Abstract: Embodiments of the invention generally relate to apparatus and methods for cleaning chamber components using a cleaning plate. The cleaning plate is adapted to be positioned on a substrate support during a cleaning process, and includes a plurality of turbulence-inducing structures. The turbulence-inducing structures induce a turbulent flow of cleaning gas while the cleaning plate is rotated during a cleaning process. The cleaning plate increases the retention time of the cleaning gas near the showerhead during cleaning. Additionally, the cleaning plate reduces concentration gradients within the cleaning plate to provide a more effective clean. The method includes positioning a cleaning plate adjacent to a showerhead, and introducing cleaning gas to the space between the showerhead and the cleaning plate. A material deposited on the surface of the showerhead is then heated and vaporized in the presence of the cleaning gas, and then exhausted from the processing chamber.

Abstract: Methods of fabricating light emitting diodes using a degas process are described. For example, a method includes providing a partially formed group III-V material layer stack of an LED. Contaminants are removed from the partially formed group III-V material layer stack by a degas process. Formation of the group III-V material layer stack of the LED is then completed.

Abstract: Enhanced magnesium incorporation into gallium nitride films through high pressure or ALD-type processing is described. In an example, a method of fabricating a group III-nitride film includes flowing a group III precursor, a nitrogen precursor, and a p-type dopant precursor into a reaction chamber having a substrate therein. A p-type doped group III-nitride layer is formed in the reaction chamber, above the substrate, while a total pressure in the reaction chamber is approximately in the range of 300-760 Torr.

Abstract: Integrated wafer or substrate bow measurement modules are described. For example, a multi-chamber system includes a chamber housing a bow measurement module. In another example, a method of pre-screening a wafer includes inserting a wafer or a substrate into a multi-chamber system. A bow parameter of the wafer or the substrate is measured in a bow measurement module housed in a chamber of the multi-chamber system.

Abstract: Methods, semiconductor material stacks and equipment for manufacture of light emitting diodes (LEDs) with improve crystal quality. A growth stopper is deposited between nuclei for a group III-V material, such as GaN, to form a nano mask. The group III-V material is laterally overgrown from a region of the nuclei not covered by the nano mask to form a continuous material layer with reduced dislocation density in preparation for subsequent growth of n-type and p-type layers of the LED. The lateral overgrowth from the nuclei may further recover the surface morphology of the buffer layer despite the presence of the nano mask. Presence of the growth stopper may further result in void formation on a substrate side of an LED stack to improve light extraction efficiency.

Abstract: Substrate carrier having multiple emissivity coefficients for thin film processing and more particularly for support of a substrate during a deposition process epitaxially growing a film on the substrate. A front side of the carrier has a first carrier surface upon which the substrate is to be disposed, the first carrier surface having a first emissivity coefficient different than a second emissivity coefficient of a second carrier surface adjacent to the first carrier surface. Selection of the second emissivity coefficient independent of the first emissivity coefficient may modify an amount of energy radiated from the second carrier surface during processing of the substrate. In one embodiment, the second carrier surface has a second emissivity coefficient which is lower than the first emissivity coefficient to reduce heat loss from the carrier surface while maintaining high efficiency energy transfer between the carrier and a substrate.

Abstract: Apparatus and method for control of epitaxial growth temperatures during manufacture of light emitting diodes (LEDs). Embodiments include measurement of a substrate and/or carrier temperature during a recipe stabilization period; determination of a temperature drift based on the measurement; and modification of a growth temperature based on a temperature offset determined in response to the temperature drift exceeding a threshold criteria. In an embodiment, a statistic derived from a plurality of pyrometric measurements made during the recipe stabilization over several runs is employed to offset each of a set of growth temperatures utilized to form a multiple quantum well (MQW) structure.

Abstract: Apparatus and systems are disclosed for processing a substrate. In an embodiment, a system includes a processing chamber, which includes a substrate support to support the substrate. The chamber further includes a plate member positioned below the substrate support and designed to improve heating efficiency within the processing chamber. The processing chamber further includes a lower dome positioned below the plate member. The plate member is designed to prevent a coating from being deposited on the lower dome during processing conditions. The plate member is designed to prevent particles and debris from falling below the plate member. The plate member is designed to improve heating uniformity between the plate member and the substrate within the processing chamber.

Abstract: Embodiments of the present invention provide methods and apparatus for surface coatings applied to process chamber components utilized in chemical vapor deposition processes. In one embodiment, the apparatus provides a showerhead apparatus comprising a body, a plurality of conduits extending through the body, each of the plurality of conduits having an opening extending to a processing surface of the body, and a coating disposed on the processing surface, the coating being about 50 microns to about 200 microns thick and comprising a coefficient of emissivity of about 0.8, an average surface roughness of about 180 micro-inches to about 220 micro-inches, and a porosity of about 15% or less.

Abstract: Methods and systems for the fabrication of p-GaN, and related, films utilizing a dedicated chamber in a multi-chamber tool are described. Also described are methods of fabricating a magnesium doped group III-V material layer, such as a GaN layer, with a sharp magnesium decay profile.

Abstract: Embodiments disclosed herein generally relate to an HVPE chamber. The chamber may have one or more precursor sources coupled thereto. For example, a gallium source and a separate aluminum source may be coupled to the processing chamber to permit gallium nitride and aluminum nitride to be separately deposited onto a substrate in the same processing chamber. The nitrogen may be introduced to the processing chamber at a separate location from the precursors and at a lower temperature. The chamber has a truncated box shape formed by a curved cover which improves the flow of the nitrogen and precursor gases and the uniformity of the film deposition.

Abstract: Embodiments of the invention generally relate to apparatus and methods for cleaning chamber components using a cleaning plate. The cleaning plate is adapted to be positioned on a substrate support during a cleaning process, and includes a plurality of turbulence-inducing structures. The turbulence-inducing structures induce a turbulent flow of cleaning gas while the cleaning plate is rotated during a cleaning process. The cleaning plate increases the retention time of the cleaning gas near the showerhead during cleaning. Additionally, the cleaning plate reduces concentration gradients within the cleaning plate to provide a more effective clean. The method includes positioning a cleaning plate adjacent to a showerhead, and introducing cleaning gas to the space between the showerhead and the cleaning plate. A material deposited on the surface of the showerhead is then heated and vaporized in the presence of the cleaning gas, and then exhausted from the processing chamber.

Abstract: In one embodiment a method is provided for maintaining a substrate processing surface. The method generally includes performing a set of measurements on the substrate processing surface, wherein the set of measurements are taken using a displacement sensor coupled to a processing surface conditioning arm, determining a processing surface profile based on the set of measurements, comparing the processing surface profile to a minimum profile threshold, and communicating a result of the profile comparison.

Abstract: Systems for scribing a workpiece incorporate a motorized beam expander to change a laser beam spot size incident on a workpiece. A system includes a frame, a laser coupled with the frame and generating an output to remove material from at least a portion of a workpiece, a beam expander positioned along a path of the laser output and having a motorized mechanism operable to vary a beam expansion ratio applied to the laser output, and at least one scanning device coupled with the frame and operable to control a position of the laser output, after expansion, on the workpiece. The motorized beam expander can be used to selectively vary the width of a laser beam supplied to a scanning device so as to selectively vary the size of the laser beam incident on the workpiece. Alternatively, a variable aperture can be used instead of a beam expander.

Abstract: A method and apparatus for extending a polishing article lifetime on a polishing tool with multiple platens is described. The apparatus includes an advanceable roll to roll platen with multiple embodiments of a polishing article to be used thereon. The polishing article is adapted to perform a polishing process by removing conductive and dielectric material from a substrate while minimizing downtime of the polishing tool. In some embodiments, the polishing article may be a dielectric material or a conductive material and is configured to include a longer usable lifetime to minimize replacement and downtime of the tool.

Abstract: In-line metrology methods and systems for use with laser-scribing systems used in solar-cell fabrication are disclosed. Such methods and systems can involve a variety of components, for example, a device for measuring the amount of power input to a laser, a power meter for measuring laser output power, a beam viewer for measuring aspects of a laser beam, a height sensor for measuring a workpiece height, a microscope for measuring workpiece features formed by the laser-scribing system, and a system for monitoring a laser-scribing system and annunciating a warning(s) and/or an error message(s) when operational limits are exceeded. In-line metrology methods can also include the processing of output beam reflections so as to track beam drift over time and/or provide for focusing of an imaging device.

Abstract: Apparatus and methods adapted to polish an edge of a substrate include a polishing film, a frame adapted to tension and load the polishing film so that at least a portion of the film is supported in a plane, and a substrate rotation driver adapted to rotate a substrate against the plane of the polishing film such that the polishing film is adapted to apply force to the substrate, contour to an edge of the substrate, the edge including at least an outer edge and a first bevel, and polish the outer edge and the first bevel as the substrate is rotated. Numerous other aspects are provided.

Abstract: Multi-wavelength laser-scribing systems are disclosed. A system for scribing a workpiece includes a frame, a translation stage coupled with the frame to support the workpiece and translate the supported workpiece relative to the frame in a longitudinal direction, at least one laser operable to generate a first output having a first wavelength and generate a second output having a second wavelength, and at least one scanning device coupled with the frame and operable to control a position of the first and second outputs. Each of the first and second outputs are able to remove material from at least a portion of the workpiece. Laser assemblies that each include a laser and at least one scanning device can be arranged in rows to enhance the rate at which latitudinal scribe lines are formed.

Abstract: Laser systems for laser scribing are provided. The systems include a remote module coupled to a laser module through a cable. The remote module includes a controller and a chiller. The laser module has at least a laser source and a cooling plate. The laser module is operable to remove material from at least a portion of a workpiece. The systems also include a plurality of termination modules coupled to the laser module through a plurality of optical fibers. Each of the termination modules includes a mechanical interface. The mechanical interface is coupled to a respective optical fiber. The systems further include a plurality of scanning devices operable to control a position of the output from the laser. Each of the scanning devices is coupled to a respective mechanical interface.