Abstract: A double data rate (DDR) synchronous dynamic random access memory (SDRAM) device with at least one memory bank is disclosed. Each memory bank is divided into two independent and simultaneously accessible memory planes. Input data aligned with the rising edge of a data strobe (DQS) and input data aligned with the falling edge of the DQS are separately latched coincident with the respective edges of the DQS. Using an internal clock, the latched input data is re-aligned and simultaneously sent to both planes of an addressed memory bank at the rising edge of the internal clock. With this configuration, the internal processing of the SDRAM is unaffected by latency variations of the DQS.

Abstract: A double data rate (DDR) synchronous dynamic random access memory (SDRAM) device with at least one memory bank is disclosed. Each memory bank is divided into two independent and simultaneously accessible memory planes. A unique addressing circuit controlled by an internal clock generates addresses for each plane from one external address. The generated addresses allow both planes to be accessed simultaneously. Thus, two sets of data from two independent planes of memory are simultaneously accessed in one system clock cycle.

Abstract: A least one one-time programmable nonvolatile (NV) memory element uses a field-effect transistor (FET) as a selectively programmed element. A short duration applied drain voltage exceeding the FET's drain-to-source breakdown voltage results in a drain source resistance which is substantially unaffected by the voltages typically applied at the gate terminal. Since the programmed resistance is less than 200 ohms and a high programming voltage is not required, the present invention compares favorably with antifuse nonvolatile memory techniques. The nonvolatile memory element is implemented without adding complexity to a very large scale integrated (VLSI) circuit process.

Abstract: A frequency adjustable, zero temperature coefficient referencing ring oscillator circuit includes a plurality of inverter stages each having a switching circuit that produces the oscillating output signal for the ring oscillator circuit and a control circuit that controls the switching circuit to establish the frequency of the output signal, the control circuit including field-effect transistors which are operated as output resistance controllable devices and which have their operating points, and thus their output resistances, established by a reference voltage that is produced by a precision reference voltage generating circuit so that the operating frequency of the ring oscillator circuit can be set by adjusting the value of the reference signals produced by the precision reference signal generating circuit and is maintained at the setpoint value because the precision reference voltage generating circuit operates independently of variations in temperature and/or the power supply voltage.