Patents by Inventor WEN-TING LAN

WEN-TING LAN has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20210296312
    Abstract: Various embodiments of the present disclosure are directed towards an integrated chip (IC) including a first fin structure and a second fin structure vertically extending from a semiconductor substrate, respectively. The first fin structure laterally extends along a first direction and has a first width. The second fin structure laterally extends along the first direction and has a second width that is less than the first width. A first plurality of nanostructures directly overlies the first fin structure and is vertically spaced from the first fin structure by a non-zero distance. A gate electrode continuously laterally extends along a second direction that is substantially perpendicular to the first direction. The gate electrode directly overlies the first and second fin structures, and wraps around the nanostructures.
    Type: Application
    Filed: March 19, 2020
    Publication date: September 23, 2021
    Inventors: Chih-Chao Chou, Chih-Hao Wang, Shi Ning Ju, Kuo-Cheng Chiang, Wen-Ting Lan
  • Publication number: 20210159311
    Abstract: Semiconductor structures and method for manufacturing the same are provided. The method for manufacturing the semiconductor structure includes forming a first fin structure including first semiconductor material layers and second semiconductor material layers alternately stacked over a substrate and forming an isolation structure surrounding the first fin structure. The method for manufacturing the semiconductor structure also includes forming a first capping layer over the isolation structure and covering a top surface and sidewalls of the first fin structure and etching the isolation structure to form a first gap between the first capping layer and a top surface of the isolation structure. The method for manufacturing the semiconductor structure also includes forming a protection layer covering a sidewall of the first capping layer and filling in the first gap.
    Type: Application
    Filed: November 27, 2019
    Publication date: May 27, 2021
    Inventors: Wen-Ting LAN, Guan-Lin CHEN, Shi-Ning JU, Kuo-Cheng CHIANG, Chih-Hao WANG, Ching-Wei TSAI, Kuan-Lun CHENG
  • Publication number: 20210134721
    Abstract: Nanostructure field-effect transistors (nano-FETs) including isolation layers formed between epitaxial source/drain regions and semiconductor substrates and methods of forming the same are disclosed. In an embodiment, a semiconductor device includes a power rail, a dielectric layer over the power rail, a first channel region over the dielectric layer, a second channel region over the first channel region, a gate stack over the first channel region and the second channel region, where the gate stack is further disposed between the first channel region and the second channel region and a first source/drain region adjacent the gate stack and electrically connected to the power rail.
    Type: Application
    Filed: July 27, 2020
    Publication date: May 6, 2021
    Inventors: Kuo-Cheng Chiang, Shi Ning Ju, Chih-Chao Chou, Wen-Ting Lan, Chih-Hao Wang
  • Publication number: 20210111262
    Abstract: According to an exemplary embodiment, a method of forming a vertical structure is provided. The method includes the following operations: providing a substrate; providing the vertical structure having a source, a channel, and a drain over the substrate; shrinking the source and the channel by oxidation; forming a metal layer over the drain of the vertical structure; and annealing the metal layer to form a silicide over the drain of the vertical structure.
    Type: Application
    Filed: November 30, 2020
    Publication date: April 15, 2021
    Inventors: Chih-Hao WANG, Shi-Ning JU, Kai-Chieh YANG, Wen-Ting LAN, Wai-Yi LIEN
  • Publication number: 20210057325
    Abstract: Semiconductor devices and methods are provided. A method according to the present disclosure includes receiving a substrate that includes a first semiconductor layer, a second semiconductor layer, and a third semiconductor layer; forming a plurality of fins over the third semiconductor layer; forming a trench between two of the plurality of fins; depositing a dummy material in the trench; forming a gate structure over channel regions of the plurality of the fins; forming source/drain features over source/drain regions of the plurality of the fins; bonding the substrate on a carrier wafer; removing the first and second semiconductor layers to expose the dummy material; removing the dummy material in the trench; depositing a conductive material in the trench; and bonding the substrate to a silicon substrate such that the conductive material is in contact with the silicon substrate. The trench extends through the third semiconductor layer and has a bottom surface on the second semiconductor layer.
    Type: Application
    Filed: November 9, 2020
    Publication date: February 25, 2021
    Inventors: Chih-Chao Chou, Kuo-Cheng Chiang, Shi Ning Ju, Wen-Ting Lan, Chih-Hao Wang
  • Publication number: 20200381352
    Abstract: Semiconductor devices and methods are provided. A method according to the present disclosure includes receiving a substrate that includes a first semiconductor layer, a second semiconductor layer, and a third semiconductor layer; forming a plurality of fins over the third semiconductor layer; forming a trench between two of the plurality of fins; depositing a dummy material in the trench; forming a gate structure over channel regions of the plurality of the fins; forming source/drain features over source/drain regions of the plurality of the fins; bonding the substrate on a carrier wafer; removing the first and second semiconductor layers to expose the dummy material; removing the dummy material in the trench; depositing a conductive material in the trench; and bonding the substrate to a silicon substrate such that the conductive material is in contact with the silicon substrate. The trench extends through the third semiconductor layer and has a bottom surface on the second semiconductor layer.
    Type: Application
    Filed: May 31, 2019
    Publication date: December 3, 2020
    Inventors: Chih-Chao Chou, Kuo-Cheng Ching, Shi Ning Ju, Wen-Ting Lan, Chih-Hao Wang
  • Patent number: 10854723
    Abstract: According to an exemplary embodiment, a method of forming a vertical structure is provided. The method includes the following operations: providing a substrate; providing the vertical structure having a source, a channel, and a drain over the substrate; shrinking the source and the channel by oxidation; forming a metal layer over the drain of the vertical structure; and annealing the metal layer to form a silicide over the drain of the vertical structure.
    Type: Grant
    Filed: July 31, 2017
    Date of Patent: December 1, 2020
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
    Inventors: Chih-Hao Wang, Wai-Yi Lien, Shi-Ning Ju, Kai-Chieh Yang, Wen-Ting Lan
  • Patent number: 10833003
    Abstract: Semiconductor devices and methods are provided. A method according to the present disclosure includes receiving a substrate that includes a first semiconductor layer, a second semiconductor layer, and a third semiconductor layer; forming a plurality of fins over the third semiconductor layer; forming a trench between two of the plurality of fins; depositing a dummy material in the trench; forming a gate structure over channel regions of the plurality of the fins; forming source/drain features over source/drain regions of the plurality of the fins; bonding the substrate on a carrier wafer; removing the first and second semiconductor layers to expose the dummy material; removing the dummy material in the trench; depositing a conductive material in the trench; and bonding the substrate to a silicon substrate such that the conductive material is in contact with the silicon substrate. The trench extends through the third semiconductor layer and has a bottom surface on the second semiconductor layer.
    Type: Grant
    Filed: May 31, 2019
    Date of Patent: November 10, 2020
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
    Inventors: Chih-Chao Chou, Kuo-Cheng Ching, Shi Ning Ju, Wen-Ting Lan, Chih-Hao Wang
  • Patent number: 10755943
    Abstract: A method includes forming a mandrel structure over a semiconductor substrate. A first spacer and a second spacer are formed alongside the mandrel structure. A mask layer is over a first portion of the first spacer, in which a second portion of the first spacer and the second spacer are exposed from the mask layer. The exposed second spacer is etched, in which etching the exposed second spacer is performed such that a polymer is formed over a top surface of the exposed second portion of the first spacer. The mask layer, the polymer, and the mandrel structure are removed. The semiconductor substrate is patterned using the first spacer.
    Type: Grant
    Filed: December 17, 2018
    Date of Patent: August 25, 2020
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
    Inventors: Jung-Hao Chang, Chao-Hsien Huang, Wen-Ting Lan, Shi-Ning Ju, Li-Te Lin, Kuo-Cheng Ching
  • Publication number: 20190139777
    Abstract: A method includes forming a mandrel structure over a semiconductor substrate. A first spacer and a second spacer are formed alongside the mandrel structure. A mask layer is over a first portion of the first spacer, in which a second portion of the first spacer and the second spacer are exposed from the mask layer. The exposed second spacer is etched, in which etching the exposed second spacer is performed such that a polymer is formed over a top surface of the exposed second portion of the first spacer. The mask layer, the polymer, and the mandrel structure are removed. The semiconductor substrate is patterned using the first spacer.
    Type: Application
    Filed: December 17, 2018
    Publication date: May 9, 2019
    Inventors: Jung-Hao CHANG, Chao-Hsien HUANG, Wen-Ting LAN, Shi-Ning JU, Li-Te LIN, Kuo-Cheng CHING
  • Patent number: 10157751
    Abstract: A method for manufacturing a semiconductor device, including forming a first hard mask strip, a second hard mask strip, and a dummy structure over a substrate, in which the dummy structure is formed between and in contact with the first hard mask strip and the second hard mask strip; forming a hard mask layer over the first hard mask strip, the dummy structure, and the second hard mask strip; patterning the hard mask layer to form an opening exposing the first hard mask strip and the dummy structure, and partially exposing the second hard mask strip; and performing an etching process to remove the first hard mask strip and form a recess in the second hard mask strip, in which the performing the etching process includes forming a polymer in the recess.
    Type: Grant
    Filed: October 26, 2017
    Date of Patent: December 18, 2018
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
    Inventors: Jung-Hao Chang, Chao-Hsien Huang, Wen-Ting Lan, Shi-Ning Ju, Li-Te Lin, Kuo-Cheng Ching
  • Publication number: 20170358654
    Abstract: According to an exemplary embodiment, a method of forming a vertical structure is provided. The method includes the following operations: providing a substrate; providing the vertical structure having a source, a channel, and a drain over the substrate; shrinking the source and the channel by oxidation; forming a metal layer over the drain of the vertical structure; and annealing the metal layer to form a silicide over the drain of the vertical structure.
    Type: Application
    Filed: July 31, 2017
    Publication date: December 14, 2017
    Inventors: Chih-Hao WANG, Wai-Yi LIEN, Shi-Ning JU, Kai-Chieh YANG, Wen-Ting LAN
  • Patent number: 9755033
    Abstract: According to an exemplary embodiment, a method of forming a vertical structure is provided. The method includes the following operations: providing a substrate; providing the vertical structure having a source, a channel, and a drain over the substrate; shrinking the source and the channel by oxidation; forming a metal layer over the drain of the vertical structure; and annealing the metal layer to form a silicide over the drain of the vertical structure.
    Type: Grant
    Filed: June 13, 2014
    Date of Patent: September 5, 2017
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
    Inventors: Chih-Hao Wang, Wai-Yi Lien, Shi-Ning Ju, Kai-Chieh Yang, Wen-Ting Lan
  • Publication number: 20150364560
    Abstract: According to an exemplary embodiment, a method of forming a vertical structure is provided. The method includes the following operations: providing a substrate; providing the vertical structure having a source, a channel, and a drain over the substrate; shrinking the source and the channel by oxidation; forming a metal layer over the drain of the vertical structure; and annealing the metal layer to form a silicide over the drain of the vertical structure.
    Type: Application
    Filed: June 13, 2014
    Publication date: December 17, 2015
    Inventors: CHIH-HAO WANG, WAI-YI LIEN, SHI-NING JU, KAI-CHIEH YANG, WEN-TING LAN