Patents by Inventor Wenjing Xu

Wenjing Xu has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Binary Metal Liner Layers
    Publication number: 20210351136
    Abstract: Described are microelectronic device comprising a dielectric layer formed on a substrate, a feature 206 comprising a gap defined in the dielectric layer, a barrier layer on the dielectric layer, a two metal liner film on the barrier layer and a gap fill metal on the two metal liner. Embodiments provide a method of forming an microelectronic device comprising the two metal liner film on the barrier layer.
    Type: Application
    Filed: June 23, 2020
    Publication date: November 11, 2021
    Applicant: Applied Materials, Inc.
    Inventors: Gang Shen, Feng Chen, Yizhak Sabba, Tae Hong Ha, Xianmin Tang, Zhiyuan Wu, Wenjing Xu
  • Methods for forming cobalt and ruthenium capping layers for interconnect structures
    Patent number: 11171046
    Abstract: Methods and apparatus for forming an interconnect structure, the method including selectively depositing two or more capping layers atop a top surface of a via within a low-k dielectric layer, wherein the two or more capping layers include a first layer of ruthenium and a second layer of cobalt.
    Type: Grant
    Filed: April 1, 2020
    Date of Patent: November 9, 2021
    Assignee: APPLIED MATERIALS, INC.
    Inventors: Feng Chen, Yufei Hu, Wenjing Xu, Gang Shen, Zhiyuan Wu, Tae Hong Ha
  • SELECTIVE COBALT DEPOSITION ON COPPER SURFACES
    Publication number: 20210062330
    Abstract: A method for capping a copper surface on a substrate. In embodiments, the methods include exposing a substrate including a copper surface and a dielectric surface to a cobalt precursor gas and a process gas including a reducing agent to selectively form a first cobalt capping layer over the copper surface while leaving exposed the dielectric surface during a vapor deposition process, wherein a flow rate ratio of process gas to cobalt precursor gas is at least 300:1.
    Type: Application
    Filed: August 25, 2020
    Publication date: March 4, 2021
    Inventors: Wenjing XU, Yufei HU, Gang SHEN, Feng CHEN
  • METHODS FOR FORMING COBALT AND RUTHENIUM CAPPING LAYERS FOR INTERCONNECT STRUCTURES
    Publication number: 20200321247
    Abstract: Methods and apparatus for forming an interconnect structure, the method including selectively depositing two or more capping layers atop a top surface of a via within a low-k dielectric layer, wherein the two or more capping layers include a first layer of ruthenium and a second layer of cobalt.
    Type: Application
    Filed: April 1, 2020
    Publication date: October 8, 2020
    Inventors: FENG CHEN, YUFEI HU, WENJING XU, GANG SHEN, ZHIYUAN WU, TAE HONG HA
  • Method of treating heart failure
    Patent number: 10525070
    Abstract: Disclosed herein is a method for treating heart failure in a subject in need thereof. The method includes administering a therapeutically effective amount of nicotinamide riboside to the subject. The heart failure may be associated with iron deficiency. The method may also include administering iron to the subject.
    Type: Grant
    Filed: February 10, 2016
    Date of Patent: January 7, 2020
    Assignees: DUKE UNIVERSITY, CORNELL UNIVERSITY
    Inventors: Nancy C. Andrews, Wenjing Xu, Anthony A. Sauve
  • METHOD OF TREATING HEART FAILURE
    Publication number: 20190038647
    Abstract: Disclosed herein is a method for treating heart failure in a subject in need thereof. The method includes administering a therapeutically effective amount of nicotinamide riboside to the subject. The heart failure may be associated with iron deficiency. The method may also include administering iron to the subject.
    Type: Application
    Filed: February 10, 2016
    Publication date: February 7, 2019
    Inventors: Nancy C. Andrews, Wenjing Xu, Anthony A. Sauve