Abstract: A clear aqueous formulation for topical application in the oral cavity of humans to treat leukoplakia contains water, &bgr;-carotene, a water miscible polyol, an unsaturated fatty acid ester, and a surfactant, preferably polyethoxylated castor oil or POE(20) sorbitan monooleate The formulation preferably also contains a pharmaceutically acceptable anti-oxidant, preferably d-alpha-tocopherol (vitamin E), and is in the form of an oral rinse or as a gel well suited for spreading on gums or other parts of the oral cavity. The formulation is applied in a gel form on a substantially regular daily basis to areas in the oral cavity where leukoplakia lesions are present. Persistent application of the gel results in substantial diminution or total elimination of the leukoplakia lesions.

Abstract: Acid-catalyzed positive resist compositions suitable for bilayer or multilayer lithographic applications are enabled by the use of a combination of (a) an acid-sensitive imaging polymer, (b) a radiation-sensitive acid generator, and (c) a non-polymeric silicon additive. The imaging polymer is preferably imageable with 193 nm or shorter wavelength imaging radiation. The resist compositions preferably contain at least about 5 wt. % silicon based on the weight of the imaging polymer. The compositions generally provide reduced line edge roughness compared to conventional silicon-containing resists.

Abstract: An organic semiconductor film is fabricated by applying a solution containing an organic semiconductor material and a solvent to a substrate, e.g., by solution casting, and evaporating the solvent. The characteristics of the substrate surface, the organic semiconductor material, and the process parameters are selected to provide desirable nucleation and crystal growth. The resultant organic semiconductor film contains a large area, e.g., a continuous area greater than 1 cm2, that exhibits a relatively high charge carrier mobility of at least about 10−4 cm2V−1s−1 room temperature.

Abstract: Acid-catalyzed positive resist compositions which are imageable with 193 nm radiation and/or possibly other radiation and are developable to form resist structures of improved development characteristics and improved etch resistance are enabled by the use of resist compositions containing imaging polymer having a monomer with a pendant group containing plural acid labile moieties. Preferred pendant groups containing plural acid labile moieties are characterized by the presence of a bulky end group.

Abstract: Acid-catalyzed positive resist compositions which are imageable with 193 nm radiation and/or possibly other radiation and are developable to form resist structures of improved development characteristics and improved etch resistance are enabled by the use of resist compositions containing imaging polymer having a 2-cyano acrylic monomer.

Abstract: Thiophene-containing photo acid generators having either of the following general formulas: 1

Abstract: Acid-catalyzed positive resist compositions which are imageable with 193 nm radiation and/or possibly other radiation and are developable to form resist structures of improved development characteristics and improved etch resistance are enabled by the use of resist compositions containing imaging polymer having a monomer with a pendant group containing plural acid labile moieties. Preferred pendant groups containing plural acid labile moieties are characterized by the presence of a bulky end group.

Abstract: The invention provides a device comprising an improved n-channel semiconducting film, the film formed from a fused-ring tetracarboxylic diimide compound which exhibits a field effect electron mobility greater than 0.001 cm2/Vs, advantageously greater than 0.03 cm2/Vs, in film form. Contemplated compounds include naphthalene 1,4,5,8, tetracarboxylic acid diimides, naphthalene 2,3,6,7 tetracarboxylic acid diimides, anthracene 2,3,6,7-tetracarboxylic acid diimides, and heterocyclic variants thereof. The n-channel compounds are capable of being significantly soluble in common organic solvents, allowing for solution deposition of active semiconductor films, and are also capable of possessing significant volatility, such that vapor phase deposition, where desired, is relatively facile. It is also possible for the compounds to display the desirably high n-channel mobilities and on/off ratios even when operated in air.

Abstract: This invention relates to crystalline pharmaceutically acceptable salts of an alpha 1a adrenergic receptor antagonist, Compound A, which are useful in the treatment of benign prostatic hyperplasia. Pharmaceutical compositions employing the crystalline salts, and processes for making and using the crystalline salts and pharmaceutical compositions of Compound A are also disclosed. This invention further relates to a process for obtaining enantiomerically pure intermediate useful for the synthesis of end product alpha 1a adrenergic receptor antagonists. The end product compounds are useful for the treatment of benign prostatic hyperplasia and for relaxing lower urinary tract tissue. The invention also relates to a process for preparing a class of dihydropyrimidinone compounds of which Compound A is a member, wherein the process involves deprotonating a dihydropyrimidinone compound and then coupling the deprotonated derivative with a primary amine.

Abstract: An organic semiconductor film is fabricated by applying a solution containing an organic semiconductor material and a solvent to a substrate, e.g., by solution casting, and evaporating the solvent. The characteristics of the substrate surface, the organic semiconductor material, and the process parameters are selected to provide desirable nucleation and crystal growth. The resultant organic semiconductor film contains a large area, e.g., a continuous area greater than 1 cm2, that exhibits a relatively high charge carrier mobility of at least about 10−4 cm2V−1s−1 room temperature.

Abstract: An organic semiconductor film is fabricated by applying a solution containing an organic semiconductor material and a solvent to a substrate, e.g., by solution casting, and evaporating the solvent. The characteristics of the substrate surface, the organic semiconductor material, and the process parameters are selected to provide desirable nucleation and crystal growth. The resultant organic semiconductor film contains a large area, e.g., a continuous area greater than 1 cm2, that exhibits a relatively high charge carrier mobility of at least about 10−4 cm2V−s−1 at room temperature.

Abstract: The invention provides a device comprising an improved n-channel semiconducting film, the film formed from a fused-ring tetracarboxylic diimide compound which exhibits a field effect electron mobility greater than 0.001 cm2/Vs, advantageously greater than 0.03 cm2/Vs, in film form. Contemplated compounds include naphthalene 1,4,5,8 tetracarboxylic acid diimides, naphthalene 2,3,6,7 tetracarboxylic acid diimides, anthracene 2,3,6,7-tetracarboxylic acid diimides, and heterocyclic variants thereof. The n-channel compounds are capable of being significantly soluble in common organic solvents, allowing for solution deposition of active semiconductor films, and are also capable of possessing significant volatility, such that vapor phase deposition, where desired, is relatively facile. It is also possible for the compounds to display the desirably high n-channel mobilities and on/off ratios even when operated in air.

Abstract: The novel process of this invention involves the stereoselective synthesis of certain 16-substituted 4-aza-5&agr;-androst-1-en-3-ones, and the useful intermediates obtained therein.