Abstract: The invention provides a solar cell and a method of fabricating the same. The solar cell, according to a preferred embodiment of the invention, includes a semiconductor structure combination and a multi-atomic-layer structure formed of at least one oxide. The semiconductor structure combination includes at least one p-n junction and has an illuminated surface. The multi-atomic-layer structure overlays the illuminated surface of the semiconductor structure combination. In particular, the multi-atomic-layer structure serves as a surface passivation layer, a transparent conductive layer, and further as an anti-reflective layer.

Abstract: The invention provides a method of fabricating a buffer layer on a substrate. In particular, the method, according the invention, fabricates a ZnO layer serving as the buffer layer on the substrate, such as a sapphire substrate, a Si substrate, a SiC substrate, or a glass substrate.

Abstract: A method to dice polycrystalline silicon into solar cell wafer by following grain growth direction of crystal so to allow larger grains to present on a surface of the solar cell wafer to reduce the grain number per unit area on the surface of the solar cell wafer and/or photo transfer interface; i.e., to reduce potential barrier and resistance created among grains; whereas extra foreign matters in the boundary will compromise photo transfer efficiency and electronic migration capability of the substrate surrounding the boundary, reduced number of boundary in turn upgrade photo transfer efficiency.

Abstract: The present invention polishes a lithium aluminum oxide (LiAlo2) crystal several times with three different materials and then the LiAlo2 crystal are soaked into an acid solution to be washed for obtaining a LiAlo2 crystal of film-free, scratch-free with smooth surface.

Abstract: A method and construction of growing wafer ingot by having a thermal shield disposed on an opening of a crucible, an opening approximating a polygonal contour disposed on the thermal shield to control gas current, heat conduction and heat radiation in ingot growth, an isotherm of condensation temperature in ingot growth approaching a polygonal form to grow the ingot into a form approximating the preset sectional form of a polygon for minimizing the material to be cut off in the subsequent process of slicing wafer ingot into chips.

Abstract: The invention provides a method of manufacturing a composite wafer structure. In particular, the method, according to the invention, is based on the fracture mechanics theory to actively control fracture induced during the manufacture of the composite wafer structure and to further protect from undesired edge damage. Thereby, the method, according to the invention, can enhance the yield rate of industrial mass production regarding the composite wafer structure.