Patents by Inventor Wen Kai Lin
Wen Kai Lin has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20250138283Abstract: A coupled lens structure for a mixed/augmented reality system includes: a lens tube; a first lens with a first aspherical light input surface coupled to a lens-tube light input surface; a second lens with a second spherical light input surface optically coupled to a first spherical light output surface of the first lens; a third lens with a third spherical light input surface optically coupled to a second aspherical light output surface of the second lens; and a fourth lens with a fourth spherical light input surface optically coupled to a third spherical light output surface of the third lens and a fourth spherical light output surface coupled to a lens-tube light output surface. The coupled lens structure has volume of 2.1-3 cc, a lens-tube outer diameter of 12-13.5 mm, and a full angle of view not greater than 30 degrees, featuring an effective reduction in volume and weight.Type: ApplicationFiled: January 2, 2024Publication date: May 1, 2025Inventors: Ying-Shun SHIU, Guan-Wei HUANG, Jun-Yi YU, Wen-Hsin SUN, Wei-Chia SU, Wen-Kai LIN, Shao-Kui ZHOU, Yuan-Yan LIANG, Ching-Cherng SUN
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Publication number: 20250089281Abstract: Provided are a semiconductor structure and a manufacturing method thereof. The semiconductor structure includes a substrate including a fin portion, first and second doped regions having a first conductive type, first and second contacts, and first and second metal silicide layers. The fin portion protrudes from a surface of the substrate. The first doped region is disposed in the fin portion. The second doped region is disposed in the fin portion and connected to the first doped region. A doping concentration of the second doped region is greater than that of the first doped region. The first contact is disposed on the first doped region. The second contact is disposed on the second doped region. The first metal silicide layer is disposed between the first contact and the first doped region. The second metal silicide layer is disposed between the second contact and the second doped region.Type: ApplicationFiled: October 15, 2023Publication date: March 13, 2025Applicant: United Microelectronics Corp.Inventors: Wen-Kai Lin, Sheng-Yuan Hsueh, Kuo-Hsing Lee, Chih-Kai Kang
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Semiconductor device including multiple inner spacers with different etch rates and method of making
Patent number: 12249639Abstract: Improved inner spacers for semiconductor devices and methods of forming the same are disclosed.Type: GrantFiled: January 2, 2024Date of Patent: March 11, 2025Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.Inventors: Wen-Kai Lin, Che-Hao Chang, Chi On Chui, Yung-Cheng Lu -
Publication number: 20250071983Abstract: A method for fabricating a semiconductor device includes the steps of first providing a substrate having a transistor region and an one time programmable (OTP) capacitor region, forming a first fin-shaped structure on the transistor region and a second fin-shaped structure on the OTP capacitor region, and then performing an oxidation process to form a gate oxide layer on the first fin-shaped structure and the second fin-shaped structure. Preferably, the first fin-shaped structure and the second fin-shaped structure have different shapes under a cross-section perspective.Type: ApplicationFiled: September 24, 2023Publication date: February 27, 2025Applicant: UNITED MICROELECTRONICS CORP.Inventors: Kuo-Hsing Lee, Sheng-Yuan Hsueh, Yung-Chen Chiu, Chih-Kai Kang, Wen-Kai Lin
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Patent number: 12206012Abstract: A method includes performing an atomic layer deposition (ALD) process to form a dielectric layer on a wafer. The ALD process comprises an ALD cycle includes pulsing calypso ((SiCl3)2CH2), purging the calypso, pulsing ammonia, and purging the ammonia. The method further includes performing a wet anneal process on the dielectric layer, and performing a dry anneal process on the dielectric layer.Type: GrantFiled: May 28, 2021Date of Patent: January 21, 2025Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.Inventors: Wen-Kai Lin, Che-Hao Chang, Chi On Chui, Yung-Cheng Lu, Szu-Ying Chen
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Publication number: 20240395902Abstract: In an embodiment, a structure includes: a semiconductor substrate; a fin extending from the semiconductor substrate; a gate stack over the fin; an epitaxial source/drain region in the fin adjacent the gate stack; and a gate spacer disposed between the epitaxial source/drain region and the gate stack, the gate spacer including a plurality of silicon oxycarbonitride layers, each of the plurality of silicon oxycarbonitride layers having a different concentration of silicon, a different concentration of oxygen, a different concentration of carbon, and a different concentration of nitrogen.Type: ApplicationFiled: July 31, 2024Publication date: November 28, 2024Inventors: Chien-Chih Lin, Yen-Ting Chen, Wen-Kai Lin, Szu-Chi Yang, Shih-Hao Lin, Tsung-Hung Lee, Ming-Lung Cheng
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Publication number: 20240395893Abstract: A semiconductor device includes a plurality of nanostructures extending in a first direction above a semiconductor substrate and arranged in a second direction substantially perpendicular to the first direction and a gate structure extending in a third direction perpendicular to both the first and second directions, the gate structure surrounding each of the plurality of nanostructures. Each of the plurality of nanostructures has an outer region having a composition different from a composition of an inner region of each of the plurality of the nanostructures. The gate structure includes a plurality of high-k gate dielectric layers respectively surrounding the plurality of nanostructures, a work function layer surrounding each of the plurality of high-k gate dielectric layers and a fill metal layer surrounding the work function layer.Type: ApplicationFiled: July 31, 2024Publication date: November 28, 2024Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.Inventors: Wen-Kai LIN, Shih-Chiang CHEN, Po-Shao LIN, Wei-Yang LEE, Chia-Pin LIN, Yuan-Ching PENG
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Publication number: 20240387681Abstract: Semiconductor devices and methods of manufacture are presented in which spacers are manufactured on sidewalls of gates for semiconductor devices. In embodiments the spacers comprise a first seal, a second seal, and a contact etch stop layer, in which the first seal comprises a first shell along with a first bulk material, the second seal comprises a second shell along with a second bulk material, and the contact etch stop layer comprises a third bulk material and a second dielectric material.Type: ApplicationFiled: July 29, 2024Publication date: November 21, 2024Inventors: Wen-Kai Lin, Che-Hao Chang, Chi On Chui, Yung-Cheng Lu
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Patent number: 12142668Abstract: In an embodiment, a structure includes: a semiconductor substrate; a fin extending from the semiconductor substrate; a gate stack over the fin; an epitaxial source/drain region in the fin adjacent the gate stack; and a gate spacer disposed between the epitaxial source/drain region and the gate stack, the gate spacer including a plurality of silicon oxycarbonitride layers, each of the plurality of silicon oxycarbonitride layers having a different concentration of silicon, a different concentration of oxygen, a different concentration of carbon, and a different concentration of nitrogen.Type: GrantFiled: January 3, 2022Date of Patent: November 12, 2024Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.Inventors: Chien-Chih Lin, Yen-Ting Chen, Wen-Kai Lin, Szu-Chi Yang, Shih-Hao Lin, Tsung-Hung Lee, Ming-Lung Cheng
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Publication number: 20240332401Abstract: Embodiments include nanostructure devices and methods of forming nanostructure devices which include a treatment process to expand a sidewall spacer material to close a seam in the sidewall spacer material after deposition. The treatment process includes oxidation anneal and heat anneal to expand the sidewall spacer material and crosslink the open seam to form a closed seam, lower k-value, and decrease density.Type: ApplicationFiled: June 13, 2024Publication date: October 3, 2024Inventors: Li-Chi Yu, Cheng-I Chu, Chen-Fong Tsai, Yi-Rui Chen, Sen-Hong Syue, Wen-Kai Lin, Yoh-Rong Liu, Huicheng Chang, Yee-Chia Yeo
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Publication number: 20240297237Abstract: A method of forming a semiconductor device includes: forming a dummy gate structure over a nanostructure, where the nanostructure overlies a fin that protrudes above a substrate, where the nanostructure comprises alternating layers of a first semiconductor material and a second semiconductor material; forming openings in the nanostructure on opposing sides of the dummy gate structure, the openings exposing end portions of the first semiconductor material and end portions of the second semiconductor material; recessing the exposed end portions of the first semiconductor material to form first sidewall recesses; filling the first sidewall recesses with a multi-layer spacer film; removing at least one sublayer of the multi-layer spacer film to form second sidewall recesses; and forming source/drain regions in the openings after removing at least one sublayer, where the source/drain regions seal the second sidewall recesses to form sealed air gaps.Type: ApplicationFiled: May 10, 2024Publication date: September 5, 2024Inventors: Wen-Kai Lin, Yung-Cheng Lu, Che-Hao Chang, Chi On Chui
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Patent number: 12080775Abstract: A semiconductor device includes a plurality of nanostructures extending in a first direction above a semiconductor substrate and arranged in a second direction substantially perpendicular to the first direction and a gate structure extending in a third direction perpendicular to both the first and second directions, the gate structure surrounding each of the plurality of nano structures. Each of the plurality of nanostructures has an outer region having a composition different from a composition of an inner region of each of the plurality of the nanostructures. The gate structure includes a plurality of high-k gate dielectric layers respectively surrounding the plurality of nanostructures, a work function layer surrounding each of the plurality of high-k gate dielectric layers and a fill metal layer surrounding the work function layer.Type: GrantFiled: August 30, 2021Date of Patent: September 3, 2024Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.Inventors: Wen-Kai Lin, Shih-Chiang Chen, Po-Shao Lin, Wei-Yang Lee, Chia-Pin Lin, Yuan-Ching Peng
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Patent number: 12040382Abstract: Embodiments include nanostructure devices and methods of forming nanostructure devices which include a treatment process to expand a sidewall spacer material to close a seam in the sidewall spacer material after deposition. The treatment process includes oxidation anneal and heat anneal to expand the sidewall spacer material and crosslink the open seam to form a closed seam, lower k-value, and decrease density.Type: GrantFiled: May 17, 2021Date of Patent: July 16, 2024Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.Inventors: Li-Chi Yu, Cheng-I Chu, Chen-Fong Tsai, Yi-Rui Chen, Sen-Hong Syue, Wen-Kai Lin, Yoh-Rong Liu, Huicheng Chang, Yee-Chia Yeo
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Publication number: 20240194765Abstract: A method of manufacturing a semiconductor device includes forming a multi-layer stack of alternating first layers of a first semiconductor material and second layers of a second semiconductor material on a semiconductor substrate, forming a first recess through the multi-layer stack, and laterally recessing sidewalls of the second layers of the multi-layer stack. The sidewalls are adjacent to the first recess. The method further includes forming inner spacers with respective seams adjacent to the recessed second layers of the multi-layer stack and performing an anneal treatment on the inner spacers to close the respective seams.Type: ApplicationFiled: January 29, 2024Publication date: June 13, 2024Inventors: Yoh-Rong Liu, Wen-Kai Lin, Che-Hao Chang, Chi On Chui, Yung-Cheng Lu, Li-Chi Yu, Sen-Hong Syue
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Patent number: 12009407Abstract: A method of forming a semiconductor device includes: forming a dummy gate structure over a nanostructure, where the nanostructure overlies a fin that protrudes above a substrate, where the nanostructure comprises alternating layers of a first semiconductor material and a second semiconductor material; forming openings in the nanostructure on opposing sides of the dummy gate structure, the openings exposing end portions of the first semiconductor material and end portions of the second semiconductor material; recessing the exposed end portions of the first semiconductor material to form first sidewall recesses; filling the first sidewall recesses with a multi-layer spacer film; removing at least one sublayer of the multi-layer spacer film to form second sidewall recesses; and forming source/drain regions in the openings after removing at least one sublayer, where the source/drain regions seal the second sidewall recesses to form sealed air gaps.Type: GrantFiled: April 20, 2023Date of Patent: June 11, 2024Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.Inventors: Wen-Kai Lin, Yung-Cheng Lu, Che-Hao Chang, Chi On Chui
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Publication number: 20240153812Abstract: A method for fabricating a semiconductor device includes the steps of first forming a shallow trench isolation (STI) in a substrate, forming a first gate structure on the substrate and adjacent to the STI, forming a first doped region between the first gate structure and the STI, forming a second doped region between the first doped region and the first gate structure, forming a first contact plug on the first doped region, and then forming a second contact plug on the second doped region.Type: ApplicationFiled: December 4, 2022Publication date: May 9, 2024Applicant: UNITED MICROELECTRONICS CORP.Inventors: Wen-Kai Lin, Chi-Horn Pai, Sheng-Yuan Hsueh, Kuo-Hsing Lee, Chih-Kai Kang
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Publication number: 20240136428Abstract: Improved inner spacers for semiconductor devices and methods of forming the same are disclosed.Type: ApplicationFiled: January 2, 2024Publication date: April 25, 2024Inventors: Wen-Kai Lin, Che-Hao Chang, Chi On Chui, Yung-Cheng Lu
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Publication number: 20240113202Abstract: Embodiments of the present disclosure relate to a FinFET device having gate spacers with reduced capacitance and methods for forming the FinFET device. Particularly, the FinFET device according to the present disclosure includes gate spacers formed by two or more depositions. The gate spacers are formed by depositing first and second materials at different times of processing to reduce parasitic capacitance between gate structures and contacts introduced after epitaxy growth of source/drain regions.Type: ApplicationFiled: December 1, 2023Publication date: April 4, 2024Inventors: Wen-Kai Lin, Bo-Yu Lai, Li Chun Te, Kai-Hsuan Lee, Sai-Hooi Yeong, Tien-I Bao, Wei-Ken Lin
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Patent number: 11923432Abstract: A method of manufacturing a semiconductor device includes forming a multi-layer stack of alternating first layers of a first semiconductor material and second layers of a second semiconductor material on a semiconductor substrate, forming a first recess through the multi-layer stack, and laterally recessing sidewalls of the second layers of the multi-layer stack. The sidewalls are adjacent to the first recess. The method further includes forming inner spacers with respective seams adjacent to the recessed second layers of the multi-layer stack and performing an anneal treatment on the inner spacers to close the respective seams.Type: GrantFiled: January 3, 2023Date of Patent: March 5, 2024Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.Inventors: Yoh-Rong Liu, Wen-Kai Lin, Che-Hao Chang, Chi On Chui, Yung-Cheng Lu, Li-Chi Yu, Sen-Hong Syue
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Patent number: 11901439Abstract: Improved inner spacers for semiconductor devices and methods of forming the same are disclosed.Type: GrantFiled: July 27, 2022Date of Patent: February 13, 2024Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.Inventors: Wen-Kai Lin, Che-Hao Chang, Chi On Chui, Yung-Cheng Lu