Patents by Inventor Wen-Luh Liao
Wen-Luh Liao has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 10756960Abstract: A light-emitting device comprises a first light-emitting semiconductor stack comprising a first active layer; a second light-emitting semiconductor stack below the first light-emitting semiconductor stack, wherein the second light-emitting semiconductor stack comprises a second active layer; a reflector between the first light-emitting semiconductor stack and the second light-emitting semiconductor stack; a protecting layer between the reflector and the second light-emitting semiconductor stack; and wherein the first light-emitting semiconductor stack further comprises a first semiconductor layer and a second semiconductor layer sandwiching the first active layer, the second light-emitting semiconductor stack further comprises a third semiconductor layer and a fourth semiconductor layer sandwiching the second active layer, wherein the second semiconductor layer has a first band gap, the third semiconductor layer has a second band gap, and the protecting layer has a third band gap between the first band gap anType: GrantFiled: January 25, 2019Date of Patent: August 25, 2020Assignee: EPISTAR CORPORATIONInventors: Chih-Chiang Lu, Yi-Chieh Lin, Wen-Luh Liao, Shou-Lung Chen, Chien-Fu Huang
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Patent number: 10741721Abstract: A light-emitting device is provided. The light-emitting device comprises a substrate; an insulating layer on the substrate, wherein the insulating layer comprises a first hole; a light-emitting stack on the insulating layer and comprising an active region comprising a top surface, wherein the top surface comprises a first part and a second part; and an opaque layer covering the first part of the top surface and exposing the second part of the top surface, wherein the second part is directly above the first hole.Type: GrantFiled: April 3, 2019Date of Patent: August 11, 2020Assignee: EPISTAR CorporationInventors: Cheng-Feng Yu, Ching-Yuan Tsai, Yao-Ru Chang, Hsin-Chan Chung, Shih-Chang Lee, Wen-Luh Liao, Cheng-Hsing Chiang, Kuo-Feng Huang, Hsu-Hsuan Teng, Hung-Ta Cheng, Yung-Fu Chang
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Patent number: 10700240Abstract: The present disclosure provides a light-emitting device. The light-emitting device includes a light emitting area and an electrode area. The light-emitting area includes a first semiconductor structure having a first active layer and a second semiconductor structure having a second active layer. The electrode area includes an external electrode structure surrounding the second semiconductor structure in a top view. The light-emitting area has a shape of circle or polygon in the top view. When the first semiconductor structure is driven by a first current, the first active layer can emit a first light with a first main wavelength. When the second semiconductor structure is driven by a second current, the active layer of the second semiconductor structure can emit a second light with a second main wavelength.Type: GrantFiled: December 2, 2019Date of Patent: June 30, 2020Assignee: EPISTAR CORPORATIONInventors: Yao-Ru Chang, Wen-Luh Liao, Chun-Yu Lin, Hsin-Chan Chung, Hung-Ta Cheng
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Patent number: 10693039Abstract: A light-emitting device comprises a light-emitting stack; a reflective structure comprising a reflective layer on the light-emitting stack and a first insulating layer covering the reflective layer; and a first conductive layer on the reflective structure; wherein the first insulating layer isolates the reflective layer from the first conductive layer.Type: GrantFiled: May 23, 2017Date of Patent: June 23, 2020Assignee: Epistar CorporationInventors: Wen-Luh Liao, Shao-Ping Lu, Hung-Ta Cheng, Shih-I Chen, Chia-Liang Hsu, Shou-Chin Wei, Ching-Pei Lin, Yu-Ren Peng, Chien-Fu Huang, Wei-Yu Chen, Chun-Hsien Chang
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Publication number: 20200168757Abstract: This disclosure discloses an optical sensing device. The device includes a carrier body; a first light-emitting device disposed on the carrier body; and a light-receiving device including a group III-V semiconductor material disposed on the carrier body, including a light-receiving surface having an area, wherein the light-receiving device is capable of receiving a first received wavelength having a largest external quantum efficiency so the ratio of the largest external quantum efficiency to the area is ?13.Type: ApplicationFiled: November 27, 2019Publication date: May 28, 2020Inventors: Yi-Chieh LIN, Shiuan-Leh LIN, Yung-Fu CHANG, Shih-Chang LEE, Chia-Liang HSU, Yi HSIAO, Wen-Luh LIAO, Hong-Chi SHIH, Mei-Chun LIU
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Publication number: 20200152831Abstract: A semiconductor device includes a conductive layer, a semiconductor stack, a first contact structure, an intermediate structure, a second contact structure, a first electrode and a second electrode. The semiconductor stack is disposed on the conductive layer. The first contact structure is disposed on the semiconductor stack. The intermediate structure encloses the first contact structure. The second contact structure is between the conductive layer and the semiconductor stack. The first electrode is on the conductive layer and separated from the semiconductor stack. The second electrode is on the intermediate structure.Type: ApplicationFiled: November 11, 2019Publication date: May 14, 2020Inventors: Yung-Fu CHANG, Hui-Fang KAO, Yi-Tang LAI, Shih-Chang LEE, Wen-Luh LIAO, Mei Chun LIU, Yao-Ru CHANG, Yi HISAO
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Publication number: 20200152836Abstract: A semiconductor device and a package structure are provided. The semiconductor device includes a substrate, a light-emitting structure, a first semiconductor layer, a second semiconductor layer and a first electrode. The light-emitting structure is on the substrate. The first semiconductor layer is on the light-emitting structure. The second semiconductor layer is between the first semiconductor layer and the light-emitting structure. The first electrode is on the second semiconductor layer. At least a portion of the first electrode is separated from the first semiconductor layer.Type: ApplicationFiled: November 11, 2019Publication date: May 14, 2020Inventors: Wen-Luh LIAO, Cheng-Long YEH, Ko-Yin LAI, Yao-Ru CHANG, Yung-Fu CHANG, Yi HSIAO, Shih-Chang LEE
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Publication number: 20200105975Abstract: The present disclosure provides a light-emitting device. The light-emitting device includes a light emitting area and an electrode area. The light-emitting area includes a first semiconductor structure having a first active layer and a second semiconductor structure having a second active layer. The electrode area includes an external electrode structure surrounding the second semiconductor structure in a top view. The light-emitting area has a shape of circle or polygon in the top view. When the first semiconductor structure is driven by a first current, the first active layer can emit a first light with a first main wavelength. When the second semiconductor structure is driven by a second current, the active layer of the second semiconductor structure can emit a second light with a second main wavelength.Type: ApplicationFiled: December 2, 2019Publication date: April 2, 2020Inventors: Yao-Ru CHANG, Wen-Luh LIAO, Chun-Yu LIN, Hsin-Chan CHUNG, Hung-Ta CHENG
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Publication number: 20200075807Abstract: A semiconductor structure includes a carrier having a surface, a supporting element, a semiconductor stack and a bridge layer. The supporting element is on the surface. The semiconductor stack is on the surface and has a side surface. The bridge layer includes a first portion connecting to the supporting element, a second portion, and a third portion connecting to the semiconductor stack. The second portion is extended from the third portion toward the first portion and is protruded from the side surface.Type: ApplicationFiled: August 23, 2019Publication date: March 5, 2020Inventors: Yung-Fu CHANG, Fan-Lei WU, Shih-Chang LEE, Wen-Luh LIAO, Hung-Ta CHENG, Chih-Chaing YANG, Yao-Ru CHANG, Yi HSIAO, Hsiang CHANG
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Patent number: 10553761Abstract: A light-emitting device includes a metal connecting structure; a metal reflective layer on the metal connecting structure; a barrier layer between the metal connecting structure and the metal reflective layer; a light-emitting stack on the metal reflective layer; a dielectric layer between the light-emitting stack and the metal reflective layer, and a first extension electrode and a second extension electrode on the light-emitting stack and away from the metal reflective layer. The dielectric layer includes a first part and a second part separated from the first part from a cross section of the light-emitting device. The first extension electrode and the second extension electrode respectively align with the first part and the second part. From a cross section of the light-emitting stack, the first extension electrode has a first width and the first part has a second width larger than the first width.Type: GrantFiled: January 28, 2019Date of Patent: February 4, 2020Assignee: Epistar CorporationInventors: Fu Chun Tsai, Wen Luh Liao, Shih I Chen, Chia Liang Hsu, Chih Chiang Lu
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Patent number: 10529896Abstract: The present disclosure provides a light-emitting device, comprising: a light-emitting stack; a first semiconductor layer on the light-emitting stack; a first electrode formed on the first semiconductor layer and comprising an inner segment, an outer segment, and a plurality of extending segments electrically connecting the inner segment with the outer segment.Type: GrantFiled: September 19, 2018Date of Patent: January 7, 2020Assignee: EPISTAR CORPORATIONInventors: Yao-Ru Chang, Wen-Luh Liao, Chun-Yu Lin, Hsin-Chan Chung, Hung-Ta Cheng
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Publication number: 20200006595Abstract: The present disclosure provides a light-emitting device and manufacturing method thereof. The light-emitting device comprising: a light-emitting stack; and a semiconductor layer having a first surface connecting to the light-emitting stack, a second surface opposite to the first surface, and a void; wherein the void comprises a bottom part near the first surface and an opening on the second surface, and a dimension of the bottom part is larger than the dimension of the opening.Type: ApplicationFiled: September 12, 2019Publication date: January 2, 2020Inventors: Wen-Luh LIAO, Chih-Chiang LU, Shih-Chang LEE, Hung-Ta CHENG, Hsin-Chan CHUNG, Yi-Chieh LIN
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Patent number: 10461223Abstract: A semiconductor device includes a semiconductor stack comprising a surface, and an electrode structure comprises an electrode pad formed on the surface, and the electrode structure further comprises a first extending electrode, a second extending electrode and a third extending electrode connecting to the electrode pad. The first extending electrode is closer to a periphery of the surface than the third extending electrode is, and the second extending electrode is between the first extending electrode and the third extending electrode. From a top view of the semiconductor device, the first extending electrode, the second extending electrode and the third extending electrode respectively include a first curve having a first angle ?1, a second curve having a second angle ?2 and a third curve having a third angle ?3, wherein ?3>?2>?1 .Type: GrantFiled: September 12, 2018Date of Patent: October 29, 2019Assignee: Epistar CorporationInventors: Yung-Fu Chang, Hsin-Chan Chung, Hung-Ta Cheng, Wen-Luh Liao, Shih-Chang Lee, Chih-Chiang Lu, Yi-Ming Chen, Yao-Ning Chan, Chun-Fu Tsai
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Patent number: 10453995Abstract: The present disclosure provides a light-emitting device and manufacturing method thereof. The light-emitting device comprising: a light-emitting stack; and a semiconductor layer having a first surface connecting to the light-emitting stack, a second surface opposite to the first surface, and a void; wherein the void comprises a bottom part near the first surface and an opening on the second surface, and a dimension of the bottom part is larger than the dimension of the opening.Type: GrantFiled: August 25, 2017Date of Patent: October 22, 2019Assignee: EPISTAR CORPORATIONInventors: Wen-Luh Liao, Chih-Chiang Lu, Shih-Chang Lee, Hung-Ta Cheng, Hsin-Chan Chung, Yi-Chieh Lin
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Patent number: 10367118Abstract: A light-emitting diode, comprises an active layer for emitting a light ray; an upper semiconductor stack on the active layer, wherein the upper semiconductor stack comprises a window layer; a reflector; and a lower semiconductor stack between the active layer and the reflector; wherein the thickness of the window layer is small than or equal to 3 ?m, and the thickness of the lower semiconductor stack is small than or equal to 1 ?m.Type: GrantFiled: September 15, 2016Date of Patent: July 30, 2019Assignee: EPISTAR CORPORATIONInventors: Yu-Ren Peng, Tzu-Chieh Hsu, Shih-I Chen, Rong-Ren Lee, Hsin-Chan Chung, Wen-Luh Liao, Yi-Chieh Lin
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Publication number: 20190229233Abstract: A light-emitting device is provided. The light-emitting device comprises a substrate; an insulating layer on the substrate, wherein the insulating layer comprises a first hole; a light-emitting stack on the insulating layer and comprising an active region comprising a top surface, wherein the top surface comprises a first part and a second part; and an opaque layer covering the first part of the top surface and exposing the second part of the top surface, wherein the second part is directly above the first hole.Type: ApplicationFiled: April 3, 2019Publication date: July 25, 2019Inventors: Cheng-Feng YU, Ching-Yuan TSAI, Yao-Ru CHANG, Hsin-Chan CHUNG, Shih-Chang LEE, Wen-Luh LIAO, Cheng-Hsing CHIANG, Kuo-Feng HUANG, Hsu-Hsuan TENG, Hung-Ta CHENG, Yung-Fu CHANG
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Publication number: 20190172977Abstract: A light-emitting device includes a metal connecting structure; a metal reflective layer on the metal connecting structure; a barrier layer between the metal connecting structure and the metal reflective layer; a light-emitting stack on the metal reflective layer; a dielectric layer between the light-emitting stack and the metal reflective layer, and a first extension electrode and a second extension electrode on the light-emitting stack and away from the metal reflective layer. The dielectric layer includes a first part and a second part separated from the first part from a cross section of the light-emitting device. The first extension electrode and the second extension electrode respectively align with the first part and the second part. From a cross section of the light-emitting stack, the first extension electrode has a first width and the first part has a second width larger than the first width.Type: ApplicationFiled: January 28, 2019Publication date: June 6, 2019Inventors: Fu Chun TSAI, Wen Luh LIAO, Shih I CHEN, Chia Liang HSU, Chih Chiang LU
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Patent number: 10312407Abstract: A light-emitting device is provided. The light-emitting device comprises a substrate; an insulating layer on the substrate, wherein the insulating layer comprises a first hole; a light-emitting stack on the insulating layer and comprising an active region comprising a top surface, wherein the top surface comprises a first part and a second part; and an opaque layer covering the first part of the top surface and exposing the second part of the top surface, wherein the second part is directly above the first hole.Type: GrantFiled: July 20, 2018Date of Patent: June 4, 2019Assignee: EPISTAR CORPORATIONInventors: Cheng-Feng Yu, Ching-Yuan Tsai, Yao-Ru Chang, Hsin-Chan Chung, Shih-Chang Lee, Wen-Luh Liao, Cheng-Hsing Chiang, Kuo-Feng Huang, Hsu-Hsuan Teng, Hung-Ta Cheng, Yung-Fu Chang
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Publication number: 20190158352Abstract: A light-emitting device comprises a first light-emitting semiconductor stack comprising a first active layer; a second light-emitting semiconductor stack below the first light-emitting semiconductor stack, wherein the second light-emitting semiconductor stack comprises a second active layer; a reflector between the first light-emitting semiconductor stack and the second light-emitting semiconductor stack; a protecting layer between the reflector and the second light-emitting semiconductor stack; and wherein the first light-emitting semiconductor stack further comprises a first semiconductor layer and a second semiconductor layer sandwiching the first active layer, the second light-emitting semiconductor stack further comprises a third semiconductor layer and a fourth semiconductor layer sandwiching the second active layer, wherein the second semiconductor layer has a first band gap, the third semiconductor layer has a second band gap, and the protecting layer has a third band gap between the first band gap anType: ApplicationFiled: January 25, 2019Publication date: May 23, 2019Inventors: Chih-Chiang LU, Yi-Chieh LIN, Wen-Luh LIAO, Shou-Lung CHEN, Chien-Fu HUANG
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Patent number: 10236411Abstract: A light-emitting device comprises a first light-emitting semiconductor stack comprising a first active layer; a second light-emitting semiconductor stack below the first light-emitting semiconductor stack, wherein the second light-emitting semiconductor stack comprises a second active layer; a reflector between the first light-emitting semiconductor stack and the second light-emitting semiconductor stack; a protecting layer between the reflector and the second light-emitting semiconductor stack; and wherein the first light-emitting semiconductor stack further comprises a first semiconductor layer and a second semiconductor layer sandwiching the first active layer, the second light-emitting semiconductor stack further comprises a third semiconductor layer and a fourth semiconductor layer sandwiching the second active layer, wherein the second semiconductor layer has a first band gap, the third semiconductor layer has a second band gap, and the protecting layer has a third band gap between the first band gap anType: GrantFiled: October 26, 2016Date of Patent: March 19, 2019Assignee: EPISTAR CORPORATIONInventors: Chih-Chiang Lu, Yi-Chieh Lin, Wen-Luh Liao, Shou-Lung Chen, Chien-Fu Huang