Abstract: A heat dissipation system of an electronic device including a body, a plurality of heat sources disposed in the body, and at least one centrifugal heat dissipation fan disposed in the body is provided. The centrifugal heat dissipation fan includes a housing and an impeller disposed in the housing on an axis. The housing has at least one inlet on the axis and has a plurality of outlets in different radial directions, and the plurality of outlets respectively correspond to the plurality of heat sources.

Abstract: Examples disclosed herein relate to device. The device includes a substrate, a plurality of adjacent pixel-defining layer (PDL structures disposed over the substrate, and a plurality of sub-pixels. The PDL structure have a top surface coupled to adjacent sidewalls of the PDL structure. The plurality of sub-pixels are defined by the PDL structures. Each sub-pixel includes an anode, an organic light emitting diode (OLED), a cathode, and an encapsulation layer. The organic light emitting diode (OLED) material disposed over the anode. The OLED material extends over the top surface of the PDL structure past the adjacent sidewalls. The cathode is disposed over the OLED material. The cathode extends over the top surface of the PDL structure past the adjacent sidewalls. The encapsulation layer is disposed over the cathode. The encapsulation layer has a first sidewall and a second sidewall.

Abstract: Semiconductor devices and methods of forming the same are provided. In some embodiments, a method includes receiving a workpiece having a redistribution layer disposed over and electrically coupled to an interconnect structure. In some embodiments, the method further includes patterning the redistribution layer to form a recess between and separating a first conductive feature and a second conductive feature of the redistribution layer, where corners of the first conductive feature and the second conductive feature are defined adjacent to and on either side of the recess. The method further includes depositing a first dielectric layer over the first conductive feature, the second conductive feature, and within the recess. The method further includes depositing a nitride layer over the first dielectric layer. In some examples, the method further includes removing portions of the nitride layer disposed over the corners of the first conductive feature and the second conductive feature.

Abstract: Improved inner spacers for semiconductor devices and methods of forming the same are disclosed.

Abstract: An exemplary embodiment of the invention provides an image processing method for a virtual reality display system. The method includes: enabling a first shared buffer and a second shared buffer; performing an image capturing operation to obtain a first image from a virtual reality scene; storing the first image to the first shared buffer; in response to that the storing of the first image is finished, reading the first image from the first shared buffer; performing a depth estimation operation on the first image to obtain depth information corresponding to the first image; storing the depth information to the second shared buffer; in response to that the storing of the depth information is finished, reading the depth information from the second shared buffer; performing an image generation operation according to the depth information to generate a pair of second images corresponding to the virtual reality scene; and outputting the pair of second images by a display of the virtual reality display system.

Abstract: An X-ray device, including a sensor panel and a flexible scintillator structure disposed on the sensor panel, is provided. A manufacturing method of the X-ray device is also provided.

Abstract: A 3D display system and a 3D display method are provided. The 3D display system includes a 3D display, a memory, and a processor. The processor is coupled to the 3D display and the memory and is configured to execute the following steps. As a first type application program is executed, an image content of the first type application program is captured, and a stereo format image is generated according to the image content of the first type application program. The stereo format image is delivered to a runtime complying with a specific development standard through an application program interface complying with the specific development standard. A display frame processing associated with the 3D display is performed on the stereo format image through the runtime, and a 3D display image content generated by the display frame processing is provided to the 3D display for displaying.

Abstract: A semiconductor device structure includes a first dielectric wall, a plurality of first semiconductor layers vertically stacked and extending outwardly from a first side of the first dielectric wall, each first semiconductor layer has a first width, a plurality of second semiconductor layers vertically stacked and extending outwardly from a second side of the first dielectric wall, each second semiconductor layer has a second width, a plurality of third semiconductor layers disposed adjacent the second side of the first dielectric wall, each third semiconductor layer has a third width greater than the second width, a first gate electrode layer surrounding at least three surfaces of each of the first semiconductor layers, the first gate electrode layer having a first conductivity type, and a second gate electrode layer surrounding at least three surfaces of each of the second semiconductor layers, the second gate electrode layer having a second conductivity type opposite the first conductivity type.

Abstract: Disclosed are an image display method and a 3d display system. The method is adapted to the 3d display system including a 3d display device and includes the following steps. A first image and a second image are obtained by splitting an input image according to a 3d image format. Whether the input image is a 3D format image complying with the 3D image format is determined through a stereo matching processing performed on the first image and the second image. An image interweaving process is enabled to be performed on the input image to generate an interweaving image in response to determining that the input image is the 3D format image complying with the 3D image format, and the interweaving image is displayed via the 3D display device.

Abstract: A circuit board structure includes a circuit substrate having opposing first and second sides, a redistribution structure disposed at the first side, and a dielectric structure disposed at the second side. The circuit substrate includes a first circuit layer disposed at the first side and a second circuit layer disposed at the second side. The redistribution structure is electrically coupled to the circuit substrate and includes a first leveling dielectric layer covering the first circuit layer, a first thin-film dielectric layer disposed on the first leveling dielectric layer and having a material different from the first leveling dielectric layer, and a first redistributive layer disposed on the first thin-film dielectric layer and penetrating through the first thin-film dielectric layer and the first leveling dielectric layer to be in contact with the first circuit layer. The dielectric structure includes a second leveling dielectric layer disposed below the second circuit layer.

Abstract: A micro-electro-mechanical system (MEMS) microphone is provided. The MEMS microphone includes a substrate, a diaphragm, a backplate and a first protrusion. The substrate has an opening portion. The diaphragm is disposed on one side of the substrate and extends across the opening portion of the substrate. The backplate includes a plurality of acoustic holes. The backplate is disposed on one side of the diaphragm. An air gap is formed between the backplate and the diaphragm. The first protrusion extends from the backplate towards the air gap.

Abstract: A backlight module includes a light guide plate, a light source, a first prism sheet, and a second prism sheet. The light source is disposed on a light incident surface of the light guide plate. The first prism sheet is disposed on a side of a light exiting surface of the light guide plate and has multiple first prism structures facing the light guide plate. The second prism sheet has multiple second prism structures facing the light guide plate. An included angle between an extending direction of the first prism structures and an extending direction of the second prism structures is greater than or equal to 85 degrees and less than or equal to 95 degrees. An included angle between the extending direction of the second prism structures and the light incident surface is greater than or equal to 85 degrees and less than or equal to 95 degrees.

Abstract: A supported metallocene catalyst includes a carrier and a metallocene component. The carrier includes an inorganic oxide particle and an alkyl aluminoxane material. The inorganic oxide particle includes at least one inorganic oxide compound selected from the group consisting of an oxide of Group 3A and an oxide of Group 4A. The alkyl aluminoxane material includes an alkyl aluminoxane compound and an alkyl aluminum compound that is present in amount ranging from greater than 0.01 wt % to less than 14 wt % base on 100 wt % of the alkyl aluminoxane material. The metallocene component is supported on the carrier, and includes one of a metallocene compound containing a metal from Group 3B, a metallocene compound containing a metal from Group 4B, and a combination thereof. A method for preparing the supported metallocene catalyst and a method for preparing polyolefin using the supported metallocene catalyst are also disclosed.

Abstract: A method of manufacturing a semiconductor device includes forming a multi-layer stack of alternating first layers of a first semiconductor material and second layers of a second semiconductor material on a semiconductor substrate, forming a first recess through the multi-layer stack, and laterally recessing sidewalls of the second layers of the multi-layer stack. The sidewalls are adjacent to the first recess. The method further includes forming inner spacers with respective seams adjacent to the recessed second layers of the multi-layer stack and performing an anneal treatment on the inner spacers to close the respective seams.

Abstract: A centrifugal heat dissipation fan including a housing and an impeller disposed in the housing on an axis is provided. The housing has at least one inlet on the axis and has a plurality of outlets in different radial directions. A heat dissipation system of an electronic device is also provided.

Abstract: A system, including a tablet gaming table, allows casino dealers to connect with players both in-person and in Virtual Reality (VR). This system can be used for popular casino games such as blackjack or baccarat, and can also serve as a tool for casinos to increase player traffic while maximizing dealer employee efficiency.

Abstract: An ion source head structure of a semiconductor ion implanter including a filament, a filament clamp, a cathode, a cathode clamp, an insulation assembly is provided. The filament clamp clamps the filament. The cathode presents a shell shape and has a receiving space. The filament is located in the receiving space. The cathode clamp clamps the cathode. The insulation assembly is disposed between the filament clamp and the cathode clamp such that the filament clamp is insulated from the cathode clamp. The insulation assembly has a first surface, a second surface opposite to the first surface, and an outer surface between the first surface and the second surface, wherein the first surface of the insulation assembly is in contact with the filament clamp, and the second surface of the insulation assembly is in contact with the cathode clamp. A step difference exists on the outer surface of the insulation assembly.

Abstract: A system, including a tablet gaming table, allows casino dealers to connect with players both in-person and in Virtual Reality (VR). This system can be used for popular casino games such as blackjack or baccarat, and can also serve as a tool for casinos to increase player traffic while maximizing dealer employee efficiency.

Abstract: A method for purifying exhaust of waste gas using atomized fluid droplets combined with turbulent flow, including the following steps: a). atomizing the absorption or reacting fluids to microsized droplets; b). enabling waste gas to pass through the aforementioned absorption or reacting fluids and creating a turbulent flow to thoroughly react the waste gas with the droplets; c). reacting of harmful substances in the waste gas with droplets of the absorption or reacting fluids; d). implementing demisting treatment of the waste gas flow; e). discharging the treated waste gas. The aforementioned steps of the present invention enable the purification of waste gas without the need for packing, and achieve high removal efficiency and low energy consumption.

Abstract: A computer housing includes a shell having a side opening, a first side wall and a second side wall, and a support bracket rotatably mounted on the shell and having a head portion, a tail portion, and a support portion. Thus, when the support bracket is rotatable to a closed position, the tail portion of the support bracket is rested on the second side wall of the shell, and the support portion of the support bracket is received in an inside of the shell, and when the support bracket is rotatable to an open position, the tail portion of the support bracket is detached from the second side wall of the shell, and the support portion of the support bracket is detached from the inside of the shell.