Patents by Inventor Wen-Chung Liu
Wen-Chung Liu has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20240145378Abstract: An interconnect structure on a semiconductor die includes: a lower conductive layer; an upper conductive layer disposed above the lower conductive layer; and a VIA disposed between the lower conductive layer and the upper conductive layer. The VIA includes: a primary interconnect structure and a sacrificial stress barrier ring disposed around the primary interconnect structure and separated a distance from the primary interconnect structure. A fabrication method for the interconnect structure includes: forming a dielectric layer over a lower conductive layer; patterning photoresist (PR) layer over the dielectric layer to define a location for a plurality of VIA trenches, wherein the patterning includes patterning the PR layer to provide a center opening for the VIA trenches that is surrounded by a ring opening for the VIA trenches, wherein the center opening and the ring opening are spaced apart.Type: ApplicationFiled: February 7, 2023Publication date: May 2, 2024Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.Inventors: Tzu-Ting Liu, Chen-Chiu Huang, Dian-Hau Chen, Hung-Chao Kao, Hsiang-Ku Shen, Wen-Chiung Tu, Li Chung Yu, Yu-Chung Lai
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Publication number: 20240136444Abstract: A flash memory device and method of making the same are disclosed. The flash memory device is located on a substrate and includes a floating gate electrode, a tunnel dielectric layer located between the substrate and the floating gate electrode, a smaller length control gate electrode and a control gate dielectric layer located between the floating gate electrode and the smaller length control gate electrode. The length of a major axis of the smaller length control gate electrode is less than a length of a major axis of the floating gate electrode.Type: ApplicationFiled: December 22, 2023Publication date: April 25, 2024Inventors: Yu-Chu Lin, Chi-Chung Jen, Wen-Chih Chiang, Yi-Ling Liu, Huai-Jen Tung, Keng-Ying Liao
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Publication number: 20240096834Abstract: A method is provided. The method includes determining a first bump map indicative of a first set of positions of bumps. The method includes determining, based upon the first bump map, a first plurality of bump densities associated with a plurality of regions of the first bump map. The method includes smoothing the first plurality of bump densities to determine a second plurality of bump densities associated with the plurality of regions of the first bump map. The method includes determining, based upon the second plurality of bump densities, a second bump map indicative of the first set of positions of the bumps and a set of sizes of the bumps.Type: ApplicationFiled: March 27, 2023Publication date: March 21, 2024Inventors: Shih Hsuan HSU, Chan-Chung CHENG, Chun-Chen LIU, Cheng-Hung CHEN, Peng-Ren CHEN, Wen-Hao CHENG, Jong-l MOU
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Patent number: 11824281Abstract: An antenna element comprises one or more directors, a resonator, and a three dimensional ground assembly. Parts of the antenna element are arranged on three metal layers. A top layer has an unconnected metal bar which forms a beam director, a resonator and a top part of the ground assembly. The resonator is an integral piece substantially in the form of a loop connected to a feed line and a feed line terminal ending. The feed line terminal ending serves as the ground plane for the feed line as well as providing impedance matching from the external transceiver circuit to the resonator. The ground assembly includes a top layer ground connected to a plurality of metallized half cylindrical hole channels (or metallized via holes) which connect to a ground terminal in a bottom layer.Type: GrantFiled: July 21, 2022Date of Patent: November 21, 2023Assignee: Micro Mobio CorporationInventors: Guan-Wu Wang, Terng-Jie Lin, Yi-Hung Chen, Wen-Chung Liu, Weiping Wang
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Patent number: 11774241Abstract: Embodiments disclosed herein relate generally to methods for measuring a characteristic of a substrate. In an embodiment, the method includes scanning over the substrate with a scanning probe microscope, the substrate having fins thereon, the scanning obtaining images showing respective fin top regions of the fins, the scanning probe microscope interacting with respective portions of sidewalls of the fins by a scanning probe oscillated during the scanning, selecting images obtained at a predetermined depth below the fin top regions to obtain a line edge profile of the fins, by a processor-based system, analyzing the line edge profile of the fins using power spectral density (PSD) method to obtain spatial frequency data of the line edge profile of the fins, and by the processor-based system, calculating line edge roughness of the fins based on the spatial frequency data.Type: GrantFiled: December 15, 2021Date of Patent: October 3, 2023Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.Inventors: Wei-Shan Hu, Dong Gui, Jang Jung Lee, Che-Liang Li, Duen-Huei Hou, Wen-Chung Liu
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Publication number: 20230040346Abstract: A semiconductor device with different configurations of gate structures and a method of fabricating the same are disclosed. The semiconductor device includes a first gate structure and a second gate structure. The first gate structure includes a first interfacial oxide (IO) layer, a first high-K (HK) dielectric layer disposed on the first interfacial oxide layer, and a first dipole layer disposed at an interface between the first IL layer and the first HK dielectric layer. The HK dielectric layer includes a rare-earth metal dopant or an alkali metal dopant. The second gate structure includes a second IL layer, a second HK dielectric layer disposed on the second IL layer, and a second dipole layer disposed at an interface between the second IL layer and the second HK dielectric layer. The second HK dielectric layer includes a transition metal dopant and the rare-earth metal dopant or the alkali metal dopant.Type: ApplicationFiled: March 22, 2022Publication date: February 9, 2023Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.Inventors: Hsiang-Pi CHANG, Huang-Lin CHAO, Chung-Liang CHENG, Pinyen LIN, Chun-Chun LIN, Tzu-Li LEE, Yu-Chia LIANG, Duen-Huei HOU, Wen-Chung LIU, Chun-I WU
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Patent number: 11404788Abstract: An antenna element comprises one or more directors, a resonator, and a three dimensional ground assembly. Parts of the antenna element are arranged on three metal layers. A top layer has an unconnected metal bar which forms a beam director, a resonator and a top part of the ground assembly. The resonator is an integral piece substantially in the form of a loop connected to a feed line and a feed line terminal ending. The feed line terminal ending serves as the ground plane for the feed line as well as providing impedance matching from the external transceiver circuit to the resonator. The ground assembly includes a top layer ground connected to a plurality of metallized half cylindrical hole channels (or metallized via holes) which connect to a ground terminal in a bottom layer.Type: GrantFiled: February 28, 2021Date of Patent: August 2, 2022Assignee: Micro Mobio CorporationInventors: Guan-Wu Wang, Terng-Jie Lin, Yi-Hung Chen, Wen-Chung Liu, Weiping Wang
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Publication number: 20220107179Abstract: Embodiments disclosed herein relate generally to methods for measuring a characteristic of a substrate. In an embodiment, the method includes scanning over the substrate with a scanning probe microscope, the substrate having fins thereon, the scanning obtaining images showing respective fin top regions of the fins, the scanning probe microscope interacting with respective portions of sidewalls of the fins by a scanning probe oscillated during the scanning, selecting images obtained at a predetermined depth below the fin top regions to obtain a line edge profile of the fins, by a processor-based system, analyzing the line edge profile of the fins using power spectral density (PSD) method to obtain spatial frequency data of the line edge profile of the fins, and by the processor-based system, calculating line edge roughness of the fins based on the spatial frequency data.Type: ApplicationFiled: December 15, 2021Publication date: April 7, 2022Inventors: Wei-Shan HU, Dong GUI, Jang Jung LEE, Che-Liang LI, Duen-Huei HOU, Wen-Chung LIU
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Patent number: 11236996Abstract: Embodiments disclosed herein relate generally to methods for measuring a characteristic of a substrate. In an embodiment, the method includes scanning over the substrate with a scanning probe microscope, the substrate having fins thereon, the scanning obtaining images showing respective fin top regions of the fins, the scanning probe microscope interacting with respective portions of sidewalls of the fins by a scanning probe oscillated during the scanning, selecting images obtained at a predetermined depth below the fin top regions to obtain a line edge profile of the fins, by a processor-based system, analyzing the line edge profile of the fins using power spectral density (PSD) method to obtain spatial frequency data of the line edge profile of the fins, and by the processor-based system, calculating line edge roughness of the fins based on the spatial frequency data.Type: GrantFiled: July 13, 2020Date of Patent: February 1, 2022Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.Inventors: Wei-Shan Hu, Dong Gui, Jang Jung Lee, Che-Liang Li, Duen-Huei Hou, Wen-Chung Liu
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Publication number: 20200340807Abstract: Embodiments disclosed herein relate generally to methods for measuring a characteristic of a substrate. In an embodiment, the method includes scanning over the substrate with a scanning probe microscope, the substrate having fins thereon, the scanning obtaining images showing respective fin top regions of the fins, the scanning probe microscope interacting with respective portions of sidewalls of the fins by a scanning probe oscillated during the scanning, selecting images obtained at a predetermined depth below the fin top regions to obtain a line edge profile of the fins, by a processor-based system, analyzing the line edge profile of the fins using power spectral density (PSD) method to obtain spatial frequency data of the line edge profile of the fins, and by the processor-based system, calculating line edge roughness of the fins based on the spatial frequency data.Type: ApplicationFiled: July 13, 2020Publication date: October 29, 2020Inventors: Wei-Shan HU, Dong GUI, Jang Jung LEE, Che-Liang LI, Duen-Huei HOU, Wen-Chung LIU
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Patent number: 10746542Abstract: Embodiments disclosed herein relate generally to methods for measuring a characteristic of a substrate. In an embodiment, the method includes scanning over the substrate with a scanning probe microscope, the substrate having fins thereon, the scanning obtaining images showing respective fin top regions of the fins, the scanning probe microscope interacting with respective portions of sidewalls of the fins by a scanning probe oscillated during the scanning, selecting images obtained at a predetermined depth below the fin top regions to obtain a line edge profile of the fins, by a processor-based system, analyzing the line edge profile of the fins using power spectral density (PSD) method to obtain spatial frequency data of the line edge profile of the fins, and by the processor-based system, calculating line edge roughness of the fins based on the spatial frequency data.Type: GrantFiled: March 22, 2019Date of Patent: August 18, 2020Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.Inventors: Wei-Shan Hu, Dong Gui, Jang Jung Lee, Che-Liang Li, Duen-Huei Hou, Wen-Chung Liu
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Publication number: 20200096332Abstract: Embodiments disclosed herein relate generally to methods for measuring a characteristic of a substrate. In an embodiment, the method includes scanning over the substrate with a scanning probe microscope, the substrate having fins thereon, the scanning obtaining images showing respective fin top regions of the fins, the scanning probe microscope interacting with respective portions of sidewalls of the fins by a scanning probe oscillated during the scanning, selecting images obtained at a predetermined depth below the fin top regions to obtain a line edge profile of the fins, by a processor-based system, analyzing the line edge profile of the fins using power spectral density (PSD) method to obtain spatial frequency data of the line edge profile of the fins, and by the processor-based system, calculating line edge roughness of the fins based on the spatial frequency data.Type: ApplicationFiled: March 22, 2019Publication date: March 26, 2020Inventors: Wei-Shan Hu, Dong Gui, Jang Jung Lee, Che-Liang Li, Duen-Huei Hou, Wen-Chung Liu
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Publication number: 20160012393Abstract: In a parcel delivery method and system, a server continuously receives recipient geographic position information (GPI) from a recipient terminal associated with and carried by a recipient, and unmanned aerial vehicle (UAV) GPI from a UAV loaded with a to-be-delivered parcel via a communication network, and transmits, to the UAV, destination information, which is the recipient GPI that is last received by the server. The UAV transports, based on the destination information from the server, the parcel to an unloading position where the recipient terminal is located.Type: ApplicationFiled: March 23, 2015Publication date: January 14, 2016Inventors: Guan-Wu WANG, Yi-Hung CHEN, Yi-Jeng WANG, Wen-Chung LIU
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Patent number: 8907372Abstract: A thyristor includes a base region, a pair of first doping regions, at least one second doping region, at least one third doping region, and a pair of metal layers. The first doping regions are formed in two opposite sides of the base region and touch the base region. The second doping region is formed between the base region and one of the first doping regions. The second doping region touches the base region and the first doping region. The third doping region is formed in one of the first doping regions and touches the first doping region. The type of the first doping region is different from the types of the second doping region, the third doping region, and the base region. The metal layers touch the first doping regions respectively. The first doping regions and the third doping region are located between the metal layers.Type: GrantFiled: October 19, 2012Date of Patent: December 9, 2014Assignee: Lite-On Semiconductor Corp.Inventors: Pen-Te Chang, Wen-Chung Liu
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Publication number: 20140187095Abstract: A female socket for power cord, including a plug terminal and an integrally formed jack body, the jack body comprises of an interconnecting piece of terminal hole, the matrix extended from the interconnecting piece and a side cover connected to the lateral margin of the matrix and buckled with the matrix. There is a scab on the matrix, there is a trip on said scab, there is a blocking part matching the trip on the inner wall of the side cover, there is a tenon on the side cover, and there is a tenon hole matching the tenon on the lateral margin of the matrix.Type: ApplicationFiled: December 28, 2012Publication date: July 3, 2014Inventor: Wen-Chung Liu
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Publication number: 20140110751Abstract: A thyristor includes a base region, a pair of first doping regions, at least one second doping region, at least one third doping region, and a pair of metal layers. The first doping regions are formed in two opposite sides of the base region and touch the base region. The second doping region is formed between the base region and one of the first doping regions. The second doping region touches the base region and the first doping region. The third doping region is formed in one of the first doping regions and touches the first doping region. The type of the first doping region is different from the types of the second doping region, the third doping region, and the base region. The metal layers touch the first doping regions respectively. The first doping regions and the third doping region are located between the metal layers.Type: ApplicationFiled: October 19, 2012Publication date: April 24, 2014Applicant: LITE-ON SEMICONDUCTOR CORP.Inventors: PAN-TE CHANG, WEN-CHUNG LIU
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Patent number: 8254489Abstract: A transmission method executed in a multiple input multiple output wireless communication system may include the following steps: receiving a transmitting bit sequence; providing an X level pulse amplitude modulation (X-PAM) signal set, wherein distances between any two adjacent signal points in the X-PAM are the same; generating M signal sets according to the X-PAM signal set, wherein the ith signal set is formed by multiplying the X-PAM signal set with a parameter (1/X)(i?1), wherein i is an integer from 1 to M, and generating a X-PAM signal set joint coding/decoding table according a superposition result of the M signal sets; generating M transmitting bit sub-sequences according to the transmitting bit sequence; generating M transmitting signals according to the M transmitting bit sub-sequences and the X-PAM signal set joint coding/decoding table; transmitting the M transmitting signals to a wireless transmission channel via M transmitting antennae.Type: GrantFiled: March 18, 2009Date of Patent: August 28, 2012Assignee: Industrial Technology Research InstituteInventors: Wen-Chung Liu, Gin-Kou Ma, Muh-Rong Yang
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Publication number: 20120092087Abstract: A noise reduction device for ports of DSL filters and a method thereof are revealed. A plurality of signal transmission line sets is arranged at the ports of a DSL filter. A first cross part is formed between the first signal transmission line and the second signal transmission line of the first signal transmission line set. Before the first cross part, the first signal transmission line of the second signal transmission line set is adjacent to the second signal transmission line of the first signal transmission line set while after the first cross part, the first signal transmission line of the second signal transmission line set is adjacent to the first signal transmission line of the first signal transmission line set. Thus the noises induced by interference between two adjacent signal transmission lines cancel each other out. Therefore, no interference noise occurs between two adjacent signal transmission lines.Type: ApplicationFiled: October 15, 2010Publication date: April 19, 2012Applicant: ARCHICORE ELECTRONICS CO., LTD.Inventor: Wen Chung LIU
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Patent number: 7769355Abstract: A substantially rectangular shaped power amplifier module includes a power amplifier for amplifying radio frequency signals, a bias control terminal and a power sensing terminal disposed on the same side of the power amplifier module, an input terminal and a ground terminal disposed on the same side of the power amplifier module, and an output terminal and one or more power supply terminals disposed on the same side of the power amplifier module.Type: GrantFiled: June 14, 2005Date of Patent: August 3, 2010Assignee: Micro Mobio CorporationInventors: Ikuroh Ichitsubo, Kanya Kubota, Wen Chung Liu
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Publication number: 20100166096Abstract: A transmission method executed in a multiple input multiple output wireless communication system may include the following steps: receiving a transmitting bit sequence; providing an X level pulse amplitude modulation (X-PAM) signal set, wherein distances between any two adjacent signal points in the X-PAM are the same; generating M signal sets according to the X-PAM signal set, wherein the ith signal set is formed by multiplying the X-PAM signal set with a parameter (1/X)(i-1), wherein i is an integer from 1 to M, and generating a X-PAM signal set joint coding/decoding table according a superposition result of the M signal sets; generating M transmitting bit sub-sequences according to the transmitting bit sequence; generating M transmitting signals according to the M transmitting bit sub-sequences and the X-PAM signal set joint coding/decoding table; transmitting the M transmitting signals to a wireless transmission channel via M transmitting antennae.Type: ApplicationFiled: March 18, 2009Publication date: July 1, 2010Applicant: INDUSTRIAL TECHNOLOGY RESEARCH INSTITUTEInventors: Wen-Chung Liu, Gin-Kou Ma, Muh-Rong Yang