Abstract: Methods, systems, and devices for wireless communications are described. Techniques described herein provide HARQ design. In some examples, a user equipment (UE) may receive from a network entity, a transport block. The UE may transmit, to the network entity, one or more feedback messages that indicate that a reception of the transport block was unsuccessful and indicate a request for a time delay associated with a retransmission of the transport block. The UE may receive, from the network entity, the retransmission of the transport block. In some cases, the time delay may be a delayed timeline for a transmission of an acknowledgment feedback or a negative acknowledgment feedback associated with a reception of the retransmission of first transport block. In some examples, the time delay may be an extended transmission duration for the retransmission of the transport block.

Abstract: Various aspects of the present disclosure generally relate to wireless communication. In some aspects, a receiver device may receive encoded symbols, encoded using nonbinary polar coding, that include a set of information symbols, a set of partially frozen symbols, and a set of frozen symbols, where the set of information symbols and the set of partially frozen symbols indicate information bits, and where the set of information symbols indicate values in a set of values, and the set of partially frozen symbols indicate values in a proper subset of the set of values. The receiver device may decode the information bits from the encoded symbols. Numerous other aspects are described.

Abstract: Semiconductor structures and processes for forming the same provided. A semiconductor structure according to the present disclosure includes an insolation feature, a first base fin and a second base fin extending through and rising above the isolation feature, a first active region disposed over the first base fin, a second active region disposed over the second base fin, a gate structure disposed over the first active region, the second active region, and the isolation feature, and a protection layer sandwiched between the gate structure and the isolation feature.

Abstract: Disclosed in the present invention are a recombinant herpes zoster vaccine composition and an application thereof. Compared with other combinations of antigens and adjuvants, the novel vaccine composition provided by the present invention has a more beneficial immune effect.

Abstract: A processor may receive a request for a new computing task to be scheduled. The processor may identify that the new computing task requires processing in a cloud computing environment. The processor may identify resource needs of the new computing task. The processor may predict, utilizing an AI model, a future computing task based on the new computing task, where the future computing task requires processing at a future time in the cloud computing environment. The processor may identify resource needs of the future computing task. The processor may select one or more computing node hosts for processing the new computing task based on the future computing task.

Abstract: A wireless device determines a discontinuous reception (DRX) pattern for sidelink communication and performs sidelink activity within a DRX ON duration of the DRX pattern. A wireless device may transmit a sidelink discovery message including information about a DRX pattern of the first wireless device and may monitor for sidelink communication based on the DRX pattern. A second wireless device may receive a sidelink discovery message from the first wireless device including information about a DRX pattern of the first wireless device and may exchange sidelink communication with the first wireless device based on the DRX pattern.

Abstract: A vacuum kit adapted for a container is provided and includes a vacuum device and a liquid receiver detachably assembled with the vacuum device. The liquid receiver includes a receiving case, a sealing component and a buoyant device. The sealing component is disposed adjacent to an outlet of the receiving case. The buoyant device is movable between an initial position and a clamping position relative to the receiving case. After the buoyant device is driven by the liquid flowing out of the container to move from the initial position to an actuating position between the initial position and the clamping position, the buoyant device can be driven by a magnetic force to move from the actuating position to the clamping position to clamp the sealing component by the buoyant device and the receiving case for sealing the outlet of the receiving case. Besides, a related vacuum product is also provided.

Abstract: Semiconductor devices including backside vias with enlarged backside portions and methods of forming the same are disclosed. In an embodiment, a device includes a first transistor structure in a first device layer; a front-side interconnect structure on a front-side of the first device layer; a first dielectric layer on a backside of the first device layer; a first contact extending through the first dielectric layer to a source/drain region of the first transistor structure; and a backside interconnect structure on a backside of the first dielectric layer and the first contact, the first contact including a first portion having first tapered sidewalls and a second portion having second tapered sidewalls, widths of the first tapered sidewalls narrowing in a direction towards the backside interconnect structure, and widths of the second tapered sidewalls widening in a direction towards the backside interconnect structure.

Abstract: A semiconductor device includes a source/drain feature over a semiconductor substrate, channel layers connected to the source/drain feature, a gate structure between adjacent channel layers and wrapping the channel layers, and an inner spacer between the source/drain feature and the gate structure and between adjacent channel layers. The source/drain feature has a first interface with a first channel layer of the channel layer. The first interface has a convex profile protruding towards the first channel layer.

Abstract: A semiconductor structure includes a substrate, first and second channels, first and second gate structures, first source/drain structures, second source/drain structures, a separation plug, and an isolation material. The first and second channels are on the substrate. The first gate structure is across the first channel. The second gate structure is across the second channel. The first source/drain structures are on opposite sides of the first channel. The second source/drain structures are on opposite sides of the second channel. The separation plug has a first separation portion between the first and second gate structures and second and third separation portions extending laterally from the first separation portion beyond opposite sidewalls of the first gate structure in a top view. The isolation material surrounds one of the second and third separation portions in the top view.

Abstract: Various aspects of the present disclosure generally relate to wireless communication. In some aspects, a wireless communication device may identify, using a reliability sequence associated with a plurality of modulation orders and a subblock allocation sequence associated with a single modulation order of the plurality of modulation orders, an allocation of one or more information bits among one or more polar channel subblocks. The wireless communication device may transmit, in accordance with the single modulation order, the one or more information bits using the allocation of the one or more information bits among the one or more polar channel subblocks. Numerous other aspects are described.

Abstract: A method includes forming a structure having a dummy gate stack over a fin protruding from a substrate. The fin includes an ML of alternating semiconductor layers and sacrificial layers. The method further includes forming a recess in an S/D region of the ML, forming a recess of the ML, and forming inner spacers on sidewalls of the sacrificial layers. Each inner spacer includes a first layer embedded in the sacrificial layer and a second layer over the first layer. The method further includes forming an S/D feature in the recess, such that the second layer of the inner spacers is embedded in the S/D feature. The method further includes removing the dummy gate stack to form a gate trench, removing the sacrificial layers from the ML, thereby forming openings interleaved between the semiconductor layers, and subsequently forming a high-k metal gate stack in the gate trench and the openings.

Abstract: A semiconductor device structure and a method for forming a semiconductor device structure are provided. The semiconductor device structure includes a stack of channel structures over a semiconductor fin and a gate stack wrapped around the channel structures. The semiconductor device structure also includes a source/drain epitaxial structure adjacent to the channel structures and an isolation structure surrounding the semiconductor fin. A protruding portion of the semiconductor fin protrudes from a top surface of the isolation structure. The semiconductor device structure further includes an embedded epitaxial structure adjacent to a first side surface of the protruding portion of the semiconductor fin.

Abstract: A semiconductor device includes a base portion on a semiconductor substrate, a channel layer vertically above the base portion and extending parallel to a top surface of the semiconductor substrate, a gate portion between the channel layer and the base portion, a source/drain feature connected to the channel layer, an inner spacer between the source/drain feature and the gate portion, and an air gap between the source/drain feature and the semiconductor substrate. Moreover, a bottom surface of the source/drain feature is exposed in the air gap.

Abstract: Various aspects of the present disclosure generally relate to wireless communication. In some aspects, a user equipment (UE) may receive signaling indicating one or more selected priorities, of at least two priorities, to which a trigger for hybrid automatic repeat request (HARQ) feedback applies. The UE may receive downlink control information (DCI) including the trigger for the HARQ feedback and omitting a field indicating the one or more selected priorities. The UE may transmit the HARQ feedback for the one or more selected priorities in accordance with the signaling. Numerous other aspects are described.

Abstract: Methods, systems, and devices for wireless communications are described. A user equipment (UE) may receive an indication of an antenna port mapping from a network entity. The antenna port mapping may be between a tracking reference signal and a corresponding reference signal, the antenna port mapping indicating a mapping of a tracking reference signal port to a plurality of reference signal antenna ports associated with the corresponding reference signal. The UE may receive a tracking reference signal via the tracking reference signal port based on the antenna port mapping. The UE may perform a channel measurement procedure using the tracking reference signal based on the mapping.

Abstract: Certain aspects of the present disclosure provide techniques for facilitating control channel carrier switching for subslot-based cell. A method that may be performed by a user equipment (UE) includes receiving signaling configuring a first cell with physical uplink control channel (PUCCH) resources, configuring a second cell with PUCCH resources, and configuring at least one of the first cell or the second cell for subslot-based hybrid automatic repeat request acknowledgment (HARQ-ACK) reporting, receiving a physical downlink control channel (PDCCH), selecting, based on target PUCCH cell switching information, the first cell or the second cell as a target PUCCH cell for transmitting a PUCCH with HARQ-ACK feedback for the PDCCH or a physical downlink shared channel (PDSCH) scheduled by the PDCCH, and transmitting the PUCCH with the HARQ-ACK feedback in a subslot or slot on the target PUCCH cell, in accordance with the selection.

Abstract: Provided is a method for treating a SARS-CoV2 3CLpro-related disease in a subject in need thereof by blocking dimerization of 3C-like main protease (3CLpro) of the SARS-CoV2, including administering to the subject a first agent which binds to a first binding site of a SARS-CoV2 3CLpro complex and a second agent which binds to a second binding site of the SARS-CoV2 3CLpro complex, wherein the first binding site and the second binding site are functionally different sites in the three-dimensional structure of the SARS-CoV2 3CLpro complex. Also provided is a pharmaceutical combination including the first agent and the second agent for suppressing SARS-CoV2, thereby alleviating COVID-19.

Abstract: Methods, systems, and devices for wireless communication are described. A first user equipment (UE) may receive a control message that includes an indication to mute communications between the first UE and a second UE. The indication may be applicable to at least one communication link between the first UE and the second UE. The indication may include an identifier of the first UE, an identifier of the second UE, or an identifier of the at least one communication link. The first UE may receive the indication based on a power status of the first UE, a power status of the second UE, a reliability metric associated with the at least one communication link, or an interference metric associated with a network entity. Accordingly, the first UE may determine that the at least one communication link is muted for a time duration based on the indication.

Abstract: Certain aspects of the present disclosure provide techniques for interference measurement and reporting in sidelink. One aspect provides a method of wireless communication by a first user equipment (UE), including receiving signaling indicating resources, within a sidelink resource pool, that are configured for sidelink interference measurement. The method further includes transmitting, to at least a second UE, a first interference report that is based on interference measurements taken on the indicated resources.