Abstract: A real-time system adapted to a PVD apparatus for monitoring and controlling film uniformity is described. The system includes a shielding plate, a monitoring device, and a data processing program. The shielding plate is disposed on an inner wall of a reaction chamber above a wafer stage. An opening in the center of the shielding plate exposes the wafer. The monitoring device including a scanner and a sensor respectively disposed on opposite sidewalls of the reaction chamber between the shielding plate and the wafer stage is used for measuring the flux of the particles on every portion of the wafer to acquire real-time uniformity data including a function of the wafer position and the flux. The data processing program compares the real-time uniformity data and reference uniformity data, and a feedback signal is outputted to the PVD apparatus to adjust the process parameter thereof for controlling film uniformity.

Abstract: A gas delivering system for an in situ thermal treatment, a thin film deposition and a use of the same are provided. The gas delivering system integrates a thermal treatment system therein so that a thin film deposition and a by rapid thermal annealing can be performed alternatively on a wafer in a reaction chamber. Accordingly, the density of the thin film can be improved and the thermal budget of the process can be reduced.