Patents by Inventor Wen-Hsien Huang

Wen-Hsien Huang has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Method for increasing the removal rate of photoresist layer
    Patent number: 8129101
    Abstract: A method for increasing the removal rate of a photoresist layer is provided. The method includes performing a pre-treatment of a substrate, such as a plasma process, before forming the photoresist layer. The method can be applied to the fabrication of semiconductor devices for increasing the removal rate of the photoresist layer.
    Type: Grant
    Filed: March 6, 2009
    Date of Patent: March 6, 2012
    Inventors: Wen-Hsien Huang, Min-Chieh Yang, Jiunn-Hsing Liao
  • CIRCUIT BORAD SHIELD
    Publication number: 20100061066
    Abstract: A circuit board shield includes a cover, a plurality of connecting pins and a plurality of resilient conductive pins extended downwardly from the cover. The connecting pins are able to be twisted, and comprise hooks. The shield can be mounted to a circuit board without soldering.
    Type: Application
    Filed: May 3, 2009
    Publication date: March 11, 2010
    Applicants: HONG FU JIN PRECISION INDUSTRY (ShenZhen) CO., LTD., HON HAI PRECISION INDUSTRY CO., LTD.
    Inventors: ZHENG-YONG GUAN, TING DONG, CHENG-HAO CHOU, GAO-HUI TANG, WEN-HSIANG LU, WEN-HSIEN HUANG
  • METHOD FOR INCREASING THE REMOVAL RATE OF PHOTORESIST LAYER
    Publication number: 20090169767
    Abstract: A method for increasing the removal rate of a photoresist layer is provided. The method includes performing a pre-treatment of a substrate, such as a plasma process, before forming the photoresist layer. The method can be applied to the fabrication of semiconductor devices for increasing the removal rate of the photoresist layer.
    Type: Application
    Filed: March 6, 2009
    Publication date: July 2, 2009
    Applicant: United Microelectronics Corp.
    Inventors: Wen-Hsien Huang, Min-Chieh Yang, Jiunn-Hsing Liao
  • Method of fabricating semiconductor devices
    Patent number: 7531434
    Abstract: A method for increasing the removal rate of a photoresist layer used as an ion implant mask. The method includes performing a pre-treatment of a substrate, such as a plasma process, before forming the photoresist layer. The method can be applied to the fabrication of semiconductor devices for increasing the removal rate of the photoresist layer.
    Type: Grant
    Filed: October 20, 2005
    Date of Patent: May 12, 2009
    Assignee: United Microelectronics Corp.
    Inventors: Wen-Hsien Huang, Min-Chieh Yang, Jiunn-Hsing Liao
  • METHODS OF REMOVING PHOTORESIST AND FABRICATING SEMICONDUCTOR DEVICES
    Publication number: 20070093031
    Abstract: A method for increasing the removal rate of a photoresist layer used as an ion implant mask. The method includes performing a pre-treatment of a substrate, such as a plasma process, before forming the photoresist layer. The method can be applied to the fabrication of semiconductor devices for increasing the removal rate of the photoresist layer.
    Type: Application
    Filed: October 20, 2005
    Publication date: April 26, 2007
    Inventors: Wen-Hsien Huang, Min-Chieh Yang, Jiunn-Hsing Liao