Abstract: The present disclosure relates to semiconductor structures and, more particularly, to an ultra-high voltage resistor and methods of manufacture. The structure includes at least one resistor coupled to a well of a doped substrate, the at least one resistor being separated vertically from the well by an isolation region with one end of the resistor being attached to an input pad and another end coupled to circuitry.

Abstract: The present disclosure relates to semiconductor structures and, more particularly, to an ultra-high voltage resistor and methods of manufacture. The structure includes at least one resistor coupled to a well of a doped substrate, the at least one resistor being separated vertically from the well by an isolation region with one end of the resistor being attached to an input pad and another end coupled to circuitry.

Abstract: A device and a method for forming a device are disclosed. The device includes a substrate with a high voltage (HV) device region. The HV device region is defined with first and second device isolation regions and an internal dielectric region which are shallow trench isolation (STI) regions. A HV transistor is disposed in the HV device region. The HV transistor includes a gate dielectric layer on the substrate, a gate disposed on the gate dielectric layer, and a source region disposed in the substrate adjacent to the gate and first device isolation region while a drain region disposed in the substrate adjacent to the second device isolation region. A drift well and a body well are disposed in the substrate. At least one buried RESURF region is disposed under the internal dielectric region.

Abstract: A device and a method for forming a device are disclosed. The device includes a substrate with a high voltage (HV) device region. The HV device region is defined with first and second device isolation regions and an internal dielectric region which are shallow trench isolation (STI) regions. A HV transistor is disposed in the HV device region. The HV transistor includes a gate dielectric layer on the substrate, a gate disposed on the gate dielectric layer, and a source region disposed in the substrate adjacent to the gate and first device isolation region while a drain region disposed in the substrate adjacent to the second device isolation region. A drift well and a body well are disposed in the substrate. At least one buried RESURF region is disposed under the internal dielectric region.

Abstract: A semiconductor device is provided. The device includes a semiconductor substrate and a gate structure thereon. A well region is formed in the semiconductor substrate. A drain region and a source region are respectively formed in the semiconductor substrate inside and outside of the well region. At least one set of the first and second heavily doped regions is formed in the well region between the drain region and the source region, wherein the first and second heavily doped regions are stacked vertically from bottom to top and have a doping concentration which is larger than that of the well region. The semiconductor substrate and the first heavily doped region have a first conductivity type and the well region and the second heavily doped region have a second conductivity type. A method for fabricating a semiconductor device is also disclosed.

Abstract: A semiconductor device including a semiconductor substrate of a first conductivity type and an epitaxial structure of the first conductivity type disposed thereon is disclosed. A well region of a second conductivity type is formed in the epitaxial structure and the semiconductor substrate. A drain region and a source region are respectively formed in the epitaxial structure inside and outside of the well region. At least one set of the first and second heavily doped regions is formed in the well region between the drain region and the source region, wherein the first and second heavily doped regions of the first and second conductivity type, respectively, are stacked vertically from bottom to top and have a doping concentration which is larger than that of the well region. A gate structure is disposed on the epitaxial structure. A method for fabricating a semiconductor device is also disclosed.

Abstract: A semiconductor device is provided. The device includes a semiconductor substrate and a gate structure thereon. A well region is formed in the semiconductor substrate. A drain region and a source region are respectively formed in the semiconductor substrate inside and outside of the well region. At least one set of the first and second heavily doped regions is formed in the well region between the drain region and the source region, wherein the first and second heavily doped regions are stacked vertically from bottom to top and have a doping concentration which is larger than that of the well region. The semiconductor substrate and the first heavily doped region have a first conductivity type and the well region and the second heavily doped region have a second conductivity type. A method for fabricating a semiconductor device is also disclosed.

Abstract: A semiconductor device including a semiconductor substrate of a first conductivity type and an epitaxial structure of the first conductivity type disposed thereon is disclosed. A well region of a second conductivity type is formed in the epitaxial structure and the semiconductor substrate. A drain region and a source region are respectively formed in the epitaxial structure inside and outside of the well region. At least one set of the first and second heavily doped regions is formed in the well region between the drain region and the source region, wherein the first and second heavily doped regions of the first and second conductivity type, respectively, are stacked vertically from bottom to top and have a doping concentration which is larger than that of the well region. A gate structure is disposed on the epitaxial structure. A method for fabricating a semiconductor device is also disclosed.

Abstract: A method of preparing conductive gaskets on a chassis includes steps as follows. A chassis is provided. An elastomer is pasted on an inner surface of the chassis. A conductive film is formed to cover both the inner surface of the chassis and the elastomer. The chassis with conductive gaskets, and a method of assembling an electric device including the same are also provided in the invention.

Abstract: An electromagnetic interference preventing module is provided. The module includes a metal pad that is disposed on a circuit board. The metal pad includes a soldering portion and a grounding portion that are connected to each other. At least one fixing lug of a connector is soldered to the soldering portion. At least one protrusion of a grounding housing is in contact with the grounding portion, so as to electrically connect the connector with the grounding housing.

Abstract: A multimedia-messaging-service (MMS) system and the service method thereof are provided. The MMS system integrates the mobility management scheme of a GSM/GPRS/UMTS mobile network and the broadband transmission service of a wireless LAN, and has a user authentication and a location management. The MMS system uses a MMS server to communicate with a wireless LAN, a GSM/GPRS/UMTS mobile network and an Internet for providing the MMS service including user registration, message submission, message forwarding, message notification, message retrieval and location update.

Abstract: An audio circuit board includes a main body, an audio connector, a digital ground loop, an analog ground portion and a moat. The main body includes an edge and a surface. The audio connector is disposed on one side of the main body and includes a fixing portion. The digital ground loop completely surrounds the edge of the main body. The audio connector is connected with the digital ground loop via the fixing portion. The analog ground portion is disposed on the surface of the main body and is disposed adjacent to the digital ground loop. The analog ground portion is separated from the main body via the moat.

Abstract: An electromagnetic interference preventing module is provided. The module includes a metal pad that is disposed on a circuit board. The metal pad includes a soldering portion and a grounding portion that are connected to each other. At least one fixing lug of a connector is soldered to the soldering portion. At least one protrusion of a grounding housing is in contact with the grounding portion, so as to electrically connect the connector with the grounding housing.

Abstract: A KVM switch expansion device includes a box disposed with multiple I/O ports thereon and containing a control component connected to those I/O ports; one or a multiple space is disposed to the box for accommodating expansion module at where other than those I/O ports are provided or the expansion module is separately provided in the form of another box to directly create telecommunication connection with the control component by means of a connection interface for the existing KVM switch to provide new user interface with an expansion module.

Abstract: A multimedia-messaging-service (MMS) system and the service method thereof are provided. The MMS system integrates the mobility management scheme of a GSM/GPRS/UMTS mobile network and the broadband transmission service of a wireless LAN, and has a user authentication and a location management.

Abstract: A laser annealing apparatus is disclosed, which is adapted for a laser annealing process. The laser annealing apparatus comprises a laser-generating module, a resistance-measuring module, and a host circuit module, wherein the laser-generating module provides a laser beam to recrystallize an amorphous silicon thin film to form a polysilicon thin film. The resistance-measuring module is adapted for measuring the sheet resistance of the polysilicon thin film. Besides, the host circuit module is electrically coupled to and between the laser-generating module and the resistance-measuring module. The host circuit module outputs a feedback signal to the laser-generating module in accordance with the sheet resistance value. Then, the energy density of the laser beam is optimized. The laser annealing apparatus can improve the quality of the thin film, and increase the yield rate of the laser annealing process.

Abstract: A method for playing multimedia data on a computer system. The computer system has a central processing unit (CPU) used to control operations of the computer system, a storage device used to retrieve the multimedia data, a bridge circuit electrically connected between the CPU and the storage device for coordinating data transmission between the CPU and the storage device, and an output device. The method includes providing the computer system with a playback controller electrically connected to the storage device and the output device, controlling the storage device to transmit the multimedia data to the playback controller without activating the bridge circuit, utilizing the playback controller to receive and process the multimedia data, and utilizing the playback controller to drive the output device to play the multimedia data.

Abstract: A portable computer comprises a machine body approximately rectangular in shape comprising a front end, a rear end, a top face and a bottom face; a liquid crystal display approximately rectangular in shape comprising an upper end and a lower end; and a connecting device comprising a front end and a rear end. The front end of the connecting device is fixed to the rear end of the machine body in a rotatable manner, and the rear end of the connecting device is fixed to the lower end of the liquid crystal display. The connecting device enables the liquid crystal display to be folded upon the top face of the machine body by a forward rotation or upon the bottom face of the machine body by a backward rotation.

Abstract: A method for testing an interface card used with a computer is provided. The method includes steps of (a) providing the computer with a read-only memorizing device for saving a testing program therein, (b) starting the computer, (c) detecting whether there exists the interface card electrically connected to the computer, (d) causing the computer to change from a first mode to a second mode when the interface card is detected, and (e) executing the testing program to test the interface card.