Abstract: The described embodiments of mechanisms of forming a die package and package on package (PoP) structure involve forming a solder paste layer over metal balls of external connectors of a die package. The solder paste layer protects the metal balls from oxidation. In addition, the solder paste layer enables solder to solder bonding with another die package. Further, the solder paste layer moves an intermetallic compound (IMC) layer formed between the solder paste layer and the metal balls below a surface of a molding compound of the die package. Having the IMC layer below the surface strengthens the bonding structure between the two die packages.

Abstract: The present disclosure provides an illumination device. The illumination device includes a cap structure. The cap structure is partially coated with a reflective material operable to reflect light. The illumination device includes one or more lighting-emitting devices disposed within the cap structure. The light-emitting devices may be light-emitting diode (LED) chips. The illumination device also includes a thermal dissipation structure. The thermal dissipation structure is coupled to the cap structure in a first direction. The thermal dissipation structure and the cap structure have a coupling interface. The coupling interface extends in a second direction substantially perpendicular to the first direction. The thermal dissipation structure has a portion that intersects the coupling interface at an angle. The angle is in a range from about 60 degrees to about 90 degrees according to some embodiments.

Abstract: A thin film transistor structure including a substrate, a gate, an oxide semiconductor layer, a gate insulation layer, a source, a drain, a silicon-containing light absorption layer and an insulation layer is provided. The gate insulation layer is disposed between the oxide semiconductor layer and the gate. The oxide semiconductor layer and the gate are stacked in a thickness direction. The source and the drain contact the oxide semiconductor layer. A portion of the oxide semiconductor layer without contacting the source and the drain defines a channel region located between the source and the drain. The oxide semiconductor layer is located between the substrate and the silicon-containing light absorption layer. The silicon-containing light absorption layer has a band gap smaller than 2.5 eV. The insulation layer is disposed between the oxide semiconductor layer and the silicon-containing light absorption layer, and in contact with the silicon-containing light absorption layer.

Abstract: An image capturing lens system includes four lens elements with refractive power, in order from an object side to an image side, a first lens element, a second lens element, a third lens element and a fourth lens element. The positive first lens element has a convex object-side surface at a paraxial region. The negative second lens element has a concave object-side surface at a paraxial region and an image-side surface changing from concave at a paraxial region to convex at a peripheral region, wherein the surfaces of the second lens element are aspheric. The positive third lens element has a concave object-side surface at a paraxial region and a convex image-side surface at a paraxial region. The negative fourth lens element has an image-side surface changing from concave at a paraxial region to convex at a peripheral region, and the surfaces of the fourth lens element are aspheric.

Abstract: A light-emitting diode (LED) with a mirror protection layer includes sequentially stacked an N-type electrode, an N-type semiconductor layer, a light-emitting layer, a P-type semiconductor layer, a metal mirror layer, a protection layer, a buffer layer, a binding layer, a permanent substrate, and a P-type electrode. The protection layer is made of metal oxide, and has a hollow frame for covering or supporting edges of the metal mirror layer.

Abstract: An image adjustment method includes the steps of: a) configuring a weight-value generator to receive first image data and specified data and to generate an adaptive weight value according to the first image data and the specified data; and b) configuring an image blender to receive the first image data and second image data, and to generate adjusted image data by blending the first image data and the second image data with reference to the adaptive weight value. The adaptive weight value has a magnitude that corresponds to a difference between the first image data and the specified data.

Abstract: A ring-type remote control device, a scaling control method and a tap control method are provided. The ring-type remote control device includes a processing unit, a wireless communication module, a motion sensor module and a proximity sensor. The motion sensor module detects position information of the ring-type remote control device. The proximity sensor detects a distance variation between the first and second fingers of a user. When the processing unit determines the distance decreases according to the position information and the distance information, a reduced signal is generated and transferred to the wireless communication module. When the processing unit determines the distance increases, an enlarged signal is generated and transferred to the wireless communication module. The wireless communication module transmits a command corresponding to the reduced signal or the enlarged signal to an interactive receiving device, so as to generate an interactive operation.

Abstract: Methods and apparatus are disclosed for ameliorating signal reception. An example method disclosed herein includes receiving a composite satellite signal comprising a desired signal component and an interference signal component, converting the received composite satellite signal to a digital received composite signal, receiving a first group of samples from the digital received composite signal, generating an interference estimate of the interference signal component based on the first group of samples, combining the interference estimate and a second sample belonging to a second group of samples to remove, partially or entirely, the interference signal component from the composite satellite signal, the first group of samples received prior to the sample belonging to the second group of samples, wherein the removal is generally independent of the code chip rate of the desired signal component and substantially retains the undistorted chip edge characteristics of the desired signal component.

Abstract: A touch control method and handheld device utilizing the same are provided. The touch control method is disclosed, adopted by a handheld device comprising a primary touch control device and a secondary touch control device, comprising: displaying, by the primary touch control device, a screen; receiving, by the secondary touch control device, a first input; and based on the first input, determining and executing, by the controller, an operating program or an application program for generating the screen displayed on the primary touch control device; wherein the primary touch control device and the secondary touch control device are located on two different sides on the handheld device.

Abstract: A circuit with an electro-static discharge clamp coupled to a first power source and second power source. The electro-static discharge clamp includes an NMOS stack and an electro-static discharge detector. The NMOS stack has a first NMOS transistor with gate node ng1 and a second NMOS transistor with gate node ng2. The electro-static discharge detector is configured to control the NMOS stack, and may include three switches. A first switch is configured to switch the gate node ng1 to the second power source. A second switch is configured to switch the gate node ng1 to the gate node ng2. A third switch is configured to switch the gate node ng1 to the ground.

Abstract: The present disclosure provides one embodiment of an illumination structure. The illumination structure includes a light-emitting diode (LED) device on a substrate; a lens secured on the substrate and over the LED device; and a diffuser cap secured on the substrate and covering the lens, wherein the lens and diffuser cap are designed and configured to redistribute emitting light from the LED device for wide angle illumination.

Abstract: Incremental training data is used to supplement a trained model to provide personalized recommendations for a user. The personalized recommendations can be made by taking into account the user's behavior, such as, without limitation, the user's short and long term web page interactions, to identify item recommendations. A trained model is generated from training data indicative of the web page interaction data collected from a plurality of users. Incremental training data indicative of other web page interaction data can be used to supplement the trained model, or in place of the trained model. Incremental training data can be indicative of user behavior collected more recently than the data used to train the model, for example.

Abstract: An imaging lens system includes, in order from an object side to an image side, a first lens element, a second lens element, a third lens element, a fourth lens element and a fifth lens element. The first lens element with positive refractive power has a convex object-side surface. The second lens element has positive refractive power. The third lens element has positive refractive power. The fourth lens element has refractive power. The fifth lens element with refractive power has a concave image-side surface at a paraxial region, and the image-side surface thereof changes from concave at the paraxial region to convex at a peripheral region, wherein both of an object-side surface and the image-side surface are aspheric.

Abstract: A solar cell includes a semiconductor substrate, a back electrode layer and a front electrode layer including a first bus bar, a second bus bar, first finger bar units, second finger bar units, first interconnecting bars, and second interconnecting bars. The first finger bar units are spaced apart from the second finger bar units. Each of the first finger bar units has first finger bars and a first auxiliary bar connected to the first finger bars. Each of the second finger bar units has second finger bars and a second auxiliary bar connected to the second finger bars. Each first interconnecting bar interconnects two adjacent first finger bar units. Each second interconnecting bar interconnects two adjacent second finger bar units.

Abstract: The present disclosure provides a method and system for characterizing a pattern loading effect. A method may include performing a reflectivity measurement on a semiconductor wafer and determining an anneal process technique based on the reflectivity measurement. The determining the anneal process technique may include determining a spatial distance for a reflectivity change using a reflectivity map generated using the reflectivity measurement. This spatial distance is compared with the thermal diffusion length associated with each of the plurality of anneal process techniques. In an embodiment, a thermal profile map and/or a device performance map may be provided.

Abstract: A light-emitting element includes a light-emitting stack includes: a first semiconductor layer; an active layer formed on the first semiconductor layer; and a second semiconductor layer formed on the active layer; a recess structure formed through the second semiconductor layer, the active layer, and extended in the first semiconductor layer, wherein the first semiconductor layer includes a contact region defined by the recess structure; a first electrode structure including a first contact portion on the contact region of the first semiconductor layer, and a second contact portion laterally extended from the first contact portion into the first semiconductor layer; and a dielectric layer formed on side surfaces of the second semiconductor layer and the active layer to insulate the second semiconductor layer and the active layer from the first contact portion.

Abstract: A package on package structure includes a first substrate having a first region and a second region, a bump formed on the first region of the first substrate, a first semiconductor die bonded to the second region of the first substrate, and a semiconductor die package bonded to the first substrate. The bump includes a metallic structure and a plurality of minor elements dispersed in the metallic structure. The semiconductor die package includes a connector bonded to the bump, and the first semiconductor die is between the semiconductor die package and the first substrate.

Abstract: A continuous reflection curved mirror structure is applied to a vertical light-emitting diode (LED) which includes a P-type electrode, a permanent substrate, a binding layer, a buffer layer, a mirror layer, a P-type semiconductor layer, a light-emitting layer, an N-type semiconductor layer and an N-type electrode that are stacked in sequence. Between the P-type semiconductor layer and the mirror layer is a filler. The filler is located right below the N-type electrode to form a protruding continuous curved surface facing the light-emitting layer. The mirror layer forms a mirror structure along the protruding continuous curved surface. With reflection provided by the mirror structure, excited light from the light-emitting layer is reflected towards two sides, so that the excited light can dodge the N-type electrode without being shielded to increase light extraction efficiency.

Abstract: A semiconductor light-emitting device is provided. The semiconductor light-emitting device includes a buffer layer, a light-emitting layer, a first-conductivity semiconductor layer, a first light reflecting layer, a protective structure, and an adhesive layer. The first-conductivity semiconductor layer is disposed between the buffer layer and a first side of the light-emitting layer. The first light reflecting layer is disposed between the first-conductivity semiconductor layer and the buffer layer. The protective structure is disposed between the first reflecting layer and the buffer layer. The adhesive layer is disposed between the first-conductivity semiconductor layer and the protective structure.

Abstract: An optical image capturing lens system includes, in order from an object side to an image side, a first lens element, a second lens element and a third lens element. The first lens element with positive refractive power has an object-side surface being convex at a paraxial region. The second lens element with positive refractive power is made of plastic material, and has an object-side surface being convex at a paraxial region and an image-side surface being concave at a paraxial region, wherein the surfaces of the second lens element are aspheric. The third lens element with negative refractive power is made of plastic material, and has an object-side surface being concave or planar at a paraxial region and an image-side surface being concave at a paraxial region and being convex at a peripheral region, wherein the surfaces of the third lens element are aspheric.