Abstract: A slurry solution for a Chemical Mechanical Polishing (CMP) process includes a wetting agent, a stripper additive that comprises at least one of: N-methyl-2-pyrrolidone (NMP), dimethyl sulfoxide (DMSO), sulfolane, and dimethylformamide (DMF), and an oxidizer additive comprising at least one of: hydrogen peroxide (H2O2), ammonium persulfate ((NH4)2S2O8), peroxymonosulfuric acid (H2SO5), ozone (O3) in de-ionized water, and sulfuric acid (H2SO4).

Abstract: A chemical-mechanical planarization device and a method for using a chemical-mechanical planarization device in conjunction with a semiconductor substrate is provided. In accordance with some embodiments, the device includes: a pad disposed over a rotatable platen; a carrier head disposed over the pad and configured to retain a semiconductor substrate between the pad and the carrier head; a tank configured to retain a liquid containing composition; at least one tube fluidly coupled with the tank, the at least one tube comprising a photocatalyst therein; a nozzle fluidly coupled with the tank through the at least one tube and configured to supply the liquid containing composition onto the pad; and a light source configured to provide light to irradiate the photocatalyst, and the liquid containing composition passing through the at least one tube.

Abstract: The present disclosure relates to a method of forming an interconnect structure. The method can include providing a semiconductor substrate; depositing a photoresist and a BARC layer on the semiconductor substrate; forming an opening in the photoresist and the BARC layer and a portion of the semiconductor substrate; depositing a conductive material to fill the opening; and planarizing the conductive material and the semiconductor substrate.

Abstract: Wafer taping apparatuses and methods are provided for determining whether taping defects are present on a semiconductor wafer, based on image information acquired by an imaging device. In some embodiments, a method includes applying an adhesive tape on a surface of a semiconductor wafer. An imaging device acquires image information associated with the adhesive tape on the semiconductor wafer. The presence or absence of taping defects is determined by defect recognition circuitry based on the acquired image information.

Abstract: The present disclosure describes an apparatus and a method for a chemical mechanical polishing (CMP) process that recycles used slurry as another slurry supply. The apparatus includes a pad on a rotation platen, a first feeder and a second feeder where each of the first and the second feeder is configured to dispense a slurry on the pad, and a flotation module configured to process a first fluid sprayed from the pad. The flotation module further includes an outlet fluidly connected to the second feeder and configured to output a second fluid, and a first tank configured to store a plurality of chemicals where the plurality of chemicals include a frother and a collector configured to chemically bond with chemicals in the first fluid.

Abstract: The present disclosure describes an apparatus and a method for a chemical mechanical polishing (CMP) process that recycles used slurry as another slurry supply. The apparatus includes a pad on a rotation platen, a first feeder and a second feeder where each of the first and the second feeder is fluidly connected to a respective flow regulator and configured to dispense a first and a second slurry on the pad, a flotation module configured to provide a recycled slurry, and a detection module configured to detect a polishing characteristic associated with polishing the substrate. The flotation module further includes an inlet configured to provide a fluid sprayed from the pad and a tank configured to store chemicals that include a frother and a collector configured to chemically bond with the fluid.

Abstract: A knuckle-print identification system includes a database, a knuckle-print capturing unit and a processing unit electrically connected to the database and the knuckle-print capturing unit. The database stores a comparison data module. The comparison data module includes two end positions of each of all first knuckle-prints and two end positions of each of all second knuckle-prints of three finger portions in a close state, and data representing relative relationships thereof. The knuckle-print capturing unit captures knuckle-print images of the three finger portions.

Abstract: An anti-theft structure of a dual-locking lock includes a lock body, an electronic lock, a key lock and a key. The electronic lock is disposed on the lock body. The key lock includes a lock head and a plug cap. The lock head is combined with the lock body and has a front side surface with a key hole. The plug cap covers over the front side surface of the lock head, and has an inner portion with a chamber, and a circumferential surface provided with a window communicating with the chamber. The key includes a head and an extension arm perpendicularly extending from one side of the head. The head can be put into the chamber from the window and then inserted into the key hole and then rotated by an angle to perform unlocking or locking. With the above-mentioned structure, the good anti-theft effect is obtained.

Abstract: A chemical-mechanical planarization device and a method for using a chemical-mechanical planarization device in conjunction with a semiconductor substrate is provided. In accordance with some embodiments, the device includes: a pad disposed over a rotatable platen; a carrier head disposed over the pad and configured to retain a semiconductor substrate between the pad and the carrier head; a tank configured to retain a liquid containing composition; at least one tube fluidly coupled with the tank, the at least one tube comprising a photocatalyst therein; a nozzle fluidly coupled with the tank through the at least one tube and configured to supply the liquid containing composition onto the pad; and a light source configured to provide light to irradiate the photocatalyst, and the liquid containing composition passing through the at least one tube.

Abstract: Some embodiments are directed to a wafer polishing tool. The wafer polishing tool includes a first polisher, a second polisher downstream of the first polisher, a third polisher downstream of the second polisher, and a fourth polisher downstream of the third polisher. The first polisher receives a wafer having a front side and a back side with integrated circuit component devices disposed on the front side of the wafer, and polishes a center region on the back side of the wafer. The second polisher receives the wafer via transporting equipment and buffs the center region of the back side of the wafer. The third polisher receives the wafer via the transporting equipment and polishes a back side edge region of the wafer. The fourth polisher receives the wafer via the transporting equipment and buffs the back side edge region of the wafer.

Abstract: A method of manufacturing an integrated circuit device is provided. A first feature, which has a first susceptibility to damage by chemical mechanical processing (CMP), is formed at a first height as measured from an upper surface of the substrate. A second feature, which has a second susceptibility to damage by the CMP, is formed at a second height as measured from the upper surface of the substrate and is laterally spaced from the first feature by a recess. The second height is greater than the first height, and the second susceptibility is less than the first susceptibility. A sacrificial coating is formed in the recess over an uppermost surface of the first feature. CMP is performed to remove a first portion of the sacrificial coating and expose an upper surface of the second feature while leaving a second portion of the sacrificial coating in place over the first feature.

Abstract: An IC device manufacturing process effectuates a planar recessing of material that initially varies in height across a substrate. The method includes forming a polymer coating, CMP to form a planar surface, then plasma etching to effectuate a planar recessing of the polymer coating. The material can be recessed together with the polymer coating, or subsequently with the recessed polymer coating providing a mask. Any of the material above a certain height is removed. Structures that are substantially below that certain height can be protected from contamination and left intact. The polymer can be a photoresist. The polymer can be provided with suitable adhesion and uniformity for the CMP process through a two-step baking process and by exhausting the baking chamber from below the substrate.

Abstract: A fingerprint recognition system of a portable electronic device is provided, including a database, a detecting unit and a processing unit which are electrically connected to the processing unit, the database including a contrast data module which includes fingerprint characteristic data and knuckle characteristic data of three preset fingers, the detecting unit for detecting fingerprints and knuckles to be inspected of three fingers to be inspected and transmitting a signal to the processing unit, the processing unit transferring the signal into a real-time data module, the processing unit contrasting the real-time data module and the contrast data module to obtain a verification match rate, the processing unit having a preset match rate, wherein when the verification match rate is greater than or equal to the preset match rate, the processing unit determines that the three fingers to be inspected match the three preset fingers.

Abstract: A slurry solution for a Chemical Mechanical Polishing (CMP) process includes a wetting agent, a stripper additive that comprises at least one of: N-methyl-2-pyrrolidone (NMP), dimethyl sulfoxide (DMSO), sulfolane, and dimethylformamide (DMF), and an oxidizer additive comprising at least one of: hydrogen peroxide (H2O2), ammonium persulfate ((NH4)2S2O8), peroxymonosulfuric acid (H2SO5), ozone (O3) in de-ionized water, and sulfuric acid (H2SO4).

Abstract: Some embodiments are directed to a wafer polishing tool. The wafer polishing tool includes a first polisher, a second polisher downstream of the first polisher, a third polisher downstream of the second polisher, and a fourth polisher downstream of the third polisher. The first polisher receives a wafer having a front side and a back side with integrated circuit component devices disposed on the front side of the wafer, and polishes a center region on the back side of the wafer. The second polisher receives the wafer via transporting equipment and buffs the center region of the back side of the wafer. The third polisher receives the wafer via the transporting equipment and polishes a back side edge region of the wafer. The fourth polisher receives the wafer via the transporting equipment and buffs the back side edge region of the wafer.

Abstract: A method for performing a Chemical Mechanical Polishing (CMP) process includes applying a CMP slurry solution to a surface of a hardened fluid material on a substrate, the solution comprising an additive to change a bonding structure on the surface of the hardened fluid material. The method further includes polishing the surface of the hardened fluid material with a polishing head.

Abstract: A wafer polishing process includes polishing a central area on the back side of a wafer, polishing a peripheral area on the back side of the wafer, buffing the central area, and buffing the peripheral area. The process can significantly reduce scratch-related wafer breakage, can correct focus spots on wafers, and can replace cleaning processes that use chemical etchants. Polishing and buffing can include polishing and buffing the bevel region. Further improvements include polishing with abrasive pads having a soft backing, polishing or buffing with pads having relatively soft abrasive particles, polishing or buffing with abrasive pads made from abrasive particles that have been sorted and selected for regularity of shape, irrigating the surface being polished or buffed with an aqueous solution that includes a friction-reducing agent, and buffing with abrasive pads having 20k or finer grit or non-abrasive pads.

Abstract: The present disclosure provides a method of manufacturing an integrated circuit device in some embodiments. In the method, a semiconductor substrate is processed through a series of operations to form a topographically variable surface over the semiconductor substrate. The topographically variable surface varies in height across the semiconductor substrate. A polymeric bottom anti-reflective coating (BARC) is provided over the topographically variable surface. Chemical mechanical polishing is performed to remove a first portion of the BARC, and etching effectuates a top-down recessing of the BARC.

Abstract: A wafer polishing process includes polishing a central area on the back side of a wafer, polishing a peripheral area on the back side of the wafer, buffing the central area, and buffing the peripheral area. The process can significantly reduce scratch-related wafer breakage, can correct focus spots on wafers, and can replace cleaning processes that use chemical etchants. Polishing and buffing can include polishing and buffing the bevel region. Further improvements include polishing with abrasive pads having a soft backing, polishing or buffing with pads having relatively soft abrasive particles, polishing or buffing with abrasive pads made from abrasive particles that have been sorted and selected for regularity of shape, irrigating the surface being polished or buffed with an aqueous solution that includes a friction-reducing agent, and buffing with abrasive pads having 20k or finer grit or non-abrasive pads.

Abstract: An IC device manufacturing process effectuates a planar recessing of material that initially varies in height across a substrate. The method includes forming a polymer coating, CMP to form a planar surface, then plasma etching to effectuate a planar recessing of the polymer coating. The material can be recessed together with the polymer coating, or subsequently with the recessed polymer coating providing a mask. Any of the material above a certain height is removed. Structures that are substantially below that certain height can be protected from contamination and left intact. The polymer can be a photoresist. The polymer can be provided with suitable adhesion and uniformity for the CMP process through a two-step baking process and by exhausting the baking chamber from below the substrate.