Abstract: A display substrate includes a base, a middle frame below the base and a pressure sensor for sensing a touch operation to generate a touch signal. The pressure sensor includes multiple sensing units, each having a first electrode on the base that deforms in response to the sensed touch pressure; a second electrode between the middle frame and the base that forms a capacitor with the first electrode, the capacitance of the capacitor changing with the deformation of the first electrode; and a sensing circuit electrically connected to the first electrode for transforming changes in the capacitance into electrical signals so as to generate the touch signal.

Abstract: The invention provides a method for forming an alignment film and a liquid crystal display. The method for forming an alignment film includes: providing a substrate, the substrate including a display region and a non-display region, the display region with a plurality of sides, a corner formed by two adjacent sides, the non-display region disposed to surround the display region; disposing a first alignment liquid on the display region of the substrate; disposing a second alignment liquid on the non-display region of the substrate and surrounding corners of the display region; toasting the first alignment liquid and the second alignment liquid to form an alignment film.

Abstract: The invention provides a method for forming an alignment film and a liquid crystal display. The method for forming an alignment film includes: providing a substrate, the substrate including a display region and a non-display region, the display region with a plurality of sides, a corner formed by two adjacent sides, the non-display region disposed to surround the display region; disposing a first alignment liquid on the display region of the substrate; disposing a second alignment liquid on the non-display region of the substrate and surrounding corners of the display region; toasting the first alignment liquid and the second alignment liquid to form an alignment film.

Abstract: A method for liquid crystal alignment is provided, comprising step 1: coating liquid state alignment film material containing paramagnetic chain-like particles on a display region of a substrate; step 2: placing the substrate in a constant magnetic field, so that the paramagnetic chain-like particles are stably arranged in a direction of the magnetic field; step 3: removing the magnetic field; and step 4: adding liquid crystal material into the display region of the substrate, so that molecules of the liquid crystal material align in the orientation of the paramagnetic chain-like particles. According to the method of the present disclosure, the use of rubbing cloth can be avoided, and non-contact liquid crystal alignment can be realized.

Abstract: A method of manufacturing a photovoltaic structure includes forming a p-type semiconductor absorber layer containing a copper indium gallium selenide based material over a first electrode, forming a n-type cadmium sulfide layer over the p-type semiconductor absorber layer by sputtering in an ambient including hydrogen gas and oxygen gas, and forming a second electrode over the cadmium sulfide layer.

Abstract: Methods and systems are provided herein for measuring 3D apparatus (e.g., manual tool or tool accessory) orientation. Example implementations use an auto-nulling algorithm that incorporates a quaternion-based unscented Kalman filter. Example implementations use a miniature inertial measurement unit endowed with a tri-axis gyro and a tri-axis accelerometer. The auto-nulling algorithm serves as an in-line calibration procedure to compensate for the gyro drift, which has been verified to significantly improve the estimation accuracy in three-dimensions, especially in the heading estimation.

Abstract: Methods for removing photoresist from a semiconductor substrate are provided. In accordance with an exemplary embodiment of the invention, a method for removing a photoresist from a semiconductor substrate comprises the steps of exposing the semiconductor substrate and the photoresist to a first plasma formed from oxygen, forming an oxide layer on exposed regions of the semiconductor substrate, and subjecting the photoresist to a second plasma formed from oxygen and a fluorine-comprising gas, wherein the first plasma is not the second plasma.

Abstract: High density plasma chemical vapor deposition and etch back processes fill high aspect ratio gaps without liner erosion or further underlying structure attack. The characteristics of the deposition process are modulated such that the deposition component of the process initially dominates the sputter component of the process. For example, reactive gasses are introduced in a gradient fashion into the HDP reactor and introduction of bias power onto the substrate is delayed and gradually increased or reactor pressure is decreased. In the case of a multi-step etch enhanced gap fill process, the invention may involve gradually modulating deposition and etch components during transitions between process steps. By carefully controlling the transitions between process steps, including the introduction of reactive species into the HDP reactor and the application of source and bias power onto the substrate, structure erosion is prevented.

Abstract: Chemical vapor deposition processes are employed to fill high aspect ratio (typically at least 3:1), narrow width (typically 1.5 microns or less and even sub 0.15 micron) gaps with significantly reduced incidence of voids or weak spots. This deposition process involves the use of hydrogen as a process gas in the reactive mixture of a plasma containing CVD reactor. The process gas also includes dielectric forming precursor molecules such as silicon and oxygen containing molecules.

Abstract: Chemical vapor deposition processes are employed to fill high aspect ratio (typically at least 3:1), narrow width (typically 1.5 microns or less and even sub 0.15 micron) gaps with significantly reduced incidence of voids or weak spots. This deposition process involves the use of hydrogen as a process gas in the reactive mixture of a plasma containing CVD reactor. The process gas also includes dielectric forming precursor molecules such as silicon and oxygen containing molecules.

Abstract: Chemical vapor deposition processes are employed to fill high aspect ratio (typically at least 3:1), narrow width (typically 1.5 microns or less and even sub 0.15 micron) gaps with significantly reduced incidence of voids or weak spots. This deposition process involves the use of hydrogen as a process gas in the reactive mixture of a plasma containing CVD reactor. The process gas also includes dielectric forming precursor molecules such as silicon and oxygen containing molecules.