Abstract: An internal rotor type nail drive device of electric nail gun, comprising a nailing rod and an internal rotor type rotary actuator that can output a specific rotation angle and can drive the nailing rod to move downward for nailing. Specifically, the rotary actuator comprises a stator and a rotor arranged inside the stator, even groups of electromagnetic mutual action components are configured in pairs between the stator and the rotor, to generate a tangential force to drive the rotor to rotate for a specific rotation angle, and to drive the nailing rod to move for a nailing stroke. The nailing stroke can be determined by a specific rotation angle. Thus, through the above configuration of the rotary actuator, the structure of the electric nail gun can be simplified, and the kinetic energy for nailing can be increased.

Abstract: A heat dissipation system of an electronic device including a body, a plurality of heat sources disposed in the body, and at least one centrifugal heat dissipation fan disposed in the body is provided. The centrifugal heat dissipation fan includes a housing and an impeller disposed in the housing on an axis. The housing has at least one inlet on the axis and has a plurality of outlets in different radial directions, and the plurality of outlets respectively correspond to the plurality of heat sources.

Abstract: A centrifugal heat dissipation fan of a portable electronic device. The centrifugal heat dissipation fan includes a hub, multiple metal blades, and at least one ring. The metal blades are disposed surrounding the hub. The metal blades include multiple radial dimensions, and the structure of the metal blade with a shorter radial dimension is a part of the structure of the metal blade with a longer radial dimension. The metal blades having different radial dimensions form at least two ring areas, and the distribution numbers of the metal blades in the at least two ring areas are different from each other. The ring surrounds the hub and connects the metal blades.

Abstract: A centrifugal heat dissipation fan including a housing and an impeller is provided. The housing has at least one inlet disposed along an axis and at least one first outlet and a second outlet located in different radial directions, wherein the first outlet and the second outlet are opposite to and separated from each other. The impeller is disposed in the housing along the axis. A heat dissipation system of an electronic device is also provided.

Abstract: A curved prism array applied to an infrared sensor wherein: the infrared sensor comprises at least an infrared sensing element which is used in detecting infrared signals within a solid-angled FOV and installed inside the curved prism array; the curved prism array has an incident focal plane and a plurality of emergent focal planes, both of which are not parallel with each other, such that infrared signals beyond the solid-angled FOV are received by the incident focal plane, refracted through one of the emergent focal planes and guided toward the infrared sensing element for expansion of the solid-angled FOV of the infrared sensing element.

Abstract: A centrifugal heat dissipation fan including a housing and an impeller disposed in the housing on an axis is provided. The housing has at least one inlet on the axis and has a plurality of outlets in different radial directions. A heat dissipation system of an electronic device is also provided.

Abstract: A nail drive device of electric nail gun includes a nailing rod and a rotary actuator that can output a specific rotation angle and can drive the nailing rod to move downward for nailing. Specifically, the rotary actuator includes a stator and a rotor surrounding it, between the stator and the rotor, even groups of electro-magnetic mutual action components are configured in pairs, to generate a tangential force to drive the rotor to rotate for a specific rotation angle, and to drive the nailing rod to move for a nailing stroke. The nailing stroke can be determined by the specific rotation angle. Thus, through the above configuration of the rotary actuator, the structure of the electric nail gun can be simplified.

Abstract: A power control method optimized against both a shortfall in supply and an oversupply, comprising acquiring scheduling information of a plurality of power supply lines, the scheduling information including electric power data, status data, and operation data of the power supply lines; inputting the electric power data into a first training model to obtain a recommended schedule of turning on the plurality of power supply lines; modifying the recommended schedule according to the status data and the operation data of each of the plurality of power supply lines to obtain an optimal power supply line; turning on the loads connected to the optimal power supply line. The method recommends power supply lines according to the equipment being used in actuality and historically. A power control system and a power control device, are also provided.

Abstract: A nail drive method applied in an electric nail gun, in which a rotary actuator is driven to generate forward rotational kinetic energy for nailing. The rotary actuator has paired wire bundles and magnetic lines arranged in circumferential directions. The nail drive method comprises boosting a pre-loaded voltage of a battery to generate a peak voltage, and storing the electric charge generated by the peak voltage, and then releasing the peak voltage and its electric charge to the rotary actuator through a nailing signal, so that the wire bundles can generate a current to interact with the magnetic lines to generate a tangential force, so that the magnetic lines can drive the rotor to rotate for a specific angle, and the rotary actuator can directly generate a forward rotational kinetic energy for nailing. Thus, the energy conversion structure installed in the conventional electric nail gun can be omitted.

Abstract: A method includes providing a semiconductor structure having an active region and an isolation structure adjacent to the active region, the active region having source and drain regions sandwiching a channel region for a transistor, the semiconductor structure further having a gate structure over the channel region. The method further includes etching a trench in one of the source and drain regions, wherein the trench exposes a portion of a sidewall of the isolation structure, epitaxially growing a first semiconductor layer in the trench, epitaxially growing a second semiconductor layer over the first semiconductor layer, changing a crystalline facet orientation of a portion of a top surface of the second semiconductor layer by an etching process, and epitaxially growing a third semiconductor layer over the second semiconductor layer after the changing of the crystalline facet orientation.

Abstract: A nail drive device of electric nail gun includes a nailing rod and a rotary actuator that can output a specific rotation angle and can drive the nailing rod to move downward for nailing. Specifically, the rotary actuator includes a stator and a rotor surrounding it, between the stator and the rotor, even groups of electro-magnetic mutual action components are configured in pairs, to generate a tangential force to drive the rotor to rotate for a specific rotation angle, and to drive the nailing rod to move for a nailing stroke. The nailing stroke can be determined by the specific rotation angle. Thus, through the above configuration of the rotary actuator, the structure of the electric nail gun can be simplified.

Abstract: An identification system using electronic paper includes an external operation device and a portable identification device, the external operation device includes an external communication module for providing external display information; the portable identification device includes a wireless communication module, an electronic paper module, a timer module and a housing. The wireless communication module is configured to receive the external display information, and the electronic paper module includes a processing unit and a display unit. The processing unit is configured to drive the display unit according to the external display information so that the display unit displays an image including identification information and subsidiary information. The wireless communication module, the electronic paper module and the timer module are disposed in the housing so that the image is seen from the housing.

Abstract: An identification system using electronic paper includes an external operation device and a portable identification device, the external operation device includes an external communication module for providing external display information; the portable identification device includes a wireless communication module, an electronic paper module, a timer module and a housing. The wireless communication module is configured to receive the external display information, and the electronic paper module includes a processing unit and a display unit. The processing unit is configured to drive the display unit according to the external display information so that the display unit displays an image including identification information and subsidiary information. The wireless communication module, the electronic paper module and the timer module are disposed in the housing so that the image is seen from the housing.

Abstract: A method includes providing a semiconductor structure having an active region and an isolation structure adjacent to the active region, the active region having source and drain regions sandwiching a channel region for a transistor, the semiconductor structure further having a gate structure over the channel region. The method further includes etching a trench in one of the source and drain regions, wherein the trench exposes a portion of a sidewall of the isolation structure, epitaxially growing a first semiconductor layer in the trench, epitaxially growing a second semiconductor layer over the first semiconductor layer, changing a crystalline facet orientation of a portion of a top surface of the second semiconductor layer by an etching process, and epitaxially growing a third semiconductor layer over the second semiconductor layer after the changing of the crystalline facet orientation.

Abstract: A method includes providing a semiconductor structure having an active region and an isolation structure adjacent to the active region, the active region having source and drain regions sandwiching a channel region for a transistor, the semiconductor structure further having a gate structure over the channel region. The method further includes etching a trench in one of the source and drain regions, wherein the trench exposes a portion of a sidewall of the isolation structure, epitaxially growing a first semiconductor layer in the trench, epitaxially growing a second semiconductor layer over the first semiconductor layer, changing a crystalline facet orientation of a portion of a top surface of the second semiconductor layer by an etching process, and epitaxially growing a third semiconductor layer over the second semiconductor layer after the changing of the crystalline facet orientation.

Abstract: A method includes providing a semiconductor structure having an active region and an isolation structure adjacent to the active region, the active region having source and drain regions sandwiching a channel region for a transistor, the semiconductor structure further having a gate structure over the channel region. The method further includes etching a trench in one of the source and drain regions, wherein the trench exposes a portion of a sidewall of the isolation structure, epitaxially growing a first semiconductor layer in the trench, epitaxially growing a second semiconductor layer over the first semiconductor layer, changing a crystalline facet orientation of a portion of a top surface of the second semiconductor layer by an etching process, and epitaxially growing a third semiconductor layer over the second semiconductor layer after the changing of the crystalline facet orientation.

Abstract: A method includes providing a semiconductor structure having an active region and an isolation structure adjacent to the active region, the active region having source and drain regions sandwiching a channel region for a transistor, the semiconductor structure further having a gate structure over the channel region. The method further includes etching a trench in one of the source and drain regions, wherein the trench exposes a portion of a sidewall of the isolation structure, epitaxially growing a first semiconductor layer in the trench, epitaxially growing a second semiconductor layer over the first semiconductor layer, changing a crystalline facet orientation of a portion of a top surface of the second semiconductor layer by an etching process, and epitaxially growing a third semiconductor layer over the second semiconductor layer after the changing of the crystalline facet orientation.

Abstract: A clock using bright dot display comprises spaced illuminating display units arranged for the graduation marks of the clock, a micro processing unit which causes the illuminating display units of corresponding graduation marks to illuminate according to the time calculated by a time base unit. Each of the illuminating display units includes a first illuminating state, a second illuminating state and a third illuminating state. The illuminating display unit is the “hour indicator mark” in its first illuminating state, the “minute indicator mark” in its second illuminating state, and both the “hour indicator mark” and “minute indicator mark” in its third illuminating state. A user may easily read the time by observing the on and off states of the illumination of the “hour indicator mark” and “minute indicator mark” as well as the illumination colors of the illuminating display units.

Abstract: A method includes providing a semiconductor structure having an active region and an isolation structure adjacent to the active region, the active region having source and drain regions sandwiching a channel region for a transistor, the semiconductor structure further having a gate structure over the channel region. The method further includes etching a trench in one of the source and drain regions, wherein the trench exposes a portion of a sidewall of the isolation structure, epitaxially growing a first semiconductor layer in the trench, epitaxially growing a second semiconductor layer over the first semiconductor layer, changing a crystalline facet orientation of a portion of a top surface of the second semiconductor layer by an etching process, and epitaxially growing a third semiconductor layer over the second semiconductor layer after the changing of the crystalline facet orientation.

Abstract: A method includes providing a semiconductor structure having an active region and an isolation structure adjacent to the active region, the active region having source and drain regions sandwiching a channel region for a transistor, the semiconductor structure further having a gate structure over the channel region. The method further includes etching a trench in one of the source and drain regions, wherein the trench exposes a portion of a sidewall of the isolation structure, epitaxially growing a first semiconductor layer in the trench, epitaxially growing a second semiconductor layer over the first semiconductor layer, changing a crystalline facet orientation of a portion of a top surface of the second semiconductor layer by an etching process, and epitaxially growing a third semiconductor layer over the second semiconductor layer after the changing of the crystalline facet orientation.