Abstract: An apparatus for releasing a molded lens from a deformable mold includes a shear ring for temporarily retaining an annular portion of the deformable mold outside a periphery of the lens and a plunger for deforming an annular section of the deformable mold within the periphery of the lens. The apparatus can be employed to release a non-hydrated hydrogel lens from a deformable mold section.

Abstract: Eigensolutions for use in determining the profile of a structure formed on a semiconductor wafer can be approximated by obtaining a known set of eigenvectors associated with a first section of a hypothetical profile of the structure, where the known set of eigenvectors is used to generate a simulated diffraction signal for the hypothetical profile. A known characteristic matrix associated with a second section of a hypothetical profile is obtained, and an approximated set of eigenvalues for the second section is determined based on the known set of eigenvectors associated with the first section and the known characteristic matrix associated with the second section.

Abstract: A fabrication tool can be controlled using a support vector machine. A profile model of the structure is obtained. The profile model is defined by profile parameters that characterize the geometric shape of the structure. A set of values for the profile parameters is obtained. A set of simulated diffraction signals is generated using the set of values for the profile parameters, each simulated diffraction signal characterizing the behavior of light diffracted from the structure. The support vector machine is trained using the set of simulated diffraction signals as inputs to the support vector machine and the set of values for the profile parameters as expected outputs of the support vector machine. After the support vector machine has been trained, a fabrication process is performed using the fabrication tool to fabricate the structure on the wafer. A measured diffraction signal off the structure is obtained. The measured diffraction signal is inputted into the trained support vector machine.

Abstract: A structure formed on a semiconductor wafer can be examined using a support vector machine. A profile model of the structure is obtained. The profile model is defined by profile parameters that characterize the geometric shape of the structure. A set of values for the profile parameters is obtained. A set of simulated diffraction signals is generated using the set of values for the profile parameters, each simulated diffraction signal characterizing the behavior of light diffracted from the structure. The support vector machine is trained using the set of simulated diffraction signals as inputs to the support vector machine and the set of values for the profile parameters as expected outputs of the support vector machine. A measured diffraction signal off the structure is obtained. The measured diffraction signal is inputted into the trained support vector machine. Values of profile parameters of the structure are obtained as an output from the trained support vector machine.

Abstract: A structure formed on a semiconductor wafer can be examined using a support vector machine. A profile model is defined by profile parameters that characterize the geometric shape of the structure. A training set of values for the profile parameters is obtained. A training set of simulated diffraction signals is generated using the training set of values for the profile parameters. The support vector machine is trained using the training set of values for the profile parameters. A simulated diffraction signal is generated using a set of values for the profile parameters as inputs to the trained support vector machine. A measured diffraction signal is compared to the simulated diffraction signal. When the signals match within one or more matching criteria, values of profile parameters of the structure are determined to be the set of values for the profile parameters used to generate the simulated diffraction signal.

Abstract: A fabrication tool can be controlled using a support vector machine. A profile model of the structure is obtained. The profile model is defined by profile parameters that characterize the geometric shape of the structure. A set of values for the profile parameters is obtained. A set of simulated diffraction signals is generated using the set of values for the profile parameters, each simulated diffraction signal characterizing the behavior of light diffracted from the structure. The support vector machine is trained using the set of simulated diffraction signals as inputs to the support vector machine and the set of values for the profile parameters as expected outputs of the support vector machine. After the support vector machine has been trained, a fabrication process is performed using the fabrication tool to fabricate the structure on the wafer. A measured diffraction signal off the structure is obtained. The measured diffraction signal is inputted into the trained support vector machine.

Abstract: A structure formed on a semiconductor wafer can be examined using a support vector machine. A profile model of the structure is obtained. The profile model is defined by profile parameters that characterize the geometric shape of the structure. A set of values for the profile parameters is obtained. A set of simulated diffraction signals is generated using the set of values for the profile parameters, each simulated diffraction signal characterizing the behavior of light diffracted from the structure. The support vector machine is trained using the set of simulated diffraction signals as inputs to the support vector machine and the set of values for the profile parameters as expected outputs of the support vector machine. A measured diffraction signal off the structure is obtained. The measured diffraction signal is inputted into the trained support vector machine. Values of profile parameters of the structure are obtained as an output from the trained support vector machine.

Abstract: A structure formed on a semiconductor wafer can be examined using a support vector machine. A profile model of the structure is obtained. The profile model is defined by profile parameters that characterize the geometric shape of the structure. A training set of values for the profile parameters is obtained. A training set of simulated diffraction signals is generated using the training set of values for the profile parameters, each simulated diffraction signal characterizing the behavior of light diffracted from the structure. The support vector machine is trained using the training set of values for the profile parameters as inputs to the support vector machine and the training set of simulated diffraction signals as expected outputs of the support vector machine. A measured diffraction signal off the structure is obtained. A simulated diffraction signal is generated using a set of values for the profile parameters as inputs to the trained support vector machine.

Abstract: Methods and apparatus for producing a copper layer on substrate in a flat panel display manufacturing process, where the copper is electrodelessly deposited on a substrate to form a copper interconnection layer. A copper solution containing: CuSO4 5H2O as a copper source, potassium sodium tartrate or trisodium citrate as a complexing agent, glyoxylate, glyoxilic acid or sodium phosphate as a reducing agent, a sulfur organic compound as a stabilizing agent, and a pH adjusting agent, is used to form the copper interconnection layer on the substrate.

Abstract: A system for cleaning a wafer. At least one first chuck roller is connected to a first roller base and includes a first annular groove. A second roller base opposes the first roller base. At least one second chuck roller is connected to the second roller base and includes a second annular groove. A sensing chuck roller is connected to the second roller base and includes a third annular groove corresponding to the first and second annular grooves. A cleaning member covers the third annular groove. A circumferential edge of the wafer is positioned in the first and second annular grooves and abuts the cleaning member. The first and second chuck rollers rotate the wafer, enabling the circumferential edge thereof to rub against the cleaning member.

Abstract: The number of diffraction orders to use in generating simulated diffraction signals for a two-dimensional structure in optical metrology is selected by generating a first simulated diffraction signal using a first number of diffraction orders and a hypothetical profile of the two-dimensional structure. A second simulated diffraction signal is generated using a second number of diffraction orders using the same hypothetical profile used to generate the first simulated diffraction signal, where the first and second numbers of diffraction orders are different. The first and second simulated diffraction signals are compared. Based on the comparison of the first and second simulated diffraction signals, a determination is made as to whether to select the first or second number of diffraction orders.

Abstract: A system for monitoring the battery capacitor is disclosed. The system comprises an ADC (analog to digital converter), a CPU, a ROM, a clock generator, a SMbus (smart management bus) interface. A series of RTC interrupt signals are generated by the clock generator and feeds to the CPU. When the CPU receives a RTC interrupt, the CPU runs a program in said ROM to calculate the remaining capacity of the battery and stores it into register or RAM according to the digital signal outputs from the ADC, which converts an analog signal of the battery into a digital signal. The SM bus interface then fetches the calculated results from the CPU and displays them by LED in terms of lighting, dark and flashing.