Abstract: A power tool includes: a motor including a rotor and multiple phases of stator windings; and a control circuit configured to control the working state of the motor. The control circuit includes: a driver circuit including multiple switching elements; a controller electrically connected to at least the driver circuit and capable of outputting a control signal to change the conducting states of the multiple switching elements in the driver circuit; and a parameter detection module configured to detect a working parameter of the motor. In response to a braking signal, the controller sets an input parameter of the control circuit according to a preset parameter and the working parameter to control output power of the motor and/or output torque of the motor, thereby controlling the motor to brake.

Abstract: Methods and apparatus for processing a substrate include cleaning and self-assembly monolayer (SAM) formation for subsequent reverse selective atomic layer deposition. An apparatus may include a process chamber with a processing volume and a substrate support including a pedestal, a remote plasma source fluidly coupled to the process chamber and configured to produce radicals or ionized gas mixture with radicals that flow into the processing volume to remove residue or oxides from a surface of the substrate, a first gas delivery system with a first ampoule configured to provide at least one first chemical into the processing volume to produce a SAM on the surface of the substrate, a heating system located in the pedestal and configured to heat a substrate by flowing gas on a backside of the substrate, and a vacuum system fluidly coupled to the process chamber and configured to control heating of the substrate.

Abstract: The present disclosure discloses a fracture repair device realizing transition from mechanical fixation (association of osteosynthesis, AO) to biological fixation (biological osteosynthesis, BO), including: a bone repair instrument, wherein auxiliary components are arranged at positions, close to a repaired bone surface, of the bone repair instrument, and each auxiliary component is made of a degradable metal material or a composite material thereof or a degradable polymeric material. The device of the present disclosure only has the advantages of AO rigid mechanical fixation, but also can effectively improve the defects of bone disconnection, fixed segment osteoporosis, re-fracture after defixation, etc., frequently occurring under AO rigid mechanical fixation, realizing transition from mechanical fixation (association of osteosynthesis, AO) to biological fixation (biological osteosynthesis, BO) during bone fixation or repair.

Abstract: Process recipe data associated a process to be performed for a substrate at a process chamber is provided as input to a trained machine learning model. A set of process recipe settings for the process that minimizes scratching on one or more surfaces of the substrate is determined based on one or more outputs of the machine learning model. The process is performed for the substrate at the process chamber in accordance with the determined set of process recipe settings.

Abstract: Electronic devices and methods of forming electronic devices using a ruthenium or doped ruthenium liner and cap layer are described. A liner with a ruthenium layer and a cobalt layer is formed on a barrier layer. A conductive fill forms a second conductive line in contact with the first conductive line.

Abstract: Electronic devices and methods of forming electronic devices using a ruthenium or doped ruthenium liner and cap layer are described. A liner with a ruthenium layer and a cobalt layer is formed on a barrier layer. A conductive fill forms a second conductive line in contact with the first conductive line.

Abstract: Process recipe data associated a process to be performed for a substrate at a process chamber is provided as input to a trained machine learning model. A set of process recipe settings for the process that minimizes scratching on one or more surfaces of the substrate is determined based on one or more outputs of the machine learning model. The process is performed for the substrate at the process chamber in accordance with the determined set of process recipe settings.

Abstract: A quantizer for a sigma-delta modulator, a sigma-delta modulator, and a method of shaping noise are provided. The quantizer includes: an integrator configured to generate, in a Kth sampling period, a quantization error signal for a Kth period according to an internal signal, a quantization error signal for a (K?1)th period, a filtered quantization error signal for the (K?1)th period and a filtered quantization error signal for a (K?2)th period; an integrating capacitor configured to store the quantization error signal for the Kth period, to weight the internal signal in a (K+1)th sampling period; a passive low-pass filter configured to acquire the quantization error signal for the Kth period in a Kth discharge period, and feed back the filtered quantization error signal to the integrator in a (K+1)th sampling period and a (K+2)th sampling period; and a comparator configured to quantize the quantization error signal for the Kth period.

Abstract: Methods and systems for reducing substrate particle scratching using machine learning are provided. A machine learning model is trained to predict process recipe settings for a substrate temperature control process to be performed for a current substrate at a manufacturing system. First training data and second training data are generated for the machine learning model. The first training data includes historical data associated with prior process recipe settings for a prior substrate temperature control process performed for a prior substrate at a prior process chamber. The second training data is associated with a historical scratch profile of one or more surfaces of the prior substrate after performance of the prior substrate temperature control process according to the prior process recipe settings.

Abstract: Described are microelectronic devices comprising a dielectric layer formed on a substrate, a feature comprising a gap defined in the dielectric layer, a barrier layer on the dielectric layer, a two metal liner film on the barrier layer and a gap fill metal on the two metal liner. Embodiments provide a method of forming a microelectronic device comprising the two metal liner film on the barrier layer.

Abstract: Methods and systems for reducing substrate particle scratching using machine learning are provided. A machine learning model is trained to predict process recipe settings for a substrate temperature control process to be performed for a current substrate at a manufacturing system. First training data and second training data are generated for the machine learning model. The first training data includes historical data associated with prior process recipe settings for a prior substrate temperature control process performed for a prior substrate at a prior process chamber. The second training data is associated with a historical scratch profile of one or more surfaces of the prior substrate after performance of the prior substrate temperature control process according to the prior process recipe settings.

Abstract: A quantizer for a sigma-delta modulator, a sigma-delta modulator, and a method of shaping noise are provided. The quantizer includes: an integrator configured to generate, in a Kth sampling period, a quantization error signal for a Kth period according to an internal signal, a quantization error signal for a (K?1)th period, a filtered quantization error signal for the (K?1)th period and a filtered quantization error signal for a (K?2)th period; an integrating capacitor configured to store the quantization error signal for the Kth period, to weight the internal signal in a (K+1)th sampling period; a passive low-pass filter configured to acquire the quantization error signal for the Kth period in a Kth discharge period, and feed back the filtered quantization error signal to the integrator in a (K+1)th sampling period and a (K+2)th sampling period; and a comparator configured to quantize the quantization error signal for the Kth period.

Abstract: Electronic devices and methods of forming electronic devices using a ruthenium or doped ruthenium liner and cap layer are described. A liner with a ruthenium layer and a cobalt layer is formed on a barrier layer. A conductive fill forms a second conductive line in contact with the first conductive line.

Abstract: The present invention provides an oil slurry filter, a filter unit including the oil slurry filter, a multiple-filter system including the oil slurry filter, and a multiple-stage filter system including the oil slurry filter. Due to the use of the filter component of flexible texture in the oil slurry filter of the present invention, the problems that the filter material is easily blocked by high-viscosity colloidal impurities, the regeneration efficiency of the filter is poor and the filtration efficiency is low are solved, and it is possible to make the backwash treatment of the filter residue more convenient and improve the regeneration efficiency of the filter. The present invention also provides a filtering process using the oil slurry filter to ensure long-term stable operation of the oil slurry filtering process.

Abstract: Methods for selective deposition are described herein. Further, methods for improving selectivity comprising an ammonia plasma pre-clean process are also described. In some embodiments, a silyl amine is used to selectively form a surfactant layer on a dielectric surface. A ruthenium film may then be selectively deposited on a conductive surface. In some embodiments, the ammonia plasma removes oxide contaminations from conductive surfaces without adversely affecting the dielectric surface.

Abstract: Methods and apparatus that forms a stabilization layer on copper-based material to inhibit formation of copper voids in the copper-based material. In some embodiments, a method of forming the stabilization layer on the copper-based material includes depositing a first stabilization layer on the copper-based material where the first stabilization layer forms a continuous film on the copper-based material and is formed of a first material that does not alloy with copper, depositing a second stabilization layer on the first stabilization layer where the second stabilization layer is formed from a second material that alloys with copper and where the first stabilization layer is configured to inhibit formation of voids in the copper-based material during subsequent high thermal budget processing.

Abstract: Electronic devices and methods of forming electronic devices using a ruthenium or doped ruthenium liner and cap layer are described. A liner with a ruthenium layer and a cobalt layer is formed on a barrier layer. A conductive fill forms a second conductive line in contact with the first conductive line.

Abstract: Methods and apparatus for processing a substrate include cleaning and self-assembly monolayer (SAM) formation for subsequent reverse selective atomic layer deposition. An apparatus may include a process chamber with a processing volume and a substrate support including a pedestal, a remote plasma source fluidly coupled to the process chamber and configured to produce radicals or ionized gas mixture with radicals that flow into the processing volume to remove residue or oxides from a surface of the substrate, a first gas delivery system with a first ampoule configured to provide at least one first chemical into the processing volume to produce a SAM on the surface of the substrate, a heating system located in the pedestal and configured to heat a substrate by flowing gas on a backside of the substrate, and a vacuum system fluidly coupled to the process chamber and configured to control heating of the substrate.

Abstract: Described are microelectronic device comprising a dielectric layer formed on a substrate, a feature 206 comprising a gap defined in the dielectric layer, a barrier layer on the dielectric layer, a two metal liner film on the barrier layer and a gap fill metal on the two metal liner. Embodiments provide a method of forming an microelectronic device comprising the two metal liner film on the barrier layer.