Patents by Inventor Wei-Wu Liao

Wei-Wu Liao has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Method for forming shallow trench isolation
    Patent number: 6200880
    Abstract: A method for forming a shallow trench isolation used to isolate a device is provided. A pad oxide and a mask layer are formed on a substrate and patterned. A trench is formed within the substrate under the patterned region and the trench is filled with insulator to form an insulation plug, which is a shallow trench isolation. A dielectric layer is formed on the whole substrate surface to cover the device region and the insulation plug.
    Type: Grant
    Filed: November 16, 1998
    Date of Patent: March 13, 2001
    Assignee: United Microelectronics Corp.
    Inventors: Sun-Chieh Chien, Chien-Li Kuo, Tzung-Han Lee, Wei-Wu Liao
  • Method of fabricating shallow trench isolation structures
    Patent number: 6153479
    Abstract: A method of fabricating shallow trench isolation structures. A substrate is provided and a masking layer and an oxide layer are formed respectively on the substrate. The masking layer, the oxide layer and the substrate are defined and an opening is formed within the substrate. A portion of masking layer and the oxide layer are removed and an insulating material is later formed to fill with the opening. The masking layer is removed and the shallow trench isolation structure of this invention is therefore achieved.
    Type: Grant
    Filed: May 7, 1998
    Date of Patent: November 28, 2000
    Assignee: United Microelectronics Corp.
    Inventors: Wei-Wu Liao, Andy Chuang, Chien-Li Kuo