Abstract: A gate driving signal detection circuit, a method, and a display device are provided, the gate driving signal detection circuit includes a switch sub-circuit and a test signal line, during a blank time period and an interval time period, the switch sub-circuit controls writing of a clock signal output by a clock signal line into the test signal line; during a output time period of each stage of gate driving signal, when a potential of the gate driving signal is an effective level, the switch sub-circuit controls to establish a connection between a corresponding gate driving signal output terminal and the test signal line, when the potential of the gate driving signal is an ineffective level, the switch sub-circuit controls to disconnect the connection between the corresponding gate driving signal output terminal and the test signal line.

Abstract: A voltage control circuit and a method of controlling the same, and a display device are provided. The comparison sub-circuit is coupled to a first reference voltage end, a second reference voltage end, a feedback voltage end and a comparison output end which is coupled to the switching sub-circuit. The switching sub-circuit is further coupled to an output voltage end, an initial voltage end and a replacement voltage end. The comparison sub-circuit determines whether a voltage of the feedback voltage end is between the first reference voltage and the second reference voltage. The switching sub-circuit transmits a voltage of the initial voltage end to the output voltage end in response to a first control signal of the comparison output end; transmit a voltage of the replacement voltage end to the output voltage end in response to a second control signal of the comparison output end.

Abstract: The present disclosure relates to display technologies, and particularly to a clock signal auxiliary circuit and a display device. The circuit can include a voltage detection circuit, a thermal sensitive sensing circuit, a control circuit, a switch selection circuit, and a signal amplification circuit. The clock signal auxiliary circuit can generate different detection signals according to different ambient temperatures during operation, and generate different control signals according to different detection signals, so as to turn on different channels according to different control signals, pull the clock signal that is finally output to the output end up to the correct potential, and generate correct scan signals at different ambient temperatures according to the clock signal pulled up to the correct potential.

Abstract: The present disclosure relates to display technologies, and particularly to a clock signal auxiliary circuit and a display device. The circuit can include a voltage detection circuit, a thermal sensitive sensing circuit, a control circuit, a switch selection circuit, and a signal amplification circuit. The clock signal auxiliary circuit can generate different detection signals according to different ambient temperatures during operation, and generate different control signals according to different detection signals, so as to turn on different channels according to different control signals, pull the clock signal that is finally output to the output end up to the correct potential, and generate correct scan signals at different ambient temperatures according to the clock signal pulled up to the correct potential.

Abstract: A linearity compensation circuit is disclosed for improving the linearity of a sensing signal. The linearity compensation circuit may include a compensator that is capable of receiving a sensing signal from a sensor and generating a compensation signal based on the sensing signal. The linearity compensation circuit may also include an output circuit that is capable of combining the compensation signal and the sensing signal to generate a compensated signal that exhibits an improved linearity. Also disclosed is a sensing apparatus which includes a sensor and the linearity compensation circuit. The sensing apparatus may thus be able to generate a sensing signal that is linear over a wider dynamic range.

Abstract: An image sensor includes a unit cell having a plurality of pixels; the unit cell comprising an amplifier input transistor that is shared by the plurality of pixels; a plurality of floating diffusions that are joined by a floating diffusion interconnect layer and are connected to the amplifier input transistor; and an interconnect layer which forms an output signal wire which shields the floating diffusion interconnect layer.

Abstract: An image sensor includes a photosensitive region that accumulates charge corresponding to received incident light; a transfer gate for transferring charge from the photosensitive region; a voltage supply having an increasing voltage over time; a floating diffusion for receiving the charge from the photosensitive region and converting the charge to a voltage; an amplifier for receiving and amplifying a signal from the floating diffusion; a comparator for comparing a voltage from the amplifier to a reference voltage; and a counter for counting clock cycles between initiation of the increasing voltage until a signal is received from the comparator indicating charge transfer from the photosensitive region to the floating diffusion; wherein a digital signal is generated that represents an unfilled capacity of the photosensitive region.

Abstract: An image sensor includes a plurality of pixels for capturing an image; a sample and hold circuit array having a plurality of units for receiving signals from the plurality of pixels representing the captured image; a decoder for selecting each of the units of the sample and hold circuit array for output; and a delay circuit that includes an adjustable time delay to the decoder for compensating for time delays.

Abstract: A CMOS image sensor includes a plurality of pixels arranged in an array; a plurality of sample and hold arrays; and a routing matrix which routes a signal from each pixel to one of the sample and hold arrays in a predetermined order.

Abstract: A CMOS image sensor includes a photodiode for receiving incident light that is converted to a charge signal; a transfer mechanism for transferring the charge to a sensing node that converts the charge signal to an image voltage signal; and a sample-and-hold circuit. The sample-and-hold circuit includes a capacitor that receives the image voltage signal; and only one buffer amplifier that passes the image voltage signal to a differential amplifier. The buffer amplifier also receives a reset signal that is passed to the differential amplifier.

Abstract: An active pixel image sensor comprising: (a) a pixel array having a plurality of pixels, each pixel comprising: (i) a photosensitive region connected to a charge-to-voltage conversion region; and (ii) an amplifier connected to the charge-to-voltage conversion region; and (b) a sample and hold circuit connected to one or more pixels comprising: (i) two capacitors for receiving and storing a reset signal and an image signal; (ii) two buffer amplifiers for respectively receiving the reset signal and the image signal respectively from the two capacitors; and (iii) a reference generator circuit connected to an input of the buffer amplifiers for removing offset of the buffer amplifier.

Abstract: A CMOS image sensor includes a photosensitive region for collecting charge in response to incident light; a charge-to-voltage mechanism for receiving the charge from the photosensitive region and converting the charge to a voltage; an amplifier for receiving and amplifying the voltage; a sample and hold circuit includes (i) a first capacitor one for receiving the voltage and a second capacitor for receiving a reset level; a first bus for receiving the voltage from the first capacitor and a second bus for receiving the reset level from the second capacitor; a differential difference amplifier for receiving the image voltage and the reset level and for determining a difference level between the image voltage and the reset level and for removing offset of the amplifier; and first and second switches respectively connected to the first and second bus for providing an electrical path for removing charge from each bus.

Abstract: An image sensor includes a plurality of pixels for capturing incident light that is converted to a signal representing an image; wherein noise is combined with a signal representing both the image and a reset level; a plurality of dark reference pixels that generate noise that substantially correspond or equally correspond to the noise in the image and reset level; and a sample and hold circuit that reads out the image signal and cancels or substantially cancels out the noise from the image signal and reset level by canceling the noise from image and reset level with the noise generated from the dark reference pixels.

Abstract: An image sensor includes a photosensitive region that accumulates charge corresponding to received incident light; a transfer gate for transferring all or a portion of the charge from the photosensitive region; a voltage supply having an increasing voltage over time that is applied to the transfer gate; a floating diffusion for receiving the all or a portion of the charge from the photosensitive region and converting the charge to a voltage; an amplifier for receiving and amplifying a signal from the floating diffusion; a pulse detector for detecting a voltage pulse from the amplifier; and a counter for counting clock cycles between initiation of the increasing voltage until a signal is received from the detector which indicates initiation of charge transfer from the photosensitive region to the floating diffusion.

Abstract: An image sensor includes a photosensitive region that accumulates charge corresponding to received incident light; a transfer gate for transferring all or a portion of the charge from the photosensitive region; a voltage supply having an increasing voltage over time that is applied to the transfer gate; a floating diffusion for receiving the all or a portion of the charge from the photosensitive region and converting the charge to a voltage; an amplifier for receiving and amplifying a signal from the floating diffusion; a pulse detector for detecting a voltage pulse from the amplifier; and a counter for counting clock cycles between initiation of the increasing voltage until a signal is received from the detector which indicates initiation of charge transfer from the photosensitive region to the floating diffusion.

Abstract: An image sensor includes a plurality of pixels for capturing an image; a sample and hold circuit array having a plurality of units for receiving signals from the plurality of pixels representing the captured image; a decoder for selecting each of the units of the sample and hold circuit array for output; and a delay circuit that includes an adjustable time delay to the decoder for compensating for time delays.

Abstract: An image sensor includes a photosensitive region that accumulates charge corresponding to received incident light; a transfer gate for transferring charge from the photosensitive region; a voltage supply having an increasing voltage over time; a floating diffusion for receiving the charge from the photosensitive region and converting the charge to a voltage; an amplifier for receiving and amplifying a signal from the floating diffusion; a comparator for comparing a voltage from the amplifier to a reference voltage; and a counter for counting clock cycles between initiation of the increasing voltage until a signal is received from the comparator indicating charge transfer from the photosensitive region to the floating diffusion; wherein a digital signal is generated that represents an unfilled capacity of the photosensitive region.

Abstract: A method of making an image sensor, the method includes the steps of providing a plurality of pixels each with a photodetector; providing an amplifier that is shared between the plurality of photodetectors; providing a transfer gate associated with each photodetector; providing a charge-to-voltage conversion region that is shared between the plurality of photodetectors; determining a capacitance between each transfer gate and the charge-to-voltage conversion region; and modifying the capacitance to be substantially the same by altering a physical structure within one or more pixels.

Abstract: A CMOS image sensor includes a plurality of pixels arranged in an array; a plurality of sample and hold arrays; and a routing matrix which routes a signal from each pixel to one of the sample and hold arrays in a predetermined order.

Abstract: A method of making an image sensor, the method includes the steps of providing a plurality of pixels each with a photodetector; providing an amplifier that is shared between the plurality of photodetectors; providing a transfer gate associated with each photodetector; providing a charge-to-voltage conversion region that is shared between the plurality of photodetectors; determining a capacitance between each transfer gate and the charge-to-voltage conversion region; and modifying the capacitance to be substantially the same by altering a physical structure within one or more pixels.