Abstract: A semiconductor device includes an active region, a LOCOS region formed within the active region and that extends vertically above a top surface of the active region, a gate region formed above the top surface of the active region, and a polysilicon resistor having a bottom surface that is offset vertically and physically isolated from a top surface of the LOCOS region. The active region includes a source region laterally disposed from the gate region, a drain region laterally disposed from the gate region, and a drift region laterally disposed between the gate region and the drain region. The polysilicon resistor is formed above the drift region. The active region further includes a first charge balance region formed in the active region below the drift region.

Abstract: A computer-executable method for generating a side-by-side three-dimensional (3D) image includes the steps of creating a 3D mesh and estimating depth information of the raw image. The method further includes the steps of updating the left mesh area and the right mesh area of the 3D mesh based on the estimated depth information of the raw image and projecting each of the mesh vertices of the left mesh area onto a coordinate system of the side-by-side 3D image based on a left eye position, and projecting each of the mesh vertices of the right mesh area onto the coordinate system of the side-by-side 3D image based on a right eye position. The method further obtains the side-by-side 3D image by coloring the left mesh area and the right mesh area projected onto the coordinate system of the side-by-side 3D image based on the raw image.

Abstract: An optical element driving mechanism is provided and includes a fixed assembly, a movable assembly, a driving assembly and a stopping assembly. The fixed assembly has a main axis. The movable assembly is configured to connect an optical element, and the movable assembly is movable relative to the fixed assembly. The driving assembly is configured to drive the movable assembly to move relative to the fixed assembly. The stopping assembly is configured to limit the movement of the movable assembly relative to the fixed assembly within a range of motion.

Abstract: An air-floating guide rail device includes a guide rail unit, a slider unit, and a linear motor unit. The guide rail unit includes a guide rail body and two air-floating block sets made of a material different from that of the guide rail body and each including top and side air-floating blocks. The slider unit includes a main sliding seat and two lateral sliding seats connected integrally to the main sliding seat and each having first and second guiding surfaces transverse to each other and disposed respectively adjacent to corresponding top and side air-floating blocks, and first and second air guiding passages connecting the first and second guiding surfaces to the external environment. The linear motor unit includes a stator and a mover mounted fixedly to the main sliding seat and movable relative to the stator for driving linear movement of the slider unit relative to the guide rail unit.

Abstract: Improved inner spacers for semiconductor devices and methods of forming the same are disclosed.

Abstract: A displaceable rotating shaft structure and a foldable device having the rotating shaft structure are disclosed. The displaceable rotating shaft structure comprises a support, a rotating shaft, a connecting rod assembly, a guide assembly, and a torsion assembly. The support has a supporting portion. The connecting rod assembly has a first outer end that is rotatably connected to the linking section of the rotating shaft and a second outer end that is pivotally connected to the supporting portion. The guide assembly has a guide rod. The guide rod is configured to displace relative to the supporting portion. When the rotating shaft is rotated, the rotating shaft drives the connecting rod assembly to adjust the angle and the total length of a joint of connecting rods of the connecting rod assembly, a distance between the rotating shaft and the support is changed through the guide assembly.

Abstract: An exemplary embodiment of the invention provides an image processing method for a virtual reality display system. The method includes: enabling a first shared buffer and a second shared buffer; performing an image capturing operation to obtain a first image from a virtual reality scene; storing the first image to the first shared buffer; in response to that the storing of the first image is finished, reading the first image from the first shared buffer; performing a depth estimation operation on the first image to obtain depth information corresponding to the first image; storing the depth information to the second shared buffer; in response to that the storing of the depth information is finished, reading the depth information from the second shared buffer; performing an image generation operation according to the depth information to generate a pair of second images corresponding to the virtual reality scene; and outputting the pair of second images by a display of the virtual reality display system.

Abstract: A 3D display system and a 3D display method are provided. The 3D display system includes a 3D display, a memory, and a processor. The processor is coupled to the 3D display and the memory and is configured to execute the following steps. As a first type application program is executed, an image content of the first type application program is captured, and a stereo format image is generated according to the image content of the first type application program. The stereo format image is delivered to a runtime complying with a specific development standard through an application program interface complying with the specific development standard. A display frame processing associated with the 3D display is performed on the stereo format image through the runtime, and a 3D display image content generated by the display frame processing is provided to the 3D display for displaying.

Abstract: Disclosed are an image display method and a 3d display system. The method is adapted to the 3d display system including a 3d display device and includes the following steps. A first image and a second image are obtained by splitting an input image according to a 3d image format. Whether the input image is a 3D format image complying with the 3D image format is determined through a stereo matching processing performed on the first image and the second image. An image interweaving process is enabled to be performed on the input image to generate an interweaving image in response to determining that the input image is the 3D format image complying with the 3D image format, and the interweaving image is displayed via the 3D display device.

Abstract: A high-voltage semiconductor device structure is provided. The high-voltage semiconductor device structure includes a semiconductor substrate, a source ring in the semiconductor substrate, and a drain region in the semiconductor substrate. The high-voltage semiconductor device structure also includes a doped ring surrounding sides and a bottom of the source ring and a well region surrounding sides and bottoms of the drain region and the doped ring. The well region has a conductivity type opposite to that of the doped ring. The high-voltage semiconductor device structure further includes a conductor electrically connected to the drain region and extending over and across a periphery of the well region. In addition, the high-voltage semiconductor device structure includes a shielding element ring between the conductor and the semiconductor substrate. The shielding element ring extends over and across the periphery of the well region.

Abstract: A semiconductor package is provided, which includes a first chip disposed over a first package substrate, a molding compound surrounding the first chip, a first thermal interface material disposed over the first chip and the molding compound, a heat spreader disposed over the thermal interface material, and a second thermal interface material disposed over the heat spreader. The first thermal interface material and the second thermal interface material have an identical width.

Abstract: Various embodiments of the present application are directed towards a control gate layout to improve an etch process window for word lines. In some embodiments, an integrated chip comprises a memory array, an erase gate, a word line, and a control gate. The memory array comprises a plurality of cells in a plurality of rows and a plurality of columns. The erase gate and the word line are elongated in parallel along a row of the memory array. The control gate is elongated along the row and is between and borders the erase gate and the word line. Further, the control gate has a pad region protruding towards the erase gate and the word line. Because the pad region protrudes towards the erase gate and the word line, a width of the pad region is spread between word-line and erase-gate sides of the control gate.

Abstract: A method of manufacturing a semiconductor device includes forming a multi-layer stack of alternating first layers of a first semiconductor material and second layers of a second semiconductor material on a semiconductor substrate, forming a first recess through the multi-layer stack, and laterally recessing sidewalls of the second layers of the multi-layer stack. The sidewalls are adjacent to the first recess. The method further includes forming inner spacers with respective seams adjacent to the recessed second layers of the multi-layer stack and performing an anneal treatment on the inner spacers to close the respective seams.

Abstract: In example implementations, a computing device is provided. The computing device includes an expansion interface, a first device, a second device, and a processor communicatively coupled to the expansion interface. The expansion interface includes a plurality of slots. Two slots of the plurality of slots are controlled by a single reset signal. The first device is connected to a first slot of the two slots and has a feature that is compatible with the single reset signal. The second device is connected to a second slot of the two slots and does not have the feature compatible with the single reset signal. The process is to detect the first device connected to the first slot and the second device connected to the second slot and disable the feature by preventing the first slot and the second slot from receiving the single reset signal.

Abstract: A matte film for hot pressing and a manufacturing method thereof are provided. The manufacturing method includes steps of forming at least one polyester composition into an unstretched polyester thick film and stretching the unstretched polyester thick film in a machine direction (MD) and a transverse direction (TD). The polyester composition includes 81% to 97.9497% by weight of a polyester resin, 0.02% to 2% by weight of an antioxidative ingredient, 0.0003% to 1% by weight of a nucleating agent, 0.01% to 2% by weight of a flow aid, 0.01% to 2% by weight of a polyester modifier, 0.01% to 2% by weight of an inorganic filler, and 2% to 10% by weight of silica particles. The polyester resin has an intrinsic viscosity between 0.60 dl/g and 0.80 dl/g.

Abstract: A semiconductor device includes an active region, a LOCOS region formed within the active region and that extends vertically above a top surface of the active region, a gate region formed above the top surface of the active region, and a polysilicon resistor having a bottom surface that is offset vertically and physically isolated from a top surface of the LOCOS region. The active region includes a source region laterally disposed from the gate region, a drain region laterally disposed from the gate region, and a drift region laterally disposed between the gate region and the drain region. The polysilicon resistor is formed above the drift region. The active region further includes a first charge balance region formed in the active region below the drift region.

Abstract: A container with a handle includes a container body. The container body has a peripheral edge extending outward to form a ring portion. The ring portion is provided with a first slot penetrating through the ring portion. The first slot cuts the ring portion to form a first handle portion and a first edge portion completely connected to the container body. In addition, the ring portion is further provided with a second slot penetrating through the ring portion. The first slot and the second slot are respectively located on two opposite sides of the ring portion. The second slot cuts the ring portion to form a second handle portion and a second edge portion completely connected to the container body. The first handle portion and the second handle portion each have two ends connected to the container body and may be pulled up as the handle.

Abstract: A semiconductor device includes an active region, a LOCOS region formed within the active region and that extends vertically above a top surface of the active region, a gate region formed above the top surface of the active region, and a polysilicon resistor having a bottom surface that is offset vertically and physically isolated from a top surface of the LOCOS region. The active region includes a source region laterally disposed from the gate region, a drain region laterally disposed from the gate region, and a drift region laterally disposed between the gate region and the drain region. The polysilicon resistor is formed above the drift region. The active region further includes a first charge balance region formed in the active region below the drift region.

Abstract: The present disclosure relates to semiconductor structures and, more particularly, to an ultra-high voltage resistor and methods of manufacture. The structure includes at least one resistor coupled to a well of a doped substrate, the at least one resistor being separated vertically from the well by an isolation region with one end of the resistor being attached to an input pad and another end coupled to circuitry.

Abstract: The present disclosure relates to semiconductor structures and, more particularly, to an ultra-high voltage resistor and methods of manufacture. The structure includes at least one resistor coupled to a well of a doped substrate, the at least one resistor being separated vertically from the well by an isolation region with one end of the resistor being attached to an input pad and another end coupled to circuitry.