Abstract: Managing a battery including measuring, in response to a first charging current and over a first time period, a first amperage and a first voltage of the cell at predetermined intervals; measuring, in response to a second charging current and over a second time period, a second amperage and a second voltage of the cell at the predetermined intervals; determining that the first amperage of the cell was maintained greater than a first threshold amount of time within the first time period, and in response, qualifying the first amperage and the first voltage as stable; determining that the second amperage of the cell was maintained greater than a second threshold amount of time within the second time period, and in response, qualifying the second amperage and the second voltage as stable; and in response to the qualifying, calculating a DCIR of the cell based on the voltages and the amperage.

Abstract: An optical adhesive film structure having an alignment function is provided. The optical adhesive film structure includes an optical adhesive layer and a release film. The release film is disposed on the optical adhesive layer. A first film surface of the release film facing away from the optical adhesive layer has a plurality of marks. The marks are recessed into the release film relative to the first film surface and do not run through the release film. A stitching display module and a manufacturing method of the stitching display module are also provided.

Abstract: A method for an electric nail gun to drive the flywheel to transmit nailing energy, including boosting a start voltage of a battery so as to excite an electromagnet to work and then drive the flywheel loaded with nailing energy in a frictional manner to drive a nailing rod to hit the nail. Specifically, the start voltage is boosted by a voltage boost circuit and stored, and the start voltage can release electric charge to constantly excite the electromagnet to work until completion of the nailing action. Based on the present invention, the nailing quality of the electric nail gun can be enhanced.

Abstract: A centrifugal heat dissipation fan of a portable electronic device. The centrifugal heat dissipation fan includes a hub, multiple metal blades, and at least one ring. The metal blades are disposed surrounding the hub. The metal blades include multiple radial dimensions, and the structure of the metal blade with a shorter radial dimension is a part of the structure of the metal blade with a longer radial dimension. The metal blades having different radial dimensions form at least two ring areas, and the distribution numbers of the metal blades in the at least two ring areas are different from each other. The ring surrounds the hub and connects the metal blades.

Abstract: A method to control a memory cell in a memory device, where the memory cell includes a switch, a memory element, and a negative resistance device coupled in series, the method includes: determine whether the memory cell is in a read operation or not; during the read operation in the memory cell, apply a read voltage greater than a predetermined threshold voltage of the negative resistance device for making the negative resistance device entering into a negative resistance state. A memory device that includes a memory cell array is also provided.

Abstract: A method to control a memory cell in a memory device, where the memory cell includes a switch, a memory element, and a negative resistance device coupled in series, the method includes: determine whether the memory cell is in a read operation or not; during the read operation in the memory cell, apply a read voltage greater than a predetermined threshold voltage of the negative resistance device for making the negative resistance device entering into a negative resistance state. A memory device that includes a memory cell array is also provided.

Abstract: A method to control a memory cell in a memory device, where the memory cell includes a switch, a memory element, and a negative resistance device coupled in series, the method includes: determine whether the memory cell is in a read operation or not; during the read operation in the memory cell, apply a read voltage greater than a predetermined threshold voltage of the negative resistance device for making the negative resistance device entering into a negative resistance state. A memory device that includes a memory cell array is also provided.

Abstract: A semiconductor substrate is provided. The semiconductor substrate has thereon a first dielectric layer, at least one conductive pattern disposed in the first dielectric layer, and a second dielectric layer covering the first dielectric layer and the at least one conductive pattern. A via opening is formed in the second dielectric layer. The via opening exposes a portion of the at least one conductive pattern. A polish stop layer is conformally deposited on the second dielectric layer and within the via opening. A barrier layer is conformally deposited on the polish stop layer. A tungsten layer is conformally deposited on the barrier layer. The tungsten layer and the barrier layer are polished until the polish stop layer on the second dielectric layer is exposed, thereby forming a via plug in the via opening. A bottom electrode layer is conformally deposited on the second dielectric layer and the via plug.

Abstract: A semiconductor substrate is provided. The semiconductor substrate has thereon a first dielectric layer, at least one conductive pattern disposed in the first dielectric layer, and a second dielectric layer covering the first dielectric layer and the at least one conductive pattern. A via opening is formed in the second dielectric layer. The via opening exposes a portion of the at least one conductive pattern. A polish stop layer is conformally deposited on the second dielectric layer and within the via opening. A barrier layer is conformally deposited on the polish stop layer. A tungsten layer is conformally deposited on the barrier layer. The tungsten layer and the barrier layer are polished until the polish stop layer on the second dielectric layer is exposed, thereby forming a via plug in the via opening. A bottom electrode layer is conformally deposited on the second dielectric layer and the via plug.

Abstract: A magnetoresistive random access memory (MRAM) includes a plurality of input/output units. Each input/output units can read and write memory cells simultaneously. So a read/write column to column delay time (tCCD) of the MRAM is equal to or shorter than a read/write column to column delay time of a dynamic random access memory (DRAM). Consequently, a data-rate of the MRAM is equal to or shorter than a data-rate of the DRAM.

Abstract: A magnetoresistive random access memory (MRAM) includes a plurality of input/output units. Each input/output units can read and write memory cells simultaneously. So a read/write column to column delay time (tCCD) of the MRAM is equal to or shorter than a read/write column to column delay time of a dynamic random access memory (DRAM). Consequently, a data-rate of the MRAM is equal to or shorter than a data-rate of the DRAM.

Abstract: A method of forming a gate includes the following steps. A gate structure is formed on a substrate. An etch stop layer is formed on the gate structure and the substrate. A dielectric layer is formed to cover the etch stop layer. The dielectric layer is planarized to form a planarized top surface of the dielectric layer and expose a portion of the etch stop layer on the gate structure. An oxygen containing treatment is performed to form an oxygen containing layer on the exposed etch stop layer. A deposition process is performed to form an oxide layer covering the planarized top surface of the dielectric layer and the oxygen containing layer.

Abstract: A method to control a memory cell in a memory device, where the memory cell includes a switch, a memory element, and a negative resistance device coupled in series, the method includes: determine whether the memory cell is in a read operation or not; during the read operation in the memory cell, apply a read voltage greater than a predetermined threshold voltage of the negative resistance device for making the negative resistance device entering into a negative resistance state. A memory device that includes a memory cell array is also provided.

Abstract: A method to control a memory cell in a memory device, where the memory cell includes a switch, a memory element and a negative resistance device coupled in series, the method includes: determine whether the memory cell is in a read operation or not; during the read operation in the memory cell, apply a read voltage greater than a predetermined threshold voltage of the negative resistance device for making the negative resistance device entering into a negative resistance state. A memory device that includes a memory cell array is also provided.

Abstract: A semiconductor IC structure includes a substrate including at least a memory cell region and a peripheral region defined thereon, a plurality of memory cells formed in the memory cell region, at least an active device formed in the peripheral region, a plurality of contact plugs formed in the memory cell region, and at least a bit line formed in the memory cell region. The contact plugs are physically and electrically connected to the bit line. More important, bottom surfaces of the contact plugs are lower a surface of the substrate.

Abstract: A semiconductor IC structure includes a substrate including at least a memory cell region and a peripheral region defined thereon, a plurality of memory cells formed in the memory cell region, at least an active device formed in the peripheral region, a plurality of contact plugs formed in the memory cell region, and at least a bit line formed in the memory cell region. The contact plugs are physically and electrically connected to the bit line. More important, bottom surfaces of the contact plugs are lower a surface of the substrate.

Abstract: A method to control a memory cell in a memory device, where the memory cell includes a switch, a memory element and a negative resistance device coupled in series, the method includes: determine whether the memory cell is in a read operation or not; during the read operation in the memory cell, apply a read voltage greater than a predetermined threshold voltage of the negative resistance device for making the negative resistance device entering into a negative resistance state. A memory device that includes a memory cell array is also provided.

Abstract: A hydrogen sensing device includes a multi-layered structure member. The multi-layered structure member includes a stack of alternatingly disposed magnetic layers and non-ferromagnetic layers. One of the magnetic layers is a topmost layer of the multi-layered structure member. The topmost layer includes a palladium-based material to detect hydrogen.

Abstract: A planarization method is provided and includes the following steps. A substrate having a main surface is provided. A protruding structure is formed on the main surface. An insulating layer is formed conformally covering the main surface and the top surface and the sidewall of the protruding structure. A stop layer is formed on the insulating layer and at least covers the top surface of the protruding structure. A first dielectric layer is formed blanketly covering the substrate and the protruding structure and a chemical mechanical polishing process is then performed to remove a portion of the first dielectric layer until a portion of the stop layer is exposed thereby obtaining an upper surface. A second dielectric layer having a pre-determined thickness is formed covering the upper surface.

Abstract: A method for improving wafer surface uniformity is disclosed. A wafer including a first region and a second region is provided. The first region and the second region have different pattern densities. A conductive layer is formed on the wafer. A buffer layer is then formed on the conductive layer. The buffer layer is polished until the conductive layer is exposed. A portion of the conductive layer and the remaining buffer layer are etched away.