Patents by Inventor Wen-Ming Lee

Wen-Ming Lee has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 8123404
    Abstract: A temperature detector comprises a first current mirror, a second current mirror, a first pulse generator, a second pulse generator, a phase detector and a controller. The current of the first current mirror is in variation with temperature, but the current of the second current mirror is not. If the output pulse of the first pulse generator appears earlier than that of the second pulse generator, the controller enhances the output current of the second current mirror. If the output pulse of the first pulse generator appears later than that of the second pulse generator, the controller decreases the output current of the second current mirror.
    Type: Grant
    Filed: July 10, 2008
    Date of Patent: February 28, 2012
    Assignee: Nanya Technology Corp.
    Inventor: Wen Ming Lee
  • Patent number: 8096706
    Abstract: A temperature detector includes a plurality of comparators, an electronic component and a controller. Each of the comparators is responsible for detecting different temperature ranges. The electronic component has a temperature-dependent threshold voltage and an output connected to inputs of the plurality of comparators. The controller is configured to enable only one of the comparators at one time and to generate a value to the other inputs of the plurality of comparators.
    Type: Grant
    Filed: August 6, 2008
    Date of Patent: January 17, 2012
    Assignee: Nanya Technology Corporation
    Inventor: Wen Ming Lee
  • Publication number: 20110029272
    Abstract: A temperature sensing system, which comprises: a temperature analyzing circuit, for sensing temperature and generating an analyzing result in response to the sensed temperature; and a control unit, for controlling a temperature sensing time interval; wherein the control unit continuously changes the temperature sensing time interval according to a predetermined temperature range in response to the sensed temperature.
    Type: Application
    Filed: July 29, 2009
    Publication date: February 3, 2011
    Inventor: Wen-Ming Lee
  • Publication number: 20090296779
    Abstract: A temperature detector includes a plurality of comparators, an electronic component and a controller. Each of the comparators is responsible for detecting different temperature ranges. The electronic component has a temperature-dependent threshold voltage and an output connected to inputs of the plurality of comparators. The controller is configured to enable only one of the comparators at one time and to generate a value to the other inputs of the plurality of comparators.
    Type: Application
    Filed: August 6, 2008
    Publication date: December 3, 2009
    Applicant: NANYA TECHNOLOGY CORP.
    Inventor: Wen Ming Lee
  • Publication number: 20090268778
    Abstract: A temperature detector comprises a first current mirror, a second current mirror, a first pulse generator, a second pulse generator, a phase detector and a controller. The current of the first current mirror is in variation with temperature, but the current of the second current mirror is not. If the output pulse of the first pulse generator appears earlier than that of the second pulse generator, the controller enhances the output current of the second current mirror. If the output pulse of the first pulse generator appears later than that of the second pulse generator, the controller decreases the output current of the second current mirror.
    Type: Application
    Filed: July 10, 2008
    Publication date: October 29, 2009
    Applicant: NANYA TECHNOLOGY CORP.
    Inventor: Wen Ming Lee
  • Patent number: 7166900
    Abstract: A semiconductor memory device comprises a temperature dependent voltage source for outputting a voltage at its output in dependence on a temperature measured in the semiconductor memory device. At least one memory cell is provided with at least one first transistor. The first transistor includes a first transistor body, which is connected to the output of said temperature dependent voltage source.
    Type: Grant
    Filed: August 17, 2005
    Date of Patent: January 23, 2007
    Assignees: Infineon Technologies AG, Nanya Technologies Corporation
    Inventors: Jin Suk Mun, Wen-Ming Lee, Rainer Bartenschlager, Christian Sichert, Florian Schnabel