Patents by Inventor Wenbo YAN

Wenbo YAN has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • High temperature silicon oxide atomic layer deposition technology
    Patent number: 9875888
    Abstract: Processes for depositing SiO2 films on a wafer surface utilizing an aminosilane compound as a silicon precursor are described.
    Type: Grant
    Filed: October 1, 2015
    Date of Patent: January 23, 2018
    Assignee: Applied Materials, Inc.
    Inventors: Wenbo Yan, Cong Trinh, Ning Li, Victor Nguyen, Mihaela Balseanu, Li-Qun Xia, Mark Saly
  • High Temperature Silicon Oxide Atomic Layer Deposition Technology
    Publication number: 20160099143
    Abstract: Processes for depositing SiO2 films on a wafer surface utilizing an aminosilane compound as a silicon precursor are described.
    Type: Application
    Filed: October 1, 2015
    Publication date: April 7, 2016
    Inventors: Wenbo Yan, Cong Trinh, Ning Li, Victor Nguyen, Mihaela Balseanu, Li-Qun Xia, Mark Saly
  • Accurate film thickness control in gap-fill technology
    Patent number: 9297073
    Abstract: Embodiments disclosed herein generally relate to the processing of substrates, and more particularly, relate to methods for accurate control of film thickness using deposition-etch cycles. Particularly, embodiments of the present disclosure may be used in controlling film thickness during filling high aspect ratio features.
    Type: Grant
    Filed: February 19, 2015
    Date of Patent: March 29, 2016
    Assignee: APPLIED MATERIALS, INC.
    Inventors: Ning Li, Wenbo Yan, Victor Nguyen, Cong Trinh, Mihaela Balseanu, Li-Qun Xia
  • ACCURATE FILM THICKNESS CONTROL IN GAP-FILL TECHNOLOGY
    Publication number: 20150299856
    Abstract: Embodiments disclosed herein generally relate to the processing of substrates, and more particularly, relate to methods for accurate control of film thickness using deposition-etch cycles. Particularly, embodiments of the present disclosure may be used in controlling film thickness during filling high aspect ratio features.
    Type: Application
    Filed: February 19, 2015
    Publication date: October 22, 2015
    Applicant: APPLIED MATERIALS, INC.
    Inventors: Ning LI, Wenbo YAN, Victor NGUYEN, Cong TRINH, Mihaela BALSEANU, Li-Qun XIA