Abstract: A polarization-independent, optical circulator is formed in silicon photonics. The polarization-independent, optical circulator uses an optical splitter having two couplers and two waveguides joining the two couplers. One of the two waveguides is thinner than the other to create a large effective index difference between TE and TM modes transmitted through the one waveguide. Polarization rotators, including reciprocal and/or non-reciprocal rotators, are further used to create the optical circulator.

Abstract: Provided is a game system where a player of a game can contribute to a team by an action. The game system includes a character action control unit that controls actions of a player character in the play field based on instructions of the player, a point giving control unit configured to add a number of points associated with a neutral character to a point value associated with the player character in response to the neutral character reaching a predetermined state relative to the player character, a scoring unit configured to convert the point value associated with the player character to a score of its team when the player character is located in a predetermined area provided in the play field and completes a score transferring operation, and an outcome determination unit configured to determine an outcome of the game by comparing scores associated with different teams.

Abstract: An interactive display system comprises at least one display unit (3), at least one sensing unit, and at least one control unit. The control unit(s) is/are configured to use the sensing unit(s) to detect a certain combination of user actions, e.g. a combination of a user (51) pointing to an area of the display unit(s) and a user action of a different type, and to use the display unit(s) to display a machine readable code, e.g. a QR code, in dependence on the certain combination of user actions being detected.

Abstract: There is provided a lighting apparatus and a method for reducing discomfort glare. The method comprises a step of providing a first portion of light radiation in a first incident angle range; and another step of providing a second portion of light radiation in a second incident angle range consecutive to the first incident angle range. The first incident angle range is greater than the second incident angle range viewed from a vertically downward direction of a light source emitting the light radiation, and the correlated color temperature of the first portion of light radiation is lower than that of the second portion of light radiation.

Abstract: Disclosed are an ultra-high molecular weight polyethylene resin for fiber and a preparation method thereof. The initial crystallinity of the resin is 60.5 to 90%, the volume average particle size is between 100 and 350 ?m, the particle-size distribution is 1.0-2.1, the molecular weight is 2-7 million, the tensile breaking stress is 30 to 60 MPa, the bulk density of the resin is 0.10 to 0.50 g/cm3, the infiltration time in the solvent decalin is 0.5 to 11 min, the decalin absorption amount of the resin is 2 to 50 g of decalin per 100 g of ultra-high molecular weight polyethylene resin, and the white oil absorption amount is 5 to 60 g of decalin per 100 g of ultra-high molecular weight polyethylene resin. The ethylene homopolymerization is performed using a slurry polymerization process in the presence of a main catalyst and a co-catalyst.

Abstract: The invention discloses a lighting device for a road lighting luminaire and a lighting luminaire comprising the lighting device. The lighting device comprises a reflector (301), which comprises a reflecting surface (3011) formed by revolving a parabolic curve around a first axis (y) through a predetermined angle, wherein said parabolic curve has an aperture at its vertex, said first axis axis being co-planar with said parabolic curve, and extending substantially perpendicularly to the axis (x) of symmetry of said parabolic curve, and being located at or outside of said aperture of said parabolic curve. The lighting device further comprises a LED light source (302), which is disposed at an entry to said reflecting surface, with said entry corresponding to said aperture of said parabolic curve. In this way, light distribution can be controlled in the same way in any plane containing the first axis within the range of the predetermined angle.

Abstract: The invention proposes a lighting device (250). The lighting device (250) for road lighting comprises a lighting module and a control module coupled to the lighting module, and configured to control the lighting module to radiate a first light beam (221) towards a first direction to generate a first lighting pattern on the road surface (B), when a first predetermined condition is satisfied, and to control the lighting module to radiate a second light beam (231) towards a second direction to generate a second lighting pattern on the road surface (A), when a second predetermined condition is satisfied, wherein the first direction is oriented to go along the traffic direction and the second direction is oriented to go opposite the traffic direction.

Abstract: A power MOSFET has a main-FET (MFET) and an embedded current sensing-FET (SFET). MFET gate runners are coupled to SFET gate runners by isolation gate runners (IGRs) in a buffer space between the MFET and the SFET. In one embodiment, n IGRs (i=1 to n) couple n+1 gates of a first portion of the MFET (304) to n gates of the SFET. The IGRs have zigzagged central portions where each SFET gate runner is coupled via the IGRs to two MFET gate runners. The zigzagged central portions provide barriers that block parasitic leakage paths, between sources of the SFET and sources of the MFET, for all IGRs except the outboard sides of the first and last IGRs. These may be blocked by increasing the body doping in regions surrounding the remaining leakage paths. The IGRs have substantially no source regions.

Abstract: Disclosed are an ultra-high molecular weight polyethylene resin for fiber and a preparation method thereof. The initial crystallinity of the resin is 60.5 to 90%, the volume average particle size is between 100 and 350 ?m, the particle-size distribution is 1.0-2.1, the molecular weight is 2-7 million, the tensile breaking stress is 30 to 60 MPa, the bulk density of the resin is 0.10 to 0.50 g/cm3, the infiltration time in the solvent decalin is 0.5 to 11 min, the decalin absorption amount of the resin is 2 to 50 g of decalin per 100 g of ultra-high molecular weight polyethylene resin, and the white oil absorption amount is 5 to 60 g of decalin per 100 g of ultra-high molecular weight polyethylene resin. The ethylene homopolymerization is performed using a slurry polymerization process in the presence of a main catalyst and a co-catalyst.

Abstract: The invention proposes a lighting device (250). The lighting device (250) for road lighting comprises a lighting module and a control module coupled to the lighting module, and configured to control the lighting module to radiate a first light beam (221) towards a first direction to generate a first lighting pattern on the road surface (B), when a first predetermined condition is satisfied, and to control the lighting module to radiate a second light beam (231) towards a second direction to generate a second lighting pattern on the road surface (A), when a second predetermined condition is satisfied, wherein the first direction is oriented to go along the traffic direction and the second direction is oriented to go opposite the traffic direction.

Abstract: There is provided a lighting apparatus and a method for reducing discomfort glare. The method comprises a step of providing a first portion of light radiation in a first incident angle range; and another step of providing a second portion of light radiation in a second incident angle range consecutive to the first incident angle range. The first incident angle range is greater than the second incident angle range viewed from a vertically downward direction of a light source emitting the light radiation, and the correlated color temperature of the first portion of light radiation is lower than that of the second portion of light radiation.

Abstract: A power MOSFET includes a semiconductor substrate with an upper surface, a cavity of a first depth in the substrate whose sidewall extends to the upper surface, a dielectric liner in the cavity, a gate conductor within the dielectric liner extending to or above the upper surface, body region(s) within the substrate of a second depth, separated from the gate conductor in a lower cavity region by first portion(s) of the dielectric liner of a first thickness, and source region(s) within the body region(s) extending to a third depth that is less than the second depth. The source region(s) are separated from the gate conductor by a second portion of the dielectric liner of a second thickness at least in part greater than the first thickness. The dielectric liner has a protrusion extending laterally into the gate conductor away from the body region(s) at or less than the third depth.

Abstract: A power MOSFET includes a semiconductor substrate with an upper surface, a cavity of a first depth in the substrate whose sidewall extends to the upper surface, a dielectric liner in the cavity, a gate conductor within the dielectric liner extending to or above the upper surface, body region(s) within the substrate of a second depth, separated from the gate conductor in a lower cavity region by first portion(s) of the dielectric liner of a first thickness, and source region(s) within the body region(s) extending to a third depth that is less than the second depth. The source region(s) are separated from the gate conductor by a second portion of the dielectric liner of a second thickness at least in part greater than the first thickness. The dielectric liner has a protrusion extending laterally into the gate conductor away from the body region(s) at or less than the third depth.

Abstract: The invention discloses a lighting device for a road lighting luminaire and a lighting luminaire comprising the lighting device. The lighting device comprises a reflector (301), which comprises a reflecting surface (3011) formed by revolving a parabolic curve around a first axis (y) through a predetermined angle, wherein said parabolic curve has an aperture at its vertex, said first axis axis being co-planar with said parabolic curve, and extending substantially perpendicularly to the axis (x) of symmetry of said parabolic curve, and being located at or outside of said aperture of said parabolic curve. The lighting device further comprises a LED light source (302), which is disposed at an entry to said reflecting surface, with said entry corresponding to said aperture of said parabolic curve. In this way, light distribution can be controlled in the same way in any plane containing the first axis within the range of the predetermined angle.

Abstract: A power MOSFET includes a semiconductor substrate with an upper surface, a cavity of a first depth in the substrate whose sidewall extends to the upper surface, a dielectric liner in the cavity, a gate conductor within the dielectric liner extending to or above the upper surface, body region(s) within the substrate of a second depth, separated from the gate conductor in a lower cavity region by first portion(s) of the dielectric liner of a first thickness, and source region(s) within the body region(s) extending to a third depth that is less than the second depth. The source region(s) are separated from the gate conductor by a second portion of the dielectric liner of a second thickness at least in part greater than the first thickness. The dielectric liner has a protrusion extending laterally into the gate conductor away from the body region(s) at or less than the third depth.

Abstract: A trench gate transistor is formed from a semiconductor substrate with its upper surface covered in an oxide dielectric layer. The trench gate transistor has a drain region, a body region, source region and a trench lined with a gate insulator that electrically insulates a conductive gate electrode formed in the trench from the body region. The body region has a sloping upper surface that extends away from the trench towards the drain region. The sloping upper surface is formed by exposing the oxide dielectric layer to an oxidized atmosphere, through an opening in a mask, so as to form a dielectric region. The dielectric region includes the oxide dielectric layer and a sacrificial area of the semiconductor substrate.

Abstract: A power MOSFET has a main-FET (MFET) and an embedded current sensing-FET (SFET). MFET gate runners are coupled to SFET gate runners by isolation gate runners (IGRs) in a buffer space between the MFET and the SFET. In one embodiment, n IGRs (i=1 to n) couple n+1 gates of a first portion of the MFET (304) to n gates of the SFET. The IGRs have zigzagged central portions where each SFET gate runner is coupled via the IGRs to two MFET gate runners. The zigzagged central portions provide barriers that block parasitic leakage paths, between sources of the SFET and sources of the MFET, for all IGRs except the outboard sides of the first and last IGRs. These may be blocked by increasing the body doping in regions surrounding the remaining leakage paths. The IGRs have substantially no source regions.

Abstract: A power MOSFET includes a semiconductor substrate with an upper surface, a cavity of a first depth in the substrate whose sidewall extends to the upper surface, a dielectric liner in the cavity, a gate conductor within the dielectric liner extending to or above the upper surface, body region(s) within the substrate of a second depth, separated from the gate conductor in a lower cavity region by first portion(s) of the dielectric liner of a first thickness, and source region(s) within the body region(s) extending to a third depth that is less than the second depth. The source region(s) are separated from the gate conductor by a second portion of the dielectric liner of a second thickness at least in part greater than the first thickness. The dielectric liner has a protrusion extending laterally into the gate conductor away from the body region(s) at or less than the third depth.

Abstract: Disclosed herein is a process for preparation of an ultra high molecular weight polyethylene catalyst, comprising: (1) under inert atmosphere, dispersing a magnesium halide in an inert solvent; (2) adding an alcohol to react with the magnesium halide, to form a solution or dispersion of a magnesium halide-alcohol adduct; (3) adding an alkyl aluminum halide to react with the magnesium halide-alcohol adduct, to form an intermediate product; (4) optionally, subjecting the intermediate product to an ultrasonic wave treatment; (5) adding a titanium compound to perform Ti-supporting reaction; (6) optionally, subjecting the reaction mixture from step (5) to an ultrasonic wave treatment; and (7) recovering solid particles, to obtain the ultra high molecular weight polyethylene catalyst, wherein at least one of steps (4) and (6) is present.