Abstract: The present application discloses a group-III nitride semiconductor device, which comprises a substrate, a buffer layer, a semiconductor stack structure, and a passivation film. The buffer layer is disposed on the substrate. The semiconductor stack structure is disposed on the buffer layer and comprises a gate, a source, and a drain. In addition, a gate insulating layer is disposed between the gate and the semiconductor stack structure for forming a HEMT. The passivation film covers the HEMT and includes a plurality of openings corresponding to the gate, the source, and the drain, respectively. The material of the passivation film is silicon oxynitride.

Abstract: The present application discloses a group-III nitride semiconductor device, which comprises a substrate, a buffer layer, a semiconductor stack structure, and a passivation film. The buffer layer is disposed on the substrate. The semiconductor stack structure is disposed on the buffer layer and comprises a gate, a source, and a drain. In addition, a gate insulating layer is disposed between the gate and the semiconductor stack structure for forming a HEMT. The passivation film covers the HEMT and includes a plurality of openings corresponding to the gate, the source, and the drain, respectively. The material of the passivation film is silicon oxynitride.

Abstract: The present invention discloses a group-III nitride semiconductor device, which comprises a substrate, a buffer layer, a semiconductor stack structure, and a passivation film. The buffer layer is disposed on the substrate. The semiconductor stack structure is disposed on the buffer layer and comprises a gate, a source, and a drain. In addition, a gate insulating layer is disposed between the gate and the semiconductor stack structure for forming a HEMT. The passivation film covers the HEMT and includes a plurality of openings corresponding to the gate, the source, and the drain, respectively. The material of the passivation film is silicon oxynitride.

Abstract: The present invention discloses a group-III nitride semiconductor device, which comprises a substrate, a buffer layer, a semiconductor stack structure, and a passivation film. The buffer layer is disposed on the substrate. The semiconductor stack structure is disposed on the buffer layer and comprises a gate, a source, and a drain. In addition, a gate insulating layer is disposed between the gate and the semiconductor stack structure for forming a HEMT. The passivation film covers the HEMT and includes a plurality of openings corresponding to the gate, the source, and the drain, respectively. The material of the passivation film is silicon oxynitride.

Abstract: The present invention discloses a group-III nitride semiconductor device, which comprises a substrate, a buffer layer, a semiconductor stack structure, and a passivation film. The buffer layer is disposed on the substrate. The semiconductor stack structure is disposed on the buffer layer and comprises a gate, a source, and a drain. In addition, a gate insulating layer is disposed between the gate and the semiconductor stack structure for forming a HEMT. The passivation film covers the HEMT and includes a plurality of openings corresponding to the gate, the source, and the drain, respectively. The material of the passivation film is silicon oxynitride.

Abstract: An end cap for LED tube lamp along with the LED tube lamp adopting thereof is disclosed. LED tube lamp includes a lamp tube. One end of the lamp tube is attached to the end cap; a LED light bar is disposed inside the lamp tube. The end cap includes an insulating tubular part, sleeved with the end of the lamp tube and a magnetic object disposed between an inner circumferential surface of the insulating tubular part and the end of the lamp tube. The magnetic object being of a magnetic metal member and the lamp tube are adhesively bonded by a hot melt adhesive. An inner circumferential surface of the magnetic metal member can be fully covered by the hot melt adhesive. Magnetic metal member can be in the structure of a circular or oval ring, with at least one opening, and has indentation structure on a surface thereof.

Abstract: An LED tube lamp having an end cap and a lamp tube is disclosed. The end cap includes an electrically insulating tubular part, sleeved with an end of the lamp tube, and a magnetic metal object disposed between an inner circumferential surface of the electrically insulating tubular part and the end of lamp tube. The electrically insulating tubular part having an inner circumferential surface with a plurality of protruding portions formed thereon and extending inwardly in a radial direction of the electrically insulating tubular part. Each of the protruding portions is disposed between an outer circumferential surface of the magnetic metal member and the inner circumferential surface of the electrically insulating tubular part, thereby forming a space therebetween, in which a hot melt adhesive is filled so that the end cap and the end of the lamp tube are adhesively bonded.

Abstract: An end cap for LED tube lamp along with the LED tube lamp adopting thereof is disclosed. LED tube lamp includes a lamp tube. One end of the lamp tube is attached to the end cap; a LED light bar is disposed inside the lamp tube. The end cap includes an insulating tubular part, sleeved with the end of the lamp tube and a magnetic object disposed between an inner circumferential surface of the insulating tubular part and the end of the lamp tube. The magnetic object being of a magnetic metal member and the lamp tube are adhesively bonded by a hot melt adhesive. An inner circumferential surface of the magnetic metal member can be fully covered by the hot melt adhesive. Magnetic metal member can be in the structure of a circular or oval ring, with at least one opening, and has indentation structure on a surface thereof.

Abstract: An LED tube lamp having an end cap and a lamp tube is disclosed. The end cap includes an electrically insulating tubular part, sleeved with an end of the lamp tube, and a magnetic metal object disposed between an inner circumferential surface of the electrically insulating tubular part and the end of lamp tube. The electrically insulating tubular part having an inner circumferential surface with a plurality of protruding portions formed thereon and extending inwardly in a radial direction of the electrically insulating tubular part. Each of the protruding portions is disposed between an outer circumferential surface of the magnetic metal member and the inner circumferential surface of the electrically insulating tubular part, thereby forming a space therebetween, in which a hot melt adhesive is filled so that the end cap and the end of the lamp tube are adhesively bonded.

Abstract: The present invention discloses a group-III nitride semiconductor device, which comprises a substrate, a buffer layer, a semiconductor stack structure, and a passivation film. The buffer layer is disposed on the substrate. The semiconductor stack structure is disposed on the buffer layer and comprises a gate, a source, and a drain. In addition, a gate insulating layer is disposed between the gate and the semiconductor stack structure for forming a HEMT. The passivation film covers the HEMT and includes a plurality of openings corresponding to the gate, the source, and the drain, respectively. The material of the passivation film is silicon oxynitride.

Abstract: A light-emitting diode (LED) tube lamp comprises a lamp tube, a first rectifying circuit, a filtering circuit and an LED driving module. The lamp tube has a first pin and a second pin for receiving an external driving signal. The first rectifying circuit is coupled to the first and second pins, for rectifying the external driving signal to produce a rectified signal. The filtering circuit is coupled to the first rectifying circuit, for filtering the rectified signal to produce a filtered signal. The LED driving module is coupled to the filtering circuit to receive the filtered signal for emitting light. Wherein, the filtering circuit includes a capacitor and an inductor connected in parallel and between one of the first and second pins and the first rectifying circuit, and the parallel-connected capacitor and inductor are configured for presenting a peak equivalent impedance to the external driving signal at a specific frequency.

Abstract: An exemplary light emitting diode includes a light emitting diode chip, two optical wavelength converting layers, and an encapsulant layer. The light emitting diode chip has an light emitting surface. The light emitting diode chip is used to emit a monochromatic light from the light emitting surface. The light emitting surface includes a first region, a second region, and a third region. The two optical wavelength converting layers covers the first and the third regions of the light emitting surface. The two optical wavelength converting layers are configured for converting the monochromatic light received from the light emitting diode chip and emitting light with a converted wavelength from the light emitting diode. The encapsulant layer covers the second region of the light emitting surface for directing light therefrom.

Abstract: A solid state light emitting device includes a laminated substrate structure (120), an LED chip (30), a transparent capsulation material (50) and an electric component (40). The laminated substrate structure includes a first substrate (10) and a second substrate (20) attached to each other by a sintering process. The first substrate has a mounting surface (100) and a receiving through hole (11) defined in the mounting surface thereof. The LED chip is mounted on the mounting surface of the first substrate. The transparent capsulation material envelops the LED chip therein. The electric component is received in the receiving hole and mounted on the second substrate. The electric component is located below the mounting surface of the first substrate.

Abstract: An illuminating device includes a circuit board, a light source, and a thermoelectric cooler. The circuit board has a first surface and a second surface at an opposite side of the circuit board to the first surface. The light source is electrically mounted on the first surface of the circuit board. The thermoelectric cooler is attached on the second surface of the circuit board.

Abstract: An exemplary internally focusing lens system includes, in order from the object side to the image side, a first lens group with positive refractive power, a second lens group with negative refractive power, and a third lens group with positive refractive power. The third lens group includes one lens element. The second lens group is movable toward the image side and the first and third lens groups remain stationary during focusing of the lens system from an infinitely distant object to a nearby object.

Abstract: An exemplary outdoor lamp includes a light source, a light-pervious cover, and a heating element. The light source is configured for emitting light. The light-pervious cover is for transmission of the light emitted from the light source therethrough. The heating element is in thermal contact with the light-pervious cover and is configured for heating the light-pervious cover.

Abstract: An exemplary solid-state light emitting device includes a substrate, a light emitting structure, a first electrode and a second electrode have opposite polarities with each other. The light emitting structure includes a first-type semiconductor layer, a second-type semiconductor layer and an active layer between the first-type semiconductor layer and the second-type semiconductor layer. The first electrode electrically is connected with the first-type semiconductor layer. The first electrode includes a first contact pad and a current induced electrode spaced apart and insulated from each other. The second electrode has an opposite polarity with respect to the first electrode. The second electrode includes a transparent conductive layer formed on and electrically connected with the second-type semiconductor layer and a metallic conductive layer formed on the transparent conductive layer and in electrical contact therewith.

Abstract: An LED includes a substrate having a substantially flat substrate surface, a plurality of electrodes extending through the substrate, an LED chip configured for emitting light, a first and a second coplanar reflective layers formed on the surface, and a light pervious encapsulation member mounted on the substrate surface. The light pervious encapsulation member covers the LED chip and the first reflective layer and a portion of the second reflective layer. The LED chip is mounted on the substrate surface and electrically connected with the electrodes. The first reflective layer and the second reflective layer are configured for reflecting the light emitted from the LED chip.

Abstract: An exemplary camera device includes an optical lens module, an image sensor and a light emitting module. The optical lens module is for forming an image of an object on an image plane associated therewith. The image sensor is disposed on the image plane of the optical lens module and for capturing the image formed by the optical lens module. The light emitting module includes a transflective optical element and a light emitting element. The transflective optical element is located between the optical lens module and the image sensor. The light emitting element faces towards the transflective optical element.

Abstract: An exemplary illuminating device includes a light source container, a light source and a drying chamber. The light source container includes a receiving room. The light source is received in the receiving room. The drying chamber has desiccant received therein and communicates with the receiving room. The desiccant is configured for absorbing moisture in the illuminating device, therefore, drying the illuminating device.