Patents by Inventor Wenjing Xu

Wenjing Xu has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20240243212
    Abstract: A heterojunction cell and a method for preparing same. The heterojunction cell comprises: a semiconductor substrate layer; and an intrinsic semiconductor composite layer, wherein the intrinsic semiconductor composite layer is located on the surface of at least one side of the semiconductor substrate layer, and the intrinsic semiconductor composite layer comprises: a bottom intrinsic layer; and a wide-band-gap intrinsic layer, which is located on the surface of the side of the bottom intrinsic layer that is away from the semiconductor substrate layer, the band gap of the wide-band-gap intrinsic layer being greater than the band gap of the bottom intrinsic layer. The band gap of a wide-band-gap intrinsic layer is larger, and when sunlight irradiates a heterojunction cell, photons, the energy of which is less than that of the band gap of the wide-band-gap intrinsic layer, cannot be subjected to parasitic absorption.
    Type: Application
    Filed: June 24, 2022
    Publication date: July 18, 2024
    Applicant: ANHUI HUASUN ENERGY CO., LTD.
    Inventors: Xiaohua XU, Ke XIN, Su ZHOU, Daoren GONG, Wenjing WANG, Chen LI, Mengying CHEN, Shangzhi CHENG
  • Publication number: 20240183028
    Abstract: Methods and apparatus for processing a substrate include cleaning and self-assembly monolayer (SAM) formation for subsequent reverse selective atomic layer deposition. An apparatus may include a process chamber with a processing volume and a substrate support including a pedestal, a remote plasma source fluidly coupled to the process chamber and configured to produce radicals or ionized gas mixture with radicals that flow into the processing volume to remove residue or oxides from a surface of the substrate, a first gas delivery system with a first ampoule configured to provide at least one first chemical into the processing volume to produce a SAM on the surface of the substrate, a heating system located in the pedestal and configured to heat a substrate by flowing gas on a backside of the substrate, and a vacuum system fluidly coupled to the process chamber and configured to control heating of the substrate.
    Type: Application
    Filed: February 15, 2024
    Publication date: June 6, 2024
    Inventors: Xiangjin XIE, Carmen LEAL CERVANTES, Feng CHEN, Lu CHEN, Wenjing XU, Aravind KAMATH, Cheng-Hsiung Matthew TSAI, Tae Hong HA, Alexander JANSEN, Xianmin TANG
  • Patent number: 11939666
    Abstract: Methods and apparatus for processing a substrate include cleaning and self-assembly monolayer (SAM) formation for subsequent reverse selective atomic layer deposition. An apparatus may include a process chamber with a processing volume and a substrate support including a pedestal, a remote plasma source fluidly coupled to the process chamber and configured to produce radicals or ionized gas mixture with radicals that flow into the processing volume to remove residue or oxides from a surface of the substrate, a first gas delivery system with a first ampoule configured to provide at least one first chemical into the processing volume to produce a SAM on the surface of the substrate, a heating system located in the pedestal and configured to heat a substrate by flowing gas on a backside of the substrate, and a vacuum system fluidly coupled to the process chamber and configured to control heating of the substrate.
    Type: Grant
    Filed: June 1, 2020
    Date of Patent: March 26, 2024
    Assignee: APPLIED MATERIALS, INC.
    Inventors: Xiangjin Xie, Carmen Leal Cervantes, Feng Chen, Lu Chen, Wenjing Xu, Aravind Kamath, Cheng-Hsiung Matthew Tsai, Tae Hong Ha, Alexander Jansen, Xianmin Tang
  • Publication number: 20240041508
    Abstract: The present disclosure discloses a fracture repair device realizing transition from mechanical fixation (association of osteosynthesis, AO) to biological fixation (biological osteosynthesis, BO), including: a bone repair instrument, wherein auxiliary components are arranged at positions, close to a repaired bone surface, of the bone repair instrument, and each auxiliary component is made of a degradable metal material or a composite material thereof or a degradable polymeric material. The device of the present disclosure only has the advantages of AO rigid mechanical fixation, but also can effectively improve the defects of bone disconnection, fixed segment osteoporosis, re-fracture after defixation, etc., frequently occurring under AO rigid mechanical fixation, realizing transition from mechanical fixation (association of osteosynthesis, AO) to biological fixation (biological osteosynthesis, BO) during bone fixation or repair.
    Type: Application
    Filed: June 17, 2021
    Publication date: February 8, 2024
    Inventors: Jiang PENG, Zhenguo WANG, Haoye MENG, Qiang LU, Chao PAN, Shujun YUE, Aiyuan WANG, Hao ZHOU, Wenjing XU, Wei LIU, Xingyan ZHANG, Chunbao SHI, Xi CHENG
  • Patent number: 11835927
    Abstract: Process recipe data associated a process to be performed for a substrate at a process chamber is provided as input to a trained machine learning model. A set of process recipe settings for the process that minimizes scratching on one or more surfaces of the substrate is determined based on one or more outputs of the machine learning model. The process is performed for the substrate at the process chamber in accordance with the determined set of process recipe settings.
    Type: Grant
    Filed: December 19, 2022
    Date of Patent: December 5, 2023
    Assignee: APPLIED MATERIALS, INC.
    Inventors: Kartik B Shah, Satish Radhakrishnan, Karthik Ramanathan, Karthikeyan Balaraman, Adolph Miller Allen, Xinyuan Chong, Mitrabhanu Sahu, Wenjing Xu, Michael Sterling Jackson, Weize Hu, Feng Chen
  • Patent number: 11784127
    Abstract: Electronic devices and methods of forming electronic devices using a ruthenium or doped ruthenium liner and cap layer are described. A liner with a ruthenium layer and a cobalt layer is formed on a barrier layer. A conductive fill forms a second conductive line in contact with the first conductive line.
    Type: Grant
    Filed: July 6, 2022
    Date of Patent: October 10, 2023
    Assignee: Applied Materials, Inc.
    Inventors: Wenjing Xu, Feng Chen, Tae Hong Ha, Xianmin Tang, Lu Chen, Zhiyuan Wu
  • Patent number: 11764157
    Abstract: Electronic devices and methods of forming electronic devices using a ruthenium or doped ruthenium liner and cap layer are described. A liner with a ruthenium layer and a cobalt layer is formed on a barrier layer. A conductive fill forms a second conductive line in contact with the first conductive line.
    Type: Grant
    Filed: July 22, 2021
    Date of Patent: September 19, 2023
    Assignee: Applied Materials, Inc.
    Inventors: Wenjing Xu, Feng Chen, Tae Hong Ha, Xianmin Tang, Lu Chen, Zhiyuan Wu
  • Publication number: 20230121513
    Abstract: Process recipe data associated a process to be performed for a substrate at a process chamber is provided as input to a trained machine learning model. A set of process recipe settings for the process that minimizes scratching on one or more surfaces of the substrate is determined based on one or more outputs of the machine learning model. The process is performed for the substrate at the process chamber in accordance with the determined set of process recipe settings.
    Type: Application
    Filed: December 19, 2022
    Publication date: April 20, 2023
    Inventors: Kartik B. Shah, Satish Radhakrishnan, Karthik Ramanathan, Karthikeyan Balaraman, Adolph Miller Allen, Xinyuan Chong, Mitrabhanu Sahu, Wenjing Xu, Michael Sterling Jackson, Weize Hu, Feng Chen
  • Patent number: 11611353
    Abstract: A quantizer for a sigma-delta modulator, a sigma-delta modulator, and a method of shaping noise are provided. The quantizer includes: an integrator configured to generate, in a Kth sampling period, a quantization error signal for a Kth period according to an internal signal, a quantization error signal for a (K?1)th period, a filtered quantization error signal for the (K?1)th period and a filtered quantization error signal for a (K?2)th period; an integrating capacitor configured to store the quantization error signal for the Kth period, to weight the internal signal in a (K+1)th sampling period; a passive low-pass filter configured to acquire the quantization error signal for the Kth period in a Kth discharge period, and feed back the filtered quantization error signal to the integrator in a (K+1)th sampling period and a (K+2)th sampling period; and a comparator configured to quantize the quantization error signal for the Kth period.
    Type: Grant
    Filed: June 4, 2021
    Date of Patent: March 21, 2023
    Assignee: INSTITUTE OF MICROELECTRONICS, CHINESE ACADEMY OF SCIENCES
    Inventors: Kunyu Wang, Li Zhou, Jie Chen, Minghui Chen, Ming Chen, Wenjing Xu, Chengbin Zhang
  • Patent number: 11586160
    Abstract: Methods and systems for reducing substrate particle scratching using machine learning are provided. A machine learning model is trained to predict process recipe settings for a substrate temperature control process to be performed for a current substrate at a manufacturing system. First training data and second training data are generated for the machine learning model. The first training data includes historical data associated with prior process recipe settings for a prior substrate temperature control process performed for a prior substrate at a prior process chamber. The second training data is associated with a historical scratch profile of one or more surfaces of the prior substrate after performance of the prior substrate temperature control process according to the prior process recipe settings.
    Type: Grant
    Filed: June 28, 2021
    Date of Patent: February 21, 2023
    Assignee: Applied Materials, Inc.
    Inventors: Kartik B Shah, Satish Radhakrishnan, Karthik Ramanathan, Karthikeyan Balaraman, Adolph Miller Allen, Xinyuan Chong, Mitrabhanu Sahu, Wenjing Xu, Michael Sterling Jackson, Weize Hu, Feng Chen
  • Patent number: 11587873
    Abstract: Described are microelectronic devices comprising a dielectric layer formed on a substrate, a feature comprising a gap defined in the dielectric layer, a barrier layer on the dielectric layer, a two metal liner film on the barrier layer and a gap fill metal on the two metal liner. Embodiments provide a method of forming a microelectronic device comprising the two metal liner film on the barrier layer.
    Type: Grant
    Filed: June 23, 2020
    Date of Patent: February 21, 2023
    Assignee: Applied Materials, Inc.
    Inventors: Gang Shen, Feng Chen, Yizhak Sabba, Tae Hong Ha, Xianmin Tang, Zhiyuan Wu, Wenjing Xu
  • Publication number: 20220413452
    Abstract: Methods and systems for reducing substrate particle scratching using machine learning are provided. A machine learning model is trained to predict process recipe settings for a substrate temperature control process to be performed for a current substrate at a manufacturing system. First training data and second training data are generated for the machine learning model. The first training data includes historical data associated with prior process recipe settings for a prior substrate temperature control process performed for a prior substrate at a prior process chamber. The second training data is associated with a historical scratch profile of one or more surfaces of the prior substrate after performance of the prior substrate temperature control process according to the prior process recipe settings.
    Type: Application
    Filed: June 28, 2021
    Publication date: December 29, 2022
    Inventors: Kartik B. Shah, Satish Radhakrishnan, Karthik Ramanathan, Karthikeyan Balaraman, Adolph Miller Allen, Xinyuan Chong, Mitrabhanu Sahu, Wenjing Xu, Michael Sterling Jackson, Weize Hu, Feng Chen
  • Publication number: 20220416808
    Abstract: A quantizer for a sigma-delta modulator, a sigma-delta modulator, and a method of shaping noise are provided. The quantizer includes: an integrator configured to generate, in a Kth sampling period, a quantization error signal for a Kth period according to an internal signal, a quantization error signal for a (K?1)th period, a filtered quantization error signal for the (K?1)th period and a filtered quantization error signal for a (K?2)th period; an integrating capacitor configured to store the quantization error signal for the Kth period, to weight the internal signal in a (K+1)th sampling period; a passive low-pass filter configured to acquire the quantization error signal for the Kth period in a Kth discharge period, and feed back the filtered quantization error signal to the integrator in a (K+1)th sampling period and a (K+2)th sampling period; and a comparator configured to quantize the quantization error signal for the Kth period.
    Type: Application
    Filed: June 4, 2021
    Publication date: December 29, 2022
    Inventors: Kunyu WANG, Li ZHOU, Jie CHEN, Minghui CHEN, Ming CHEN, Wenjing XU, Chengbin ZHANG
  • Publication number: 20220344275
    Abstract: Electronic devices and methods of forming electronic devices using a ruthenium or doped ruthenium liner and cap layer are described. A liner with a ruthenium layer and a cobalt layer is formed on a barrier layer. A conductive fill forms a second conductive line in contact with the first conductive line.
    Type: Application
    Filed: July 6, 2022
    Publication date: October 27, 2022
    Applicant: Applied Materials, Inc.
    Inventors: Wenjing Xu, Feng Chen, Tae Hong Ha, Xianmin Tang, Lu Chen, Zhiyuan Wu
  • Publication number: 20220152534
    Abstract: The present invention provides an oil slurry filter, a filter unit including the oil slurry filter, a multiple-filter system including the oil slurry filter, and a multiple-stage filter system including the oil slurry filter. Due to the use of the filter component of flexible texture in the oil slurry filter of the present invention, the problems that the filter material is easily blocked by high-viscosity colloidal impurities, the regeneration efficiency of the filter is poor and the filtration efficiency is low are solved, and it is possible to make the backwash treatment of the filter residue more convenient and improve the regeneration efficiency of the filter. The present invention also provides a filtering process using the oil slurry filter to ensure long-term stable operation of the oil slurry filtering process.
    Type: Application
    Filed: February 20, 2020
    Publication date: May 19, 2022
    Applicants: CHINA PETROLEUM & CHEMICAL CORPORATION, RESEARCH INSTITUTE OF PETROLEUM PROCESSING, SINOPEC, SUN-CENTRAL (SHANGHAI) MARKETING AND SERVICE CO., LTD
    Inventors: Zhihai HU, Yong HAN, Chuanfeng NIU, Lingping WANG, Fa LIU, Tan CHEN, Zhicai SHAO, Jinshan XIAO, Zhonghuo DENG, Shasha LI, Lishun DAI, Wei YE, Qiang FANG, Wenjing XU
  • Publication number: 20220064784
    Abstract: Methods for selective deposition are described herein. Further, methods for improving selectivity comprising an ammonia plasma pre-clean process are also described. In some embodiments, a silyl amine is used to selectively form a surfactant layer on a dielectric surface. A ruthenium film may then be selectively deposited on a conductive surface. In some embodiments, the ammonia plasma removes oxide contaminations from conductive surfaces without adversely affecting the dielectric surface.
    Type: Application
    Filed: September 3, 2020
    Publication date: March 3, 2022
    Applicant: Applied Materials, Inc.
    Inventors: Wenjing Xu, Gang Shen, Yufei Hu, Feng Chen, Tae Hong Ha
  • Publication number: 20220037204
    Abstract: Methods and apparatus that forms a stabilization layer on copper-based material to inhibit formation of copper voids in the copper-based material. In some embodiments, a method of forming the stabilization layer on the copper-based material includes depositing a first stabilization layer on the copper-based material where the first stabilization layer forms a continuous film on the copper-based material and is formed of a first material that does not alloy with copper, depositing a second stabilization layer on the first stabilization layer where the second stabilization layer is formed from a second material that alloys with copper and where the first stabilization layer is configured to inhibit formation of voids in the copper-based material during subsequent high thermal budget processing.
    Type: Application
    Filed: August 3, 2020
    Publication date: February 3, 2022
    Inventors: Wenjing XU, Gang SHEN, Feng CHEN, Tae Hong HA
  • Publication number: 20220028795
    Abstract: Electronic devices and methods of forming electronic devices using a ruthenium or doped ruthenium liner and cap layer are described. A liner with a ruthenium layer and a cobalt layer is formed on a barrier layer. A conductive fill forms a second conductive line in contact with the first conductive line.
    Type: Application
    Filed: July 22, 2021
    Publication date: January 27, 2022
    Applicant: Applied Materials, Inc.
    Inventors: Wenjing Xu, Feng Chen, Tae Hong Ha, Xianmin Tang, Lu Chen, Zhiyuan Wu
  • Publication number: 20210371972
    Abstract: Methods and apparatus for processing a substrate include cleaning and self-assembly monolayer (SAM) formation for subsequent reverse selective atomic layer deposition. An apparatus may include a process chamber with a processing volume and a substrate support including a pedestal, a remote plasma source fluidly coupled to the process chamber and configured to produce radicals or ionized gas mixture with radicals that flow into the processing volume to remove residue or oxides from a surface of the substrate, a first gas delivery system with a first ampoule configured to provide at least one first chemical into the processing volume to produce a SAM on the surface of the substrate, a heating system located in the pedestal and configured to heat a substrate by flowing gas on a backside of the substrate, and a vacuum system fluidly coupled to the process chamber and configured to control heating of the substrate.
    Type: Application
    Filed: June 1, 2020
    Publication date: December 2, 2021
    Inventors: Xiangjin XIE, Carmen LEAL CERVANTES, Feng CHEN, Lu CHEN, Wenjing XU, Aravind KAMATH, Cheng-Hsiung Matthew TSAI, Tae Hong HA, Alexander JANSEN, Xianmin TANG
  • Patent number: D1001261
    Type: Grant
    Filed: July 13, 2023
    Date of Patent: October 10, 2023
    Inventor: Wenjing Xu