Abstract: It is an object of the present invention to reduce noise in a detection circuit for use in a sensor system. According to an aspect of the present invention, provided is a high-sensitivity sensor system which includes an acceleration sensor, a detection circuit system that detects an output of the acceleration sensor, a feedback circuit system including a reference voltage power source that generates a feedback signal to be fed back to the acceleration sensor based on an output of the detection circuit system, and a correction circuit system.

Abstract: A method for forming a FinFET device structure is provided. The method for forming a FinFET device structure includes forming a fin structure over a substrate and forming a gate structure across the fin structure. The method for forming a FinFET device structure also includes forming a first spacer over a sidewall of the gate structure and forming a second spacer over the first spacer. The method for forming a FinFET device structure further includes etching the second spacer to form a gap and forming a mask layer over the gate structure and the first spacer after the gap is formed. In addition, the mask layer extends into the gap in such a way that the mask layer and the fin structure are separated by an air gap in the gap.

Abstract: A charged particle beam system includes a charged particle beam device 101 and the detection circuit 114. The charged particle beam device 101 includes a first antenna 102 having a first resonant frequency and a second antenna 103 having a second resonant frequency. The detection circuit 114 includes a first amplitude detection unit 110 which detects a first amplitude of a signal after passing a first filter 107, a second amplitude detection unit 111 which detects a second amplitude of a signal after passing a second filter 108, and an amplitude comparison unit 113 which compares the first amplitude with the second amplitude.

Abstract: A method of fabricating an integrated circuit (IC) uses a first lithography technique having a first resolution and a second lithography technique having a second resolution lower than the first resolution. The method includes deriving a graph from an IC layout, the graph having vertices and edges that connect some of the vertices, the vertices representing IC patterns in the IC layout, the edges representing spacing between the IC patterns that are smaller than the second resolution. The method further includes classifying the edges into at least two types, a first type of edges representing spacing that is smaller than the first resolution, a second type of edges representing spacing that is equal to or greater than the first resolution but smaller than the second resolution.

Abstract: The present disclosure provides processes for polymerizing olefin(s). Methods can include contacting a first composition and a second composition in a line to form a third composition. The first composition can include a contact product of a first catalyst, a second catalyst, a support, a first activator, a mineral oil. The second composition can include a contact product of an activator, a diluent, and the first catalyst or the second catalyst. Methods can include introducing the third composition from the line into a gas-phase fluidized bed reactor, introducing a condensing agent to the line and/or the reactor, exposing the third composition to polymerization conditions, and/or obtaining a polyolefin. Polyethylene compositions including at least 65 wt % ethylene derived units, based upon the total weight of the polyethylene composition, are provided.

Abstract: Methods and formulations for modified silicone resins of Formula (I) are presented: The R1, R2, and R3 are each independently selected from a group consisting of H, alkyl, alkenyl, alkynyl, and aryl; n ranges from 1 to 10; m ranges from 1 to 200; and p ranges from 2 to 1,000. The elastomeric materials prepared from modified silicone resins display robust mechanical properties following prolonged exposure to high temperatures (e.g., 316° C. or higher).

Abstract: A method of forming a finished film comprising extruding a molten polyethylene comprising a diene terpolymer modifier through a die opening to form a film, wherein the diene-terpolymer modifier is a terpolymer comprising ethylene-derived units, C3 to C10 ?-olefin derived units, and diene-derived units; causing the film to progress in a direction away from the die opening; cooling the film at a distance from the die opening, the distance adjusted to allow relaxation of the molten polyethylene prior to solidification and/or crystallization upon cooling; and isolating a finished film therefrom. Desirably, the polyethylene is a linear low density polyethylene, and the die and cooling is suitable for forming a blown film.

Abstract: A method of forming a blown film comprising extruding a molten composition through a die opening to form a film; wherein the molten composition comprises at least one polyethylene and within the range from 0.10 wt % to 10 wt % of a cyclic-diene terpolymer by weight of the composition; causing the film to progress in a direction away from the die opening; cooling the film at a distance from the die opening, the distance adjusted to effect the properties of the film; and isolating a blown film therefrom.

Abstract: Implementations of the present disclosure provide coloring methods that sort and pre-color nodes of G0-linked networks in a multiple-patterning technology (MPT)-compliant layout design by coordinate. In one embodiment, a method includes identifying target networks in a circuit layout, each target network having two or more linked nodes representing circuit patterns, and each target network being presented in an imaginary X-Y coordinate plane, assigning a first feature to a first node in each target network, the first node is determined using a coordinate-based method, and assigning the first feature and a second feature to remaining nodes in each target network in an alternating manner so that any two immediately adjacent linked nodes in each target network have different features.

Abstract: A charged particle apparatus including a charged particle source unit; a blanking electrode unit that blanks a charged particle beam launched from the charged particle source unit; a deflecting electrode unit that deflects the charged particle beam; an objective lens unit that converges the charged particle beam deflected by the deflecting electrode unit and radiates the charged particle beam to a surface of a sample; a secondary charged particle detection unit that detects a secondary charged particle generated from the sample; a signal processing unit that processes a signal obtained by detecting the secondary charged particle; and a control unit that corrects a transient signal when the blanking of the charged particle beam is turned off by the blanking electrode, such that an image with no distortion can be obtained even when the blanking electrode is operated to turn on and off at a high speed.

Abstract: Provided is a semiconductor device including a first fin-type field effect transistor (FinFET). The first FinFET includes a first gate structure over a first semiconductor fin and the first gate structure includes a first work function layer. The first work function layer includes a first layer and a second layer. The first layer has a bar-shaped structure, the second layer has a U-shaped structure encapsulating sidewalls and a bottom surface of the first layer, and the first layer and the second layer include different materials. A method of manufacturing the semiconductor device is also provided.

Abstract: An electrochemical device is disclosed. The electrochemical device includes a first transparent conductive layer, an electrochromic layer overlying the first transparent conductive layer, a counter electrode layer overlying the electrochromic layer, a second transparent conductive layer, and a switching speed parameter of not greater than 0.68 s/mm at 23° C.

Abstract: A charged particle beam device includes a deflection unit that deflects a charged particle beam released from a charged particle source to irradiate a sample, a reflection plate that reflects secondary electrons generated from the sample, and a control unit that controls the deflection unit based on an image generated by detecting the secondary electrons reflected from the reflection plate. The deflection unit includes an electromagnetic deflection unit that electromagnetically scans with the charged particle beam by a magnetic field and an electrostatic deflection unit that electrostatically scans with the charged particle beam by an electric field. The control unit controls the electromagnetic deflection unit and the electrostatic deflection unit, superimposes an electromagnetic deflection vector generated by the electromagnetic scanning and an electrostatic deflection vector generated by the electrostatic scanning, and controls at least a trajectory of the charged particle beam.

Abstract: Apparatuses and methods for pipelining memory operations with error correction coding are disclosed. A method for pipelining consecutive write mask operations is disclosed wherein a second read operation of a second write mask operation occurs during error correction code calculation of a first write mask operation. The method may further including writing data from the first write mask operation during the error correction code calculation of the second write mask operation. A method for pipelining consecutive operations is disclosed where a first read operation may be cancelled if the first operation is not a write mask operation. An apparatus including a memory having separate global read and write input-output lines is disclosed.

Abstract: Even in a case where a disturbance is applied from an adjacently disposed power supply circuit or the like, in order to realize a reduction in ripple, a high-voltage power supply device is configured to include a drive circuit, a transformer that boosts an output voltage of the drive circuit, a boost circuit that further boosts a voltage boosted by the transformer, a shield that covers the transformer and the boost circuit, a filter circuit that filters, smoothes, and outputs a high voltage output from the boost circuit, and an impedance loop circuit configured by connection of a plurality of impedance elements into a loop shape. A grounding point of the boost circuit, a grounding point of the shield, and a grounding point of the filter circuit are configured to be grounded via the impedance loop circuit, and this is applied to a high-voltage power supply unit that applies a high voltage to an electron gun of a charged particle beam apparatus.

Abstract: A charged-particle beam system comprises: a charged-particle beam device containing a detection unit for detecting electrons generated by irradiating a sample with a charged-particle beam released from a charged particle source; and a signal detection unit in which a detection signal from the detection unit is input through a wiring. The signal detection unit comprises: a separation unit for separating into a rising signal and a falling signal the detection signal from the detection unit; a falling signal processing unit for at least eliminating ringing in the falling signal; and a combination unit generating and delivering a combined signal produced by combining the rising signal, which has been separated by the separation unit, with the falling signal wherefrom the ringing has been eliminated by the falling signal processing unit.

Abstract: A pressure sensor system is provided. In another aspect, a wireless intraocular pressure sensor includes a deformable or stretchable inductor. A further aspect of an intraocular pressure sensing system includes a deformable inductor sized to contact an eye. Another aspect provides an organ pressure sending system including a passive inductor with a wavy, serpentine or undulating shape.

Abstract: FinFET structures and methods of forming the same are disclosed. A device includes a semiconductor fin. A gate stack is on the semiconductor fin. The gate stack includes a gate dielectric on the semiconductor fin and a gate electrode on the gate dielectric. The gate electrode and the gate dielectric have top surfaces level with one another. A first inter-layer dielectric (ILD) is adjacent the gate stack over the semiconductor fin. The first ILD exerts a compressive strain on the gate stack.

Abstract: Multi-inheritance within a single-inheritance, container-based data processing environment is provided for facilitating developing, storing, shipping and/or running software applications. More particularly, a facility is provided which includes generating, based on a configuration file with a multi-inheritance instruction, a composited image for a new container from multiple exiting images of the single-inheritance container-based environment. The multiple existing images are identified in the multi-inheritance instruction, and the generating includes creating a composited directory file which, in part, references layers of the multiple existing images and associating a command instruction of the configuration file with the composited file. The composited image is then built in associated with starting the new container based on the composited directory file and the associated command.

Abstract: Multi-inheritance within a single-inheritance, container-based data processing environment is provided for facilitating developing, storing, shipping and/or running software applications. More particularly, a facility is provided which includes generating, based on a configuration file with a multi-inheritance instruction, a composited image for a new container from multiple exiting images of the single-inheritance container-based environment. The multiple existing images are identified in the multi-inheritance instruction, and the generating includes creating a composited directory file which, in part, references layers of the multiple existing images and associating a command instruction of the configuration file with the composited file. The composited image is then built in associated with starting the new container based on the composited directory file and the associated command.