Abstract: A wire bonding technique applied to wafer bump and wafer level chip size package structure and the method of manufacturing thereof comprising under no repassivation layer and without an under bump metallurgy layer, direct forming metal bump on a metal pad of a wafer surface, ball bump, method being employed to form metal bump, and wire bonding of ultrasonic vibration being used to join a suitable metal wire on the metal pad, next pulling off the metal wire and leaving the metal bump, the height of the metal bump is controlled by the parameters of the type, diameter and wire bonding of the metal wire; planarizing the metal bump of all wire bonding to an appropriate height using metallurgical tools; implanting solder bump by means of implant ball or solder printing technology on the metal bump, and an under bump metallurgy layer being formed on the top face of the metal block by means of metal deposition method in case an unfavorable intermetallic compound is formed between the metal (used for the metal bump) a

Abstract: A method of forming metal bumps on a wafer includes the steps of adhering a heat-resistant and steady synthetic tape on the top of the wafer, punching holes through the synthetic tape to form a blind hole on the synthetic tape above the under-bump-metallurgy layer (UBM), filling solder paste into the blind hole by a pusher, melting and then cooling the solder paste into a solder block removing the synthetic tape to expose the solder block, and melting the solder block to form a ball-shaped solder bump.