Abstract: A method for fabricating semiconductor device includes the steps of first forming a gate dielectric layer on a substrate; forming a gate material layer on the gate dielectric layer, and removing part of the gate material layer and part of the gate dielectric layer to form a gate electrode, in which a top surface of the gate dielectric layer adjacent to two sides of the gate electrode is lower than a top surface of the gate dielectric layer between the gate electrode and the substrate. Next, a first mask layer is formed on the gate dielectric layer and the gate electrode, part of the first mask layer and part of the gate dielectric layer are removed to form a first spacer, a second mask layer is formed on the substrate and the gate electrode, and part of the second mask layer is removed to form a second spacer.

Abstract: The present invention provides a method of manufacturing a gate stack structure. The method comprises providing a substrate. A dielectric layer is then formed on the substrate and a gate trench is formed in the dielectric layer. A bottom barrier layer, a first work function metal layer and a top barrier layer are formed in the gate trench in sequence. Afterwards, a silicon formation layer is formed on the top barrier layer and filling the gate trench. A planarization process is performed, to remove a portion of the silicon formation layer, a portion of the bottom barrier layer, a portion of the first work function metal layer, and a portion of the top barrier layer. Next, the remaining silicon formation layer is removed completely, and a conductive layer is filled in the gate trench.

Abstract: A method for fabricating semiconductor device includes the steps of first forming a gate dielectric layer on a substrate; forming a gate material layer on the gate dielectric layer, and removing part of the gate material layer and part of the gate dielectric layer to form a gate electrode, in which a top surface of the gate dielectric layer adjacent to two sides of the gate electrode is lower than a top surface of the gate dielectric layer between the gate electrode and the substrate. Next, a first mask layer is formed on the gate dielectric layer and the gate electrode, part of the first mask layer and part of the gate dielectric layer are removed to form a first spacer, a second mask layer is formed on the substrate and the gate electrode, and part of the second mask layer is removed to form a second spacer.

Abstract: The present invention provides a method of manufacturing a gate stack structure. The method comprises providing a substrate. A dielectric layer is then formed on the substrate and a gate trench is formed in the dielectric layer. A bottom barrier layer, a first work function metal layer and a top barrier layer are formed in the gate trench in sequence. Afterwards, a silicon formation layer is formed on the top barrier layer and filling the gate trench. A planarization process is performed, to remove a portion of the silicon formation layer, a portion of the bottom barrier layer, a portion of the first work function metal layer, and a portion of the top barrier layer. Next, the remaining silicon formation layer is removed completely, and a conductive layer is filled in the gate trench.

Abstract: A semiconductor device includes a substrate, a gate structure, a spacer, a mask layer, and at least one void. The gate structure is disposed on the substrate, and the gate structure includes a metal gate electrode. The spacer is disposed on sidewalls of the gate structure, and a topmost surface of the spacer is higher than a topmost surface of the metal gate electrode. The mask layer is disposed on the gate structure. At least one void is disposed in the mask layer and disposed between the metal gate electrode and the spacer.

Abstract: A semiconductor device includes a substrate, a metal gate on the substrate, and a first inter-layer dielectric (ILD) layer around the metal gate. A top surface of the metal gate is lower than a top surface of the ILD layer thereby forming a recessed region atop the metal gate. A mask layer is disposed in the recessed region. A void is formed in the mask layer within the recessed region. A second ILD layer is disposed on the mask layer and the first ILD layer. A contact hole extends into the second ILD layer and the mask layer. The contact hole exposes the top surface of the metal gate and communicates with the void. A conductive layer is disposed in the contact hole and the void.

Abstract: The present invention provides a method of manufacturing a gate stack structure. The method comprises providing a substrate. A dielectric layer is then formed on the substrate and a gate trench is formed in the dielectric layer. A bottom barrier layer, a first work function metal layer and a top barrier layer are formed in the gate trench in sequence. Afterwards, a silicon formation layer is formed on the top barrier layer and filling the gate trench. A planarization process is performed, to remove a portion of the silicon formation layer, a portion of the bottom barrier layer, a portion of the first work function metal layer, and a portion of the top barrier layer. Next, the remaining silicon formation layer is removed completely, and a conductive layer is filled in the gate trench.

Abstract: A semiconductor device includes a substrate, a gate structure, a spacer, a mask layer, and at least one void. The gate structure is disposed on the substrate, and the gate structure includes a metal gate electrode. The spacer is disposed on sidewalls of the gate structure, and a topmost surface of the spacer is higher than a topmost surface of the metal gate electrode. The mask layer is disposed on the gate structure. At least one void is disposed in the mask layer and disposed between the metal gate electrode and the spacer.

Abstract: A field-effect transistor includes a substrate having thereon an isolation region. A fin structure protrudes from a top surface of the isolation region. The fin structure extends along a first direction. A gate electrode strides across the fin structure and extends along a second direction. A fin corner layer wraps a lower portion of the gate electrode around the fin structure. A spacer covers a sidewall of the gate electrode and the fin corner layer.

Abstract: A shelf with interlayers may include a shelf made by a plurality of connectors and panels, wherein both sides of the panel has at least one connecting portion and connecting unit, and connecting unit has a connecting groove corresponding to the panel, and the connecting groove is configured to engage with auxiliary panels to increase the variability of using an inner space of the shelf.

Abstract: A portable electronic device includes a host module, a display module pivoted to the host module, a pivoting component and a lifting mechanism. The pivoting component is driven by the display module to rotate simultaneously. The lifting mechanism includes a base, a linking component connected to the base, a sliding component and a pushing component. A guiding slot is formed on the sliding component, and the guiding slot sheathes the linking component. The pushing component is installed on the pivoting component for pushing the sliding component to move in a first direction after the display module pivots relative to the host module to a predetermined angle, so that the guiding slot guides the linking component to move in a second direction different from the first direction, so as to drive the base to protrude outside a bottom side of the host module to lift the host module up.

Abstract: An assembled structure with connectors may include a first unit and a second unit. One side of the first unit extends to protrudingly form a plurality of protruding ribs that define a plurality of horizontal and vertical long connecting slots, and the first unit and second unit engage with each other. Also, a plurality of engaging slots are formed between the first unit and second unit, and the other side of the second unit has elongated slots. Thus, a board is connected with the connector at four corners of the board, and the first unit has long connecting slots that are used to circularly form a square frame. A backboard is connected with the engaging slot and the board to form a usable assembled structure.

Abstract: A shelf with interlayers may include a shelf made by a plurality of connectors and panels, wherein both sides of the panel has at least one connecting portion and connecting unit, and connecting unit has a connecting groove corresponding to the panel, and the connecting groove is configured to engage with auxiliary panels to increase the variability of using an inner space of the shelf.

Abstract: A card reader is disposed in a case body of an electronic device for connecting an electronic card. The card reader includes an electrical connection socket, at least one guiding member, at least one guiding rail and a cover. The electrical connection socket is disposed in the case body for inserting an electrical connector of the electronic card thereinto. The guiding member is disposed in the case body and provides a guiding slot extending along a guiding direction. The guiding direction is parallel to a direction in which the electrical connector is inserted into the electrical connection socket. The guiding rail includes a sliding portion sliding in the guiding slot and a lower support portion extending from the sliding portion for guiding the electronic card to pass through the insertion hole of the case body. The cover is pivoted to the guiding rail and for closing the insertion hole.

Abstract: A portable electronic device includes a host module, a display module pivoted to the host module, a pivoting component and a lifting mechanism. The pivoting component is driven by the display module to rotate simultaneously. The lifting mechanism includes a base, a linking component connected to the base, a sliding component and a pushing component. A guiding slot is formed on the sliding component, and the guiding slot sheathes the linking component. The pushing component is installed on the pivoting component for pushing the sliding component to move in a first direction after the display module pivots relative to the host module to a predetermined angle, so that the guiding slot guides the linking component to move in a second direction different from the first direction, so as to drive the base to protrude outside a bottom side of the host module to lift the host module up.

Abstract: A card reader is disposed in a case body of an electronic device for connecting an electronic card. The card reader includes an electrical connection socket, at least one guiding member, at least one guiding rail and a cover. The electrical connection socket is disposed in the case body for inserting an electrical connector of the electronic card thereinto. The guiding member is disposed in the case body and provides a guiding slot extending along a guiding direction. The guiding direction is parallel to a direction in which the electrical connector is inserted into the electrical connection socket. The guiding rail includes a sliding portion sliding in the guiding slot and a lower support portion extending from the sliding portion for guiding the electronic card to pass through the insertion hole of the case body. The cover is pivoted to the guiding rail and for closing the insertion hole.

Abstract: A card reader is disposed in a case body of an electronic device for connecting an electronic card. The card reader includes an electrical connection socket, at least one guiding member, at least one guiding rail and a cover. The electrical connection socket is disposed in the case body for inserting an electrical connector of the electronic card thereinto. The guiding member is disposed in the case body and provides a guiding slot extending along a guiding direction. The guiding direction is parallel to a direction in which the electrical connector is inserted into the electrical connection socket. The guiding rail includes a sliding portion sliding in the guiding slot and a lower support portion extending from the sliding portion for guiding the electronic card to pass through the insertion hole of the case body. The cover is pivoted to the guiding rail and for closing the insertion hole.

Abstract: An image-capturing device includes a fixing element, an image-capturing module, and a resilient friction element. The fixing element includes a fixed friction face. The image-capturing module includes a journal portion connected rotatably to the fixing element, and a main body connected to the journal portion and having a lens. The journal portion has an outer surface facing the friction face and rotatable relative to the friction face, and at least one accommodating groove formed in the outer surface. The resilient friction element is disposed on the outer surface of the journal portion, and includes at least one friction portion spanning the accommodating groove. The friction portion is in frictional contact with the friction face, and is deformed and compressed into the accommodating groove by the friction face.

Abstract: A card reader is disposed in a case body of an electronic device for connecting an electronic card. The card reader includes an electrical connection socket, at least one guiding member, at least one guiding rail and a cover. The electrical connection socket is disposed in the case body for inserting an electrical connector of the electronic card thereinto. The guiding member is disposed in the case body and provides a guiding slot extending along a guiding direction. The guiding direction is parallel to a direction in which the electrical connector is inserted into the electrical connection socket. The guiding rail includes a sliding portion sliding in the guiding slot and a lower support portion extending from the sliding portion for guiding the electronic card to pass through the insertion hole of the case body. The cover is pivoted to the guiding rail and for closing the insertion hole.