Patents by Inventor Wen-Huang Liu

Wen-Huang Liu has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20220173497
    Abstract: A semiconductor package structure is provided. The semiconductor package structure includes a redistribution layer (RDL) structure formed on a non-active surface of a semiconductor die. An antenna structure includes a first antenna element formed in the RDL structure, a first insulating layer covering the RDL structure, a second insulating layer formed on the first insulating layer, and a second antenna element formed on and in direct contact with the second insulating layer.
    Type: Application
    Filed: February 18, 2022
    Publication date: June 2, 2022
    Applicant: Media Tek Inc.
    Inventors: Nai-Wei Liu, Yen-Yao Chi, Yeh-Chun Kao, Shih-Huang Yeh, Tzu-Hung Lin, Wen-Sung Hsu
  • Patent number: 10862013
    Abstract: A high-brightness vertical light emitting diode (LED) device includes an outwardly located metal electrode having a low illumination side and a high illumination side. The LED device is formed by: forming the metal electrode on an edge of a surface of a LED epitaxy structure using a deposition method, such as physical vapor deposition (PVD), chemical vapor deposition (CVD), evaporation, electro-plating, or any combination thereof; and then performing a packaging process. The composition of the LED may be a nitride, a phosphide or an arsenide. The LED has the following advantages: improving current spreading performance, reducing light-absorption of the metal electrode, increasing brightness, increasing efficiency, and thereby improving energy efficiency. The metal electrode is located on the edge of the device and on the light emitting side. The metal electrode has two side walls, among which one side wall can receive more emission light from the device in comparison with the other one.
    Type: Grant
    Filed: April 24, 2013
    Date of Patent: December 8, 2020
    Assignee: SemiLEDs Optoelectronics Co., Co., Ltd.
    Inventors: Wen-Huang Liu, Li-Wei Shan, Chen-Fu Chu
  • Publication number: 20160151435
    Abstract: The present invention discloses a pharmaceutical composition and applications thereof. The pharmaceutical composition comprises an extract of Antrodia cinnamomea fruiting bodies and a pharmaceutical carrier. The extract is fabricated via soaking the powder of Antrodia cinnamomea fruiting bodies in hot water and then undertaking extraction with a low-polarity solvent to acquire the extract from the soaked powder. The pharmaceutical composition can function as an adjuvant drug of chemotherapy drugs to enhance the treatment effect of the chemotherapy drugs cisplatin and gemcitabine and relieve the chemotherapy drug-induced side-effects of hair loss, muscle degradation and atrophy, gastrointestinal lesion, nephritis and renal injury.
    Type: Application
    Filed: November 20, 2015
    Publication date: June 2, 2016
    Inventors: FENG-YUE WENG, WEN-HUANG LIU, CHIEN-LIANG KUO, CHIA-CHI LIN
  • Patent number: 9130114
    Abstract: A vertical light emitting diode (VLED) die includes an epitaxial structure having a first-type confinement layer, an active layer on the first-type confinement layer configured as a multiple quantum well (MQW) configured to emit light, and a second-type confinement layer having a roughened surface. In a first embodiment, the roughened surface includes a pattern of holes with a depth (d) in a major surface thereof surrounded by a pattern of protuberances with a height (h) on the major surface. In a second embodiment, the roughened surface includes a pattern of primary protuberances surrounded by a pattern of secondary protuberances.
    Type: Grant
    Filed: May 16, 2013
    Date of Patent: September 8, 2015
    Assignee: SemiLEDS Optoelectronics Co., Ltd.
    Inventors: Chen-Fu Chu, Hao-Chung Cheng, Feng-Hsu Fan, Wen-Huang Liu, Chao-Chen Cheng, David Trung Doan, Yang Po Wen
  • Patent number: 8933467
    Abstract: A light emitting diode (LED) system includes a substrate, an application specific integrated circuit (ASIC), and at least one light emitting diode (LED) that includes a Group-III nitride based material such as GaN, InGaN, AlGaN, AlInGaN or other (Ga, In or Al) N-based materials. The light emitting diode (LED) system can also include a polymer lens, and a phosphor layer on the lens or light emitting diode (LED) for producing white light. In addition, multiple light emitting diodes (LEDs) can be mounted on the substrate, and can have different colors for smart color control lighting. The substrate and the application specific integrated circuit (ASIC) are configured to provide an integrated LED circuit having smart functionality. In addition, the substrate is configured to compliment and expand the functions of the application specific integrated circuit (ASIC), and can also include built in integrated circuits for performing additional electrical functions.
    Type: Grant
    Filed: December 2, 2011
    Date of Patent: January 13, 2015
    Assignee: SemiLEDS Optoelectronics Co., Ltd.
    Inventors: Trung Tri Doan, Tien Wei Tan, Wen-Huang Liu, Chen-Fu Chu, Yung Wei Chen
  • Publication number: 20140339496
    Abstract: A vertical light emitting diode (VLED) die includes an epitaxial structure having a first-type confinement layer, an active layer on the first-type confinement layer configured as a multiple quantum well (MQW) configured to emit light, and a second-type confinement layer having a roughened surface. In a first embodiment, the roughened surface includes a pattern of holes with a depth (d) in a major surface thereof surrounded by a pattern of protuberances with a height (h) on the major surface. In a second embodiment, the roughened surface includes a pattern of primary protuberances surrounded by a pattern of secondary protuberances.
    Type: Application
    Filed: May 16, 2013
    Publication date: November 20, 2014
    Inventors: Chen-FU Chu, Hao-Chun Cheng, Feng-Hsu Fan, Wen-Huang Liu, Chao-Chen Cheng, David Trung Doan, Yang Po Wen
  • Patent number: 8871502
    Abstract: The present invention discloses a culture medium device, which comprises a plate containing a solid-state or gel-state culture medium layer; a shield layer covering the culture medium layer; and a lid covering the plate. The shield layer is in a solid, gel or liquid state and contains sugar at a concentration of greater than 0% (w/w) and less than or equal to 0.1% (w/w). Via the shield layer containing a select composition, the present invention can reduce the affection of microbiological contamination and promote the yield and productivity of biomass in the process of inoculating and cultivating Polyporales.
    Type: Grant
    Filed: January 25, 2013
    Date of Patent: October 28, 2014
    Assignee: Balay Biotechnology Corporation
    Inventors: Wen-Huang Liu, Chien-Liang Kuo
  • Patent number: 8871547
    Abstract: A method for fabricating a vertical light-emitting diode (VLED) structure includes the steps of providing a carrier substrate, and forming a semiconductor structure on the carrier substrate having a p-type confinement layer, a multiple quantum well (MQW) layer in electrical contact with the p-type confinement layer configured to emit electromagnetic radiation, and an n-type confinement layer in electrical contact with the multiple quantum well (MQW) layer. The method also includes the steps of removing the carrier substrate using a laser pulse to expose an inverted surface of the n-type confinement layer, and forming a metal contact on the surface of the n-type confinement layer.
    Type: Grant
    Filed: February 10, 2014
    Date of Patent: October 28, 2014
    Assignee: SemiLEDS Optoelectronics Co., Ltd.
    Inventors: Chen-Fu Chu, Wen-Huang Liu, Jiunn-Yi Chu, Chao-Chen Cheng, Hao-Chun Cheng, Feng-Hsu Fan, Trung Tri Doan
  • Patent number: 8835953
    Abstract: A lighting device comprising LEDs with phosphor layers includes a plurality of LED sets which can emit light with a peak emission wavelength between 360 nm and 490 nm; and a plurality of sets of phosphor layers covering the corresponding LED sets among the plurality of LED sets. At least two of the plurality of LED sets respectively have peak emission wavelength different from each other. The dominant fluorescence wavelength of at least one of the plurality of sets of phosphor layers ranges from 500 nm to 580 nm, and the dominant fluorescence wavelength of at least one of the other sets of phosphor layers ranges from 590 nm to 650 nm.
    Type: Grant
    Filed: March 11, 2010
    Date of Patent: September 16, 2014
    Assignee: Semileds Optoelectronics Co., Ltd.
    Inventors: Wen-Huang Liu, Trung-Tri Doan, Chuong-Anh Tran
  • Patent number: 8785958
    Abstract: A light emitting element is provided in this application, including a carrier; a conductive connecting structure disposed on the carrier and including a transparent conductive connecting layer; and an epitaxial stack structure disposed on the conductive connecting structure and including a plurality of electrically connected epitaxial light-emitting stacks, which substantially have the same width.
    Type: Grant
    Filed: March 25, 2013
    Date of Patent: July 22, 2014
    Assignee: Epistar Corporation
    Inventors: Ciu-Lin Yao, Min-Hsun Hsieh, Wen-Huang Liu
  • Publication number: 20140178981
    Abstract: The present invention discloses a culture medium device, which comprises a plate containing a solid-state or gel-state culture medium layer; a shield layer covering the culture medium layer; and a lid covering the plate. The shield layer is in a solid, gel or liquid state and contains sugar at a concentration of greater than 0% (w/w) and less than or equal to 0.1% (w/w). Via the shield layer containing a select composition, the present invention can reduce the affection of microbiological contamination and promote the yield and productivity of biomass in the process of inoculating and cultivating Polyporales.
    Type: Application
    Filed: January 25, 2013
    Publication date: June 26, 2014
    Applicant: BALAY BIOTECHNOLOGY CORPORATION
    Inventors: WEN-HUANG LIU, CHIEN-LIANG KUO
  • Publication number: 20140151630
    Abstract: Techniques for fabricating metal devices, such as vertical light-emitting diode (VLED) devices, power devices, laser diodes, and vertical cavity surface emitting laser devices, are provided. Devices produced accordingly may benefit from greater yields and enhanced performance over conventional metal devices, such as higher brightness of the light-emitting diode and increased thermal conductivity. Moreover, the invention discloses techniques in the fabrication arts that are applicable to GaN-based electronic devices in cases where there is a high heat dissipation rate of the metal devices that have an original non-(or low) thermally conductive and/or non-(or low) electrically conductive carrier substrate that has been removed.
    Type: Application
    Filed: December 4, 2012
    Publication date: June 5, 2014
    Inventors: Feng-Hsu Fan, Trung Tri Doan, Chuong Anh Tran, Chen-Fu Chu, Chao-Chen Cheng, Jiunn-Yi Chu, Wen-Huang Liu, Hao-Chun Cheng, Jui-Kang Yen
  • Publication number: 20140154821
    Abstract: A method for fabricating a vertical light-emitting diode (VLED) structure includes the steps of providing a carrier substrate, and forming a semiconductor structure on the carrier substrate having a p-type confinement layer, a multiple quantum well (MQW) layer in electrical contact with the p-type confinement layer configured to emit electromagnetic radiation, and an n-type confinement layer in electrical contact with the multiple quantum well (MQW) layer. The method also includes the steps of removing the carrier substrate using a laser pulse to expose an inverted surface of the n-type confinement layer, and forming a metal contact on the surface of the n-type confinement layer.
    Type: Application
    Filed: February 10, 2014
    Publication date: June 5, 2014
    Applicant: SemiLEDS Optoelectronics Co., Ltd.
    Inventors: CHEN-FU CHU, WEN-HUANG LIU, JIUNN-YI CHU, CHAO-CHEN CHENG, HAO-CHUN CHENG, FENG-HSU FAN, Trung Tri Doan
  • Patent number: 8716041
    Abstract: A method for fabricating a light emitting diode includes the steps of providing a thermal conductive substrate having an electrical isolation layer, forming an anode via and a cathode via side by side on a first side of the substrate part way through the substrate, forming an anode through interconnect in the anode via and a cathode through interconnect in the cathode via, thinning the substrate from a second side of the substrate to the anode through interconnect and the cathode through interconnect, and mounting a LED chip to the first side in electrical communication with the cathode through interconnect and the anode through interconnect.
    Type: Grant
    Filed: August 22, 2013
    Date of Patent: May 6, 2014
    Assignee: SemiLEDS Optoelectrics Co., Ltd.
    Inventors: Trung Tri Doan, Chen-Fu Chu, Wen-Huang Liu, Feng-Hsu Fan, Hao-Chun Cheng, Fu-Hsien Wang
  • Patent number: 8703515
    Abstract: Methods for controlling current flow in semiconductor devices, such as LEDs are provided. For some embodiments, a current-guiding structure may be provided including adjacent high and low contact areas. For some embodiments, a second current path (in addition to a current path between an n-contact pad and a substrate) may be provided. For some embodiments, both a current-guiding structure and second current path may be provided.
    Type: Grant
    Filed: August 26, 2013
    Date of Patent: April 22, 2014
    Assignee: SemiLEDS Optoelectronics Co., Ltd.
    Inventors: Wen-Huang Liu, Chen-Fu Chu, Jiunn-Yi Chu, Chao-Chen Cheng, Hao-Chun Cheng, Feng-Hsu Fan, Yuan-Hsiao Chang
  • Patent number: 8685764
    Abstract: Techniques for fabricating contacts on inverted configuration surfaces of GaN layers of semiconductor devices are provided. An n-doped GaN layer may be formed with a surface exposed by removing a substrate on which the n-doped GaN layer was formed. The crystal structure of such a surface may have a significantly different configuration than the surface of an as-deposited p-doped GaN layer.
    Type: Grant
    Filed: June 12, 2007
    Date of Patent: April 1, 2014
    Assignee: SemiLEDs Optoelectronics Co., Ltd.
    Inventors: Chen-Fu Chu, Wen-Huang Liu, Jiunn-Yi Chu, Chao-Chen Cheng, Hao-Chun Cheng, Feng-Hsu Fan, Trung Tri Doan
  • Publication number: 20140051197
    Abstract: A method for fabricating a vertical light emitting diode (VLED) die includes the steps of: providing a substrate; forming an epitaxial structure on the substrate; forming an electrically insulative insulation layer covering the lateral surfaces of the epitaxial structure; forming an electrically non-conductive material on the electrically insulative insulation layer; and forming a mirror on the p-doped layer, with the electrically insulative insulation layer configured to protect the epitaxial structure during formation of the mirror.
    Type: Application
    Filed: October 28, 2013
    Publication date: February 20, 2014
    Applicant: SemiLEDS Optoelectronics Co., Ltd.
    Inventors: FENG-HSU FAN, Trung Tri Doan, Chuong Anh Tran, Chen-Fu Chu, Chao-Chen Cheng, Jiunn-Yi Chu, Wen-Huang Liu, Hao-Chun Cheng, Jui-Kang Yen
  • Patent number: 8648370
    Abstract: The invention relates to a wafer-type light emitting device having a substrate, one or more light emitting semiconductors formed on the substrate, one or more frames provided over the one or more light emitting semiconductors, and one or more wavelength-converting layers applied on the one or more light emitting semiconductors and confined by the one or more frames, wherein the wafer-type light emitting device is diced into a plurality of separate light emitting units.
    Type: Grant
    Filed: May 27, 2011
    Date of Patent: February 11, 2014
    Assignee: Semileds Optoelectronics Co., Ltd.
    Inventors: Wen-Huang Liu, Yuan-Hsiao Chang, Hung-Jen Kao, Chung-Che Dan, Feng-Hsu Fan, Chen-Fu Chu
  • Patent number: 8614453
    Abstract: The invention relates to a chip-type light emitting device including one or more light emitting semiconductors and one or more frames provided over a top of the one or more light emitting semiconductors.
    Type: Grant
    Filed: May 27, 2011
    Date of Patent: December 24, 2013
    Assignee: SemiLEDS Optoelectronics Co., Ltd.
    Inventors: Wen-Huang Liu, Chung-Che Dan, Yuan-Hsiao Chang, Hung-Jen Kao
  • Patent number: 8614449
    Abstract: Techniques for fabricating metal devices, such as vertical light-emitting diode (VLED) devices, power devices, laser diodes, and vertical cavity surface emitting laser devices, are provided. Devices produced accordingly may benefit from greater yields and enhanced performance over conventional metal devices, such as higher brightness of the light-emitting diode and increased thermal conductivity. Moreover, the invention discloses techniques in the fabrication arts that are applicable to GaN-based electronic devices in cases where there is a high heat dissipation rate of the metal devices that have an original non- (or low) thermally conductive and/or non- (or low) electrically conductive carrier substrate that has been removed.
    Type: Grant
    Filed: October 11, 2006
    Date of Patent: December 24, 2013
    Assignee: SemiLEDs Optoelectronics Co., Ltd.
    Inventors: Feng-Hsu Fan, Trung Tri Doan, Chuong Anh Tran, Chen-Fu Chu, Chao-Chen Cheng, Jiunn-Yi Chu, Wen-Huang Liu, Hao-Chun Cheng, Jui-Kang Yen