Abstract: A metal-insulator-insulator (MIM) capacitor structure is provided. The MIM capacitor includes a top electrode, a bottom electrode and a dielectric layer. The dielectric layer is disposed between the top electrode and the bottom electrode. The main feature for this kind of MIM capacitor is that the bottom electrode includes a conductive layer and a metal nitride with multi-layered structure. The metal nitride with multi-layered structure is disposed between the conductive layer and the dielectric layer. The nitrogen content in the metal nitride with multi-layered structure gradually increases toward the dielectric layer and the metal nitride belongs to the amorphous type. Due to the presence of the metal nitride, the dielectric layer is prevented from crystallization, thereby reducing the current leakage of the MIM capacitor.

Abstract: A moisture-adding microwave food cover apparatus, comprising of a capped (not absolutely essential, but part of the current implementation of the design) conical or dome-like structure, with an upper liquid reservoir, cool fin handle, removable top center cap, and a lower condensed moisture reservoir. The apparatus may be manufactured from any microwaveable material and it is efficient in preventing spatter, retaining heat, retaining moisture, and adding moisture to food that is heated or cooked using a microwave oven. The apparatus is easy to use, easy to clean, easy to manufacture, and reduces the time required to cook or heat food in a microwave.

Abstract: A process for eliminating an interface layer between a poly plug and a hemispherical silicon grain. A substrate comprising a conductive plug and a storage node opening is provided, and the storage node opening is located on the conductive plug. Then, a first conductive layer is formed conformably over the inside surface of the storage node opening and a hemispherical silicon grain layer is formed on the first conductive layer. Next, the hemispherical silicon grain layer and the first conductive layer is implanted and the substrate is annealed. The re-arrangement and re-crystallization of the interface layer can greatly reduce the resistance of the node contact.