Patents by Inventor Wenbo YAN

Wenbo YAN has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20210265157
    Abstract: Processing methods for forming a silicon nitride film comprising exposing a metal surface to a silicon precursor, a nitrogen-containing reactant and a hydrogen-containing plasma at a temperature less than or equal to about 250° C. to form a silicon nitride film with a low etch rate without damaging the metal surface.
    Type: Application
    Filed: May 10, 2021
    Publication date: August 26, 2021
    Applicant: Applied Materials, Inc.
    Inventors: Wenbo Yan, Cong Trinh, Ning Li, Mihaela Balseanu, Li-Qun Xia, Maribel Maldonado-Garcia
  • Patent number: 11017997
    Abstract: Processing methods for forming a silicon nitride film comprising exposing a metal surface to a silicon precursor, a nitrogen-containing reactant and a hydrogen-containing plasma at a temperature less than or equal to about 250° C. to form a silicon nitride film with a low etch rate without damaging the metal surface.
    Type: Grant
    Filed: January 11, 2018
    Date of Patent: May 25, 2021
    Assignee: APPLIED MATERIALS, INC.
    Inventors: Wenbo Yan, Cong Trinh, Ning Li, Mihaela Balseanu, Li-Qun Xia, Maribel Maldonado-Garcia
  • Publication number: 20210043448
    Abstract: Processing platforms having a central transfer station with a robot and an environment having greater than or equal to about 0.1% by weight water vapor, a pre-clean chamber connected to a side of the transfer station and a batch processing chamber connected to a side of the transfer station. The processing platform configured to pre-clean a substrate to remove native oxides from a first surface, form a blocking layer using a alkylsilane and selectively deposit a film. Methods of using the processing platforms and processing a plurality of wafers are also described.
    Type: Application
    Filed: October 27, 2020
    Publication date: February 11, 2021
    Applicant: Applied Materials, Inc.
    Inventors: Ning Li, Mihaela A. Balseanu, Li-Qun Xia, Dongqing Yang, Lala Zhu, Malcolm J. Bevan, Theresa Kramer Guarini, Wenbo Yan
  • Publication number: 20190348271
    Abstract: Processing methods for forming a silicon nitride film comprising exposing a metal surface to a silicon precursor, a nitrogen-containing reactant and a hydrogen-containing plasma at a temperature less than or equal to about 250° C. to form a silicon nitride film with a low etch rate without damaging the metal surface.
    Type: Application
    Filed: January 11, 2018
    Publication date: November 14, 2019
    Inventors: Wenbo Yan, Cong Trinh, Ning Li, Mihaela Balseanu, Li-Qun Xia, Maribel Maldonado-Garcia
  • Patent number: 10170298
    Abstract: Processes for depositing SiO2 films on a wafer surface utilizing an aminosilane compound as a silicon precursor are described.
    Type: Grant
    Filed: November 7, 2017
    Date of Patent: January 1, 2019
    Assignee: APPLIED MATERIALS, INC.
    Inventors: Wenbo Yan, Cong Trinh, Ning Li, Victor Nguyen, Mihaela Balseanu, Li-Qun Xia, Mark Saly
  • Publication number: 20180211833
    Abstract: Processing platforms having a central transfer station with a robot and an environment having greater than or equal to about 0.1% by weight water vapor, a pre-clean chamber connected to a side of the transfer station and a batch processing chamber connected to a side of the transfer station. The processing platform configured to pre-clean a substrate to remove native oxides from a first surface, form a blocking layer using a alkylsilane and selectively deposit a film. Methods of using the processing platforms and processing a plurality of wafers are also described.
    Type: Application
    Filed: January 24, 2018
    Publication date: July 26, 2018
    Inventors: Ning Li, Mihaela Balseanu, Li-Qun Xia, Dongqing Yang, Lala Zhu, Malcolm J. Bevan, Theresa Kramer Guarini, Wenbo Yan
  • Publication number: 20180076023
    Abstract: Processes for depositing SiO2 films on a wafer surface utilizing an aminosilane compound as a silicon precursor are described.
    Type: Application
    Filed: November 7, 2017
    Publication date: March 15, 2018
    Inventors: Wenbo Yan, Cong Trinh, Ning Li, Victor Nguyen, Mihaela Balseanu, Li-Qun Xia, Mark Saly
  • Patent number: 9875888
    Abstract: Processes for depositing SiO2 films on a wafer surface utilizing an aminosilane compound as a silicon precursor are described.
    Type: Grant
    Filed: October 1, 2015
    Date of Patent: January 23, 2018
    Assignee: Applied Materials, Inc.
    Inventors: Wenbo Yan, Cong Trinh, Ning Li, Victor Nguyen, Mihaela Balseanu, Li-Qun Xia, Mark Saly
  • Publication number: 20160099143
    Abstract: Processes for depositing SiO2 films on a wafer surface utilizing an aminosilane compound as a silicon precursor are described.
    Type: Application
    Filed: October 1, 2015
    Publication date: April 7, 2016
    Inventors: Wenbo Yan, Cong Trinh, Ning Li, Victor Nguyen, Mihaela Balseanu, Li-Qun Xia, Mark Saly
  • Patent number: 9297073
    Abstract: Embodiments disclosed herein generally relate to the processing of substrates, and more particularly, relate to methods for accurate control of film thickness using deposition-etch cycles. Particularly, embodiments of the present disclosure may be used in controlling film thickness during filling high aspect ratio features.
    Type: Grant
    Filed: February 19, 2015
    Date of Patent: March 29, 2016
    Assignee: APPLIED MATERIALS, INC.
    Inventors: Ning Li, Wenbo Yan, Victor Nguyen, Cong Trinh, Mihaela Balseanu, Li-Qun Xia
  • Publication number: 20150299856
    Abstract: Embodiments disclosed herein generally relate to the processing of substrates, and more particularly, relate to methods for accurate control of film thickness using deposition-etch cycles. Particularly, embodiments of the present disclosure may be used in controlling film thickness during filling high aspect ratio features.
    Type: Application
    Filed: February 19, 2015
    Publication date: October 22, 2015
    Applicant: APPLIED MATERIALS, INC.
    Inventors: Ning LI, Wenbo YAN, Victor NGUYEN, Cong TRINH, Mihaela BALSEANU, Li-Qun XIA