguide structure in the dielectric structure. The photodetector and the optical modulator are connected to the first waveguide structure. The chip package structure includes an electronic integrated circuit chip over the photonic integrated circuit chip. The chip package structure includes an optical transmission chip over the photonic integrated circuit chip. The optical transmission chip includes a substrate, a second waveguide structure, and a first reflective structure.

Abstract: The disclosure provides an electronic device including a substrate, a first vibrating unit, and a supporting unit. The substrate has a first surface. The first vibrating unit is disposed on the first surface and has a second surface. The second surface faces the first surface. The supporting unit is disposed between the substrate and the first vibrating unit. The first surface and the second surface are separated by a distance through the supporting unit. This distance ranges from equal to or greater than 0.06 mm to equal to or less than 65.4 mm.

Abstract: The present disclosure relates to semiconductor structures and, more particularly, to silicon controlled rectifiers and methods of manufacture. The structure includes: a plurality of wells of a first conductivity type; a well of a second conductivity type which is different than the first conductivity type; an intrinsic semiconductor region between the well and the plurality of wells; and contacts within the plurality of wells.

Abstract: A polymer composite for preparing a low dielectric resin composition having a dielectric loss tangent (Df) that is less than or equal to 0.00200 is provided. The polymer composite includes a first styrene-based copolymer having a weight average molecular weight that is lower than 20,000 g/mol and a second styrene-based copolymer having a weight average molecular weight that is higher than 20,000 g/mol, wherein the weight ratio of the first styrene-based copolymer to the second styrene-based copolymer is from 5/95 to 95/5.

Abstract: A fuel cell system capable of improving the utilization of a mixed fuel includes a fuel cell, having an anode input terminal, a cathode input terminal, an anode output terminal and a cathode output terminal; a selective separator, having an input end, a hydrogen output end, and an unused gas output end; a hydrogen pump; a purge valve; and a steam trap. The fuel cell system can improve the separation efficiency of a hydrogen gas and reduce the hydrogen concentration of an exhaust gas to less than 4 vol %.

Abstract: In a method of forming a groove pattern extending in a first axis in an underlying layer over a semiconductor substrate, a first opening is formed in the underlying layer, and the first opening is extended in the first axis by directional etching to form the groove pattern.

Abstract: A manufacturing method of a transformer includes: winding a first winding wire around a bobbin, wherein two ends of the first winding wire are connected to a first and a second pin of the bobbin respectively; winding a second winding wire around the bobbin, wherein two ends of the second winding wire are connected to a third and a fourth pin of the bobbin respectively; and winding a third and a fourth winding wire in parallel around the bobbin, wherein two ends of the third winding wire are connected to the second and a fifth pin of the bobbin respectively, and two ends of the fourth winding wire are connected to the fifth and a sixth pin respectively. The first, the third and the fourth winding wires form a primary coil, and the second winding wire is a secondary coil.

Abstract: An interfacial layer is provided that binds a hydrophilic interlayer dielectric to a hydrophobic gap-filling dielectric. The hydrophobic gap-filling dielectric extends over and fill gaps between devices in an array of devices disposed between two metal interconnect layers over a semiconductor substrate and is the product of a flowable CVD process. The interfacial layer provides a hydrophilic upper surface to which the interlayer dielectric adheres. Optionally, the interfacial layer is also the product of a flowable CVD process. Alternatively, the interfacial layer may be silicon nitride or another dielectric that is hydrophilic. The interfacial layer may have a wafer contact angle (WCA) intermediate between a WCA of the hydrophobic dielectric and a WCA of the interlayer dielectric.

Abstract: A hydrocarbon resin polymer including a repeating unit (A) is derived from dicyclopentadiene (DCPD). The hydrocarbon resin polymer has a fluorine substituent, and the content of the fluorine substituent is 100 to 4500 ppm based on the total weight of the hydrocarbon resin polymer. A manufacturing method of the above hydrocarbon resin polymer. The manufacturing method includes polymerizing a mixture in the presence of a fluorine-containing compound, wherein the fluorine-containing compound is a boron trifluoride complex and the mixture includes a dicyclopentadiene. A substrate structure includes a resin layer, and a conductive layer disposed on the resin layer. The resin layer is formed from a resin composition including the above hydrocarbon resin polymer using a cross-linking process.

Abstract: The present invention disclose a frequency-modulated external cavity laser device including a seed light source, a feedback loop external cavity, a light source frequency adjustment module, an FP cavity frequency adjustment module and an external cavity frequency adjustment module. The feedback loop external cavity includes an FP cavity; the light source frequency adjustment module is configured for adjusting an eigenfrequency of the seed light beam; the FP cavity frequency adjustment module is configured for adjusting a resonance frequency of the FP cavity; the external cavity frequency adjustment module is configured for adjusting a resonance frequency of the feedback loop external cavity; and the light source frequency adjustment module, the FP cavity frequency adjustment module and the external cavity frequency adjustment module perform cooperative modulation.

Abstract: A power tool includes a working portion with a motor housing enclosing a motor, a handle portion including a handle housing, a connecting member having a first end coupled to the handle housing and a second end coupled to the motor housing, and a vibration damping structure configured to reduce transmission of vibration from the motor housing to the handle housing.

Abstract: An electrostatic discharge (ESD) protection circuit includes a silicon controlled rectifier. The silicon controlled rectifier includes a first well of a first conductivity type in a substrate, and a first doped region of a second conductivity type and a first tap region of the first conductivity type in the first well. The second conductivity type has an opposite polarity to the first conductivity type. The first doped region is coupled to a first pad. The first tap region is coupled to a second pad through a resistor external to the silicon controlled rectifier.

Abstract: A memory circuit includes a memory array, and a peripheral circuit. The peripheral circuit includes an internal clock generating circuit, and a first access signal generating circuit. The internal clock generating circuit is configured to, in response to a control signal pulse, generate a series of internal clock pulses at an internal clock period corresponding to a pulse width of the control signal pulse. The first access signal generating circuit is configured to, in response to a first edge of the control signal pulse, generate a first access signal. The peripheral circuit is configured to control an access operation in the memory array, based on at least one internal clock pulse in the series of internal clock pulses, and the first access signal.

Abstract: A method includes loading a wafer over a wafer chuck in a process chamber; performing a deposition process on the loaded wafer; supplying a fluid medium to a fluid guiding structure in the wafer chuck from a fluid inlet port on the wafer chuck, the fluid guiding structure comprising a plurality of arc-shaped channels fluidly communicated with each other; guiding the fluid medium from a first one of the arc-shaped channels of the fluid guiding structure to a second one of the arc-shaped channels of the fluid guiding structure. The second one of the arc-shaped channels of the fluid guiding structure is concentric with the first one of the arc-shaped channels of the fluid guiding structure from a top view.

Abstract: An example electronic system utilizing an optical ranging, proximity, and/or image sensor configured with retroreflective mechanisms to reduce unwanted optical noise at an optical radiation receiver are provided. The example ranging, proximity, and/or image sensor is configured to include a housing cap having a transmission opening and a receiving opening. The example sensor may further include an optical radiation source positioned to direct ranging optical radiation through the transmission opening toward a target object. An optical radiation receiver is positioned to receive ranging optical radiation reflected off the target object through the receiving opening. A retroreflective mechanism implemented on a surface of the housing cap directs unwanted optical noise back towards an unwanted optical noise source and away from the optical radiation receiver. Properties of the target object may be determined based on one or more properties of the ranging optical radiation received at optical radiation receiver.