Abstract: A semiconductor device includes a first region and a second region, and the second region surrounds the first region. The semiconductor device includes at least one electronic unit, a redistribution structure, a plurality of first pads, and a plurality of second pads. The redistribution structure may be electrically connected to at least one electronic unit. A plurality of first pads are arranged on the redistribution structure and correspondingly to the first region. There is a first pitch between two adjacent first pads. A plurality of second pads are arranged on the redistribution structure and correspondingly to the second region. There is a second pitch between two adjacent second pads, so that the first pitch is smaller than the second pitch.

Abstract: In an embodiment, a device includes: a first wafer including a first substrate and a first interconnect structure, a sidewall of the first interconnect structure forming an obtuse angle with a sidewall of the first substrate; and a second wafer bonded to the first wafer, the second wafer including a second substrate and a second interconnect structure, the sidewall of the first substrate being laterally offset from a sidewall of the second substrate and a sidewall of the second interconnect structure.

Abstract: A wireless power transmission device includes a transmission device and a control device. The control device generates a driving signal to the transmission device in a first soft-start period, so as to drive the transmission device. The control device measures an energy message generated by the transmission device to generate a measurement result in a measurement period, and calculates a signal parameter according to the measurement result. The control device accordingly generates a carrier signal according to the signal parameter obtained by the measurement period in a second soft-start period. In a transmission period, the carrier signal is transmitted to the wireless power-receiving device through the transmission device. The energy message is generated by the transmission device in response to a distance between the transmission device and the wireless power-receiving device.

Abstract: A semiconductor device and a semiconductor manufacturing method thereof are provided. The semiconductor manufacturing method includes the following streps. A first semiconductor element with a first bonding film is formed. The first bonding film is formed on a first side of the first semiconductor element. The first semiconductor element and the first bonding film form a taper structure. The first bonding film forms a wide portion of the taper structure. The first semiconductor element forms a narrow portion of the taper structure. A second semiconductor element with a second bonding film is formed. The second bonding film is formed on the second semiconductor element. The first semiconductor element and the second semiconductor element are bonded by bonding the first bonding film and the second bonding film. An oxide layer is filled to surround the first semiconductor element and the first bonding film.

Abstract: This disclosure discloses an optical sensing device. The device includes a carrier body; a first light-emitting device disposed on the carrier body; and a light-receiving device including a group III-V semiconductor material disposed on the carrier body, including a light-receiving surface having an area, wherein the light-receiving device is capable of receiving a first received wavelength having a largest external quantum efficiency so the ratio of the largest external quantum efficiency to the area is ?13.

Abstract: A semiconductor manufacturing method is provided. The semiconductor manufacturing method includes the following steps. A first semiconductor element with a bonding film and a first stressing film is formed. The first bonding film and the first stressing film are formed on two opposite sides of the first semiconductor element. The first stressing film makes the first bonding film to have a first convex surface. A second semiconductor element with a second bonding film is formed. The second bonding film is formed on one side of the second semiconductor element. The first semiconductor element and the second semiconductor element are bonded by bonding the first bonding film and the second bonding film.

Abstract: The disclosure provides an electronic device and a manufacturing method thereof. The electronic device includes a package structure, a circuit structure, a bonding structure and an external element. The circuit structure is disposed on the package structure and is electrically connected to the package structure. The circuit structure has a recess. The bonding structure includes a first bonding pad and a second bonding pad. The second bonding pad is disposed in the recess, and the second bonding pad is disposed on the first bonding pad. The bonding structure is disposed between the circuit structure and the external element. The external element is electrically connected to the circuit structure through the bonding structure. A width of the first bonding pad is smaller than a width of the second bonding pad.

Abstract: A multi-functional sensor assembly includes an electrically non-conductive substrate defining at least a distal region, intermediary region, and proximal region that are each covered with electrically conductive traces. The proximal region is configured to be exposed to a media to be sensed and the distal and intermediary regions are configured to be protected from the media. The electrically conductive traces comprise at least electrical circuits to sense temperature and flow of the media and one or more electrodes to sense one or more of conductivity, oxidation reduction potential (ORP), and acidity (pH) of the media.

Abstract: A display system suitable for a vehicle is provided. The display system suitable for the vehicle includes a center console, a processing device, and a display device. The center console is configured to generate a power sequence according to a customization setting, and the power sequence corresponds to content of a data table. The processing device is configured to receive the power sequence and decodes the power sequence through a lookup table to generate a decoding result. The lookup table includes the content of the data table. The display device is coupled to the processing device and is configured to display a display image according to the decoding result.

Abstract: Provided are a semiconductor device and a method for manufacturing the same, and a semiconductor package. The semiconductor device includes a die stack and a cap substrate. The die stack includes a first die, second dies stacked on the first die, and a third die stacked on the second dies. The first die includes first through semiconductor vias. Each of the second dies include second through semiconductor vias. The third die includes third through semiconductor vias. The cap substrate is disposed on the third die of the die stack. A sum of a thickness of the third die and a thickness of the cap substrate ranges from about 50 ?m to about 80 ?m.

Abstract: Provided is a grease injection system including a plurality of grease injection devices and a host. The grease injection devices uses control information to output lubricating grease, and output a plurality of pieces of status information. The host receives the pieces of status information from the grease injection devices, and generates the control information based on the pieces of status information.

Abstract: A novel additive for recycling thermoset materials, its related recyclable thermoset composition and its application are disclosed. Specifically, the composition of the additive comprises at least one copolymer that has at least one carbamate group, at least one carbonate group and/or at least one urea group, and a number-average molecular weight of the copolymer is between 100 and 50,000 Da.

Abstract: A device package includes a first die directly bonded to a second die at an interface, wherein the interface comprises a conductor-to-conductor bond. The device package further includes an encapsulant surrounding the first die and the second die and a plurality of through vias extending through the encapsulant. The plurality of through vias are disposed adjacent the first die and the second die. The device package further includes a plurality of thermal vias extending through the encapsulant and a redistribution structure electrically connected to the first die, the second die, and the plurality of through vias. The plurality of thermal vias is disposed on a surface of the second die and adjacent the first die.

Abstract: A method includes bonding a first wafer to a second wafer, with a first plurality of dielectric layers in the first wafer and a second plurality of dielectric layers in the second wafer bonded between a first substrate of the first wafer and a second substrate in the second wafer. A first opening is formed in the first substrate, and the first plurality of dielectric layers and the second wafer are etched through the first opening to form a second opening. A metal pad in the second plurality of dielectric layers is exposed to the second opening. A conductive plug is formed extending into the first and the second openings.

Abstract: A method of forming a FinFET is disclosed. The method includes depositing a conductive material across each of a number of adjacent fins, depositing a sacrificial mask over the conductive material, patterning the conductive material with the sacrificial mask to form a plurality of conductive material segments, depositing a sacrificial layer over the sacrificial mask, and patterning the sacrificial layer, where a portion of the patterned sacrificial layer remains over the sacrificial mask, where a portion of the sacrificial mask is exposed, and where the exposed portion of the sacrificial mask extends across each of the adjacent fins. The method also includes removing the portion of the sacrificial layer over the sacrificial mask, after removing the portion of the sacrificial layer over the sacrificial mask, removing the sacrificial mask, epitaxially growing a plurality of source/drain regions from the semiconductor substrate, and electrically connecting the source/drain regions to other devices.

Abstract: An immersion cooling system includes a pressure seal tank, an electronic apparatus, a pressure balance pipe and a relief valve. The pressure seal tank is configured to store coolant. A vapor space is formed in the pressure seal tank above the liquid level of the coolant. The electronic apparatus is completely immersed in the coolant. The pressure balance pipe has a gas collection length. The first port of the pressure balance pipe is disposed on the top surface of the pressure seal tank. The relief valve is disposed on the second port of the pressure balance pipe. The second port is farther away from the top surface of the pressure seal tank than the first port. The gas collection length of the pressure equalization tube allows the concentration of vaporized coolant at the first port to be greater than the concentration of vaporized coolant at the second port.

Abstract: A method of backlight control for a display panel is provided. The display panel is configured to display with a variable refresh rate in a plurality of frame periods each having a fixed period and a variable period. The method includes steps of: generating a first backlight control signal in the fixed period of a frame period; determining whether a liquid crystal (LC) transition time corresponding to the frame period ends before an end time of the variable period of the frame period; generating a second backlight control signal in the variable period of the frame period when the LC transition time ends before the end time of the variable period of the frame period; and generating a compensation backlight control signal in a next frame period according to a backlight duty cycle of the frame period.

Abstract: An electronic wake-up device and a wake-up method thereof are provided. The electronic wake-up device includes: a power switch device, an electronic device, a gravity sensor, and a wake-up circuit. The wake-up circuit is coupled to the gravity sensor and the electronic device. The wake-up circuit is configured to generate an execution signal according to a sensing activation signal, and generate an electronic device control signal according to the execution signal and a gravity signal to wake up the electronic device.

Abstract: A single-arm two-electrode blood pressure measuring device and a measuring method thereof are provided. The single-arm two-electrode blood pressure measuring device includes two sensing electrodes, a photoplethysmogram (PPG) sensor, an analog signal processing unit, a filter and amplifier unit, an analog-to-digital conversion unit, and a digital signal processing unit. The single-arm two-electrode blood pressure measuring method includes: providing the two sensing electrode to sense an electrocardiography(ECG) signal of an user; providing the PPG sensor to sense a PPG signal; inverting a common mode signal between the two sensing electrodes and outputting to a filter of the analog signal processing unit by a differential amplifier; filtering and amplifying the ECG signal and the PPG signal by the filter and amplifier unit; and detecting multiple feature points of the ECG signal and the PPG signal to generate an estimated blood pressure value by the digital signal processing unit.

Abstract: The disclosure provides a light cabinet, including multiple light boards and multiple light-board controllers. The light boards form a first light-board array of the light cabinet. The light-board controllers are arranged one-to-one on the light boards. The light-board controllers of the light boards in a first column of the first light-board array are connected in series to form a first controller string. The output terminal of the first controller string is connected electrically to an input terminal of a second controller string in a corresponding column of a second light-board array of another light cabinet. The input terminal of the first controller string is connected electrically to a first output terminal of a video data splitter (or an output terminal of a third controller string in a corresponding column of a third light-board array of yet another light cabinet).