Abstract: A fiber-optic to USB Ethernet converter includes fiber-optic jacks for connecting to optical cables; a USB connecting end for plugging into a USB connector on a computer device; a USB-Ethernet converting module for converting USB serial electric signal format into Ethernet electric signal format and Ethernet electric signal format into USB serial electric signal format; an optical-electric signal converting circuit for converting the Ethernet electric signal format received from the USB-Ethernet converting module into an optical signal for sending out via one optical cable, and converting an optical signal received from one optical cable into the Ethernet electric signal format for sending back to the USB-Ethernet converting module; and a power supply detecting and converting module connected to first and fourth pins in the USB connecting end to acquire and convert +5V DC into 5V or 3.3V for use by the optical-electric signal converting circuit and the USB-Ethernet converting module.

Abstract: A network system comprises a discovery subsystem that identifies, enables for consumption, and consumes information. The discovery subsystem isolates business contents and device-specific logic using modular domain-specific contents and data definitions for normalizing the domain-specific contents and describing attributes and value types that uniquely define domain content independently of a device.

Abstract: An automated method for ascertaining interconnectivity in a network comprises operating a customer edge device at a site that is physically linked with at least one provider edge router and communicates directly with peer sites via a virtual private network (VPN) connection. Inter-site connectivity is discovered among a plurality of customer edge devices in the network and effective communication paths among the plurality of customer edge devices across geographically distributed sites are presented.

Abstract: A method and apparatus provide for data compression with deflate block overhead reduction through the use of “pseudo-dynamic” Huffman codes to enable single deflate block encoding in a deflate algorithm implementation. Further, provided is data compression with deflate block overhead reduction through the use of “pseudo-dynamic” Huffman codes to enable single deflate block encoding in a deflate algorithm implementation, with inflation detection and mitigation capabilities.

Abstract: First of all, a semiconductor substrate is provided. Then a gate oxide layer having an uniform thickness is formed on the semiconductor substrate by way of using thermal oxidation. Subsequently, a doping layer is formed on the gate oxide layer by a plasma doped process. Next, forming a poly-layer on the doping layer of the gate oxide layer, wherein the poly-layer has an ions-distribution. Afterward, defining the poly-layer to form a poly-gate. The P-type ions are then implanted into the poly-gate and the substrate by way of using a self-aligned process. Finally, performing a thermal annealing process to form a uniform ion-implanting region and a poly-gate having a lower contact-resistance.

Abstract: A duplex light transceiver module comprises a body having a light receiving module, a light transmitting module, and an optical fiber adaptor. The light emitting module has a laser diode chip and a metal header bearing the laser diode chip. A metal cap of the duplex transceiver module is combined with a round cylindrical focusing element which is installed ahead a light emitting end of the laser diode chip. One end of the cylindrical focusing element is formed with a ramp. A wavelength-division medium is evaporation-coated upon the ramp of the wavelength-division medium. The wavelength-division medium has different permeability so that light at one side facing the optical fiber adaptor will reflect light totally and light at one side facing the optical transmitting module will pass through the wavelength-division medium to be received by the light receiving module.

Abstract: A method for fabricating a silicon oxide/silicon nitride/silicon oxide stacked layer structure is described. A bottom oxide layer is formed over a substrate. A surface treatment is then performed on the first silicon oxide layer to form an interface layer over the bottom oxide layer. The surface treatment is conducted in a nitrogen ambient. Thereafter, a silicon nitride layer is formed over the interface layer, followed by forming an upper silicon oxide layer over the silicon nitride layer.

Abstract: A duplex focusing device is installed a duplex light transceiver module for transmitting light signals. The duplex focusing device comprises a ball lens assembly and a body. The ball lens assembly has a first lens and a second lens both being symmetrical half ball matching to each other. A layer of wavelength-division medium is placed between the first and second lens to ensure that light transmitted from a laser diode will transmit through the ball lens assembly. Thereby, the light transmitting into the ball lens assembly will have a part being reflected by the second lens. The body serves for receiving and fixing the ball lens. The body is formed to cause that both orientations of the first lens and the second lens are adjustable with respect to the body.

Abstract: This invention relates to a method for making the gate dielectric layer, more particularly, to the method for making the interface between the gate dielectric layer and silicon substrate by using oxygen radicals and hydroxyl radicals. In the method, we send the wafers, which has passed through the cleaning process for the silicon substrate, to the chamber at first and then transmit the first reaction gas, which comprises the nitric monoxide and the oxygen or comprises the nitric monoxide and nitrogen, to the chamber to form a silicon nitride layer or a silicon oxynitride layer on the first surface of the silicon substrate to be a gate. Next, we transmit the second reaction gas, which comprises the oxygen and the hydrogen, to the chamber and make the second reaction gas to be dissociated into the oxygen radicals and the hydroxyl radicals.

Abstract: A duplex focusing device is installed a duplex light transceiver module for transmitting light signals. The duplex focusing device comprises a ball lens assembly and a body. The ball lens assembly has a first lens and a second lens both being symmetrical half ball matching to each other. A layer of wavelength-division medium is placed between the first and second lens to ensure that light transmitted from a laser diode will transmit through the ball lens assembly. Thereby, the light transmitting into the ball lens assembly will have a part being reflected by the second lens. The body serves for receiving and fixing the ball lens. The body is formed to cause that both orientations of the first lens and the second lens are adjustable with respect to the body.

Abstract: A duplex light transceiver module comprises a body having a light receiving module, a light transmitting module, and an optical fiber adaptor. The light emitting module has a laser diode chip and a metal header bearing the laser diode chip. A metal cap of the duplex transceiver module is combined with a round cylindrical focusing element which is installed ahead a light emitting end of the laser diode chip. One end of the cylindrical focusing element is formed with a ramp. A wavelength-division medium is evaporation-coated upon the ramp of the wavelength-division medium. The wavelength-division medium has different permeability so that light at one side facing the optical fiber adaptor will reflect light totally and light at one side facing the optical transmitting module will pass through the wavelength-division medium to be received by the light receiving module.

Abstract: A fan unit includes a fan casing and a plurality of blades extending radially and outwardly from the fan casing. Each of the blades includes a hollow blade body that is made from a thermoplastic elastomer, that is manufactured by a blow molding process, and that is exposed outwardly from the fan casing, and a coupler element that is fixed to the blade body and that is clamped between front and rear casing halves of the fan casing.

Abstract: First of all, a semiconductor substrate is provided. Then a gate oxide layer having an uniform thickness is formed on the semiconductor substrate by way of using thermal oxidation. Subsequently, a doping layer is formed on the gate oxide layer by a plasma doped process. Next, forming a poly-layer on the doping layer of the gate oxide layer, wherein the poly-layer has an ions-distribution. Afterward, defining the poly-layer to form a poly-gate. The P-type ions are then implanted into the poly-gate and the substrate by way of using a self-aligned process. Finally, performing a thermal annealing process to form a uniform ion-implanting region and a poly-gate having a lower contact-resistance.

Abstract: First of all, a semiconductor substrate is provided. Then a gate oxide layer having an uniform thickness is formed on the semiconductor substrate by way of using thermal oxidation. Subsequently, a doping layer is formed on the gate oxide layer by a plasma doped process. Next, forming a poly-layer on the doping layer of the gate oxide layer, wherein the poly-layer has an ions-distribution. Afterward, defining the poly-layer to form a poly-gate. The P-type ions are then implanted into the poly-gate and the substrate by way of using a self-aligned process. Finally, performing a thermal annealing process to form a uniform ion-implanting region and a poly-gate having a lower contact-resistance.

Abstract: First of all, a semiconductor substrate is provided, and then a photoresist layer is formed and defined on the semiconductor substrate. The pulsed plasma doping is then performed by the photoresist layer as a mask to form a doping region and an undoping region on the semiconductor substrate. After removing the photoresist layer, performing a thermal oxidation process to form a thick gate oxide layer in the doping region and a thin gate oxide layer in the undoping region. Subsequently, two gates are respectively formed on the thick gate oxide layer and the thin gate oxide layer by means of the conventional process.

Abstract: A method for forming shallow trench isolation is disclosed. A pad oxide layer and a mask layer are sequentially formed on a substrate. Afterwards, an opening is formed through the mask layer and the pad oxide layer such that regions of the substrate are exposed. Thereafter, the exposed regions are etched to form trenches inside said substrate. Next, nitrogen ions are implanted into the sidewall of the trenches to form a silicon nitride layer, and then a siliconoxynitride layer is formed inside the sidewall of the trenches. Subsequently, a silicon oxide layer is formed on the siliconoxynitride layer and on the mask layer. The excess portion of the silicon oxide layer over said mask layer is removed to expose the mask layer, and then the mask layer is removed away. Finally, the pad oxide layer is removed by using hydrofluoric acid (HF).

Abstract: A method for forming an ultra-shallow junction by boron plasma doping is disclosed. A substrate is placed in a pulse type electric field. A flowing carrying gas drives boron ions in a channel above the substrate, and then a negative pulse type voltage is applied so that the boron ions may uniformly enter into the substrate. Then a rapid annealing process is performed so as to be formed with an ultra-shallow junction on the substrate. In the present invention, by the boron plasma doping, an ultra-shallow junction is provided on a surface of the substrate. Therefore, after the next thermal process, the property of the element can be retained. A lower depth junction is acquired, and the diffusion in the horizontal direction is suppressed.

Abstract: The present invention provides a method of forming different thickness” of a gate oxide layer simultaneously, by employing a pulse Nitrogen plasma implantation. The method provides a semiconductor substrate with the surface of the silicon in the semiconductor substrate separated into a first region and a second region at least. Then a thin surface on the surface of the silicon of the first region is implanted using a first predetermined concentration of the Nitrogen ions. The thin surface on the surface of the silicon in the second region is implanted using a second predetermined concentration of the Nitrogen ions. An oxidation process is subsequently performed. The first predetermined thickness and the second predetermined thickness of the silicon oxide layer are formed simultaneously on the surface of the silicon in the first region and in the second region. The Nitrogen ions are implanted in the surface of the silicon by forming the pulse nitrogen plasma in-situ.

Abstract: First of all, a semiconductor substrate is provided, and then a photoresist layer is formed and defined on the semiconductor substrate. The pulsed plasma doping is then performed by the photoresist layer as a mask to form a doping region and an undoping region on the semiconductor substrate. After removing the photoresist layer, performing a thermal oxidation process to form a thick gate oxide layer in the doping region and a thin gate oxide layer in the undoping region. Subsequently, two gates are respectively formed on the thick gate oxide layer and the thin gate oxide layer by means of the conventional process.

Abstract: A method for forming an ultra-shallow junction by boron plasma doping is disclosed. A substrate is placed in a pulse type electric field. A flowing carrying gas drives boron ions in a channel above the substrate, and then a negative pulse type voltage is applied so that the boron ions may uniformly enter into the substrate. Then a rapid annealing process is performed so as to be formed with an ultra-shallow junction on the substrate. In the present invention, by the boron plasma doping, an ultra-shallow junction is provided on a surface of the substrate. Therefore, after the next thermal process, the property of the element can be retained. A lower depth junction is acquired, and the diffusion in the horizontal direction is suppressed.