Abstract: A method for fabricating a hybrid low dielectric constant intermetal dielectric layer with improved reliability for multilevel electrical interconnections on integrated circuits is achieved. After forming metal lines for interconnecting the semiconductor devices, a protective insulating layer composed of a low-k fluorine-doped oxide (k=3.5) is deposited. A porous low-k spin-on dielectric layer (k less than 3) is formed in the gaps between the metal lines to further minimize the intralevel capacitance. A more dense low-k dielectric layer, such as FSG, is deposited on the porous layer to provide improved structural mechanical strength and over the metal lines to provide reduced intralevel capacitance. Via holes are etched in the FSG and are filled with metal plugs and the method can be repeated for additional metal levels to complete the multilevel interconnections on the integrated circuit.

Abstract: Two approaches are proposed for forming an inter-metal dielectric layer with improved metal damage characteristics. This is of utmost importance for sub-quarter micron feature sizes, where thin metal lines are particularly susceptible to damage and where the HDP-CVD processes, which are used because of their excellent gap filling characteristics, are apt to cause metal damage. In approach one, a partially processed semiconductor wafer is provided containing a blanket layer of metal. A blanket dielectric layer is deposited. This layer could, for example, be silicone oxide, silicon nitride or silicone oxynitride; and the deposition process could be APCVD, LPCVD, 03-TEOS CVD or PECVD. The layer thickness could be in the range from about 0.01 microns to about 0.2 microns. Patterning and etching the blanket metal layer and protective dielectric layer results in the desired metal structure, except with a dielectric cap. The HDP-CVD insulating layer can now be deposited without concern for metal damage.

Abstract: Disclosed is an automated staining apparatus including an arm moveable in three dimensions, and a hollow tip head located on the arm including integral reagent tip head, wash tip and blow tip for selectively dispensing gas and liquid onto microscope slides. Also disclosed are various sub-components of the apparatus that are specifically adapted to the processing of specimens on slides.

Abstract: An apparatus of forming non-agglomerated nanostructured ceramic (n-ceramic) powders from metalorganic precursors combines rapid thermal decomposition of a precursor/carrier gas stream in a hot tubular reactor with rapid condensation of the product particles on a cold substrate under a reduced inert gas pressure of 1-50 mbar. A wide variety of metalorganic precursors is available. The apparatus is particularly suitable for formation of n-SiC.sub.x N.sub.y powders from hexamethyl-disilizane or the formation of n-ZrO.sub.x C.sub.y powders from zirconium tertiary butoxide. The n-SiC.sub.x N.sub.y compounds can be further reacted to form SiC or Si.sub.3 N.sub.4 whiskers, individually or in random-weave form, by heating in a hydrogen or ammonia atmosphere. The non-agglomerated n-ceramic powders form uniformly dense powder compacts by cold pressing which can be sintered to theoretical density at temperatures as low as 0.5 Tm.