Abstract: Semiconductor device and the manufacturing method thereof are disclosed herein. An exemplary semiconductor device comprises a substrate, at least two gate structures disposed over the substrate, each of the at least two gate structures including a gate electrode and a spacer disposed along sidewalls of the gate electrode, wherein the spacer includes a refill portion and a bottom portion, the refill portion of the spacer has a funnel shape such that a top surface of the refill portion of the spacer is larger than a bottom surface of the refill portion of the spacer, and a source/drain contact disposed over the substrate and between the spacers of the at least two gate structures.

Abstract: An electronic apparatus performs a method of coding video data. The method comprises: receiving, from the bitstream, syntax elements associated with a coding unit, wherein the syntax elements include a first coded block flag (CBF) for residual samples of a first chroma component, a second CBF for residual samples of a second chroma component, and a third syntax element indicating whether adaptive color transform (ACT) is applied to the coding unit; determining whether to perform the chroma residual scaling to the residual samples of the chroma components according to the first CBF, the second CBF, and the third syntax element; in accordance with a determination to perform the chroma residual scaling to the residual samples of the first and second chroma components, scaling the residual samples of the at least one of the first and second chroma components based on a corresponding scaling parameter.

Abstract: An adhesion film with a plurality of semiconductor packages thereupon may be positioned on a pedestal including an enclosure and having a perforated top surface, a first support ring located at a periphery of the perforated top surface, and a second support ring laterally surrounding the first support ring. A first semiconductor package overlaps segments of the first support ring at a plurality of overlap areas in a top-down view, and does not contact the second support ring in the top-down view. A vacuum suction may be applied to a volume within the enclosure and to a gap which is vertically bounded by a bottom surface of the adhesion film and is laterally bounded by the first support ring while holding the first semiconductor package stationary. A portion of the adhesion film underlying the first semiconductor package is peeled off a bottom surface of the first semiconductor package.

Abstract: An electronic apparatus performs a method of coding video data. The method comprises: receiving, from the bitstream, syntax elements associated with a coding unit, wherein the syntax elements include a first coded block flag (CBF) for residual samples of a first chroma component, a second CBF for residual samples of a second chroma component, and a third syntax element indicating whether adaptive color transform (ACT) is applied to the coding unit; determining whether to perform the chroma residual scaling to the residual samples of the chroma components according to the first CBF, the second CBF, and the third syntax element; in accordance with a determination to perform the chroma residual scaling to the residual samples of the first and second chroma components, scaling the residual samples of the at least one of the first and second chroma components based on a corresponding scaling parameter.

Abstract: A semiconductor package structure includes a semiconductor die encapsulated in a molding compound, a redistribution structure over the semiconductor die and the molding compound, a surface device over and electrically connected to the redistribution structure, a first connector over and electrically connected to the redistribution structure, a second connector between the surface device and the redistribution structure, a trench in the redistribution structure and laterally surrounding the surface device in a top view of the semiconductor package structure, and an underfill. The second connector electrically connects the surface device to the redistribution structure. The underfill surrounds the second connector. The underfill include a first portion and a second portion. The first portion of the underfill is located between the surface device and the redistribution structure and laterally surrounding the second connector, and the second portion of the underfill is disposed in the trench.

Abstract: An electronic apparatus performs a method of coding video data. The method comprises: receiving, from the bitstream, syntax elements associated with a coding unit, wherein the syntax elements include a first coded block flag (CBF) for residual samples of a first chroma component, a second CBF for residual samples of a second chroma component, and a third syntax element indicating whether adaptive color transform (ACT) is applied to the coding unit; determining whether to perform the chroma residual scaling to the residual samples of the chroma components according to the first CBF, the second CBF, and the third syntax element; in accordance with a determination to perform the chroma residual scaling to the residual samples of the first and second chroma components, scaling the residual samples of the at least one of the first and second chroma components based on a corresponding scaling parameter.

Abstract: Disclosed is a method to fabricate a multifunctional collimator structure In one embodiment, an optical collimator, includes: a dielectric layer; a substrate; and a plurality of via holes, wherein the dielectric layer is formed over the substrate, wherein the plurality of via holes are configured as an array along a lateral direction of a first surface of the dielectric layer, wherein each of the plurality of via holes extends through the dielectric layer and the substrate from the first surface of the dielectric layer to a second surface of the substrate in a vertical direction, wherein the substrate has a bulk impurity doping concentration equal to or greater than 1×1019 per cubic centimeter (cm?3) and a first thickness, and wherein the bulk impurity doping concentration and the first thickness of the substrate are configured so as to allow the optical collimator to filter light in a range of wavelengths.

Abstract: A semiconductor device structure is provided. The semiconductor device structure includes a substrate and a magnetic element over the substrate. The magnetic element has multiple sub-layers, and each sub-layer is wider than another sub-layer above it. The semiconductor device structure also includes an isolation layer extending exceeding edges the magnetic element, and the isolation layer contains a polymer material. The semiconductor device structure further includes a conductive line over the isolation layer and extending exceeding the edges of the magnetic element.

Abstract: The present disclosure describes a semiconductor device with a rare earth metal oxide layer and a method for forming the same. The method includes forming fin structures on a substrate and forming superlattice structures on the fin structures, where each of the superlattice structures includes a first-type nanostructured layer and a second-type nanostructured layer. The method further includes forming an isolation layer between the superlattice structures, implanting a rare earth metal into a top portion of the isolation layer to form a rare earth metal oxide layer, and forming a polysilicon structure over the superlattice structures. The method further includes etching portions of the superlattice structures adjacent to the polysilicon structure to form a source/drain (S/D) opening and forming an S/D region in the S/D opening.

Abstract: A transmission device for suppressing the glass-fiber effect includes a circuit board and a transmission line. The circuit board includes a plurality of glass fibers, so as to define a fiber pitch. The transmission line is disposed on the circuit board. The transmission line includes a plurality of non-parallel segments. Each of the non-parallel segments of the transmission line has an offset distance with respect to a reference line. The offset distance is longer than or equal to a half of the fiber pitch.

Abstract: A polymer, which is a composition of a battery, includes a polyester. The polyester is polymerized by at least two monomers, wherein each of the at least two monomers is selected from a group consisting of a carbonate ester and a polyol. The polyester can further include an end-capped polycarbonate ester, and the end-capped polycarbonate ester includes an inert group on an end thereof.

Abstract: An integrated circuit device includes a first-type active-region semiconductor structure extending and a second-type active-region semiconductor structure both extending in a first direction. The second-type active-region semiconductor structure is stacked with the first-type active-region semiconductor structure. The integrated circuit device also includes a front-side conductive layer above the two active-region semiconductor structures and a back-side conductive layer below the two active-region semiconductor structures. The integrated circuit device still includes a front-side power rail extending in the second direction in the front-side conductive layer and a back-side power rail extending in the second direction in the back-side conductive layer. The integrated circuit device further includes a first source conductive segment connected to the front-side power rail and a second source conductive segment connected to the back-side power rail.

Abstract: An electronic device is provided. The electronic device includes a first subscriber identity module (SIM), a second SIM, and a processor. The processor is configured to merge a first signal from the first SIM and a second signal from the second SIM and transmit the first signal and the second signal through a radio frequency front end (RFFE) transmission path concurrently, in response to a determination that the first signal and the second signal are intra-band signals and the first SIM and the second SIM share one RFFE transmission path.

Abstract: A memory device comprises a source region, a drain region, a channel region, a gate dielectric layer, an MTJ stack, and a metal gate. The source region and the drain region are over a substrate. The channel region is between the source region and the drain region. The gate dielectric layer is over the channel region. The MTJ stack is over the gate dielectric layer. The MTJ stack comprises a first ferromagnetic layer, a second ferromagnetic layer with a switchable magnetization, and a tunnel barrier layer between the first and second ferromagnetic layers. The metal gate is over the MTJ stack.

Abstract: A method includes forming signal lines in a pair of neighboring metal layers of a semiconductor device, and forming first dummy conductive cells in an empty area without metal lines passing therethrough, between the pair of neighboring metal layers. At least two dummy conductive cells of the first dummy conductive cells that are separated from each other, and the at least two dummy conductive cells fully overlap one of the signal lines in plan view.

Abstract: Methods for video decoding and encoding, apparatuses and non-transitory computer-readable storage media thereof are provided. In one method for video decoding, a binary arithmetic decoder may obtain, according to an adaptive weight, a multi-hypothesis probability for a binary symbol of a context model for the binary arithmetic decoder, where the multi-hypothesis probability indicates a probability of the binary symbol equaling to a binary value, and the binary symbol is from a plurality of binary symbols associated with the context model. Furthermore, the decoder may decode the binary symbol according to the multi-hypothesis probability.

Abstract: Methods, apparatuses, and non-transitory computer-readable storage mediums are provided for video coding. In one method, a decoder obtains a first signaled flag that indicates whether a template-based intra mode derivation (TIMD) mode is applied on a current video block; and in response to determining that the TIMD mode is applied on the current video block based on the first signaled flag, the decoder obtains a second signaled flag in transform block (TB), coding block (CB), slice, picture, or sequence level that indicates whether signaling of an index of a template for TIMD is enabled, where the index of the template is signaled to derive the intra prediction mode for the current video block.

Abstract: A semiconductor package includes a package substrate having a top surface and an opposing bottom surface. The package substrate includes a top build-up wiring layer and an upper dielectric layer covering the top build-up wiring layer. A semiconductor device and a passive component are mounted on the top surface of the package substrate in a side-by-side manner. A molding compound encapsulates the semiconductor device and the passive component on the top surface of the package substrate. A cavity is disposed between the passive component and the top surface of the package substrate.

Abstract: A core test method, for testing a processing circuit with multi cores, comprising: (a) testing defects of the cores to determine at least one failed core; (b) recording the failed core; (c) performing a performance test to all of the cores to generate performance data; and (d) filtering the performance data based on the failed core recorded in the step (b).

Abstract: An image lens assembly includes five lens elements, which are, in order from an object side to an image side along an optical path, a first lens element, a second lens element, a third lens element, a fourth lens element and a fifth lens element. The first lens element has positive refractive power. The third lens element has negative refractive power. The fourth lens element with positive refractive power has an object-side surface being convex in a paraxial region thereof and an image-side surface being convex in a paraxial region thereof. The fifth lens element has an object-side surface being convex in a paraxial region thereof and an image-side surface being concave in a paraxial region thereof. The image-side surface of the fifth lens element includes at least one convex critical point in an off-axis region thereof.