Abstract: In a method of manufacturing a semiconductor device, the semiconductor device includes a non-volatile memory formed in a memory cell area and a ring structure area surrounding the memory cell area. In the method, a protrusion of a substrate is formed in the ring structure area. The protrusion protrudes from an isolation insulating layer. A high-k dielectric film is formed, thereby covering the protrusion and the isolation insulating layer. A poly silicon film is formed over the high-k dielectric film. The poly silicon film and the high-k dielectric film are patterned. Insulating layers are formed over the patterned poly silicon film and high-k dielectric film, thereby sealing the patterned high-k dielectric film.

Abstract: Integrated fan-out packages and methods of forming the same are disclosed. An integrated fan-out package includes two dies, an encapsulant, a first metal line and a plurality of dummy vias. The encapsulant is disposed between the two dies. The first metal line is disposed over the two dies and the encapsulant, and electrically connected to the two dies. The plurality of dummy vias is disposed over the encapsulant and aside the first metal line.

Abstract: A method of forming a semiconductor device includes forming an opening in a dielectric layer, and forming a barrier layer in the opening. A combined liner layer is formed over the barrier layer by first forming a first liner layer over the barrier layer, and forming a second liner layer over the first liner layer, such that the first liner layer and the second liner layer intermix. A conductive material layer is formed over the combined liner layer, and a thermal process is performed to reflow the conductive material layer.

Abstract: A semiconductor device includes a semiconductor substrate, a first semiconductor fin, a second semiconductor fin, an isolation structure, and a gate structure. The first and second semiconductor fins extend upwards from a top surface of the semiconductor substrate. The isolation structure is between the first semiconductor fin and the second semiconductor fin. The gate structure includes a first work function layer, a second work function layer, and a third work function layer. The first work function layer surrounds the first semiconductor fin and the second semiconductor fin. The second work function layer surrounds the first semiconductor fin and is over the first work function layer. The third work function layer surrounds the first semiconductor fin and is over the second work function layer and the isolation structure. The first work function layer is in contact with the second work function layer and the third work function layer.

Abstract: A method of communication operation performed by a user equipment is provided. The method comprises: receiving a configuration, wherein the configuration comprises a resource setting; receiving a first set of resource comprising at least one resource, wherein the first set of resource is configured via the configuration; and performing a first operation, wherein the first operation is related to the first set of resource.

Abstract: A method of communication operation performed by a user equipment is provided. The method comprises: receiving a configuration, wherein the configuration comprises a resource setting; receiving at least one resource, wherein the at least one resource is configured via the configuration; performing channel state information (CSI) measurement, wherein CSI measurement is related to the at least one resource.

Abstract: Provided is an electronic package structure, including a substrate, a first electronic component disposed on the substrate, at least one second electronic component disposed on the substrate, an insulating film disposed on the second electronic component and the substrate, an insulating glue filled onto the second electronic component and the substrate to cover at least part of the insulating film, a liquid metal disposed on the first electronic component, and a heat-dissipating plate disposed on the first electronic component to squeeze the liquid metal. The insulating film and the insulating glue prevent the overflowing liquid metal from contacting the second electronic component and the substrate.

Abstract: A communication device for handling a measurement comprises at least one storage device; and at least one processing circuit coupled to the at least one storage device. The at least one storage device stores, and the at least one processing circuit is configured to execute instructions of: receiving information of a measurement set for at least one slot from a base station (BS), wherein the information comprises at least one of a measurement timing configuration of the measurement set and a measurement resource of the measurement set; and performing the measurement in the at least one slot according to the measurement set, to obtain a measurement result.

Abstract: A gas exchange device for filtering a gas is provided. The gas exchange device includes a gas-intake channel having a gas-intake-channel inlet and a gas-intake-channel outlet, a gas-exhaust channel disposed aside the gas-intake channel and including a gas-exhaust-channel inlet and a gas-exhaust-channel outlet, a purification unit disposed in the gas-intake channel for filtering the gas passing through the gas-intake channel, a gas-intake guider and a gas-exhaust guider for guiding the gas, a driving controller disposed in the gas-intake channel near the gas-intake guider for controlling enablement and disablement of the purification unit, the gas-intake guider and the gas-exhaust guider, and a gas detection main body for detecting the gas and generating detection data.

Abstract: A fan including a frame and an impeller is disclosed. The frame has an air inlet and an air outlet. The impeller is disposed in the frame and includes a hub and multiple blades. Each blade has a negative pressure surface facing the air inlet, a positive pressure surface facing the air outlet, a blade root, and a blade tip opposite to the blade root. In a first region extending from the blade root to the blade tip by a first length, the negative pressure surface and the positive pressure surface are respectively a convex arc surface and a plane. In a second region extending from the blade tip to the blade root by a second length smaller than the first length, the negative pressure surface and the positive pressure surface are respectively a convex arc surface and a concave arc surface or both are convex arc surfaces.

Abstract: A heat dissipation module used for an electronic device is provided. The electronic device has a heat source. The heat dissipation module includes an evaporator, a pipe, and a working fluid. The evaporator has a recess at an exterior surface thereof, and is thermally contacted with the heat source to absorb heat generated from the heat source. The pipe is connected to an inner space of the evaporator and forms a loop. The working fluid is filled in the loop, wherein the working fluid in liquid passes through the evaporator, absorbs heat, and is transformed into vapor to flow out of the evaporator.

Abstract: A method of forming a semiconductor device includes forming an opening in a dielectric layer, and forming a barrier layer in the opening. A combined liner layer is formed over the barrier layer by first forming a first liner layer over the barrier layer, and forming a second liner layer over the first liner layer, such that the first liner layer and the second liner layer intermix. A conductive material layer is formed over the combined liner layer, and a thermal process is performed to reflow the conductive material layer.

Abstract: A method for manufacturing a semiconductor device is provided. The method includes etching a dummy gate to form a gate trench to expose a channel portion of a first fin and a first isolation structure; depositing a gate dielectric layer and first and second work function layers, wherein the second work function layer has a first portion directly over the channel portion of the first fin and a second portion directly over the first isolation structure; etching the second portion of the second work function layer, wherein the first portion of the second work function layer remains; depositing a third work function layer over and in contact with the first portion of the second work function layer and the first work function layer; and filling the gate trench with a gate metal.

Abstract: A fan is provided herein, including a housing, a hub, and a plurality of blades. The housing includes a top case and a bottom case. The hub is rotatably disposed between the top case and the bottom case in an axial direction. The blades extend from the hub in a radial direction, located between the top case and the bottom case. Each of the blades has a proximal end and a distal end. The proximal end is connected to the hub. The distal end is opposite from the proximal end, located at the other side of the blade, having at least one recessed portion. Each of the recessed portions form a passage for air.

Abstract: A wafer structure is disclosed and includes a chip substrate and at least one inkjet chip having plural ink-drip generators. Each ink-drop generator includes a thermal-barrier layer, a resistance heating layer and a protective layer. The thermal-barrier layer is formed on the chip substrate, the resistance heating layer is formed on the thermal-barrier layer, a part of the protective layer is formed on the resistance heating layer, and the barrier layer is formed on the protective layer. The ink-supply chamber has a bottom in communication with the protective layer, and a top in communication with the nozzle. The thermal-barrier layer has a thickness of 500˜5000 angstroms, the protective layer has a thickness of 150˜3500 angstroms, the resistance heating layer has a thickness of 100˜500 angstroms, the resistance heating layer has a length of 5˜30 microns, and the resistance heating layer has a width of 5˜10 microns.

Abstract: The disclosed embodiments relate to a dismantling device configured for a frame of a PV module. The dismantling device includes a connection portion, a first holding portion, and a second holding portion. The first holding portion is connected to the connection portion and configured to press against one of an inner wall and outer wall of the frame. The second holding portion is slidably disposed on the connection portion and movably closer to or away from the first holding portion along a sliding direction. The second holding portion is configured to press against the other one of the inner wall and the outer wall so as to clamp the frame with the first holding portion and to distort the frame.

Abstract: A heat dissipation system suitable for a portable electronic device with two heat sources is provided. The heat dissipation system includes a fan, two heat dissipation fin sets, a gate, a first heat pipe, a second heat pipe, and a control unit. The fan is a centrifugal fan and has a main outlet and a sub outlet. The heat dissipation fin sets are disposed respectively at the main outlet and the sub outlet, and the gate is disposed at the sub outlet. The first heat pipe thermally contacts the heat sources and the heat dissipation fin set located at the main outlet. The second heat pipe thermally contacts one of the heat sources and the two heat dissipation fin sets. The control unit is electrically connected to the gate to drive the gate to open or close the sub outlet according to a load of the two heat sources.

Abstract: A centrifugal heat dissipation fan including a hub, a frame, and double-layer fan blade sets is provided. The double-layer fan blade sets surround the hub and are arranged along a radial direction at an inner layer and an outer layer. A gap is maintained along the radial direction between the fan blade set located at the inner layer and the fan blade set located at the outer layer. The frame is connected to the hub and the fan blade set located at the outer layer.

Abstract: Provided is a centrifugal heat dissipation fan including a housing and an impeller. The impeller is disposed in the housing. The impeller has a hub and multiple blades disposed surrounding the hub. Every two adjacent blades have different blade structures relative to the housing such that the blade structures pass by a fixed position of the housing and generate blade tones of varying frequencies when the impeller rotates.