Patents by Inventor Wen-Chen Lin

Wen-Chen Lin has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20060111638
    Abstract: The invention is related to a noninvasive pulse measurement system with constant pressure for extremities of a human, and the constant pressure is modulated among 30 to 120 mmHg. There are an auto-mode and a manual mode for measurement algorithm. The auto-mode completes measurement and recording processes automatically during 2 minutes and pressurizes the system from low pressure (30 mmHg) to high pressure (120 mmHg) with 10 mmHg gradient every 5 seconds while the manual mode completes measurement and recording processes during a long time under a user's setting. Moreover, by a post-treatment of the system, the system is able to obtain continuous pulse signals, continuous pulse differential signals, and continuous pulse integral signals that are useful for Chinese medicine to evaluate and monitor the user's cardio-physiology and circulatory system.
    Type: Application
    Filed: May 11, 2005
    Publication date: May 25, 2006
    Applicant: Hen-Hong Chang
    Inventors: Hen-Hong Chang, Kang-Ping Lin, Wen-Chen Lin
  • Patent number: 6595032
    Abstract: A lock cylinder-free lock device is constructed to include a casing, a locating block fixedly covered on a top side of the casing, the locating block having a plurality of vertical pinholes, a locking block moved in the casing between the locking position and the unlocking position, the locking block having spring-supported pins respectively extended out of a stepped top sidewall thereof and adapted for engaging into the pinholes of the locating block when the locking block moved to the locking position, and a key adapted for unlocking the locking block, the key having bottom pins of different lengths adapted for inserting into the pinholes of the locating block to disengage the spring-supported pins the locating block.
    Type: Grant
    Filed: November 1, 2001
    Date of Patent: July 22, 2003
    Inventor: Wen-Chen Lin
  • Publication number: 20030079510
    Abstract: A lock cylinder-free lock device is constructed to include a casing, a locating block fixedly covered on a top side of the casing, the locating block having a plurality of vertical pinholes, a locking block moved in the casing between the locking position and the unlocking position, the locking block having spring-supported pins respectively extended out of a stepped top sidewall thereof and adapted for engaging into the pinholes of the locating block when the locking block moved to the locking position, and a key adapted for unlocking the locking block, the key having bottom pins of different lengths adapted for inserting into the pinholes of the locating block to disengage the spring-supported pins the locating block.
    Type: Application
    Filed: November 1, 2001
    Publication date: May 1, 2003
    Inventor: Wen-Chen Lin
  • Patent number: 5858846
    Abstract: A method for preventing gate to source/drain bridging and reducing junction leakage by preventing defects in the source/drain region in the fabrication of a silicided polysilicon gate is described. A polysilicon gate electrode on a semiconductor substrate and associated source and drain regions within the semiconductor substrate are provided wherein spacers are formed on the sidewalls of the gate electrode. A layer of titanium is deposited over the gate electrode, spacers and source and drain regions within the semiconductor substrate. Arsenic ions are implanted into the titanium layer. The semiconductor substrate is annealed for a first time whereby the titanium layer is transformed into a titanium silicide layer except where the titanium layer overlies the spacers. The titanium layer overlying the spacers is stripped to leave the titanium silicide layer only on the top surface of the gate electrode and on the top surface of the semiconductor substrate overlying the source and drain regions.
    Type: Grant
    Filed: August 4, 1997
    Date of Patent: January 12, 1999
    Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Chao-Chieh Tsai, Wen-Chen Lin, Liang Szuma