Abstract: A light emitting diode (LED) utilizes an adhesive layer to adhere a light emitting layer to a substrate. The LED further comprises an electrode buffer layer to enhance the adhesion between the electrode and the light emitting diode, and thus to improve the yield rate of the LED.

Abstract: A light-emitting diode array includes a substrate, an adhesive layer formed on the substrate, and a plurality of electrically connected epitaxial light-emitting stack layer disposed on the adhesive layer. Each of the epitaxial light-emitting stack layer has a P-contact and an N-contact coplanar to the P-contact. The light-emitting diode array has improved heat ventilation characteristics.

Abstract: Methods are provided for fabricating a semiconductor light-emitting diode (LED) device by providing an LED wafer assembly having an LED stack and selectively roughening and/or texturing a light-emitting surface of the LED stack's n-doped layer. In this manner, light extraction from the LED device is improved.

Abstract: Techniques for controlling current flow in semiconductor devices, such as LEDs are provided. For some embodiments, a current guiding structure may be provided including adjacent high and low contact areas. For some embodiments, a second current path (in addition to a current path between an n-contact pad and a metal alloy substrate) may be provided. For some embodiments, both a current guiding structure and second current path may be provided.

Abstract: A vertical light-emitting diode (VLED) structure with an omni-directional reflector (ODR) that may offer increased light extraction and greater luminous efficiency when compared to conventional VLEDs is provided.

Abstract: Techniques for dicing wafer assemblies containing multiple metal device dies, such as vertical light-emitting diode (VLED), power device, laser diode, and vertical cavity surface emitting laser device dies, are provided. Devices produced accordingly may benefit from greater yields and enhanced performance over conventional metal devices, such as higher brightness of the light-emitting diode and increased thermal conductivity. Moreover, such techniques are applicable to GaN-based electronic devices in cases where there is a high heat dissipation rate of the metal devices that have an original non- (or low) thermally conductive and/or non- (or low) electrically conductive carrier substrate that has been removed.

Abstract: Methods for fabricating light-emitting diode (LED) array structures comprising multiple vertical LED stacks coupled to a single metal substrate is provided. The LED array structure may comprise two, three, four, or more LED stacks arranged in any configuration. Each of the LED stacks may have an individual external connection to make a common anode array since the p-doped regions of the LED stacks are all coupled to the metal substrate, or some to all of the n-doped regions of the LED stacks may be electrically connected to create a parallel LED array. Such LED arrays may offer better heat conduction and improved matching of LED characteristics (e.g., forward voltage and emission wavelength) between the individual LED stacks compared to conventional LED arrays.

Abstract: Systems and methods are disclosed for fabricating a semiconductor light-emitting diode (LED) device by forming an n-doped gallium nitride (n-GaN) layer on the LED device and roughening the surface of the n-GaN layer to extract light from an interior of the LED device.

Abstract: A white light source using solid state technology, as well as general backlight units and liquid crystal displays (LCDs) that may incorporate such a white light source, are provided. The white light source described herein utilizes a monochrome light-emitting diode (LED) and a wavelength-converting layer having fluorescent materials to produce a substantially uniform broadband optical spectrum visible as white light. Being constructed on a metal substrate, the white light source may also provide for an improved heat transfer path over conventional solid state white light sources.

Abstract: Techniques for fabricating metal devices, such as vertical light-emitting diode (VLED) devices, power devices, laser diodes, and vertical cavity surface emitting laser devices, are provided. Devices produced accordingly may benefit from greater yields and enhanced performance over conventional metal devices, such as higher brightness of the light-emitting diode and increased thermal conductivity. Moreover, the invention discloses techniques in the fabrication arts that are applicable to GaN-based electronic devices in cases where there is a high heat dissipation rate of the metal devices that have an original non- (or low) thermally conductive and/or non- (or low) electrically conductive carrier substrate that has been removed.

Abstract: Techniques for fabricating contacts on inverted configuration surfaces of GaN layers of semiconductor devices are provided. An n-doped GaN layer may be formed with a surface exposed by removing a substrate on which the n-doped GaN layer was formed. The crystal structure of such a surface may have a significantly different configuration than the surface of an as-deposited p-doped GaN layer.

Abstract: A vertical light-emitting diode (VLED) structure with a eutectic layer is described. The eutectic layer improves the heat conductivity of the device, thereby leading to increased brightness and higher luminous efficiency. The eutectic bonds of this layer also improve the reliability of the VLED structure since they have a lower coefficient of thermal expansion (CTE). A metal protective layer may be included to prevent diffusion of the eutectic layer thereby increasing the reliability and lifetime of the VLED structure. A reflective layer and/or a patterned surface may be added to this structure to further enhance the emitted light and increase the luminous efficiency.

Abstract: A Flip-chip light-emitting device with integral micro-reflector. The flip-chip light-emitting device emits reflected light provided by a light-emitting layer. The micro-reflector reflects light that might otherwise be lost to internal refraction and absorption, so as to increase light-emitting efficiency.

Abstract: Systems and methods are disclosed for fabricating a semiconductor light-emitting diode (LED) device by forming an n-doped gallium nitride (n-GaN) layer on the LED device and roughening the surface of the n-GaN layer to extract light from an interior of the LED device.

Abstract: A light-emitting device includes a compound substrate including a high thermal conductive layer and a substrate disposed around the high thermal conductive layer, an adhesive layer formed on the compound substrate, and a light-emitting stack layer formed on the adhesive layer. Therefore, problems in cutting a metal layer in a grain cutting process are solved.

Abstract: A light emitting diode having an adhesive layer and a reflective layer and a manufacturing method thereof featured by adhering together a light emitting diode stack and a substrate having a reflective metal layer by use of a transparent adhesive layer so that the light rays directed to the reflective metal layer can be reflected therefrom to improve the brightness of the light emitting diode.

Abstract: A nitride light-emitting device having an adhesive reflecting layer includes a transparent adhesive layer, a nitride light-emitting stack layer and a metal reflecting layer. The transparent adhesive layer adheres the nitride light-emitting stack layer and the metal reflecting layer. Therefore, the metal reflecting layer can reflect light emitted from the light-emitting stack layer to increase the brightness of the nitride light-emitting device.

Abstract: A semiconductor light emitting device including a substrate, a semiconductor light emitting stack, a first electrode, a first transparent oxide conductive layer and a second electrode is provided. The semiconductor light emitting stack is disposed on the substrate and has a first surface region and a second surface region. The first electrode is disposed on the first surface region. The first transparent oxide conductive layer is disposed on the second surface region. The second electrode is disposed on the first transparent oxide conductive layer. The area of the light emitting device is larger than 2.5×105 ?m2, and the distance between the first electrode and the second electrode is between 150 ?m and 250 ?m essentially, and the area of the first electrode and the second electrode is 15%˜25% of that of the light emitting layer.