Patents by Inventor Wen-Luh Liao
Wen-Luh Liao has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
-
Patent number: 11935981Abstract: A photo-detecting device includes a first semiconductor layer with a first dopant, a light-absorbing layer, a second semiconductor layer, and a semiconductor contact layer. The second semiconductor layer is located on the first semiconductor layer and has a first region and a second region, the light absorbing layer is located between the first semiconductor layer and the second semiconductor layer and has a third region and a fourth region, the semiconductor contact layer contacts the first region. The first region includes a second dopant and a third dopant, the second region includes second dopant, and the third region includes third dopant. The semiconductor contact layer has a first thickness greater than 50 ? and smaller than 1000 ?.Type: GrantFiled: June 30, 2021Date of Patent: March 19, 2024Assignee: EPISTAR CORPORATIONInventors: Chu-Jih Su, Chia-Hsiang Chou, Wei-Chih Peng, Wen-Luh Liao, Chao-Shun Huang, Hsuan-Le Lin, Shih-Chang Lee, Mei Chun Liu, Chen Ou
-
Publication number: 20240079524Abstract: A semiconductor device comprises a first semiconductor structure, a second semiconductor structure located on the first semiconductor structure, and an active layer located between the first semiconductor structure and the second semiconductor structure. The first semiconductor structure has a first conductivity type, and includes a plurality of first layers and a plurality of second layers alternately stacked. The second semiconductor structure has a second conductivity type opposite to the first conductivity type. The plurality of first layers and the plurality of second layers include indium and phosphorus, and the plurality of first layers and the plurality of second layers respectively have a first indium atomic percentage and a second indium atomic percentage. The second indium atomic percentage is different from the first indium atomic percentage.Type: ApplicationFiled: September 6, 2023Publication date: March 7, 2024Inventors: Wei-Jen HSUEH, Shih-Chang LEE, Kuo-Feng HUANG, Wen-Luh LIAO, Jiong-Chaso SU, Yi-Chieh LIN, Hsuan-Le LIN
-
Patent number: 11894481Abstract: This disclosure discloses an optical sensing device. The device includes a carrier body having a topmost surface; a first light-emitting device disposed on the carrier body and having a light-emitting surface; and a light-receiving device comprising a group III-V semiconductor material disposed on the carrier body and having a light-receiving surface. The light-emitting surface is separated from the topmost surface by first distant H1, the light-receiving surface is separated from the topmost surface by a second distance H2, and H1 is different from H2.Type: GrantFiled: October 26, 2021Date of Patent: February 6, 2024Assignee: EPISTAR CORPORATIONInventors: Yi-Chieh Lin, Shiuan-Leh Lin, Yung-Fu Chang, Shih-Chang Lee, Chia-Liang Hsu, Yi Hsiao, Wen-Luh Liao, Hong-Chi Shih, Mei-Chun Liu
-
Publication number: 20230074033Abstract: An optoelectronic device includes a substrate, a first semiconductor stack located on the substrate, a second semiconductor stack located on the first semiconductor stack, and a first optical structure located between the first semiconductor stack and the second semiconductor stack. The first semiconductor stack includes a first semiconductor layer, a second semiconductor layer and a first active layer which emits or absorbs a first light with a first wavelength. The second semiconductor stack includes a third semiconductor layer, a fourth semiconductor layer and a second active layer which emits or absorbs a second light with a second wavelength smaller than the first wavelength. The first optical structure includes a plurality of first parts and a plurality of second parts. The first parts and the second parts are alternately arranged by a first period along a horizontal direction parallel to the substrate.Type: ApplicationFiled: September 8, 2022Publication date: March 9, 2023Inventors: Wei-Jen Hsueh, Shih-Chang Lee, Chen Ou, Po-Chou Pan, Wen-Luh Liao
-
Publication number: 20230010081Abstract: A semiconductor device includes a semiconductor stack, a third semiconductor structure, a dielectric layer, and a reflective layer under the third semiconductor structure. The semiconductor stack includes a first semiconductor structure, an active structure, a second semiconductor structure. The first semiconductor structure has a first surface which includes a first portion and a second portion, and the first surface has a first area. The third semiconductor structure connects to the first portion, and has a second surface with a second area. The dielectric layer connects to the second portion and includes a plurality of openings, and the plurality of openings have a third area. A ratio of the second area to the first area is between 0.1˜0.7, and a ratio of the third area to the first area is less than 0.2.Type: ApplicationFiled: July 8, 2022Publication date: January 12, 2023Inventors: Chun-Yu Lin, Jun-Yi Li, Yi-Yang Chiu, Chun-Wei Chang, Yi-Ming Chen, Chang-Hsiu Wu, Wen-Luh Liao, Chen Ou, Wei-Wun Jheng
-
Publication number: 20220173292Abstract: The present disclosure provides a semiconductor device.Type: ApplicationFiled: November 29, 2021Publication date: June 2, 2022Inventors: Ching-Hsing SHEN, Wen-Luh LIAO, Chen OU, Shih-Chang LEE, Hui-Fang KAO, Yun-Chung CHOU
-
Patent number: 11335826Abstract: A photo-detecting device includes a substrate, a first semiconductor layer, a light-absorbing layer, a second semiconductor layer, a semiconductor contact layer, an insulating layer, and an electrode structure. The second semiconductor layer includes a first region and a second region. The semiconductor contact layer is on the first region. The insulating layer covers the semiconductor contact layer, the first region, and the second region. The electrode structure covers the semiconductor contact layer, the insulating layer, the first region, and the second region.Type: GrantFiled: June 30, 2020Date of Patent: May 17, 2022Assignee: EPISTAR CORPORATIONInventors: Chu-Jih Su, Chao-Shun Huang, Shiuan-Leh Lin, Shih-Chang Lee, Wen-Luh Liao, Mei-Chun Liu
-
Publication number: 20220102582Abstract: A semiconductor structure includes a carrier, a bonding structure, a semiconductor stack, a supporting element and a bridge layer. The bonding structure is on the carrier and has an upper surface. The semiconductor stack is on the bonding structure. The supporting element is on the bonding structure and has a side wall. The bridge layer has a first portion directly connected to the supporting element, a second portion connected to the first portion and a third portion connected to the second portion. The second portion and the third portion of the bridge layer are suspended above the upper surface of the bonding structure. The first portion of the bridge layer directly contacts the side wall of the supporting element.Type: ApplicationFiled: December 14, 2021Publication date: March 31, 2022Inventors: Yung-Fu CHANG, Fan-Lei WU, Shih-Chang LEE, Wen-Luh LIAO, Hung-Ta CHENG, Chih-Chaing YANG, Yao-Ru CHANG, Yi HSIAO, Hsiang CHANG
-
Publication number: 20220059717Abstract: This disclosure discloses an optical sensing device. The device includes a carrier body having a topmost surface; a first light-emitting device disposed on the carrier body and having a light-emitting surface; and a light-receiving device comprising a group III-V semiconductor material disposed on the carrier body and having a light-receiving surface. The light-emitting surface is separated from the topmost surface by first distant H1, the light-receiving surface is separated from the topmost surface by a second distance H2, and H1 is different from H2.Type: ApplicationFiled: October 26, 2021Publication date: February 24, 2022Applicant: EPISTAR CORPORATIONInventors: Yi-Chieh LIN, Shiuan-Leh LIN, Yung-Fu CHANG, Shih-Chang LEE, Chia-Liang HSU, Yi HSIAO, Wen-Luh LIAO, Hong-Chi SHIH, Mei-Chun LIU
-
Patent number: 11227978Abstract: A semiconductor device and a package structure are provided. The semiconductor device includes a substrate, a light-emitting structure, a first semiconductor layer, a second semiconductor layer and a first electrode. The light-emitting structure is on the substrate. The first semiconductor layer is on the light-emitting structure. The second semiconductor layer is between the first semiconductor layer and the light-emitting structure. The first electrode is on the second semiconductor layer. At least a portion of the first electrode is separated from the first semiconductor layer.Type: GrantFiled: November 11, 2019Date of Patent: January 18, 2022Assignee: Epistar CorporationInventors: Wen-Luh Liao, Cheng-Long Yeh, Ko-Yin Lai, Yao-Ru Chang, Yung-Fu Chang, Yi Hsiao, Shih-Chang Lee
-
Patent number: 11227975Abstract: A semiconductor structure includes a carrier having a surface, a supporting element, a semiconductor stack and a bridge layer. The supporting element is on the surface. The semiconductor stack is on the surface and has a side surface. The bridge layer includes a first portion connecting to the supporting element, a second portion, and a third portion connecting to the semiconductor stack. The second portion is extended from the third portion toward the first portion and is protruded from the side surface.Type: GrantFiled: August 23, 2019Date of Patent: January 18, 2022Assignee: Epistar CorporationInventors: Yung-Fu Chang, Fan-Lei Wu, Shih-Chang Lee, Wen-Luh Liao, Hung-Ta Cheng, Chih-Chaing Yang, Yao-Ru Chang, Yi Hsiao, Hsiang Chang
-
Publication number: 20210408310Abstract: A photo-detecting device includes a substrate, a first semiconductor layer, a light-absorbing layer, a second semiconductor layer, a semiconductor contact layer, an insulating layer, and an electrode structure. The second semiconductor layer includes a first region and a second region. The semiconductor contact layer is on the first region. The insulating layer covers the semiconductor contact layer, the first region, and the second region. The electrode structure covers the semiconductor contact layer, the insulating layer, the first region, and the second region.Type: ApplicationFiled: June 30, 2020Publication date: December 30, 2021Inventors: Chu-Jih Su, Chao-Shun Huang, Shiuan-Leh Lin, Shih-Chang Lee, Wen-Luh Liao, Mei-Chun Liu
-
Publication number: 20210408311Abstract: A photo-detecting device includes a first semiconductor layer with a first dopant, a light-absorbing layer, a second semiconductor layer, and a semiconductor contact layer. The second semiconductor layer is located on the first semiconductor layer and has a first region and a second region, the light absorbing layer is located between the first semiconductor layer and the second semiconductor layer and has a third region and a fourth region, the semiconductor contact layer contacts the first region. The first region includes a second dopant and a third dopant, the second region includes second dopant, and the third region includes third dopant. The semiconductor contact layer has a first thickness greater than 50 ? and smaller than 1000 ?.Type: ApplicationFiled: June 30, 2021Publication date: December 30, 2021Inventors: Chu-Jih SU, Chia-Hsiang CHOU, Wei-Chih PENG, Wen-Luh LIAO, Chao-Shun HUANG, Hsuan-Le LIN, Shih-Chang LEE, Mei Chun LIU, Chen OU
-
Patent number: 11158757Abstract: This disclosure discloses an optical sensing device. The device includes a carrier body; a first light-emitting device disposed on the carrier body; and a light-receiving device including a group III-V semiconductor material disposed on the carrier body, including a light-receiving surface having an area, wherein the light-receiving device is capable of receiving a first received wavelength having a largest external quantum efficiency so the ratio of the largest external quantum efficiency to the area is ?13.Type: GrantFiled: November 27, 2019Date of Patent: October 26, 2021Assignee: EPISTAR CORPORATIONInventors: Yi-Chieh Lin, Shiuan-Leh Lin, Yung-Fu Chang, Shih-Chang Lee, Chia-Liang Hsu, Yi Hsiao, Wen-Luh Liao, Hong-Chi Shih, Mei-Chun Liu
-
Patent number: 11121285Abstract: A semiconductor device includes a conductive layer, a semiconductor stack, a first contact structure, an intermediate structure, a second contact structure, a first electrode and a second electrode. The semiconductor stack is disposed on the conductive layer. The first contact structure is disposed on the semiconductor stack. The intermediate structure encloses the first contact structure. The second contact structure is between the conductive layer and the semiconductor stack. The first electrode is on the conductive layer and separated from the semiconductor stack. The second electrode is on the intermediate structure.Type: GrantFiled: November 11, 2019Date of Patent: September 14, 2021Assignee: Epistar CorporationInventors: Yung-Fu Chang, Hui-Fang Kao, Yi-Tang Lai, Shih-Chang Lee, Wen-Luh Liao, Mei Chun Liu, Yao-Ru Chang, Yi Hisao
-
Patent number: 11005007Abstract: The present disclosure provides a light-emitting device and manufacturing method thereof. The light-emitting device comprising: a light-emitting stack; and a semiconductor layer having a first surface connecting to the light-emitting stack, a second surface opposite to the first surface, and a void; wherein the void comprises a bottom part near the first surface and an opening on the second surface, and a dimension of the bottom part is larger than the dimension of the opening.Type: GrantFiled: September 12, 2019Date of Patent: May 11, 2021Assignee: EPISTAR CORPORATIONInventors: Wen-Luh Liao, Chih-Chiang Lu, Shih-Chang Lee, Hung-Ta Cheng, Hsin-Chan Chung, Yi-Chieh Lin
-
Publication number: 20200365769Abstract: A semiconductor device is provided, which includes a base, a semiconductor structure and a conductive reflective structure. The base has a first surface and a second surface opposite to the first surface. The semiconductor structure is located on the first surface. The conductive reflective structure is located on the second surface and includes a metal oxide structure and a metal structure. The metal oxide structure is located between the metal structure and the base. The metal oxide structure physically contacts the second surface.Type: ApplicationFiled: May 15, 2020Publication date: November 19, 2020Inventors: Yao-Ru CHANG, Wen-Luh LIAO, Yung-Fu CHANG, Hsiang CHANG, Meng-Yang CHEN, Yun-Hsin PANG, Yi HSIAO
-
Patent number: 10756134Abstract: A light-emitting device includes: a substrate comprising a first side; multiple semiconductor stacks on the first side and separated from each other, wherein each of the multiple semiconductor stacks comprises a light extraction area; multiple electrode pads on the multiple semiconductor stacks; and a blocking layer between one of the semiconductor stacks and the substrate. The multiple semiconductor stacks comprises a first semiconductor stack and a second semiconductor stack, and the first semiconductor stack and the second semiconductor stack are independently controlled to emit light.Type: GrantFiled: March 20, 2018Date of Patent: August 25, 2020Assignee: EPISTAR CORPORATIONInventors: Hsin-Chan Chung, Wen-Luh Liao, Shih-Chang Lee
-
Patent number: 10756960Abstract: A light-emitting device comprises a first light-emitting semiconductor stack comprising a first active layer; a second light-emitting semiconductor stack below the first light-emitting semiconductor stack, wherein the second light-emitting semiconductor stack comprises a second active layer; a reflector between the first light-emitting semiconductor stack and the second light-emitting semiconductor stack; a protecting layer between the reflector and the second light-emitting semiconductor stack; and wherein the first light-emitting semiconductor stack further comprises a first semiconductor layer and a second semiconductor layer sandwiching the first active layer, the second light-emitting semiconductor stack further comprises a third semiconductor layer and a fourth semiconductor layer sandwiching the second active layer, wherein the second semiconductor layer has a first band gap, the third semiconductor layer has a second band gap, and the protecting layer has a third band gap between the first band gap anType: GrantFiled: January 25, 2019Date of Patent: August 25, 2020Assignee: EPISTAR CORPORATIONInventors: Chih-Chiang Lu, Yi-Chieh Lin, Wen-Luh Liao, Shou-Lung Chen, Chien-Fu Huang
-
Patent number: D894852Type: GrantFiled: April 26, 2019Date of Patent: September 1, 2020Assignee: EPISTAR CORPORATIONInventor: Wen-Luh Liao