Abstract: The present disclosure discloses a method for controlling plasma edge fuel particle backflow by powder feedback injection, including: measuring a real-time Da value by a visible spectrum diagnostic system; in the plasma control system, filtering the measured Da value by a low-pass filter, and setting a target Da value at the same time; when an actual Da value is greater than the set target Da value, calculating an output control voltage signal; wherein the magnitude of the output voltage ultimately determines the magnitude of the lithium powder injection flow rate; converting a voltage signal input by the plasma control system into a sine wave signal by the amplitude mapping converter, and outputting same to the lithium powder injection system; and receiving the voltage signal and injecting the lithium powder into the fusion device by the lithium powder injection system; wherein the injected lithium powder adsorbs the fuel particles generated by the interaction between the plasma and the wall, so that the bac

Abstract: Disclosed are a composite electron transport material and a preparation method therefor, and a light-emitting diode. The composite electron transport material includes a core and at least one shell coating the core. The core is made of an inorganic electron transport material; the shell is made of a material including a metal oxide; and a band gap of the metal oxide is wider than that of the inorganic electron transport material. In the composite electron transport material, by covering modification of the core by the shell, the band gap, the conduction band energy level, and the electrical conductivity of the inorganic electron transport material are improved.

Abstract: A T1fr gene coding a type 1 fimbrial repressor (T1FR) protein, whose nucleotide sequence is shown in SEQ ID NO: 1. An amino acid sequence of the TIFR protein is shown in SEQ ID NO: 2. Applications of the T1FR protein in the inhibition of fimbrial growth, and intestinal colonization and pathogenicity of an adherent-invasive Escherichia coli (AIEC) strain are further provided.

Abstract: A fault detection method includes: sequentially transmitting a first control signal to control chips corresponding to each of the plurality of battery switches after detecting a reverse feeding fault, when the plurality of battery switches are turned on and the plurality of utility power switches are turned off, causing a corresponding battery switch to be turned off; and detecting a difference between a front and a back terminal voltage of each of the plurality of utility power switches connected to the corresponding battery switch when the corresponding battery switch is turned off, where each of the plurality of utility power switches is off; determining that the plurality of utility power switches are short-circuited when a difference between the front terminal voltage and the back terminal voltage of at least one of the plurality of utility power switches is greater than or equal to a preset threshold; otherwise, determining that the plurality of utility power switches are normal.

Abstract: Methods and systems for managing memory usage in data learning operations. The method includes profiling one or more objects used for training in the data learning operation, in which the profiling includes determining an object size, a memory allocation timestamp, and a memory deallocation timestamp; and scheduling the memory usage. The scheduling includes grouping the one or more objects into the one or more groups based on the memory allocation and/or the memory deallocation timestamp of the one or more objects, and arranging the one or more objects in the one or more groups in descending order in a memory space. Two or more objects are provided in the descending order in the memory space, in which one of the objects having an earliest memory allocation timestamp is provided at a first value and the other object having a later memory allocation timestamp is provided at a second value.

Abstract: A computing device provides a user recommendation according to one or more privacy protocols. The computing device sends to a server one or more encrypted recommendation requests for recommendation information relating to a set of items, where the recommendation requests are encrypted by a cryptographic key not accessible to the server. The server uses the encrypted recommendation requests and a recommendation data store to generate one or more encrypted recommendation responses that it returns to the computing device using at least one of the privacy protocols, which prevents the server from accessing the encrypted recommendation request and recommendation response. The computing device receives from the server the encrypted recommendation responses relating to the set of items and decrypts the recommendation responses. Then, the computing device generates a user recommendation relating to the set of items from the decrypted recommendation responses and provides the recommendation to the user.

Abstract: Disclosed in the present disclosure are a transfer reinforcement learning method and apparatus, multi-task reinforcement learning method and apparatus, relating to the field of intelligent control technology. The transfer reinforcement learning method includes determining operational instructions for instructing an agent to perform a first task; determining an inclusion relation between multiple second tasks and the first tasks based on the operational instructions; determining a shared parameter set corresponding to the multiple second tasks based on the inclusion relation between the multiple second tasks and the first task, wherein the shared parameter set includes a plurality of parameters shared by the multiple second tasks; and performing transfer reinforcement learning based on the shared parameter set and the first task to obtain model parameters of a target policy model corresponding to the first task.

Abstract: A memory device, a memory system, and a fabrication method are provided. The memory device includes a first semiconductor structure including a memory cell array in a memory array region of the first semiconductor structure. The memory cell array includes an array of transistors and an array of storage units which connect to corresponding transistors. The first semiconductor structure further includes an isolation structure located between the memory array region and a contact region of the first semiconductor structure. The isolation structure isolates the array of storage units in the memory array region from the contact region.

Abstract: A memory device includes an array of memory cells in an array region and bit lines coupled with the memory cells in the array. The array includes a first sub-array and a second sub-array, and the bit lines extend in a bit line direction. The memory device further includes contact structures in a first connecting region and isolation walls. The contact structures are located between the first sub-array and the second sub-array, and the isolation walls are between the contact structures and the first sub-array, and between the contact structures and the second sub-array.

Abstract: Systems, devices, and methods for managing conductive channels in a semiconductor device are provided. In one aspect, a semiconductor device includes a plurality of array structures and a word line. An array structure of the plurality of array structures includes a plurality of memory cells. A memory cell of the plurality of memory cells includes a transistor and a capacitor that are stacked together along a first direction. A separation structure is provided which is surrounding the capacitors of the array structure. A connection structure is provided, which includes a layered structure and a conductive channel extending into the layered structure along the first direction. The separation structure separates the capacitors of the array structure from the connection structure. The conductive channel is coupled to the word line.

Abstract: Systems, devices, and methods for managing conductive channels in a semiconductor device are provided. In one aspect, a semiconductor device includes a plurality of array structures. An array structure of the plurality of array structures includes a plurality of memory cells. A memory cell of the plurality of memory cells includes a transistor and a capacitor that are stacked together along a first direction. A separation structure is provided which is surrounding the capacitors of the array structure. A connection structure is provided, which includes a layered structure and a conductive channel extending into the layered structure along the first direction. The separation structure separates the capacitors of the array structure from the connection structure. A first contact structure is coupled to a first end of the conductive channel. A second contact structure is coupled to a second end of the conductive channel.

Abstract: A memory device, a memory system, and a fabrication method are provided. The memory device includes a first semiconductor structure including a memory cell array in a memory array region of the first semiconductor structure. The memory cell array includes an array of transistors and an array of storage units which connect to corresponding transistors. The first semiconductor structure further includes an isolation structure surrounding the memory array region and isolating the array of storage units in the memory array region from a contact region of the first semiconductor structure.

Abstract: A reagent disc control device uses a combined rotary wheel to control an inner rod and an outer rod in a locking mechanism to move. By improving the structure of the combined rotary wheel, the locking mechanism can lock and release a reagent disc more stably and smoothly. Even if the rotary wheel is in direct contact with the locking mechanism, the locking mechanism will not shake. The locking mechanism is allowed to return to the initial state when it is not working, and to enter the working state when it needs to work. Springs in the locking mechanism do not need to be in a compressed state for a long time, and can be reused many times, thereby prolonging the service life and lowering the cost.

Abstract: Systems, devices, and methods for managing conductive channels in a semiconductor device are provided. In one aspect, a semiconductor device includes a plurality of array structures. An array structure of the plurality of array structures includes a plurality of memory cells. A memory cell of the plurality of memory cells includes a transistor and a capacitor that are stacked together along a first direction. A separation structure is provided which is surrounding the capacitors of the array structure. A connection structure is provided, which includes a layered structure and a conductive channel extending into the layered structure along the first direction. The separation structure separates the capacitors of the array structure from the connection structure. A bit line is provided extending along a second direction perpendicular to the first direction and coupled to the transistor. The conductive channel is coupled to the bit line.

Abstract: Some implementations of memory devices and fabrication method of the memory devices are provided. One of the memory devices includes an array of memory cells in a memory array area and a plurality of word lines extending, in a first direction, from the memory array area to a connection area. Each memory cell includes a semiconductor body. In the connection area, word-line interconnects extend in a third direction to connect with the plurality of word lines. The plurality of word lines include a first word line and a second word line arranged in a second direction and between two rows of the semiconductor bodies. In the second direction, a first distance between the first word line and the second word line in the connection area is greater than a second distance between the first word line and second word line in the memory array area.

Abstract: A method for controlling glass production includes: pouring a glass melt onto a glass production bath to form a glass ribbon; stretching the glass ribbon on the glass production bath with an edge roll proximate to an edge of the glass ribbon and in contact with an air side surface of the glass ribbon, the edge roll configured to control a width of the glass ribbon; receiving visual data from a camera positioned with a view of the glass ribbon; processing the visual data to determine a value of a dimension associated with the glass ribbon in a region proximate the edge roll; determining that the value of the dimension associated with the glass ribbon and/or an oscillational frequency of the value in the region proximate the edge roll fails to satisfy a threshold value; and generating an alert associated with the edge roll.

Abstract: Systems, devices, and methods for managing conductive channels in a semiconductor device are provided. In one aspect, a semiconductor device includes a plurality of array structures. An array structure of the plurality of array structures includes a plurality of memory cells. A memory cell of the plurality of memory cells includes a transistor and a capacitor that are stacked together along a first direction. A separation structure is surrounding the capacitors of the array structure, and the separation structure extends along the first direction. A connection structure is adjacent to the separation structure The connection structure includes a layered structure and a conductive channel extending into the layered structure along the first direction. The separation structure separates the capacitors of the array structure from the connection structure.

Abstract: A semiconductor device includes decks stacked over a semiconductor layer in a vertical direction. Each deck includes alternating word line layers and insulating layers. A gate line structure (GLS) extends through the word line layers and the insulating layers of the decks. A channel structure extends through the word line layers and the insulating layers of the decks. A sidewall of the GLS is discontinuous at a border between two neighboring decks, and a sidewall of the channel structure is discontinuous at an interface between two neighboring decks. The GLS includes a first GLS that includes a gate line slit, a second GLS that includes sub-GLSs spaced apart from each other in a horizontal direction, or a combination thereof.

Abstract: The disclosure is directed to user devices, base station devices, communication methods, and computer-readable storage media. Specifically, a first user device is provided, the first user device being associated with a device cluster, the first user device including a processing circuitry. The processing circuitry is configured to: perform a first transmission between the first user device and a second user device through a master user device of the device cluster via a first link; and perform a direct second transmission between the first user device and the second user device via a second link, wherein the first transmission is performed with non-competitive resources, and the second transmission is performed with competitive resources.