Patents by Inventor Wenjing Xu
Wenjing Xu has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20250112090Abstract: Methods of forming devices comprise forming a dielectric layer on a substrate, the dielectric layer comprising at least one feature defining a gap including sidewalls and a bottom. A self-assembled monolayer (SAM) is formed on the bottom of the gap, and a barrier layer is formed on the SAM before selectively depositing a metal liner on the barrier layer. The SAM is removed after selectively depositing the metal liner on the barrier layer.Type: ApplicationFiled: December 12, 2024Publication date: April 3, 2025Applicant: Applied Materials, Inc.Inventors: Ge Qu, Zhiyuan Wu, Feng Chen, Carmen Leal Cervantes, Yong Jin Kim, Kevin Kashefi, Xianmin Tang, Wenjing Xu, Lu Chen, Tae Hong Ha
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Patent number: 12226725Abstract: The present invention provides an oil slurry filter, a filter unit including the oil slurry filter, a multiple-filter system including the oil slurry filter, and a multiple-stage filter system including the oil slurry filter. Due to the use of the filter component of flexible texture in the oil slurry filter of the present invention, the problems that the filter material is easily blocked by high-viscosity colloidal impurities, the regeneration efficiency of the filter is poor and the filtration efficiency is low are solved, and it is possible to make the backwash treatment of the filter residue more convenient and improve the regeneration efficiency of the filter. The present invention also provides a filtering process using the oil slurry filter to ensure long-term stable operation of the oil slurry filtering process.Type: GrantFiled: February 20, 2020Date of Patent: February 18, 2025Assignees: CHINA PETROLEUM & CHEMICAL CORPORATION, RESEARCH INSTITUTE OF PETROLEUM PROCESSING, SINOPEC, SUN-CENTRAL (SHANGHAI) MARKETING AND SERVICE CO., LTDInventors: Zhihai Hu, Yong Han, Chuanfeng Niu, Lingping Wang, Fa Liu, Tan Chen, Zhicai Shao, Jinshan Xiao, Zhonghuo Deng, Shasha Li, Lishun Dai, Wei Ye, Qiang Fang, Wenjing Xu
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Patent number: 12211743Abstract: Methods of forming devices comprise forming a dielectric layer on a substrate, the dielectric layer comprising at least one feature defining a gap including sidewalls and a bottom. A self-assembled monolayer (SAM) is formed on the bottom of the gap, and a barrier layer is formed on the SAM before selectively depositing a metal liner on the barrier layer. The SAM is removed after selectively depositing the metal liner on the barrier layer.Type: GrantFiled: September 3, 2021Date of Patent: January 28, 2025Assignee: Applied Materials, Inc.Inventors: Ge Qu, Zhiyuan Wu, Feng Chen, Carmen Leal Cervantes, Yong Jin Kim, Kevin Kashefi, Xianmin Tang, Wenjing Xu, Lu Chen, Tae Hong Ha
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Patent number: 12157943Abstract: Methods for selective deposition are described herein. Further, methods for improving selectivity comprising an ammonia plasma pre-clean process are also described. In some embodiments, a silyl amine is used to selectively form a surfactant layer on a dielectric surface. A ruthenium film may then be selectively deposited on a conductive surface. In some embodiments, the ammonia plasma removes oxide contaminations from conductive surfaces without adversely affecting the dielectric surface.Type: GrantFiled: September 3, 2020Date of Patent: December 3, 2024Assignee: Applied Materials, Inc.Inventors: Wenjing Xu, Gang Shen, Yufei Hu, Feng Chen, Tae Hong Ha
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Publication number: 20240373810Abstract: Provided is a soybean oligosaccharide-related kompetitive allele-specific PCR (KASP) marker and use thereof, belonging to the technical field of molecular breeding. The KASP marker includes one or two of S18_51868868 T/G and S10_38081012 T/C, where the S18_51868868 T/G is a base T or a base G at a 51868868bp position on chromosome 18 of a soybean genome; and the S10_38081012 T/C is a base T or a base C at a 38081012bp position of chromosome 10 of the soybean genome. In the present disclosure, the KASP marker can accurately genotype the traits of raffinose and stachyose contents. Through genotyping, it is found that a soybean germplasm with a genotype GG has a higher raffinose content than that of a soybean germplasm with a genotype TT, and a soybean germplasm with a genotype TT has a higher stachyose content than that of a soybean germplasm with a genotype CC.Type: ApplicationFiled: November 15, 2022Publication date: November 14, 2024Inventors: Huatao CHEN, Yanzhe LI, Wei ZHANG, Hongmei ZHANG, Wenjing XU, Xiaoyan CUI, Xiaoqing LIU, Qiong WANG, Xin CHEN
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Publication number: 20240183028Abstract: Methods and apparatus for processing a substrate include cleaning and self-assembly monolayer (SAM) formation for subsequent reverse selective atomic layer deposition. An apparatus may include a process chamber with a processing volume and a substrate support including a pedestal, a remote plasma source fluidly coupled to the process chamber and configured to produce radicals or ionized gas mixture with radicals that flow into the processing volume to remove residue or oxides from a surface of the substrate, a first gas delivery system with a first ampoule configured to provide at least one first chemical into the processing volume to produce a SAM on the surface of the substrate, a heating system located in the pedestal and configured to heat a substrate by flowing gas on a backside of the substrate, and a vacuum system fluidly coupled to the process chamber and configured to control heating of the substrate.Type: ApplicationFiled: February 15, 2024Publication date: June 6, 2024Inventors: Xiangjin XIE, Carmen LEAL CERVANTES, Feng CHEN, Lu CHEN, Wenjing XU, Aravind KAMATH, Cheng-Hsiung Matthew TSAI, Tae Hong HA, Alexander JANSEN, Xianmin TANG
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Patent number: 11939666Abstract: Methods and apparatus for processing a substrate include cleaning and self-assembly monolayer (SAM) formation for subsequent reverse selective atomic layer deposition. An apparatus may include a process chamber with a processing volume and a substrate support including a pedestal, a remote plasma source fluidly coupled to the process chamber and configured to produce radicals or ionized gas mixture with radicals that flow into the processing volume to remove residue or oxides from a surface of the substrate, a first gas delivery system with a first ampoule configured to provide at least one first chemical into the processing volume to produce a SAM on the surface of the substrate, a heating system located in the pedestal and configured to heat a substrate by flowing gas on a backside of the substrate, and a vacuum system fluidly coupled to the process chamber and configured to control heating of the substrate.Type: GrantFiled: June 1, 2020Date of Patent: March 26, 2024Assignee: APPLIED MATERIALS, INC.Inventors: Xiangjin Xie, Carmen Leal Cervantes, Feng Chen, Lu Chen, Wenjing Xu, Aravind Kamath, Cheng-Hsiung Matthew Tsai, Tae Hong Ha, Alexander Jansen, Xianmin Tang
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Publication number: 20240041508Abstract: The present disclosure discloses a fracture repair device realizing transition from mechanical fixation (association of osteosynthesis, AO) to biological fixation (biological osteosynthesis, BO), including: a bone repair instrument, wherein auxiliary components are arranged at positions, close to a repaired bone surface, of the bone repair instrument, and each auxiliary component is made of a degradable metal material or a composite material thereof or a degradable polymeric material. The device of the present disclosure only has the advantages of AO rigid mechanical fixation, but also can effectively improve the defects of bone disconnection, fixed segment osteoporosis, re-fracture after defixation, etc., frequently occurring under AO rigid mechanical fixation, realizing transition from mechanical fixation (association of osteosynthesis, AO) to biological fixation (biological osteosynthesis, BO) during bone fixation or repair.Type: ApplicationFiled: June 17, 2021Publication date: February 8, 2024Inventors: Jiang PENG, Zhenguo WANG, Haoye MENG, Qiang LU, Chao PAN, Shujun YUE, Aiyuan WANG, Hao ZHOU, Wenjing XU, Wei LIU, Xingyan ZHANG, Chunbao SHI, Xi CHENG
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Patent number: 11835927Abstract: Process recipe data associated a process to be performed for a substrate at a process chamber is provided as input to a trained machine learning model. A set of process recipe settings for the process that minimizes scratching on one or more surfaces of the substrate is determined based on one or more outputs of the machine learning model. The process is performed for the substrate at the process chamber in accordance with the determined set of process recipe settings.Type: GrantFiled: December 19, 2022Date of Patent: December 5, 2023Assignee: APPLIED MATERIALS, INC.Inventors: Kartik B Shah, Satish Radhakrishnan, Karthik Ramanathan, Karthikeyan Balaraman, Adolph Miller Allen, Xinyuan Chong, Mitrabhanu Sahu, Wenjing Xu, Michael Sterling Jackson, Weize Hu, Feng Chen
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Patent number: 11784127Abstract: Electronic devices and methods of forming electronic devices using a ruthenium or doped ruthenium liner and cap layer are described. A liner with a ruthenium layer and a cobalt layer is formed on a barrier layer. A conductive fill forms a second conductive line in contact with the first conductive line.Type: GrantFiled: July 6, 2022Date of Patent: October 10, 2023Assignee: Applied Materials, Inc.Inventors: Wenjing Xu, Feng Chen, Tae Hong Ha, Xianmin Tang, Lu Chen, Zhiyuan Wu
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Patent number: 11764157Abstract: Electronic devices and methods of forming electronic devices using a ruthenium or doped ruthenium liner and cap layer are described. A liner with a ruthenium layer and a cobalt layer is formed on a barrier layer. A conductive fill forms a second conductive line in contact with the first conductive line.Type: GrantFiled: July 22, 2021Date of Patent: September 19, 2023Assignee: Applied Materials, Inc.Inventors: Wenjing Xu, Feng Chen, Tae Hong Ha, Xianmin Tang, Lu Chen, Zhiyuan Wu
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Publication number: 20230121513Abstract: Process recipe data associated a process to be performed for a substrate at a process chamber is provided as input to a trained machine learning model. A set of process recipe settings for the process that minimizes scratching on one or more surfaces of the substrate is determined based on one or more outputs of the machine learning model. The process is performed for the substrate at the process chamber in accordance with the determined set of process recipe settings.Type: ApplicationFiled: December 19, 2022Publication date: April 20, 2023Inventors: Kartik B. Shah, Satish Radhakrishnan, Karthik Ramanathan, Karthikeyan Balaraman, Adolph Miller Allen, Xinyuan Chong, Mitrabhanu Sahu, Wenjing Xu, Michael Sterling Jackson, Weize Hu, Feng Chen
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Patent number: 11611353Abstract: A quantizer for a sigma-delta modulator, a sigma-delta modulator, and a method of shaping noise are provided. The quantizer includes: an integrator configured to generate, in a Kth sampling period, a quantization error signal for a Kth period according to an internal signal, a quantization error signal for a (K?1)th period, a filtered quantization error signal for the (K?1)th period and a filtered quantization error signal for a (K?2)th period; an integrating capacitor configured to store the quantization error signal for the Kth period, to weight the internal signal in a (K+1)th sampling period; a passive low-pass filter configured to acquire the quantization error signal for the Kth period in a Kth discharge period, and feed back the filtered quantization error signal to the integrator in a (K+1)th sampling period and a (K+2)th sampling period; and a comparator configured to quantize the quantization error signal for the Kth period.Type: GrantFiled: June 4, 2021Date of Patent: March 21, 2023Assignee: INSTITUTE OF MICROELECTRONICS, CHINESE ACADEMY OF SCIENCESInventors: Kunyu Wang, Li Zhou, Jie Chen, Minghui Chen, Ming Chen, Wenjing Xu, Chengbin Zhang
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Patent number: 11587873Abstract: Described are microelectronic devices comprising a dielectric layer formed on a substrate, a feature comprising a gap defined in the dielectric layer, a barrier layer on the dielectric layer, a two metal liner film on the barrier layer and a gap fill metal on the two metal liner. Embodiments provide a method of forming a microelectronic device comprising the two metal liner film on the barrier layer.Type: GrantFiled: June 23, 2020Date of Patent: February 21, 2023Assignee: Applied Materials, Inc.Inventors: Gang Shen, Feng Chen, Yizhak Sabba, Tae Hong Ha, Xianmin Tang, Zhiyuan Wu, Wenjing Xu
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Patent number: 11586160Abstract: Methods and systems for reducing substrate particle scratching using machine learning are provided. A machine learning model is trained to predict process recipe settings for a substrate temperature control process to be performed for a current substrate at a manufacturing system. First training data and second training data are generated for the machine learning model. The first training data includes historical data associated with prior process recipe settings for a prior substrate temperature control process performed for a prior substrate at a prior process chamber. The second training data is associated with a historical scratch profile of one or more surfaces of the prior substrate after performance of the prior substrate temperature control process according to the prior process recipe settings.Type: GrantFiled: June 28, 2021Date of Patent: February 21, 2023Assignee: Applied Materials, Inc.Inventors: Kartik B Shah, Satish Radhakrishnan, Karthik Ramanathan, Karthikeyan Balaraman, Adolph Miller Allen, Xinyuan Chong, Mitrabhanu Sahu, Wenjing Xu, Michael Sterling Jackson, Weize Hu, Feng Chen
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Publication number: 20220416808Abstract: A quantizer for a sigma-delta modulator, a sigma-delta modulator, and a method of shaping noise are provided. The quantizer includes: an integrator configured to generate, in a Kth sampling period, a quantization error signal for a Kth period according to an internal signal, a quantization error signal for a (K?1)th period, a filtered quantization error signal for the (K?1)th period and a filtered quantization error signal for a (K?2)th period; an integrating capacitor configured to store the quantization error signal for the Kth period, to weight the internal signal in a (K+1)th sampling period; a passive low-pass filter configured to acquire the quantization error signal for the Kth period in a Kth discharge period, and feed back the filtered quantization error signal to the integrator in a (K+1)th sampling period and a (K+2)th sampling period; and a comparator configured to quantize the quantization error signal for the Kth period.Type: ApplicationFiled: June 4, 2021Publication date: December 29, 2022Inventors: Kunyu WANG, Li ZHOU, Jie CHEN, Minghui CHEN, Ming CHEN, Wenjing XU, Chengbin ZHANG
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Publication number: 20220413452Abstract: Methods and systems for reducing substrate particle scratching using machine learning are provided. A machine learning model is trained to predict process recipe settings for a substrate temperature control process to be performed for a current substrate at a manufacturing system. First training data and second training data are generated for the machine learning model. The first training data includes historical data associated with prior process recipe settings for a prior substrate temperature control process performed for a prior substrate at a prior process chamber. The second training data is associated with a historical scratch profile of one or more surfaces of the prior substrate after performance of the prior substrate temperature control process according to the prior process recipe settings.Type: ApplicationFiled: June 28, 2021Publication date: December 29, 2022Inventors: Kartik B. Shah, Satish Radhakrishnan, Karthik Ramanathan, Karthikeyan Balaraman, Adolph Miller Allen, Xinyuan Chong, Mitrabhanu Sahu, Wenjing Xu, Michael Sterling Jackson, Weize Hu, Feng Chen
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Publication number: 20220344275Abstract: Electronic devices and methods of forming electronic devices using a ruthenium or doped ruthenium liner and cap layer are described. A liner with a ruthenium layer and a cobalt layer is formed on a barrier layer. A conductive fill forms a second conductive line in contact with the first conductive line.Type: ApplicationFiled: July 6, 2022Publication date: October 27, 2022Applicant: Applied Materials, Inc.Inventors: Wenjing Xu, Feng Chen, Tae Hong Ha, Xianmin Tang, Lu Chen, Zhiyuan Wu
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Publication number: 20220152534Abstract: The present invention provides an oil slurry filter, a filter unit including the oil slurry filter, a multiple-filter system including the oil slurry filter, and a multiple-stage filter system including the oil slurry filter. Due to the use of the filter component of flexible texture in the oil slurry filter of the present invention, the problems that the filter material is easily blocked by high-viscosity colloidal impurities, the regeneration efficiency of the filter is poor and the filtration efficiency is low are solved, and it is possible to make the backwash treatment of the filter residue more convenient and improve the regeneration efficiency of the filter. The present invention also provides a filtering process using the oil slurry filter to ensure long-term stable operation of the oil slurry filtering process.Type: ApplicationFiled: February 20, 2020Publication date: May 19, 2022Applicants: CHINA PETROLEUM & CHEMICAL CORPORATION, RESEARCH INSTITUTE OF PETROLEUM PROCESSING, SINOPEC, SUN-CENTRAL (SHANGHAI) MARKETING AND SERVICE CO., LTDInventors: Zhihai HU, Yong HAN, Chuanfeng NIU, Lingping WANG, Fa LIU, Tan CHEN, Zhicai SHAO, Jinshan XIAO, Zhonghuo DENG, Shasha LI, Lishun DAI, Wei YE, Qiang FANG, Wenjing XU
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Patent number: D1001261Type: GrantFiled: July 13, 2023Date of Patent: October 10, 2023Inventor: Wenjing Xu