Patents by Inventor Wenjuan Zhu
Wenjuan Zhu has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 8724402Abstract: Embodiments relate to a method for representing data in a graphene-based memory device. The method includes applying a first voltage to a back gate of a graphene-based memory device and a second voltage to a first graphene layer of the graphene-based memory device. The graphene-based memory device includes the first graphene layer and a second graphene layer and a first insulation layer located between the first and second graphene layers. The first insulation layer has an opening between the first and second graphene layers. The back gate is located on an opposite side of the second graphene layer from the first insulation layer. The first graphene layer is configured to bend into the opening of the first insulation layer to contact the second graphene layer based on a first electrostatic force generated by the applying the first voltage to the back gate.Type: GrantFiled: August 27, 2012Date of Patent: May 13, 2014Assignee: International Business Machines CorporationInventor: Wenjuan Zhu
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Patent number: 8680511Abstract: A silicon nitride layer is provided on an uppermost surface of a graphene layer and then a hafnium dioxide layer is provided on an uppermost surface of the silicon nitride layer. The silicon nitride layer acts as a wetting agent for the hafnium dioxide layer and thus prevents the formation of discontinuous columns of hafnium dioxide atop the graphene layer. The silicon nitride layer and the hafnium dioxide layer, which collectively form a low EOT bilayer gate dielectric, exhibit continuous morphology atop the graphene layer.Type: GrantFiled: February 9, 2012Date of Patent: March 25, 2014Assignee: International Business Machines CorporationInventors: Christos D. Dimitrakopoulos, Damon B. Farmer, Alfred Grill, Yu-Ming Lin, Deborah A. Neumayer, Dirk Pfeiffer, Wenjuan Zhu
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Publication number: 20140050036Abstract: Embodiments relate to a method for representing data in a graphene-based memory device. The method includes applying a first voltage to a back gate of a graphene-based memory device and a second voltage to a first graphene layer of the graphene-based memory device. The graphene-based memory device includes the first graphene layer and a second graphene layer and a first insulation layer located between the first and second graphene layers. The first insulation layer has an opening between the first and second graphene layers. The back gate is located on an opposite side of the second graphene layer from the first insulation layer. The first graphene layer is configured to bend into the opening of the first insulation layer to contact the second graphene layer based on a first electrostatic force generated by the applying the first voltage to the back gate.Type: ApplicationFiled: August 27, 2012Publication date: February 20, 2014Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATIONInventor: Wenjuan Zhu
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Publication number: 20140038365Abstract: A method of forming a semiconductor device includes forming a field-effect transistor (FET), and forming a fuse which includes a graphene layer and is electrically connected to the FET.Type: ApplicationFiled: July 31, 2012Publication date: February 6, 2014Applicant: International Business Machines CorporationInventor: Wenjuan Zhu
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Patent number: 8598634Abstract: A semiconductor device includes a field-effect transistor (FET), and a fuse which includes a graphene layer and is electrically connected to the FET.Type: GrantFiled: September 14, 2012Date of Patent: December 3, 2013Assignee: International Businsess Machines CorporationInventor: Wenjuan Zhu
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Patent number: 8569089Abstract: Semiconductor nano-devices, such as nano-probe and nano-knife devices, which are constructed using graphene films that are suspended between open cavities of a semiconductor structure. The suspended graphene films serve as electro-mechanical membranes that can be made very thin, from one or few atoms in thickness, to greatly improve the sensitivity and reliability of semiconductor nano-probe and nano-knife devices.Type: GrantFiled: August 31, 2012Date of Patent: October 29, 2013Assignee: International Business Machines CorporationInventor: Wenjuan Zhu
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Patent number: 8564027Abstract: Semiconductor nano-devices, such as nano-probe and nano-knife devices, which are constructed using graphene films that are suspended between open cavities of a semiconductor structure. The suspended graphene films serve as electro-mechanical membranes that can be made very thin, from one or few atoms in thickness, to greatly improve the sensitivity and reliability of semiconductor nano-probe and nano-knife devices.Type: GrantFiled: January 27, 2012Date of Patent: October 22, 2013Assignee: International Business Machines CorporationInventor: Wenjuan Zhu
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Publication number: 20130270511Abstract: Semiconductor nano pressure sensor devices having graphene membrane suspended over cavities formed in a semiconductor substrate. A suspended graphene membrane serves as an active electro-mechanical membrane for sensing pressure, which can be made very thin, from about one atomic layer to about 10 atomic layers in thickness, to improve the sensitivity and reliability of a semiconductor pressure sensor device.Type: ApplicationFiled: April 12, 2012Publication date: October 17, 2013Applicant: International Business Machines CorporationInventors: Jin Cai, Yanqing Wu, Wenjuan Zhu
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GRAPHENE TRANSISTOR GATED BY CHARGES THROUGH A NANOPORE FOR BIO-MOLECULAR SENSING AND DNA SEQUENCING
Publication number: 20130271150Abstract: A technique for a nanodevice is provided. A reservoir is separated into two parts by a membrane. A nanopore is formed through the membrane, and the nanopore connects the two parts of the reservoir. The nanopore and the two parts of the reservoir are filled with ionic buffer. The membrane includes a graphene layer and insulating layers. The graphene layer is wired to first and second metal pads to form a graphene transistor in which transistor current flowing through the graphene transistor is modulated by charges or dipoles passing through the nanopore.Type: ApplicationFiled: May 22, 2012Publication date: October 17, 2013Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATIONInventors: Hongbo Peng, Gustavo A. Stolovitzky, Wenjuan Zhu -
GRAPHENE TRANSISTOR GATED BY CHARGES THROUGH A NANOPORE FOR BIO-MOLECULAR SENSING AND DNA SEQUENCING
Publication number: 20130270521Abstract: A technique for a nanodevice is provided. A reservoir is separated into two parts by a membrane. A nanopore is formed through the membrane, and the nanopore connects the two parts of the reservoir. The nanopore and the two parts of the reservoir are filled with ionic buffer. The membrane includes a graphene layer and insulating layers. The graphene layer is wired to first and second metal pads to form a graphene transistor in which transistor current flowing through the graphene transistor is modulated by charges passing through the nanopore.Type: ApplicationFiled: April 17, 2012Publication date: October 17, 2013Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATIONInventors: Hongbo Peng, Gustavo A. Stolovitzky, Wenjuan Zhu -
Publication number: 20130273682Abstract: Semiconductor nano pressure sensor devices having graphene membrane suspended over open cavities formed in a semiconductor substrate. A suspended graphene membrane serves as an active electro-mechanical membrane for sensing pressure, which can be made very thin, from about one atomic layer to about 10 atomic layers in thickness, to improve the sensitivity and reliability of a semiconductor pressure sensor device.Type: ApplicationFiled: August 31, 2012Publication date: October 17, 2013Applicant: International Business Machines CorporationInventors: Jin Cai, Yanqing Wu, Wenjuan Zhu
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Patent number: 8557686Abstract: Embodiments relate to a method of forming a graphene-based memory device. The method includes forming a forming a first graphene layer on an first insulator layer, and forming a second insulation layer on the first graphene layer. The method further includes forming a second graphene layer on the second insulation layer and forming an opening in the second insulation layer to expose a portion of the first graphene layer and a portion of the second graphene layer and to suspend the exposed portion of the second graphene layer in the opening.Type: GrantFiled: August 27, 2012Date of Patent: October 15, 2013Assignee: International Business Machines CorporationInventor: Wenjuan Zhu
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Patent number: 8530886Abstract: A semiconductor structure which includes a substrate; a graphene layer on the substrate; a source electrode and a drain electrode on the graphene layer, the source electrode and drain electrode being spaced apart by a predetermined dimension; a nitride layer on the graphene layer between the source electrode and drain electrode; and a gate electrode on the nitride layer, wherein the nitride layer is a gate dielectric for the gate electrode.Type: GrantFiled: March 18, 2011Date of Patent: September 10, 2013Assignee: International Business Machines CorporationInventors: Phaedon Avouris, Deborah A. Neumayer, Wenjuan Zhu
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Patent number: 8519450Abstract: Embodiments relate to a graphene-based memory device. The graphene-based memory device includes a first graphene layer and a second graphene layer. A first insulation layer is located between the first and second graphene layers. The first insulation layer has an opening between the first and second graphene layers, and the first graphene layer is configured to bend into the opening to contact the second graphene layer based on a first electrostatic force.Type: GrantFiled: August 17, 2012Date of Patent: August 27, 2013Assignee: International Business Machines CorporationInventor: Wenjuan Zhu
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Publication number: 20130207080Abstract: A silicon nitride layer is provided on an uppermost surface of a graphene layer and then a hafnium dioxide layer is provided on an uppermost surface of the silicon nitride layer. The silicon nitride layer acts as a wetting agent for the hafnium dioxide layer and thus prevents the formation of discontinuous columns of hafnium dioxide atop the graphene layer. The silicon nitride layer and the hafnium dioxide layer, which collectively form a low EOT bilayer gate dielectric, exhibit continuous morphology atop the graphene layer.Type: ApplicationFiled: February 9, 2012Publication date: August 15, 2013Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATIONInventors: Christos D. Dimitrakopoulos, Damon B. Farmer, Alfred Grill, Yu-Ming Lin, Deborah A. Neumayer, Dirk Pfeiffer, Wenjuan Zhu
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Publication number: 20130196463Abstract: Semiconductor nano-devices, such as nano-probe and nano-knife devices, which are constructed using graphene films that are suspended between open cavities of a semiconductor structure. The suspended graphene films serve as electro-mechanical membranes that can be made very thin, from one or few atoms in thickness, to greatly improve the sensitivity and reliability of semiconductor nano-probe and nano-knife devices.Type: ApplicationFiled: August 31, 2012Publication date: August 1, 2013Applicant: International Business Machines CorporationInventor: Wenjuan Zhu
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Publication number: 20130193410Abstract: Semiconductor nano-devices, such as nano-probe and nano-knife devices, which are constructed using graphene films that are suspended between open cavities of a semiconductor structure. The suspended graphene films serve as electro-mechanical membranes that can be made very thin, from one or few atoms in thickness, to greatly improve the sensitivity and reliability of semiconductor nano-probe and nano-knife devices.Type: ApplicationFiled: January 27, 2012Publication date: August 1, 2013Applicant: International Business Machines CorporationInventor: Wenjuan Zhu
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Publication number: 20120235118Abstract: A semiconductor structure which includes a substrate; a graphene layer on the substrate; a source electrode and a drain electrode on the graphene layer, the source electrode and drain electrode being spaced apart by a predetermined dimension; a nitride layer on the graphene layer between the source electrode and drain electrode; and a gate electrode on the nitride layer, wherein the nitride layer is a gate dielectric for the gate electrode.Type: ApplicationFiled: March 18, 2011Publication date: September 20, 2012Applicant: International Business Machines CorporationInventors: Phaedon Avouris, Deborah Neumayer, Wenjuan Zhu
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Publication number: 20120181510Abstract: A three-dimensional integrated circuit includes a semiconductor device, an insulator formed on the semiconductor device, an interconnect formed in the insulator, and a graphene device formed on the insulator.Type: ApplicationFiled: January 18, 2012Publication date: July 19, 2012Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATIONInventors: Phaedon Avouris, Yanqing Wu, Wenjuan Zhu
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Patent number: 8101474Abstract: A novel buried-channel graphene device structure and method for manufacture. The new structure includes a two level channel layer comprised of a buried-channel graphene layer with an amorphous silicon top channel layer. The method for making such structure includes the steps of depositing a graphene layer on a substrate, depositing an amorphous silicon layer on the graphene layer, converting the upper layer of the amorphous silicon layer to a gate dielectric by nitridation, oxidation or oxynitridation, while keeping the lower layer of the amorphous silicon layer to serve as part of the channel to form the buried-channel graphene device.Type: GrantFiled: January 6, 2010Date of Patent: January 24, 2012Assignee: International Business Machines CorporationInventor: Wenjuan Zhu