Abstract: The present invention provides a ventilating and illuminating apparatus. The ventilating and illuminating apparatus includes a ventilating fan, a connecting frame, an illuminating device and a connecting shaft. The ventilating fan has a housing. The connecting frame is connected to the housing and has a mounting portion and a fastening hole. The fastening hole is disposed on the mounting portion. The illuminating device has an illuminating element and a through hole. The connecting shaft partially passes through the through hole of the illuminating device and the fastening hole of the connecting frame and is mounted on the mounting portion of the connecting frame, so as to fasten the illuminating device on the mounting portion of the connecting frame.

Abstract: A nitride-based semiconductor light-emitting device comprises a light-emitting stack comprising a first semiconductor structure having a first conductivity, a second semiconductor structure having a second conductivity, and an active region between the first semiconductor structure and the second semiconductor structure; a semiconductor buffer structure formed under the first semiconductor structure; an un-doped AlGaN layer formed between the first semiconductor structure and the semiconductor buffer structure; and a substrate under the semiconductor buffer structure, wherein the semiconductor buffer structure comprises an un-doped first layer under the un-doped AlGaN layer, and an un-doped second layer between the un-doped first layer and the substrate, and wherein the thickness of the un-doped first layer is thicker than that of the un-doped second layer and the un-doped AlGaN layer.

Abstract: A ventilation fan according to the invention comprises a fan module, a fire damper module and a cover module. The fan module comprises a housing having an air intake and an air outtake. The fire damper module is disposed in the air intake and comprises a fire damper body and an adjustment element. The fire damper body has a flange extending inwardly on the inner surface thereof and the flange has an opening. The adjustment element is disposed near the opening and on one closer side of the flange to the fan module. The cover module is disposed on the fire damper module.

Abstract: A nitride-based semiconductor light-emitting device includes a light-emitting stack comprising a first semiconductor structure having a first conductivity, a second semiconductor structure having a second conductivity, and an active region interposed the first semiconductor structure and the second semiconductor structure; a semiconductor buffer structure formed under the first semiconductor structure; and an un-doped AlGaN layer formed between the first semiconductor structure and the semiconductor buffer structure.

Abstract: A method of forming a semiconductor device includes depositing a light reflecting layer over a substrate. The method also includes forming a protection layer over the light reflecting layer. The method further includes forming an anti-reflective coating (ARC) layer over the protection layer. The method additionally includes forming an opening in the ARC layer, the protection layer and the light reflecting layer exposing the substrate. The method also includes removing the ARC layer in a wet solution comprising H2O2, the ARC layer being exposed to the H2O2 at a flow rate greater than about 10 standard cubic centimeters per minute (sccm).

Abstract: A device management system includes a bus bar, a device management module, and a remote management module. The device management module includes at least one remotely-controllable switching circuit and a detecting circuit. When a device is installed in the rack cabinet, the remotely-controllable switching circuit connected with the device is enabled by the detecting circuit. The remote management module is in communication with the remotely-controllable switching circuit and the detecting circuit through the bus bar. The information of the device is acquired by the remote management module through the remotely-controllable switching circuit. A switch element of the remotely-controllable switching circuit which is connected to the device is selectively turned on or turned off by the remote management module. When the switch element is turned on, the DC power is transmitted to the device through the switch element.

Abstract: A device management system includes a bus bar, a device management module, and a remote management module. The device management module includes at least one remotely-controllable switching circuit and a detecting circuit. When a device is installed in the rack cabinet, the remotely-controllable switching circuit connected with the device is enabled by the detecting circuit. The remote management module is in communication with the remotely-controllable switching circuit and the detecting circuit through the bus bar. The information of the device is acquired by the remote management module through the remotely-controllable switching circuit. A switch element of the remotely-controllable switching circuit which is connected to the device is selectively turned on or turned off by the remote management module. When the switch element is turned on, the DC power is transmitted to the device through the switch element.

Abstract: A luminaire is provided, which includes a first light source for providing an illumination light and a second light source passing through at least one image pattern for providing a patterned light. The first light source and the second light source are coupled to a driving circuit and covered by a lamp cover. The driving circuit is used to selectively drive at least one of the first light source and the second light source for providing the illumination light and/or the patterned light. A user may turn on or switch different patterns by touching a casing of the luminaire.

Abstract: A method of forming a semiconductor device includes depositing a light reflecting layer over a substrate. The method also includes forming a protection layer over the light reflecting layer. The method further includes forming an anti-reflective coating (ARC) layer over the protection layer. The method additionally includes forming an opening in the ARC layer, the protection layer and the light reflecting layer exposing the substrate. The method also includes removing the ARC layer in a wet solution comprising H2O2, the ARC layer being exposed to the H2O2 at a flow rate greater than about 10 standard cubic centimeters per minute (sccm).

Abstract: A light-emitting device includes multiple light-emitting diode units sequentially connected and coupled to a first power source, a switching circuit connected to the light-emitting diode units, a second power source, and a control module. Power provided by the first power source is larger than power provided by the second power source. The second power source is connected to the light-emitting diode units through the switching circuit, which is controlled by the control module to facilitate the delivery of the power of the first power source or the second power source to the light-emitting diode units. When the first power source serves to deliver the power thereof to the light-emitting diode units, the light-emitting diode units may be in a serial conduction. When the second power source serves to deliver the power thereof to the light-emitting diode units, the light-emitting diode units may be in a parallel conduction.

Abstract: A method of forming of MEMS nanostructures includes a portion of a substrate is recessed to form a plurality of mesas in the substrate. Each of the plurality of mesas has a top surface and a sidewall surface. A light reflecting layer is deposited over the substrate thereby covering the top surface and the sidewall surface of each mesa. A protection layer is formed over the light reflecting layer. An ARC layer is formed over the protection layer. An opening in a photo resist layer is formed over the ARC layer over each mesa. A portion of the ARC layer, the protection layer and the light reflecting layer are removed through the opening to expose the top surface of each mesa. The photo resist layer and the ARC layer over the top surface of each mesa are removed.

Abstract: A ventilation fan with lights includes an exhaust fan, a lid, and an illumination apparatus. The lid covers an entrance of the exhaust fan. The lid has plural exhaust gratings and an opening. The exhaust gratings are arranged at least adjacent to opposite sides of the opening. The illumination apparatus is embedded in the opening of the lid. The illumination apparatus includes a lamp housing, a lamp plate, plural light emitting diodes (LEDs), a lampshade, and plural scattering microstructures. LEDs are arranged on the lamp plate. The lampshade covers the lamp housing. The lampshade and the lamp housing cooperate to define a lamp chamber therebetween. The lamp plate and the LEDs are disposed in the lamp chamber. The scattering microstructures are disposed on an inner surface of the lampshade facing the lamp chamber.

Abstract: A nitride-based semiconductor light-emitting device includes: a light-emitting stack comprising a first semiconductor structure having a first conductivity, a second semiconductor structure having a second conductivity, and an active region interposed the first semiconductor structure and the second semiconductor structure; a semiconductor buffer structure formed under the first semiconductor structure; and an un-doped or unintentionally-doped AlGaN based layer formed between the first semiconductor structure and the semiconductor buffer structure.

Abstract: A nitride-based light-emitting device includes a substrate and a plurality of layers formed over the substrate in the following sequence: a nitride-based buffer layer formed by nitrogen, a first group III element, and optionally, a second group III element, a first nitride-based semiconductor layer, a light-emitting layer, and a second nitride-based semiconductor layer.

Abstract: A nitride-based light-emitting device includes a substrate and a plurality of layers formed over the substrate in the following sequence: a nitride-based buffer layer formed by nitrogen, a first group III element, and optionally, a second group III element, a first nitride-based semiconductor layer, a light-emitting layer, and a second nitride-based semiconductor layer.

Abstract: A method of forming of MEMS nanostructures includes a portion of a substrate is recessed to form a plurality of mesas in the substrate. Each of the plurality of mesas has a top surface and a sidewall surface. A light reflecting layer is deposited over the substrate thereby covering the top surface and the sidewall surface of each mesa. A protection layer is formed over the light reflecting layer. An ARC layer is formed over the protection layer. An opening in a photo resist layer is formed over the ARC layer over each mesa. A portion of the ARC layer, the protection layer and the light reflecting layer are removed through the opening to expose the top surface of each mesa. The photo resist layer and the ARC layer over the top surface of each mesa are removed.

Abstract: A nitride-based light-emitting device includes a substrate and a plurality of layers formed over the substrate in the following sequence: a nitride-based buffer layer formed by nitrogen, a first group III element, and optionally, a second group III element, a first nitride-based semiconductor layer, a light-emitting layer, and a second nitride-based semiconductor layer.

Abstract: A ventilation fan with lights includes an exhaust fan, a lid, and an illumination apparatus. The lid covers an entrance of the exhaust fan. The lid has plural exhaust gratings and an opening. The exhaust gratings are arranged at least adjacent to opposite sides of the opening. The illumination apparatus is embedded in the opening of the lid. The illumination apparatus includes a lamp housing, a lamp plate, plural light emitting diodes (LEDs), a lampshade, and plural scattering microstructures. LEDs are arranged on the lamp plate. The lampshade covers the lamp housing. The lampshade and the lamp housing cooperate to define a lamp chamber therebetween. The lamp plate and the LEDs are disposed in the lamp chamber. The scattering microstructures are disposed on an inner surface of the lampshade facing the lamp chamber.