Patents by Inventor Wei-Yan Shih
Wei-Yan Shih has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
-
Patent number: 11977256Abstract: Various embodiments of the present disclosure are directed towards a semiconductor package comprising optically coupled integrated circuit (IC) chips. A first IC chip and a second IC chip overlie a substrate at a center of the substrate. A photonic chip overlies the first and second IC chips and is electrically coupled to the second IC chip. A laser device chip overlies the substrate, adjacent to the photonic chip and the second IC chip, at a periphery of the substrate. The photonic chip is configured to modulate a laser beam from the laser device chip in accordance with an electrical signal from the second IC chip and to provide the modulated laser beam to the first IC chip. This facilitates optical communication between the first IC chip to the second IC chip. Various embodiments of the present disclosure are further directed towards simultaneously aligning and bonding constituents of the semiconductor package.Type: GrantFiled: May 23, 2022Date of Patent: May 7, 2024Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.Inventors: Chih-Tsung Shih, Hau-Yan Lu, Wei-Kang Liu, Yingkit Felix Tsui
-
Patent number: 11740142Abstract: A piezoelectric sensor comprises a support structure, a channel extending through the support structure, a sensing material stack coupled to the support structure and extending over the channel, and a filler material disposed within the channel and over the sensing material stack. The sensing material stack comprises an structural layer, a first electrode layer disposed on the structural layer, a piezoelectric material disposed in a piezoelectric layer on the first electrode, and a second electrode disposed on the piezoelectric layer opposite the first electrode layer.Type: GrantFiled: September 27, 2021Date of Patent: August 29, 2023Assignee: TEXAS INSTRUMENTS INCORPORATEDInventor: Wei-Yan Shih
-
Patent number: 11487381Abstract: An integrated force sensing element includes a piezoelectric sensor formed in an integrated circuit (IC) chip and a strain gauge at least partially overlying the piezoelectric sensor, where the piezoelectric sensor is able to flex. A human-machine interface using the integrated force sensing element is also disclosed and may include a conditioning circuit, temperature gauge, FRAM and a processor core.Type: GrantFiled: July 15, 2019Date of Patent: November 1, 2022Assignee: TEXAS INSTRUMENTS INCORPORATEDInventors: Wei-Yan Shih, Steve Kummerl, Mark Stephen Toth, Alok Lohia, Terry Lee Sculley, Seung Bae Lee, Scott Robert Summerfelt
-
Patent number: 11393971Abstract: An improved differential sensor and corresponding apparatus implementing same. The differential sensor includes a substrate, an amplifier coupled to the substrate, and a plurality of highly-matched piezoelectric capacitors formed onto the substrate. A first set of the highly-matched piezoelectric capacitors are electrically coupled to a non-inverting input of the amplifier, and a second set of the highly-matched piezoelectric capacitors are electrically coupled to an inverting input of the amplifier to form an open loop differential amplifier.Type: GrantFiled: November 27, 2018Date of Patent: July 19, 2022Assignee: Texas Instruments IncorporatedInventors: Sudhanshu Khanna, Michael Zwerg, Steven C. Bartling, Brian Elies, Krishnasawamy Nagaraj, Wei-Yan Shih
-
Publication number: 20220011177Abstract: A piezoelectric sensor comprises a support structure, a channel extending through the support structure, a sensing material stack coupled to the support structure and extending over the channel, and a filler material disposed within the channel and over the sensing material stack. The sensing material stack comprises an structural layer, a first electrode layer disposed on the structural layer, a piezoelectric material disposed in a piezoelectric layer on the first electrode, and a second electrode disposed on the piezoelectric layer opposite the first electrode layer.Type: ApplicationFiled: September 27, 2021Publication date: January 13, 2022Inventor: Wei-Yan Shih
-
Publication number: 20210389174Abstract: In described examples, each node between adjacent capacitive elements of a stack of series-coupled capacitive elements is biased during a reset mode, where each of the capacitive elements includes piezoelectric material. A strain-induced voltage is generated across each of the capacitive elements. Each of the strain-induced voltages is combined to generate a piezoelectric-responsive output signal during a sensing mode at a time different from the time of the reset mode.Type: ApplicationFiled: August 31, 2021Publication date: December 16, 2021Inventors: Michael Zwerg, Sudhanshu Khanna, Steven C. Bartling, Brian Elies, Krishnasawamy Nagaraj, Wei-Yan Shih
-
Patent number: 11131589Abstract: A piezoelectric sensor comprises a support structure, a channel extending through the support structure, a sensing material stack coupled to the support structure and extending over the channel, and a filler material disposed within the channel and over the sensing material stack. The sensing material stack comprises an structural layer, a first electrode layer disposed on the structural layer, a piezoelectric material disposed in a piezoelectric layer on the first electrode, and a second electrode disposed on the piezoelectric layer opposite the first electrode layer.Type: GrantFiled: April 6, 2018Date of Patent: September 28, 2021Assignee: TEXAS INSTRUMENTS INCORPORATEDInventor: Wei-Yan Shih
-
Patent number: 11105676Abstract: In described examples, each node between adjacent capacitive elements of a stack of series-coupled capacitive elements is biased during a reset mode, where each of the capacitive elements includes piezoelectric material. A strain-induced voltage is generated across each of the capacitive elements. Each of the strain-induced voltages is combined to generate a piezoelectric-responsive output signal during a sensing mode at a time different from the time of the reset mode.Type: GrantFiled: November 14, 2018Date of Patent: August 31, 2021Assignee: Texas Instruments IncorporatedInventors: Michael Zwerg, Sudhanshu Khanna, Steven C. Bartling, Brian Elies, Krishnasawamy Nagaraj, Wei-Yan Shih
-
Patent number: 10873020Abstract: A piezoelectric sensor with: (i) a capacitive element, comprising piezoelectric material; (ii) a pre-conditioning circuit, comprising circuitry for establishing a polarization of the capacitive element in a polarizing mode; and (iii) signal amplification circuitry for providing a piezoelectric-responsive output signal, in response to charge across the capacitive element in a sensing mode.Type: GrantFiled: August 8, 2017Date of Patent: December 22, 2020Assignee: TEXAS INSTRUMENTS INCORPORATEDInventors: Wei-Yan Shih, Sudhanshu Khanna, Michael Zwerg, Juergen Luebbe, Gregory Allen North, Steven C. Bartling, Leah Trautmann, Scott Robert Summerfelt
-
Publication number: 20200168786Abstract: An improved differential sensor and corresponding apparatus implementing same. The differential sensor includes a substrate, an amplifier coupled to the substrate, and a plurality of highly-matched piezoelectric capacitors formed onto the substrate. A first set of the highly-matched piezoelectric capacitors are electrically coupled to a non-inverting input of the amplifier, and a second set of the highly-matched piezoelectric capacitors are electrically coupled to an inverting input of the amplifier to form an open loop differential amplifier.Type: ApplicationFiled: November 27, 2018Publication date: May 28, 2020Inventors: Sudhanshu Khanna, Michael Zwerg, Steven C. Bartling, Brian Elies, Krishnasawamy Nagaraj, Wei-Yan Shih
-
Publication number: 20190339806Abstract: An integrated force sensing element includes a piezoelectric sensor formed in an integrated circuit (IC) chip and a strain gauge at least partially overlying the piezoelectric sensor, where the piezoelectric sensor is able to flex. A human-machine interface using the integrated force sensing element is also disclosed and may include a conditioning circuit, temperature gauge, FRAM and a processor core.Type: ApplicationFiled: July 15, 2019Publication date: November 7, 2019Inventors: Wei-Yan Shih, Steve Kummerl, Mark Stephen Toth, Alok Lohia, Terry Lee Sculley, Seung Bae Lee, Scott Robert Summerfelt
-
Patent number: 10353503Abstract: An integrated force sensing element includes a piezoelectric sensor formed in an integrated circuit (IC) chip and a strain gauge at least partially overlying the piezoelectric sensor, where the piezoelectric sensor is able to flex. A human-machine interface using the integrated force sensing element may include a conditioning circuit, temperature gauge, FRAM and a processor core.Type: GrantFiled: October 29, 2015Date of Patent: July 16, 2019Assignee: TEXAS INSTRUMENTS INCORPORATEDInventors: Wei-Yan Shih, Steve Kummerl, Mark Stephen Toth, Alok Lohia, Terry Lee Sculley, Seung Bae Lee, Scott Robert Summerfelt
-
Publication number: 20190162590Abstract: In described examples, each node between adjacent capacitive elements of a stack of series-coupled capacitive elements is biased during a reset mode, where each of the capacitive elements includes piezoelectric material. A strain-induced voltage is generated across each of the capacitive elements. Each of the strain-induced voltages is combined to generate a piezoelectric-responsive output signal during a sensing mode at a time different from the time of the reset mode.Type: ApplicationFiled: November 14, 2018Publication date: May 30, 2019Inventors: Michael Zwerg, Sudhanshu Khanna, Steven C. Bartling, Brian Elies, Krishnasawamy Nagaraj, Wei-Yan Shih
-
Publication number: 20190051812Abstract: A piezoelectric sensor with: (i) a capacitive element, comprising piezoelectric material; (ii) a pre-conditioning circuit, comprising circuitry for establishing a polarization of the capacitive element in a polarizing mode; and (iii) signal amplification circuitry for providing a piezoelectric-responsive output signal, in response to charge across the capacitive element in a sensing mode.Type: ApplicationFiled: August 8, 2017Publication date: February 14, 2019Inventors: Wei-Yan Shih, Sudhanshu Khanna, Michael Zwerg, Juergen Luebbe, Gregory Allen North, Steven C. Bartling, Leah Trautmann, Scott Robert Summerfelt
-
Publication number: 20180231423Abstract: A piezoelectric sensor comprises a support structure, a channel extending through the support structure, a sensing material stack coupled to the support structure and extending over the channel, and a filler material disposed within the channel and over the sensing material stack. The sensing material stack comprises an structural layer, a first electrode layer disposed on the structural layer, a piezoelectric material disposed in a piezoelectric layer on the first electrode, and a second electrode disposed on the piezoelectric layer opposite the first electrode layer.Type: ApplicationFiled: April 6, 2018Publication date: August 16, 2018Inventor: Wei-Yan SHIH
-
Patent number: 9970831Abstract: A piezoelectric sensor comprises a support structure, a channel extending through the support structure, a sensing material stack coupled to the support structure and extending over the channel, and a filler material disposed within the channel and over the sensing material stack. The sensing material stack comprises an structural layer, a first electrode layer disposed on the structural layer, a piezoelectric material disposed in a piezoelectric layer on the first electrode, and a second electrode disposed on the piezoelectric layer opposite the first electrode layer.Type: GrantFiled: February 10, 2015Date of Patent: May 15, 2018Assignee: TEXAS INSTRUMENTS INCORPORATEDInventor: Wei-Yan Shih
-
Patent number: 9751108Abstract: An ultrasonic transducer. The ultrasonic transducer has an interposer having electrical connectivity contacts. The ultrasonic transducer also has an ultrasonic receiver, comprising an array of receiving elements, physically fixed relative to the interposer and coupled to electrically communicate with electrical connectivity contacts of the interposer. The ultrasonic transducer also has at least one ultrasonic transmitter, separate from the ultrasonic receiver, physically fixed relative to the interposer and coupled to electrically communicate with electrical connectivity contacts of the interposer.Type: GrantFiled: July 31, 2015Date of Patent: September 5, 2017Assignee: TEXAS INSTRUMENTS INCORPORATEDInventors: Wei-Yan Shih, Xiaochen Xu
-
Publication number: 20170217759Abstract: A MEMS device is formed by applying a lower polymer film to top surfaces of a common substrate containing a plurality of MEMS devices, and patterning the lower polymer film to form a headspace wall surrounding components of each MEMS device. Subsequently an upper polymer dry film is applied to top surfaces of the headspace walls and patterned to form headspace caps which isolate the components of each MEMS device. Subsequently, the MEMS devices are singulated to provide separate MEMS devices.Type: ApplicationFiled: March 20, 2017Publication date: August 3, 2017Inventors: Stuart M. Jacobsen, Wei-Yan Shih
-
Patent number: 9679864Abstract: A method forming a packaged semiconductor device includes providing a first semiconductor die (first die) having bond pads thereon mounted face-up on a package substrate or on a die pad of a lead frame (substrate), wherein the substrate includes terminals or contact pads (substrate pads). A first dielectric layer is formed including printing a first dielectric precursor layer including a first ink having a first liquid carrier solvent extending from the substrate pads to the bond pads. A first interconnect precursor layer is printed including a second ink having a second liquid carrier over the first dielectric layer extending from the substrate pads to the bond pads. Sintering or curing the first interconnect precursor layer removes at least the second liquid carrier to form an electrically conductive interconnect including an ink residue which connects respective substrate pads to respective bond pads.Type: GrantFiled: October 13, 2016Date of Patent: June 13, 2017Assignee: TEXAS INSTRUMENTS INCORPORATEDInventors: Benjamin Stassen Cook, Juan Alejandro Herbsommer, Matthew David Romig, Steven Alfred Kummerl, Wei-Yan Shih
-
Publication number: 20170123548Abstract: An integrated force sensing element includes a piezoelectric sensor formed in an integrated circuit (IC) chip and a strain gauge at least partially overlying the piezoelectric sensor, where the piezoelectric sensor is able to flex. A human-machine interface using the integrated force sensing element is also disclosed and may include a conditioning circuit, temperature gauge, FRAM and a processor core.Type: ApplicationFiled: October 29, 2015Publication date: May 4, 2017Inventors: Wei-Yan Shih, Steve Kummerl, Mark Stephen Toth, Alok Lohia, Terry Lee Sculley, Seung Bae Lee, Scott Robert Summerfelt