Abstract: An electronic device is provided. The electronic device includes a protective layer, a chip disposed on the protective layer, a first connector electrically connected to the chip, and an antenna unit disposed on the first connector and electrically connected to the chip. The antenna unit includes a pattern layer and a covering layer disposed on the pattern layer. The pattern layer includes a first surface and the covering layer includes a second surface. The first surface is rougher than the second surface.

Abstract: An electronic device includes an electronic component including a chip and a protective layer disposed on the active surface of the chip; an encapsulation layer surrounding the electronic component; and a circuit structure contacting the first surface of the encapsulation layer and electrically connecting the electronic component. The protective layer has a second surface away from the active surface, and a first step difference between the first surface and the second surface is between 1 and 10 ?m.

Abstract: An electronic device includes a substrate, a circuit layer, at least one electronic unit, a stress adjustment layer, and a buffer layer. The substrate has a first surface and a second surface opposite to each other and at least one side connected to the first surface and the second surface. The circuit layer is disposed on the first surface of the substrate. The at least one electronic unit is electronically connected to the circuit layer. The stress adjustment layer is disposed on the second surface of the substrate. The buffer layer surrounds the substrate, wherein the stress adjustment layer is located between the substrate and the buffer layer, and the buffer layer is in contact with the at least one side of the substrate.

Abstract: An electronic includes an electronic element, an encapsulation layer surrounding the electronic element, a first circuit structure, a second circuit structure and a connecting structure. The encapsulation layer has a top surface, a bottom surface and an opening, wherein a sidewall of the opening connects the top surface and the bottom surface. The first circuit structure is disposed at the top surface of the encapsulation layer. The second circuit structure is disposed at the bottom surface of the encapsulation layer. The connecting structure is disposed in the opening, wherein the electronic element is electrically connected to the second circuit structure through the first circuit structure and the connecting structure. The connecting structure includes a first sub layer and a second sub layer, the first sub layer is located between the encapsulation layer and the second sub layer, and the first sub layer covers the sidewall of the opening.

Abstract: Provided is a forming method of a redistribution structure including: forming a first redistribution layer and a first compensation circuit layer on a substrate, wherein the first compensation circuit layer surrounds the first redistribution layer, and the first compensation circuit layer and the first redistribution layer are electrically insulated from each other; forming a first dielectric layer on the first redistribution layer and the first compensation circuit layer; and forming a second redistribution layer and a second compensation circuit layer on the first dielectric layer, wherein the second compensation circuit layer surrounds the second redistribution layer, the second compensation circuit layer and the second redistribution layer are electrically insulated from each other, the second compensation circuit layer is connected to the first compensation circuit layer, and the second redistribution layer is connected to the first redistribution layer.

Abstract: Provided is a forming method of a redistribution structure including: forming a first redistribution layer and a first compensation circuit layer on a substrate, wherein the first compensation circuit layer surrounds the first redistribution layer, and the first compensation circuit layer and the first redistribution layer are electrically insulated from each other; forming a first dielectric layer on the first redistribution layer and the first compensation circuit layer; and forming a second redistribution layer and a second compensation circuit layer on the first dielectric layer, wherein the second compensation circuit layer surrounds the second redistribution layer, the second compensation circuit layer and the second redistribution layer are electrically insulated from each other, the second compensation circuit layer is connected to the first compensation circuit layer, and the second redistribution layer is connected to the first redistribution layer.

Abstract: A chip package structure including a redistribution structure layer, at least one chip, and an encapsulant is provided. The redistribution structure layer includes at least one redistribution circuit, at least one transistor electrically connected to the redistribution circuit, and a plurality of conductive vias electrically connected to the redistribution circuit and the transistor. The chip is disposed on the redistribution structure layer and electrically connected to the redistribution structure layer. The encapsulant is disposed on the redistribution structure layer and at least encapsulates the chip. A manufacturing method of a chip package structure is also provided.

Abstract: A multiplayer sports formation arrangement prompting method adapted to monitor, by a computing device, a formation of a plurality of athletes participating in a multiplayer sport to prompt each of the athletes to adjust a position is provided, in which at least two wind sensors and a positioning device are disposed on or around each of the athletes.

Abstract: An electronic device package structure and a manufacturing method thereof are provided. The electronic device package structure includes a first electronic device layer, a second electronic device layer, and a filling layer disposed between the first electronic device layer and the second electronic device layer, wherein the Young's modulus of the second electronic device layer is less than or equal to the Young's modulus of the first electronic device layer, and the Young's modulus of the filling layer is less than the Young's modulus of the second electronic device layer, and the ratio of the Young's modulus of the first electronic device layer to the Young's modulus of the filling layer is 10 to 1900 and the ratio of the Young's modulus of the second electronic device layer to the Young's modulus of the filling layer is 7.6 to 1300.

Abstract: A chip package structure includes a redistribution circuit layer, at least one chip and an encapsulation material. The redistribution circuit layer includes at least one transistor. The chip is arranged on the redistribution circuit layer and is electrically connected to the redistribution circuit layer. The encapsulation material is arranged on the redistribution circuit layer and covers the at least one chip. When the chip package structure includes one or more chips, a position of the chip is taken as a reference for arrangement of a position of the at least one transistor.

Abstract: A package structure includes a redistribution layer, a chip, an encapsulant, an under bump supporting layer, an attachment layer and solder balls. The redistribution layer includes a first surface, a second surface opposite to the first surface and a patterned circuit layer disposed on the first surface, wherein an outer surface of the patterned circuit layer and the first surface are coplanar. The chip is disposed on the second surface and electrically connected to the patterned circuit layer. The encapsulant is disposed on the second surface to encapsulate the chip. The under bump supporting layer is disposed on the first surface and includes openings for exposing the outer surface. The attachment layer covers the inner surface of each opening and the exposed portion of the patterned circuit layer. The solder balls are disposed in the openings respectively and electrically connected to the patterned circuit layer.

Abstract: A package structure includes a redistribution layer, a chip, an encapsulant, a plurality of under ball release layers, and a plurality of solder balls. The redistribution layer includes a first surface, a second surface opposite to the first surface, and a patterned circuit layer, wherein the patterned circuit layer includes a plurality of pads protruding from the first surface. The chip is disposed on the second surface and electrically connected to the patterned circuit layer. The encapsulant is disposed on the second surface and encapsulates the chip. The under ball release layers cover the pads respectively. The solder balls are disposed on the under ball release layers and electrically connected to the pads.

Abstract: A chip package structure including a redistribution structure layer, at least one chip, and an encapsulant is provided. The redistribution structure layer includes at least one redistribution circuit, at least one transistor electrically connected to the redistribution circuit, and a plurality of conductive vias electrically connected to the redistribution circuit and the transistor. The chip is disposed on the redistribution structure layer and electrically connected to the redistribution structure layer. The encapsulant is disposed on the redistribution structure layer and at least encapsulates the chip. A manufacturing method of a chip package structure is also provided.

Abstract: A semiconductor package structure includes a redistribution structure, a chip, an upper dielectric layer, a plurality of conductive members and an encapsulation layer. The redistribution structure includes a redistribution layer and a first dielectric layer disposed on the redistribution layer. The upper dielectric layer is disposed between the chip and the first dielectric layer of the redistribution structure, wherein the upper dielectric layer and the first dielectric layer are organic materials. A plurality of conductive members is disposed between the redistribution layer and the chip. Each conductive member has a first end adjacent to the chip and a second end adjacent to the redistribution structure, wherein the first end of said each conductive member contacts with the upper dielectric layer and the second end of said each conductive member contacts with the first dielectric layer.

Abstract: A chip bonding apparatus for bonding a chip and a redistribution structure with each other is provided. The chip bonding apparatus includes a pick and place module and an alignment module. The pick and place module is suitable for picking up and placing the chip. The alignment module is movably connected to the pick and place module. The alignment module includes at least one alignment protrusion, wherein the at least one alignment protrusion extends toward at least one alignment socket included in the redistribution structure. Furthermore, a chip bonding method and a chip package structure are provided.

Abstract: A chip bonding apparatus for bonding a chip and a redistribution structure with each other is provided. The chip bonding apparatus includes a pick and place module and an alignment module. The pick and place module is suitable for picking up and placing the chip. The alignment module is movably connected to the pick and place module. The alignment module includes at least one alignment protrusion, wherein the at least one alignment protrusion extends toward at least one alignment socket included in the redistribution structure. Furthermore, a chip bonding method and a chip package structure are provided.

Abstract: A redistribution layer structure of the semiconductor package includes a dielectric layer having a thickness, at least one upper conductive wire disposed on a first surface of the dielectric layer, at least one lower conductive wire disposed on a second surface of the dielectric layer, and vias penetrating the dielectric layer and connecting the at least one upper conductive wire and the at least one lower conductive wire. Each via has a cross-section at one upper conductive wire. The cross-section has a third width. The ratio of the third width to the thickness of the dielectric layer is less than or equal to 1. The ratio of the pitch between every two adjacent vias to the third width is greater than or equal to 0.5.

Abstract: A semiconductor package structure includes a redistribution structure, a chip, an upper dielectric layer, a plurality of conductive members and an encapsulation layer. The redistribution structure includes a redistribution layer and a first dielectric layer disposed on the redistribution layer. The upper dielectric layer is disposed between the chip and the first dielectric layer of the redistribution structure, wherein the upper dielectric layer and the first dielectric layer are organic materials. A plurality of conductive members is disposed between the redistribution layer and the chip. Each conductive member has a first end adjacent to the chip and a second end adjacent to the redistribution structure, wherein the first end of said each conductive member contacts with the upper dielectric layer and the second end of said each conductive member contacts with the first dielectric layer.